JP6195673B2 - 液体で物体を処理するための方法および装置 - Google Patents

液体で物体を処理するための方法および装置 Download PDF

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JP6195673B2
JP6195673B2 JP2016539041A JP2016539041A JP6195673B2 JP 6195673 B2 JP6195673 B2 JP 6195673B2 JP 2016539041 A JP2016539041 A JP 2016539041A JP 2016539041 A JP2016539041 A JP 2016539041A JP 6195673 B2 JP6195673 B2 JP 6195673B2
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temperature
application device
sensor
liquid
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JP2017500742A5 (enExample
JP2017500742A (ja
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ホーフアー−モーサー，イエルク
リンダー，マヌエル
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４テツクス・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/02—Thermometers specially adapted for specific purposes for measuring temperature of moving fluids or granular materials capable of flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/02—Thermometers specially adapted for specific purposes for measuring temperature of moving fluids or granular materials capable of flow
    • G01K13/026—Thermometers specially adapted for specific purposes for measuring temperature of moving fluids or granular materials capable of flow of moving liquids

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2016539041A 2013-12-09 2014-11-26 液体で物体を処理するための方法および装置 Active JP6195673B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATA946/2013 2013-12-09
ATA946/2013A AT515147B1 (de) 2013-12-09 2013-12-09 Verfahren und Vorrichtung zum Behandeln von Gegenständen mit einer Flüssigkeit
PCT/AT2014/000209 WO2015085334A1 (de) 2013-12-09 2014-11-26 Verfahren und vorrichtung zum behandeln von gegenständen mit einer flüssigkeit

Publications (3)

Publication Number Publication Date
JP2017500742A JP2017500742A (ja) 2017-01-05
JP2017500742A5 JP2017500742A5 (enExample) 2017-02-16
JP6195673B2 true JP6195673B2 (ja) 2017-09-13

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JP2016539041A Active JP6195673B2 (ja) 2013-12-09 2014-11-26 液体で物体を処理するための方法および装置

Country Status (5)

Country Link
US (1) US20160307770A1 (enExample)
EP (1) EP3080837B1 (enExample)
JP (1) JP6195673B2 (enExample)
AT (1) AT515147B1 (enExample)
WO (1) WO2015085334A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11581187B2 (en) * 2018-12-20 2023-02-14 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of heating SOC film on wafer by electromagnetic wave generator and heating apparatus using the same
WO2021061836A1 (en) * 2019-09-23 2021-04-01 Baldwin Technology Company, Inc. System and method of sensing and processing multivariate printing process data
AT16977U3 (de) 2020-02-20 2021-03-15 4Tex Gmbh Verfahren zum Behandeln von Substraten mit Chemikalien
CN113878403B (zh) * 2021-10-13 2024-10-29 洛阳开远智能精机有限公司 一种在线工件检测系统及工件检测方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3707979A (en) * 1969-02-28 1973-01-02 Honeywell Inc Cooled temperature sensitive oscillator
US5478435A (en) * 1994-12-16 1995-12-26 National Semiconductor Corp. Point of use slurry dispensing system
TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JPH11283950A (ja) * 1998-03-30 1999-10-15 Ebara Corp 基板洗浄装置
KR100265286B1 (ko) * 1998-04-20 2000-10-02 윤종용 반도체장치 제조용 케미컬 순환공급장치 및 이의 구동방법
US5965813A (en) * 1998-07-23 1999-10-12 Industry Technology Research Institute Integrated flow sensor
JP2000265945A (ja) * 1998-11-10 2000-09-26 Uct Kk 薬液供給ポンプ、薬液供給装置、薬液供給システム、基板洗浄装置、薬液供給方法、及び基板洗浄方法
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US6376013B1 (en) * 1999-10-06 2002-04-23 Advanced Micro Devices, Inc. Multiple nozzles for dispensing resist
KR20010039993A (ko) * 1999-10-06 2001-05-15 오카무라 가네오 유량 및 유속 측정장치
DE60120339T2 (de) * 2001-01-05 2007-06-06 NGK Spark Plug Co., Ltd., Nagoya Gasdurchflussmessvorrichtung
WO2002089532A1 (en) * 2001-04-26 2002-11-07 Phifer Smith Corporation A method and apparatus for heating a gas-solvent solution
US20080044939A1 (en) * 2002-01-24 2008-02-21 Nassiopoulou Androula G Low power silicon thermal sensors and microfluidic devices based on the use of porous sealed air cavity technology or microchannel technology
US7300598B2 (en) * 2003-03-31 2007-11-27 Tokyo Electron Limited Substrate processing method and apparatus
KR100708037B1 (ko) * 2003-12-24 2007-04-16 마츠시타 덴끼 산교 가부시키가이샤 유체공급노즐, 기판처리장치 및 기판처리방법
TW200618108A (en) * 2004-09-07 2006-06-01 Phifer Smith Corp Copper processing using an ozone-solvent solution
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Also Published As

Publication number Publication date
EP3080837B1 (de) 2025-06-11
WO2015085334A1 (de) 2015-06-18
US20160307770A1 (en) 2016-10-20
JP2017500742A (ja) 2017-01-05
EP3080837A1 (de) 2016-10-19
AT515147B1 (de) 2016-10-15
AT515147A1 (de) 2015-06-15

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