JP6179937B2 - プラズマエッチング装置及びプラズマエッチング方法 - Google Patents

プラズマエッチング装置及びプラズマエッチング方法 Download PDF

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JP6179937B2
JP6179937B2 JP2013104017A JP2013104017A JP6179937B2 JP 6179937 B2 JP6179937 B2 JP 6179937B2 JP 2013104017 A JP2013104017 A JP 2013104017A JP 2013104017 A JP2013104017 A JP 2013104017A JP 6179937 B2 JP6179937 B2 JP 6179937B2
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gas
etching
semiconductor layer
plasma
substrate
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JP2014225561A (ja
JP2014225561A5 (enExample
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浩通 扇谷
浩通 扇谷
敦紀 丸野
敦紀 丸野
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Samco Inc
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JP2013104017A 2013-05-16 2013-05-16 プラズマエッチング装置及びプラズマエッチング方法 Active JP6179937B2 (ja)

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JP2014225561A5 JP2014225561A5 (enExample) 2016-03-17
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Publication number Priority date Publication date Assignee Title
JP7170422B2 (ja) * 2018-05-15 2022-11-14 東京エレクトロン株式会社 処理装置
CN114242583B (zh) * 2021-12-22 2023-03-21 江苏第三代半导体研究院有限公司 AlGaN材料的刻蚀方法及其应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599250B2 (ja) * 1994-06-30 1997-04-09 日亜化学工業株式会社 窒化ガリウム系化合物半導体のドライエッチング方法
JP4037154B2 (ja) * 2002-04-15 2008-01-23 松下電器産業株式会社 プラズマ処理方法
JP2010003915A (ja) * 2008-06-20 2010-01-07 Mitsubishi Electric Corp エッチング装置及び半導体装置の製造方法
WO2010111854A1 (zh) * 2009-03-31 2010-10-07 西安电子科技大学 紫外发光二极管器件及其制造方法
JP5503391B2 (ja) * 2010-04-19 2014-05-28 シャープ株式会社 窒化物系半導体レーザ素子の製造方法

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