JP6164722B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6164722B2
JP6164722B2 JP2012273958A JP2012273958A JP6164722B2 JP 6164722 B2 JP6164722 B2 JP 6164722B2 JP 2012273958 A JP2012273958 A JP 2012273958A JP 2012273958 A JP2012273958 A JP 2012273958A JP 6164722 B2 JP6164722 B2 JP 6164722B2
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor chip
output terminal
output
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012273958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014120582A5 (https=
JP2014120582A (ja
Inventor
真吾 井上
真吾 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2012273958A priority Critical patent/JP6164722B2/ja
Publication of JP2014120582A publication Critical patent/JP2014120582A/ja
Publication of JP2014120582A5 publication Critical patent/JP2014120582A5/ja
Application granted granted Critical
Publication of JP6164722B2 publication Critical patent/JP6164722B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2012273958A 2012-12-14 2012-12-14 半導体装置 Active JP6164722B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012273958A JP6164722B2 (ja) 2012-12-14 2012-12-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012273958A JP6164722B2 (ja) 2012-12-14 2012-12-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2014120582A JP2014120582A (ja) 2014-06-30
JP2014120582A5 JP2014120582A5 (https=) 2016-02-04
JP6164722B2 true JP6164722B2 (ja) 2017-07-19

Family

ID=51175184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012273958A Active JP6164722B2 (ja) 2012-12-14 2012-12-14 半導体装置

Country Status (1)

Country Link
JP (1) JP6164722B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6569417B2 (ja) * 2015-09-16 2019-09-04 三菱電機株式会社 増幅器
JP2019102908A (ja) 2017-11-30 2019-06-24 ソニーセミコンダクタソリューションズ株式会社 高周波増幅器、電子機器および通信機器
CN111788680B (zh) * 2018-01-18 2024-12-06 维尔塞特公司 模块化功率放大器设备和架构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124745A (ja) * 1982-12-30 1984-07-18 Fujitsu Ltd 半導体装置
JPS6173352A (ja) * 1984-09-18 1986-04-15 Toshiba Corp マイクロ波fet増幅器
JPH01296702A (ja) * 1988-05-25 1989-11-30 Hitachi Ltd 半導体パッケージ
JP2589344B2 (ja) * 1988-06-10 1997-03-12 山形日本電気株式会社 高周波半導体装置
JP3728393B2 (ja) * 2000-02-16 2005-12-21 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP2014120582A (ja) 2014-06-30

Similar Documents

Publication Publication Date Title
CN108206677B (zh) 用于具有增强视频带宽的rf功率放大器的多基带终端组件
US7706756B2 (en) RF power module
CN108233881B (zh) 放大器电路和经封装的放大器电路
JP6316512B1 (ja) 半導体装置
CN111279469B (zh) 具有偏置带的rf放大器封装
CN109643976B (zh) 具有高功率密度的封装射频功率放大器
CN110034736B (zh) 封装式射频功率放大器
CN110581690B (zh) 具有短截线电路的放大器和放大器模块
CN107644852B (zh) 用于rf功率放大器封装件的集成无源器件
KR102906245B1 (ko) 입력 기저대역 강화 회로를 구현하는 무선 주파수 증폭기 및 이를 구현하는 방법
JP6337473B2 (ja) 集積回路及び送受信装置
US10332847B2 (en) Semiconductor package with integrated harmonic termination feature
JP6164722B2 (ja) 半導体装置
JP6164721B2 (ja) 半導体装置
JP5513991B2 (ja) 高周波モジュールおよびその動作方法
JP2016006870A (ja) 半導体装置
US11979117B2 (en) High frequency semiconductor amplifier
JP2006278832A (ja) 半導体装置および電子装置
US10707818B1 (en) RF amplifier with impedance matching components monolithically integrated in transistor die
JP2013153097A (ja) 広帯域増幅器
JP2010021961A (ja) 増幅器
JP2011250360A (ja) 高周波モジュール
JP2017046297A (ja) 高周波低雑音増幅器
JP2021125713A (ja) 高周波半導体装置
JP2020010386A (ja) 高周波低雑音増幅器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161012

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170523

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170616

R150 Certificate of patent or registration of utility model

Ref document number: 6164722

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250