JP6166257B2 - Euvリソグラフィ用の反射光学素子及び光学系 - Google Patents
Euvリソグラフィ用の反射光学素子及び光学系 Download PDFInfo
- Publication number
- JP6166257B2 JP6166257B2 JP2014510773A JP2014510773A JP6166257B2 JP 6166257 B2 JP6166257 B2 JP 6166257B2 JP 2014510773 A JP2014510773 A JP 2014510773A JP 2014510773 A JP2014510773 A JP 2014510773A JP 6166257 B2 JP6166257 B2 JP 6166257B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- reflective optical
- layer
- protective layer
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 57
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 124
- 239000011241 protective layer Substances 0.000 claims description 54
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- 239000011733 molybdenum Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 229910039444 MoC Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 description 33
- 229910052739 hydrogen Inorganic materials 0.000 description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 29
- 238000002310 reflectometry Methods 0.000 description 28
- 230000005855 radiation Effects 0.000 description 25
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 23
- 229910052707 ruthenium Inorganic materials 0.000 description 23
- 239000002245 particle Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 239000006096 absorbing agent Substances 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910052580 B4C Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 150000004681 metal hydrides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silane compound Chemical class 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Nanotechnology (AREA)
- Atmospheric Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Microscoopes, Condenser (AREA)
Description
Claims (7)
- 多層系を備えた反射面を有する極紫外線及び軟X線波長領域用の反射光学素子であって、前記反射面(60)の上に、炭化ケイ素から構成される最上層(56)を備えた保護層系(59)を配置し、該保護層系(59)は、5nm〜25nmの厚さを有し、
前記保護層系は、前記最上層(56)の下に、モリブデン及び炭化ケイ素から構成される少なくとも2つの交互に配置した層(57、58)をさらに有する反射光学素子。 - 請求項1に記載の反射光学素子において、前記保護層系(59)は、11nm〜22nmの厚さを有する反射光学素子。
- 請求項1または2に記載の反射光学素子において、前記多層系(51)は、極紫外線及び軟X線波長領域の屈折率の実部が小さな材料の層と、極紫外線及び軟X線波長領域の屈折率の実部の大きな材料の層とを交互に配置した層(54、55)を有し、前記屈折率の実部の大きな材料はケイ素である反射光学素子。
- 請求項3に記載の反射光学素子において、前記屈折率の実部の小さな材料はモリブデンである反射光学素子。
- 請求項1から4の何れか1項に記載の反射光学素子において、前記保護層系は、前記最上層の下に、モリブデン及び炭化ケイ素から構成される4つの交互に配置した層(57、58)を備える反射光学素子。
- 請求項1〜5のいずれか1項に記載の反射光学素子において、該反射光学素子をコレクタミラー(13)として設計した反射光学素子。
- 請求項1〜6のいずれか1項に記載の少なくとも1つの反射光学素子を有するEUVリソグラフィ用の光学系。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161487402P | 2011-05-18 | 2011-05-18 | |
US61/487,402 | 2011-05-18 | ||
DE102011076011A DE102011076011A1 (de) | 2011-05-18 | 2011-05-18 | Reflektives optisches Element und optisches System für die EUV-Lithographie |
DE102011076011.3 | 2011-05-18 | ||
PCT/EP2012/058997 WO2012156394A1 (en) | 2011-05-18 | 2012-05-15 | Reflective optical element and optical system for euv lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014519196A JP2014519196A (ja) | 2014-08-07 |
JP6166257B2 true JP6166257B2 (ja) | 2017-07-19 |
Family
ID=47087936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014510773A Active JP6166257B2 (ja) | 2011-05-18 | 2012-05-15 | Euvリソグラフィ用の反射光学素子及び光学系 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9996005B2 (ja) |
EP (1) | EP2710415B1 (ja) |
JP (1) | JP6166257B2 (ja) |
KR (1) | KR101905223B1 (ja) |
CN (1) | CN103547945B (ja) |
DE (1) | DE102011076011A1 (ja) |
WO (1) | WO2012156394A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012202850A1 (de) * | 2012-02-24 | 2013-08-29 | Asml Netherlands B.V. | Verfahren zum Optimieren eines Schutzlagensystems für ein optisches Element, optisches Element und optisches System für die EUV-Lithographie |
