JP6192379B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP6192379B2
JP6192379B2 JP2013127887A JP2013127887A JP6192379B2 JP 6192379 B2 JP6192379 B2 JP 6192379B2 JP 2013127887 A JP2013127887 A JP 2013127887A JP 2013127887 A JP2013127887 A JP 2013127887A JP 6192379 B2 JP6192379 B2 JP 6192379B2
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JP
Japan
Prior art keywords
layer
solid
state imaging
imaging device
color filter
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Expired - Fee Related
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JP2013127887A
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English (en)
Japanese (ja)
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JP2015002340A5 (enExample
JP2015002340A (ja
Inventor
真梨子 古田
真梨子 古田
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013127887A priority Critical patent/JP6192379B2/ja
Priority to US14/293,273 priority patent/US9263485B2/en
Publication of JP2015002340A publication Critical patent/JP2015002340A/ja
Publication of JP2015002340A5 publication Critical patent/JP2015002340A5/ja
Application granted granted Critical
Publication of JP6192379B2 publication Critical patent/JP6192379B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2013127887A 2013-06-18 2013-06-18 固体撮像装置 Expired - Fee Related JP6192379B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013127887A JP6192379B2 (ja) 2013-06-18 2013-06-18 固体撮像装置
US14/293,273 US9263485B2 (en) 2013-06-18 2014-06-02 Solid-state imaging apparatus and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013127887A JP6192379B2 (ja) 2013-06-18 2013-06-18 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2015002340A JP2015002340A (ja) 2015-01-05
JP2015002340A5 JP2015002340A5 (enExample) 2016-06-16
JP6192379B2 true JP6192379B2 (ja) 2017-09-06

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JP2013127887A Expired - Fee Related JP6192379B2 (ja) 2013-06-18 2013-06-18 固体撮像装置

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US (1) US9263485B2 (enExample)
JP (1) JP6192379B2 (enExample)

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JP6545016B2 (ja) * 2015-06-25 2019-07-17 三重富士通セミコンダクター株式会社 固体撮像装置および遮光方法
KR102661391B1 (ko) 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
US11217615B2 (en) * 2017-01-30 2022-01-04 Sony Semiconductor Solutions Corporation Imaging element, fabrication method, and electronic equipment
JP2018166159A (ja) 2017-03-28 2018-10-25 キヤノン株式会社 デバイスおよび電子機器、輸送機器
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108257999A (zh) * 2018-01-24 2018-07-06 德淮半导体有限公司 图像传感器及形成图像传感器的方法
KR102498582B1 (ko) * 2018-02-26 2023-02-14 에스케이하이닉스 주식회사 파티션 패턴들을 가진 이미지 센서
CN108417595A (zh) * 2018-03-21 2018-08-17 德淮半导体有限公司 图像传感器及其形成方法
CN108538872A (zh) * 2018-03-29 2018-09-14 德淮半导体有限公司 图像传感器及其形成方法
CN108682679B (zh) * 2018-06-01 2020-07-14 德淮半导体有限公司 半导体装置及其制造方法
KR102611172B1 (ko) 2019-08-20 2023-12-08 에스케이하이닉스 주식회사 이미지 센서
KR102696964B1 (ko) * 2019-08-26 2024-08-21 에스케이하이닉스 주식회사 이미지 센서
KR102747501B1 (ko) 2019-10-02 2024-12-31 에스케이하이닉스 주식회사 이미지 센서
KR102793152B1 (ko) * 2019-10-17 2025-04-08 에스케이하이닉스 주식회사 이미지 센서
DE112020006539T5 (de) * 2020-01-16 2023-01-12 Sony Semiconductor Solutions Corporation Festkörperbildgebungsvorrichtung
KR102861173B1 (ko) 2020-05-25 2025-09-17 에스케이하이닉스 주식회사 이미지 센싱 장치
KR102771722B1 (ko) 2020-06-19 2025-02-24 에스케이하이닉스 주식회사 이미지 센싱 장치
JPWO2022196169A1 (enExample) * 2021-03-16 2022-09-22
US20240186341A1 (en) * 2021-04-30 2024-06-06 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
KR20220170391A (ko) * 2021-06-22 2022-12-30 삼성전자주식회사 이미지 센서
KR20230020857A (ko) * 2021-08-04 2023-02-13 에스케이하이닉스 주식회사 이미지 센싱 장치
TW202333488A (zh) * 2022-02-03 2023-08-16 日商索尼半導體解決方案公司 固態攝像元件及電子機器
WO2023243237A1 (ja) * 2022-06-15 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2025084019A1 (ja) * 2023-10-19 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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US7851837B2 (en) * 2003-12-18 2010-12-14 Panasonic Corporation Light-collecting device and solid-state imaging apparatus
JP4598680B2 (ja) * 2005-01-18 2010-12-15 パナソニック株式会社 固体撮像装置及びカメラ
US7265328B2 (en) * 2005-08-22 2007-09-04 Micron Technology, Inc. Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor
JP2008010544A (ja) 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子
JP2008192771A (ja) * 2007-02-02 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
KR100872990B1 (ko) * 2007-03-19 2008-12-08 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조 방법
JP5371339B2 (ja) 2008-09-11 2013-12-18 富士フイルム株式会社 固体撮像素子及び撮像装置
JP2010192705A (ja) * 2009-02-18 2010-09-02 Sony Corp 固体撮像装置、電子機器、および、その製造方法
US8269264B2 (en) * 2009-11-09 2012-09-18 Omnivision Technologies, Inc. Image sensor having waveguides formed in color filters
JP2013149758A (ja) 2012-01-18 2013-08-01 Canon Inc 固体撮像装置およびその製造方法ならびにカメラ
US8941204B2 (en) * 2012-04-27 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for reducing cross talk in image sensors
KR102083402B1 (ko) * 2013-02-25 2020-03-02 삼성전자주식회사 이미지 센서 및 이의 형성 방법
JP6278608B2 (ja) * 2013-04-08 2018-02-14 キヤノン株式会社 半導体装置およびその製造方法

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Publication number Publication date
US9263485B2 (en) 2016-02-16
US20140367817A1 (en) 2014-12-18
JP2015002340A (ja) 2015-01-05

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