JP6189164B2 - 成長装置 - Google Patents

成長装置 Download PDF

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Publication number
JP6189164B2
JP6189164B2 JP2013205081A JP2013205081A JP6189164B2 JP 6189164 B2 JP6189164 B2 JP 6189164B2 JP 2013205081 A JP2013205081 A JP 2013205081A JP 2013205081 A JP2013205081 A JP 2013205081A JP 6189164 B2 JP6189164 B2 JP 6189164B2
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Japan
Prior art keywords
susceptor
temperature
wafer pocket
heat
wafer
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JP2013205081A
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Japanese (ja)
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JP2015070198A (ja
JP2015070198A5 (enrdf_load_stackoverflow
Inventor
内田　徹
徹 内田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2013205081A priority Critical patent/JP6189164B2/ja
Publication of JP2015070198A publication Critical patent/JP2015070198A/ja
Publication of JP2015070198A5 publication Critical patent/JP2015070198A5/ja
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  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2013205081A 2013-09-30 2013-09-30 成長装置 Active JP6189164B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013205081A JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013205081A JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

Publications (3)

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JP2015070198A JP2015070198A (ja) 2015-04-13
JP2015070198A5 JP2015070198A5 (enrdf_load_stackoverflow) 2016-11-17
JP6189164B2 true JP6189164B2 (ja) 2017-08-30

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JP2013205081A Active JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

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JP (1) JP6189164B2 (enrdf_load_stackoverflow)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001010894A (ja) * 1999-06-24 2001-01-16 Mitsubishi Materials Silicon Corp 結晶成長用サセプタとこれを用いた結晶成長装置、およびエピタキシャル・ウェーハとその製造方法
JP4592849B2 (ja) * 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
JP4678386B2 (ja) * 2007-06-15 2011-04-27 住友電気工業株式会社 気相成長装置および気相成長方法
JP2009275254A (ja) * 2008-05-14 2009-11-26 Taiyo Nippon Sanso Corp 気相成長装置
JP2009275255A (ja) * 2008-05-14 2009-11-26 Taiyo Nippon Sanso Corp 気相成長装置
JP5697246B2 (ja) * 2011-04-13 2015-04-08 イビデン株式会社 エピタキシャル成長用サセプタ、これを用いたエピタキシャル成長装置およびこれを用いたエピタキシャル成長方法
JP2013138164A (ja) * 2011-12-01 2013-07-11 Stanley Electric Co Ltd 半導体製造装置

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JP2015070198A (ja) 2015-04-13

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