DE102012222466A1 (de) * | 2012-12-06 | 2014-06-12 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102013102670A1 (de) | 2013-03-15 | 2014-10-02 | Asml Netherlands B.V. | Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements |
EP2905637A1 (en) * | 2014-02-07 | 2015-08-12 | ASML Netherlands B.V. | EUV optical element having blister-resistant multilayer cap |
DE102014216240A1 (de) * | 2014-08-15 | 2016-02-18 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
DE102014223811B4 (de) * | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils |
US9607833B2 (en) | 2015-01-30 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for photomask particle detection |
DE102015207140A1 (de) * | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102016213831A1 (de) | 2016-07-27 | 2018-02-01 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102016223206A1 (de) | 2016-11-23 | 2017-01-12 | Carl Zeiss Smt Gmbh | Verfahren zur aufarbeitung reflektiver optischer elemente für ultraviolette strahlung oder weiche röntgenstrahlung |
US11272606B2 (en) * | 2017-06-27 | 2022-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV light source and apparatus for lithography |
DE102017213181A1 (de) | 2017-07-31 | 2019-01-31 | Carl Zeiss Smt Gmbh | Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas |
DE102017213172A1 (de) | 2017-07-31 | 2017-09-14 | Carl Zeiss Smt Gmbh | Verfahren zum Aufbringen einer Deckschicht und reflektives optisches Element |
DE102018211980A1 (de) | 2018-07-18 | 2019-09-05 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
DE102021202483A1 (de) * | 2021-03-15 | 2022-09-15 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektiven optischen Elements für den extrem ultravioletten Wellenlängenbereich sowie reflektives optisches Element |
US20230288807A1 (en) * | 2022-03-11 | 2023-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
JP2001110709A (ja) * | 1999-10-08 | 2001-04-20 | Nikon Corp | 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。 |
US7261957B2 (en) * | 2000-03-31 | 2007-08-28 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
DE10016008A1 (de) * | 2000-03-31 | 2001-10-11 | Zeiss Carl | Villagensystem und dessen Herstellung |
WO2002059905A2 (de) * | 2001-01-26 | 2002-08-01 | Carl Zeiss Smt Ag | Schmalbandiger spektralfilter und seine verwendung |
US20030008148A1 (en) * | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
US6756163B2 (en) * | 2002-06-27 | 2004-06-29 | Intel Corporation | Re-usable extreme ultraviolet lithography multilayer mask blank |
CN100495210C (zh) * | 2002-08-28 | 2009-06-03 | Asml荷兰有限公司 | 光刻设备和器件制造方法 |
DE10258709A1 (de) | 2002-12-12 | 2004-07-01 | Carl Zeiss Smt Ag | Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung |
EP1675164B2 (en) * | 2003-10-15 | 2019-07-03 | Nikon Corporation | Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system |
JP2006170916A (ja) * | 2004-12-17 | 2006-06-29 | Nikon Corp | 光学素子及びこれを用いた投影露光装置 |
US7547505B2 (en) * | 2005-01-20 | 2009-06-16 | Infineon Technologies Ag | Methods of forming capping layers on reflective materials |
US20060237303A1 (en) * | 2005-03-31 | 2006-10-26 | Hoya Corporation | Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask |
US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
US7599112B2 (en) | 2005-10-11 | 2009-10-06 | Nikon Corporation | Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same |
JP2007140105A (ja) * | 2005-11-18 | 2007-06-07 | Nikon Corp | 多層膜反射鏡及び露光装置 |
EP2015923B1 (en) * | 2006-05-09 | 2013-02-27 | Carl Zeiss Vision Australia Holdings Ltd. | Methods for forming coated high index optical elements |
JP2010506224A (ja) | 2006-10-13 | 2010-02-25 | メディア ラリオ ソシエタ ア レスポンサビリタ リミタータ | コーティングされたミラー及びその製造 |
