JP6176523B2 - 薄膜式ガスセンサ及びその製造方法 - Google Patents
薄膜式ガスセンサ及びその製造方法 Download PDFInfo
- Publication number
- JP6176523B2 JP6176523B2 JP2013116822A JP2013116822A JP6176523B2 JP 6176523 B2 JP6176523 B2 JP 6176523B2 JP 2013116822 A JP2013116822 A JP 2013116822A JP 2013116822 A JP2013116822 A JP 2013116822A JP 6176523 B2 JP6176523 B2 JP 6176523B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas
- thin film
- catalyst
- sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000003054 catalyst Substances 0.000 claims description 49
- 238000002485 combustion reaction Methods 0.000 claims description 25
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 187
- 239000007789 gas Substances 0.000 description 95
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 42
- 239000000758 substrate Substances 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
本発明の実施例について説明する。本実施例においては、本発明の実施形態に係る薄膜式ガスセンサのセンサ素子1を用いるが、センサ素子1の触媒層6dにおいては、Ptの原子数N1とSnの原子数N2との比であるPt/Sn原子組成比R(=N1/N2)が0.16、0.25、及び0.34となっている。詳細には、Pt/Sn原子組成比Rを0.16とした4個の薄膜式ガスセンサ(以下、「サンプル1」という)が用いられ、Pt/Sn原子組成比Rを0.25とした4個の薄膜式ガスセンサ(以下、「サンプル2」という)が用いられ、Pt/Sn原子組成比Rを0.34とした4個の薄膜式ガスセンサ(以下、「サンプル3」という)が用いられる。
5 電気絶縁層
6 ガス検知層
6c 感知層
6d 触媒層
6e 選択燃焼層
S 変動比
S0 許容変動比
R Pt/Sn原子組成比
R0 Pt/Sn許容原子組成比
A 実線
Claims (2)
- 電気絶縁層上に配置され、検知対象ガスとの接触により電気的特性が変化し、かつSnO2から成る感知層と、
該感知層上に積層され、かつPtをドープしたSnO2から成る1つの触媒層と、
前記感知層及び前記1つの触媒層を覆うように前記電気絶縁層上に配置され、かつ触媒を添加した多孔質体から構成される選択燃焼層と
を備え、
前記1つの触媒層では、厚さが20nm以上かつ160nm以下となっており、かつPtの原子数(N1)とSnの原子数(N2)との比であるPt/Sn原子組成比(N1/N2)が0.22以上となっている、薄膜式ガスセンサ。 - 検知対象ガスを検知するための薄膜式ガスセンサの製造方法であって、
前記検知対象ガスとの接触により電気的特性が変化し、かつSnO2から成る感知層を、電気絶縁層上に形成するステップと、
PtをドープしたSnO2から成る1つの触媒層を、厚さを20nm以上かつ160nm以下とし、かつPtの原子数(N1)とSnの原子数(N2)との比であるPt/Sn原子組成比(N1/N2)を0.22以上とする条件にて前記感知層上に形成するステップと、
触媒を添加した多孔質体から構成される選択燃焼層を、前記感知層及び前記1つの触媒層を覆うように前記電気絶縁層上に形成するステップと
を含む薄膜式ガスセンサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013116822A JP6176523B2 (ja) | 2013-06-03 | 2013-06-03 | 薄膜式ガスセンサ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013116822A JP6176523B2 (ja) | 2013-06-03 | 2013-06-03 | 薄膜式ガスセンサ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014235083A JP2014235083A (ja) | 2014-12-15 |
JP6176523B2 true JP6176523B2 (ja) | 2017-08-09 |
Family
ID=52137904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013116822A Active JP6176523B2 (ja) | 2013-06-03 | 2013-06-03 | 薄膜式ガスセンサ及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6176523B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4779076B2 (ja) * | 2003-10-30 | 2011-09-21 | 富士電機株式会社 | 薄膜ガスセンサ |
JP4022822B2 (ja) * | 2003-10-30 | 2007-12-19 | 富士電機機器制御株式会社 | 薄膜ガスセンサ |
JP4376093B2 (ja) * | 2003-11-12 | 2009-12-02 | 富士電機機器制御株式会社 | 薄膜ガスセンサ |
JP5312174B2 (ja) * | 2008-04-25 | 2013-10-09 | 富士電機株式会社 | ガスセンサ及びガス検出器 |
US20110138882A1 (en) * | 2009-12-11 | 2011-06-16 | Electronics And Telecommunications Research Institute | Semiconductor gas sensor having low power consumption |
-
2013
- 2013-06-03 JP JP2013116822A patent/JP6176523B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014235083A (ja) | 2014-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5961016B2 (ja) | ガス検知装置 | |
JP6168919B2 (ja) | ガス検知装置及びガス検知方法 | |
WO2012105639A1 (ja) | ガス検知装置およびガス検知方法 | |
JP4355300B2 (ja) | 水素透過膜、水素センサおよび水素の検知方法 | |
JP4487206B2 (ja) | ガス警報器 | |
JP2013061227A (ja) | ガス検知装置 | |
JP2008232784A (ja) | 薄膜ガスセンサおよびその製造方法 | |
JP6372686B2 (ja) | ガス検出装置およびガス検出方法 | |
JP4022822B2 (ja) | 薄膜ガスセンサ | |
JP2009282024A (ja) | ガスセンサ及びガス検出器 | |
JP4830714B2 (ja) | 薄膜ガスセンサの異常検知方法 | |
JP4376093B2 (ja) | 薄膜ガスセンサ | |
JP6397072B2 (ja) | 薄膜式ガスセンサの検査方法 | |
JP6176523B2 (ja) | 薄膜式ガスセンサ及びその製造方法 | |
JP2010185774A (ja) | 薄膜ガスセンサ | |
JP6284300B2 (ja) | 薄膜式ガスセンサ | |
JP2007017217A (ja) | 薄膜ガスセンサ | |
JP2011027752A (ja) | 薄膜ガスセンサ | |
JP2013174627A (ja) | ガスセンサ | |
JP2014178198A (ja) | ガス検知装置 | |
JP4851610B2 (ja) | 薄膜ガスセンサ | |
JP5278086B2 (ja) | 薄膜ガスセンサおよびその製造方法 | |
JP4315992B2 (ja) | ガスセンサ及びガス検出器及びガス検出方法 | |
JP5212286B2 (ja) | 薄膜ガスセンサおよび薄膜ガスセンサの製造方法 | |
JP3976265B2 (ja) | 薄膜ガスセンサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170317 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170512 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170616 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170629 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6176523 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |