JP6182916B2 - 発光装置の封止部材の取り外し方法 - Google Patents

発光装置の封止部材の取り外し方法 Download PDF

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Publication number
JP6182916B2
JP6182916B2 JP2013053451A JP2013053451A JP6182916B2 JP 6182916 B2 JP6182916 B2 JP 6182916B2 JP 2013053451 A JP2013053451 A JP 2013053451A JP 2013053451 A JP2013053451 A JP 2013053451A JP 6182916 B2 JP6182916 B2 JP 6182916B2
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Japan
Prior art keywords
sealing member
substrate
light emitting
emitting element
emitting device
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JP2013053451A
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English (en)
Japanese (ja)
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JP2014179520A (ja
JP2014179520A5 (enExample
Inventor
新吾 大村
新吾 大村
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Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2013053451A priority Critical patent/JP6182916B2/ja
Priority to US14/211,400 priority patent/US9472715B2/en
Publication of JP2014179520A publication Critical patent/JP2014179520A/ja
Publication of JP2014179520A5 publication Critical patent/JP2014179520A5/ja
Priority to US15/270,874 priority patent/US9755121B2/en
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Publication of JP6182916B2 publication Critical patent/JP6182916B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

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JP2013053451A 2013-03-15 2013-03-15 発光装置の封止部材の取り外し方法 Active JP6182916B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013053451A JP6182916B2 (ja) 2013-03-15 2013-03-15 発光装置の封止部材の取り外し方法
US14/211,400 US9472715B2 (en) 2013-03-15 2014-03-14 Method of detaching sealing member of light emitting device
US15/270,874 US9755121B2 (en) 2013-03-15 2016-09-20 Method of detaching sealing member of light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013053451A JP6182916B2 (ja) 2013-03-15 2013-03-15 発光装置の封止部材の取り外し方法

Publications (3)

Publication Number Publication Date
JP2014179520A JP2014179520A (ja) 2014-09-25
JP2014179520A5 JP2014179520A5 (enExample) 2016-04-21
JP6182916B2 true JP6182916B2 (ja) 2017-08-23

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Family Applications (1)

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JP2013053451A Active JP6182916B2 (ja) 2013-03-15 2013-03-15 発光装置の封止部材の取り外し方法

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US (2) US9472715B2 (enExample)
JP (1) JP6182916B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI610411B (zh) * 2014-08-14 2018-01-01 艾馬克科技公司 用於半導體晶粒互連的雷射輔助接合
WO2016035629A1 (ja) * 2014-09-03 2016-03-10 株式会社村田製作所 モジュール部品
WO2016104609A1 (ja) * 2014-12-25 2016-06-30 大日本印刷株式会社 Ｌｅｄ素子用基板、ｌｅｄ実装モジュール、及び、それらを用いたｌｅｄ表示装置
JP2016122815A (ja) * 2014-12-25 2016-07-07 大日本印刷株式会社 Ｌｅｄ素子用基板
JP6432343B2 (ja) 2014-12-26 2018-12-05 日亜化学工業株式会社 発光装置の製造方法
US10199545B2 (en) * 2015-09-30 2019-02-05 Dai Nippon Printing Co., Ltd. Substrate for light emitting element and module
CN111886708A (zh) * 2018-03-27 2020-11-03 索尼半导体解决方案公司 元件组件、以及元件和安装基板组件
JP7052708B2 (ja) * 2018-12-21 2022-04-12 豊田合成株式会社 封止部材の取り外し方法、発光素子の取り外し方法、及び取り外し用治具
JP7113390B2 (ja) * 2018-12-21 2022-08-05 豊田合成株式会社 発光装置の製造方法

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US5371328A (en) * 1993-08-20 1994-12-06 International Business Machines Corporation Component rework
JPH09289227A (ja) * 1996-04-19 1997-11-04 Citizen Watch Co Ltd 半導体の実装構造
EP0977251B1 (en) * 1997-02-10 2011-11-16 Panasonic Corporation Resin sealed semiconductor device and method for manufacturing the same
JPH118338A (ja) * 1997-06-17 1999-01-12 Nichia Chem Ind Ltd 表面実装型ｌｅｄの取り外し方法、取り外し装置及び発光装置のリペア方法
US5953210A (en) * 1997-07-08 1999-09-14 Hughes Electronics Corporation Reworkable circuit board assembly including a reworkable flip chip
US6396712B1 (en) * 1998-02-12 2002-05-28 Rose Research, L.L.C. Method and apparatus for coupling circuit components
JP3753629B2 (ja) * 2001-06-11 2006-03-08 シャープ株式会社 発光装置
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP2004349274A (ja) 2003-03-27 2004-12-09 Kyocera Corp 発光素子搭載用基板および発光装置
JP5128047B2 (ja) * 2004-10-07 2013-01-23 Ｔｏｗａ株式会社 光デバイス及び光デバイスの生産方法
JP2007157940A (ja) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
CN101443922B (zh) * 2006-05-18 2011-01-12 旭硝子株式会社 发光装置的制造方法及发光装置
JP5250949B2 (ja) 2006-08-07 2013-07-31 デクセリアルズ株式会社 発光素子モジュール
JP2008277325A (ja) * 2007-04-25 2008-11-13 Canon Inc 半導体装置及び半導体装置の製造方法
JP2009177117A (ja) * 2007-12-25 2009-08-06 Toshiba Lighting & Technology Corp 表示装置
US8115218B2 (en) * 2008-03-12 2012-02-14 Industrial Technology Research Institute Light emitting diode package structure and method for fabricating the same
JP2009302505A (ja) * 2008-05-15 2009-12-24 Panasonic Corp 半導体装置、および半導体装置の製造方法
JP5327042B2 (ja) * 2009-03-26 2013-10-30 豊田合成株式会社 Ｌｅｄランプの製造方法
JP2011204397A (ja) 2010-03-24 2011-10-13 Sony Corp 照明装置
US8698005B2 (en) * 2010-06-15 2014-04-15 Panasonic Corporation Package structure, method for manufacturing same, and method for repairing package structure
US10147853B2 (en) * 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
CN102694102B (zh) * 2011-03-22 2014-11-05 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法、以及光源装置

Also Published As

Publication number Publication date
JP2014179520A (ja) 2014-09-25
US9472715B2 (en) 2016-10-18
US9755121B2 (en) 2017-09-05
US20140273289A1 (en) 2014-09-18
US20170012184A1 (en) 2017-01-12

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