US7875863B2 (en) | 2006-12-22 | 2011-01-25 | Asml Netherlands B.V. | Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method |
TWI427334B (zh) | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
JP2008288299A (ja) * | 2007-05-16 | 2008-11-27 | Nikon Corp | 多層膜反射鏡、照明装置、露光装置、及びデバイス製造方法 |
WO2008148516A2 (en) * | 2007-06-06 | 2008-12-11 | Carl Zeiss Smt Ag | Reflective optical element and method for operating an euv lithography device |
KR101333032B1 (ko) | 2007-06-12 | 2013-11-26 | 코닌클리케 필립스 엔.브이. | 감소된 반사율을 향상시키기 위하여 euv 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법 |
NL1036305A1 (nl) * | 2007-12-21 | 2009-06-23 | Asml Netherlands Bv | Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system. |
JP5335269B2 (ja) * | 2008-04-07 | 2013-11-06 | ギガフォトン株式会社 | 極端紫外光源装置 |
DE102009045170A1 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und Verfahren zum Betrieb einer EUV-Lithographievorrichtung |
-
2011
- 2011-05-18 DE DE102011076011A patent/DE102011076011A1/de not_active Ceased
-
2012
- 2012-05-15 WO PCT/EP2012/058997 patent/WO2012156394A1/en active Application Filing
- 2012-05-15 EP EP12720522.7A patent/EP2710415B1/en active Active
- 2012-05-15 JP JP2014510773A patent/JP6166257B2/ja active Active
- 2012-05-15 KR KR1020137033157A patent/KR101905223B1/ko active IP Right Grant
- 2012-05-15 CN CN201280024078.6A patent/CN103547945B/zh active Active
-
2013
- 2013-11-18 US US14/082,865 patent/US9996005B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2710415B1 (en) | 2018-07-04 |
EP2710415A1 (en) | 2014-03-26 |
CN103547945B (zh) | 2017-08-29 |
WO2012156394A1 (en) | 2012-11-22 |
KR20140045399A (ko) | 2014-04-16 |
JP2014519196A (ja) | 2014-08-07 |
KR101905223B1 (ko) | 2018-10-05 |
US20140199543A1 (en) | 2014-07-17 |
DE102011076011A1 (de) | 2012-11-22 |
CN103547945A (zh) | 2014-01-29 |
US9996005B2 (en) | 2018-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6166257B2 (ja) | Euvリソグラフィ用の反射光学素子及び光学系 | |
JP5349697B2 (ja) | 反射光学素子及びeuvリソグラフィ装置を作動させる方法 | |
JP6382856B2 (ja) | Euvリソグラフィー用の光学素子及び光学系、及びこの光学系を処理する方法 | |
US8501373B2 (en) | Passivation of multi-layer mirror for extreme ultraviolet lithography | |
TWI490633B (zh) | 極紫外線光罩的形成方法 | |
JP5511818B2 (ja) | リソグラフィ装置用の光学素子、かかる光学素子を含むリソグラフィ装置、およびかかる光学素子を製造する方法 | |
US9773578B2 (en) | Radiation source-collector and method for manufacture | |
JP5752786B2 (ja) | 多層ミラー及びそのロバスト性を改善する方法 | |
JP2018116301A (ja) | 光学素子 | |
JP5717765B2 (ja) | スペクトル純度フィルタ | |
US20220179329A1 (en) | Optical element and euv lithographic system | |
US9229331B2 (en) | EUV mirror comprising an oxynitride capping layer having a stable composition, EUV lithography apparatus, and operating method | |
JP2006170811A (ja) | 多層膜反射鏡、euv露光装置、及び軟x線光学機器 | |
TWI697739B (zh) | 反射鏡、特別是用於微影投影曝光裝置的反射鏡 | |
JP2003227898A (ja) | 多層膜反射鏡、軟x線光学機器、露光装置及びその清掃方法 | |
JP4352977B2 (ja) | 多層膜反射鏡及びeuv露光装置 | |
US20230076667A1 (en) | Optical element, euv lithography system, and method for forming nanoparticles | |
TW202331404A (zh) | 用於積體電路的圖案化之極紫外線(euv)光罩架構 | |
JP2006170812A (ja) | 多層膜反射鏡、euv露光装置、及び軟x線光学機器 | |
NL2011761A (en) | Radiation source-collector and method for manufacture. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150511 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160303 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160315 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170404 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170606 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170622 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6166257 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |