JP6187083B2 - 第１３族金属窒化物結晶 - Google Patents
第１３族金属窒化物結晶 Download PDFInfo
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- JP6187083B2 JP6187083B2 JP2013195715A JP2013195715A JP6187083B2 JP 6187083 B2 JP6187083 B2 JP 6187083B2 JP 2013195715 A JP2013195715 A JP 2013195715A JP 2013195715 A JP2013195715 A JP 2013195715A JP 6187083 B2 JP6187083 B2 JP 6187083B2
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- 239000013078 crystal Substances 0.000 title claims description 365
- 150000004767 nitrides Chemical class 0.000 title description 95
- 229910021482 group 13 metal Inorganic materials 0.000 title description 64
- 238000000034 method Methods 0.000 description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 57
- 229910002601 GaN Inorganic materials 0.000 description 51
- 238000006243 chemical reaction Methods 0.000 description 50
- 239000002994 raw material Substances 0.000 description 39
- 238000004519 manufacturing process Methods 0.000 description 33
- 239000002904 solvent Substances 0.000 description 33
- -1 ammonia is not high Chemical compound 0.000 description 30
- 239000000758 substrate Substances 0.000 description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 239000002775 capsule Substances 0.000 description 18
- 238000011049 filling Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 10
- 150000002367 halogens Chemical class 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000009036 growth inhibition Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910000039 hydrogen halide Inorganic materials 0.000 description 3
- 239000012433 hydrogen halide Substances 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910002835 Pt–Ir Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- OEERIBPGRSLGEK-UHFFFAOYSA-N carbon dioxide;methanol Chemical compound OC.O=C=O OEERIBPGRSLGEK-UHFFFAOYSA-N 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195715A JP6187083B2 (ja) | 2013-06-06 | 2013-09-20 | 第１３族金属窒化物結晶 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013119857 | 2013-06-06 | ||
| JP2013119857 | 2013-06-06 | ||
| JP2013195715A JP6187083B2 (ja) | 2013-06-06 | 2013-09-20 | 第１３族金属窒化物結晶 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015013790A JP2015013790A (ja) | 2015-01-22 |
| JP2015013790A5 JP2015013790A5 (enExample) | 2016-06-09 |
| JP6187083B2 true JP6187083B2 (ja) | 2017-08-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013195715A Active JP6187083B2 (ja) | 2013-06-06 | 2013-09-20 | 第１３族金属窒化物結晶 |
| JP2013195716A Pending JP2015013791A (ja) | 2013-06-06 | 2013-09-20 | 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013195716A Pending JP2015013791A (ja) | 2013-06-06 | 2013-09-20 | 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶 |
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| Country | Link |
|---|---|
| JP (2) | JP6187083B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108779580B (zh) | 2016-03-15 | 2021-11-16 | 三菱化学株式会社 | GaN结晶的制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4551203B2 (ja) * | 2004-12-08 | 2010-09-22 | 株式会社リコー | Ｉｉｉ族窒化物の結晶製造方法 |
| WO2008143166A1 (ja) * | 2007-05-17 | 2008-11-27 | Mitsubishi Chemical Corporation | Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス |
| JP4530004B2 (ja) * | 2007-07-18 | 2010-08-25 | 住友電気工業株式会社 | ＧａＮ結晶の成長方法 |
| JP5045292B2 (ja) * | 2007-07-27 | 2012-10-10 | 三菱化学株式会社 | 窒化物半導体基板の製造方法 |
| JP5774476B2 (ja) * | 2008-05-28 | 2015-09-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 六方晶系ウルツ鉱単結晶 |
| WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| JP5821164B2 (ja) * | 2010-04-27 | 2015-11-24 | 住友電気工業株式会社 | ＧａＮ基板および発光デバイス |
-
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- 2013-09-20 JP JP2013195715A patent/JP6187083B2/ja active Active
- 2013-09-20 JP JP2013195716A patent/JP2015013791A/ja active Pending
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| Publication number | Publication date |
|---|---|
| JP2015013790A (ja) | 2015-01-22 |
| JP2015013791A (ja) | 2015-01-22 |
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