JP2014225561A5 - - Google Patents
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- Publication number
- JP2014225561A5 JP2014225561A5 JP2013104017A JP2013104017A JP2014225561A5 JP 2014225561 A5 JP2014225561 A5 JP 2014225561A5 JP 2013104017 A JP2013104017 A JP 2013104017A JP 2013104017 A JP2013104017 A JP 2013104017A JP 2014225561 A5 JP2014225561 A5 JP 2014225561A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor layer
- plasma etching
- substrate
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims 4
- 238000012544 monitoring process Methods 0.000 claims 3
- 230000002123 temporal effect Effects 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 238000007781 pre-processing Methods 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013104017A JP6179937B2 (ja) | 2013-05-16 | 2013-05-16 | プラズマエッチング装置及びプラズマエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013104017A JP6179937B2 (ja) | 2013-05-16 | 2013-05-16 | プラズマエッチング装置及びプラズマエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014225561A JP2014225561A (ja) | 2014-12-04 |
| JP2014225561A5 true JP2014225561A5 (enExample) | 2016-03-17 |
| JP6179937B2 JP6179937B2 (ja) | 2017-08-16 |
Family
ID=52124034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013104017A Active JP6179937B2 (ja) | 2013-05-16 | 2013-05-16 | プラズマエッチング装置及びプラズマエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6179937B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7170422B2 (ja) * | 2018-05-15 | 2022-11-14 | 東京エレクトロン株式会社 | 処理装置 |
| CN114242583B (zh) * | 2021-12-22 | 2023-03-21 | 江苏第三代半导体研究院有限公司 | AlGaN材料的刻蚀方法及其应用 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2599250B2 (ja) * | 1994-06-30 | 1997-04-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体のドライエッチング方法 |
| JP4037154B2 (ja) * | 2002-04-15 | 2008-01-23 | 松下電器産業株式会社 | プラズマ処理方法 |
| JP2010003915A (ja) * | 2008-06-20 | 2010-01-07 | Mitsubishi Electric Corp | エッチング装置及び半導体装置の製造方法 |
| WO2010111854A1 (zh) * | 2009-03-31 | 2010-10-07 | 西安电子科技大学 | 紫外发光二极管器件及其制造方法 |
| JP5503391B2 (ja) * | 2010-04-19 | 2014-05-28 | シャープ株式会社 | 窒化物系半導体レーザ素子の製造方法 |
-
2013
- 2013-05-16 JP JP2013104017A patent/JP6179937B2/ja active Active
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