JP6188635B2 - 熱電変換材料および熱電変換素子 - Google Patents
熱電変換材料および熱電変換素子 Download PDFInfo
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- JP6188635B2 JP6188635B2 JP2014109929A JP2014109929A JP6188635B2 JP 6188635 B2 JP6188635 B2 JP 6188635B2 JP 2014109929 A JP2014109929 A JP 2014109929A JP 2014109929 A JP2014109929 A JP 2014109929A JP 6188635 B2 JP6188635 B2 JP 6188635B2
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- 239000000463 material Substances 0.000 title claims description 274
- 238000006243 chemical reaction Methods 0.000 title claims description 145
- 229910017028 MnSi Inorganic materials 0.000 claims description 54
- 239000006185 dispersion Substances 0.000 claims description 48
- 239000002245 particle Substances 0.000 claims description 14
- 239000002585 base Substances 0.000 description 73
- 239000004065 semiconductor Substances 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 29
- 150000003377 silicon compounds Chemical class 0.000 description 25
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000000969 carrier Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 10
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 9
- 238000006467 substitution reaction Methods 0.000 description 9
- 229910005329 FeSi 2 Inorganic materials 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002114 nanocomposite Substances 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 229910016066 BaSi Inorganic materials 0.000 description 6
- 229910019974 CrSi Inorganic materials 0.000 description 6
- 229910016006 MoSi Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000002648 laminated material Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 238000010587 phase diagram Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229910016317 BiTe Inorganic materials 0.000 description 4
- 229910018989 CoSb Inorganic materials 0.000 description 4
- 229910002665 PbTe Inorganic materials 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000002440 industrial waste Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 101001109993 Artemia salina 60S acidic ribosomal protein P2 Proteins 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Silicon Compounds (AREA)
Description
<熱電変換材料について>
熱電変換材料は、熱電変換素子に用いられる材料である。熱電変換素子は、ゼーベック効果を利用し、温度差を起電力に変換(熱電変換)する素子である。ゼーベック効果とは、異なる金属や半導体間に温度差を設けると電圧が発生する現象をいう。このような、熱電変換素子に用いられ、温度差よって起電力を生じる材料を「熱電変換材料」という。
ZT=S2T/(ρκ) ・・・(1)
式(1)中の、Sはゼーベック係数を、Tは絶対温度を、ρは比抵抗を、κは熱伝導率を表わしている。
次いで、本発明者らが検討した実施例について説明する。母材料として、MnSia(1.7<a<1.75)を用い、分散材料としてMnSiまたはSiを用いたナノコンポジット構造の熱電変換材料を作成し、検討した。
本実施の形態においては、実施の形態1で説明した熱電変換材料を用いた熱電変換素子について説明する。
実施の形態1においては、半導体シリコン化合物よりなる母材料中に、Siを分散材料として分散させた構造(ナノコンポジット構造)を有する熱電変換材料を用いたが、母材料よりなる層と分散材料に対応する層を交互に積層した積層構造を有する熱電変換材料を用いてもよい。
実施の形態1においては、半導体シリコン化合物よりなる母材料として、シリサイドを用いたが、母材料として他の半導体シリコン化合物を用いてもよい。
11 母材料層
20 分散材料
21 積層材料層
EL 電極
EL11 電極
EL12 電極
EL22 電極
M 熱電変換材料
NM n型の熱電変換材料
NM1 n型の熱電変換材料
NM2 n型の熱電変換材料
PM p型の熱電変換材料
PM1 p型の熱電変換材料
PM2 p型の熱電変換材料
SP 微粒子
Claims (3)
- 母材料であるMnSi a (1.7<a<1.75)と、
前記母材料中に分散する分散材料であるSiからなる粒子と、を有し、
前記分散材料の量が、0より大きく2.05−a以下である、熱電変換材料。 - 熱電変換材料と電極部とを有する熱電変換素子であって、
前記熱電変換材料は、
母材料であるMnSi a (1.7<a<1.75)と、
前記母材料中に分散する分散材料であるSiからなる粒子と、を有し、
前記分散材料の量が、0より大きく2.05−a以下である、熱電変換素子。 - 請求項2記載の熱電変換素子において、
前記熱電変換材料と前記電極部との構成が、π型またはユニレグ型の構成である、熱電変換素子。
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JP6473068B2 (ja) * | 2015-10-29 | 2019-02-20 | 住友電気工業株式会社 | 熱電変換材料および熱電変換素子 |
JP2017216388A (ja) * | 2016-06-01 | 2017-12-07 | 住友電気工業株式会社 | 熱電材料、熱電素子、光センサおよび熱電材料の製造方法 |
US20180026170A1 (en) | 2016-07-25 | 2018-01-25 | Tohoku University | Thermoelectric material and method for producing thermoelectric material |
JP6802057B2 (ja) * | 2016-12-22 | 2020-12-16 | 住友電気工業株式会社 | 熱電変換材料積層体および熱電変換素子 |
JP6951097B2 (ja) * | 2017-03-29 | 2021-10-20 | 株式会社日立製作所 | 熱電変換素子及び熱電変換モジュール |
JP6892786B2 (ja) | 2017-05-10 | 2021-06-23 | 株式会社日立製作所 | 熱電変換材料及び熱電変換モジュール |
JP2019029630A (ja) * | 2017-07-28 | 2019-02-21 | 章道 中條 | 熱エネルギーを電気エネルギーに変換して発電する熱電変換システムである。 |
CN109309155B (zh) * | 2017-07-28 | 2022-04-19 | 丰田自动车株式会社 | 高锰硅基碲化物热电复合材料及其制备方法 |
JP7242999B2 (ja) * | 2018-03-16 | 2023-03-22 | 三菱マテリアル株式会社 | 熱電変換素子 |
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JP2002285274A (ja) * | 2001-03-27 | 2002-10-03 | Daido Steel Co Ltd | Mg−Si系熱電材料及びその製造方法 |
KR101418076B1 (ko) * | 2009-06-30 | 2014-07-10 | 도쿄 유니버시티 오브 사이언스 에듀케이셔널 파운데이션 애드미니스트레이티브 오거니제이션 | 마그네슘-규소 복합재료 및 그 제조방법, 그리고 이 복합재료를 이용한 열전변환 재료, 열전변환 소자, 및 열전변환 모듈 |
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JP5387613B2 (ja) * | 2010-09-03 | 2014-01-15 | 株式会社豊田中央研究所 | 遷移金属シリサイド−Si複合粉末及びその製造方法、並びに、遷移金属シリサイド−Si複合粉末製造用CaSiy系粉末及びその製造方法 |
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