CN109643976B - 具有高功率密度的封装射频功率放大器 - Google Patents

具有高功率密度的封装射频功率放大器 Download PDF

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CN109643976B
CN109643976B CN201780052046.XA CN201780052046A CN109643976B CN 109643976 B CN109643976 B CN 109643976B CN 201780052046 A CN201780052046 A CN 201780052046A CN 109643976 B CN109643976 B CN 109643976B
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frequency power
capacitor
inductor
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CN109643976A (zh
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约翰内斯·A·M·德波特
诸毅
尤里·沃洛凯恩
维特里奥·库柯
阿尔贝图斯·G·W·P·范佐耶伦
约尔丹·康斯坦丁诺夫·斯蒂什塔洛夫
约瑟夫斯·H·B·范德赞登
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Abstract

本发明涉及一种封装射频功率放大器。本发明还涉及一种包括该封装射频功率放大器的用于移动通信的蜂窝基站。根据本发明的封装RF功率放大器包括被耦接到射频功率晶体管的输出端的输出网络,其中,该输出网络包括在晶体管的输出端和封装的输出引线之间沿第一方向延伸的多个第一键合线、在射频功率晶体管的输出端和地之间串联连接的第二电感器和第一电容器、以及串联连接在地与第二电感器和第一电容器之间的结点之间的第三电感器和第二电容器。根据本发明,第一和第二电容器被集成在单个无源管芯上,并且第三电感器包括串联连接的第一部件和第二部件,其中,第一部件至少部分地沿第一方向延伸,并且第二部件至少部分地沿与第一方向相反的方向延伸。替代地,第三电感器基本上垂直于第一方向延伸。

Description

具有高功率密度的封装射频功率放大器
技术领域
本发明涉及一种封装射频(Radio Frequency,RF)功率放大器。本发明还涉及一种包括该封装RF功率放大器的用于移动通信的蜂窝基站。
背景技术
图1示出了已知的RF功率放大器。图2示出了对应的等效电路图。已知的放大器1包括具有输出引线2、输入引线3和法兰4的封装。布置有RF功率晶体管6的有源管芯5被安装在法兰4上。RF功率晶体管6的输入端(诸如栅极)连接到键合焊垫条7,并且RF功率晶体管6的输出端(诸如漏极)连接到键合焊垫条8。
封装RF功率放大器1还包括第一无源管芯9、第二无源管芯10和第三无源管芯11。在每个管芯上,布置有集成电容器C1、C2、C4,该集成电容器具有两个端子,其中一个端子接地。在本发明的上下文中,接地端子是指电连接到法兰4的端子。另一端子连接到包括键合焊垫条12、13、14的键合焊垫条组件。管芯9、10、11中的每一个以及连接键合线被布置在封装内。
在本发明的上下文中,有源管芯是其上布置有RF功率晶体管的半导体管芯,并且无源管芯是优选地但不一定由半导体材料制成的管芯,该管芯上实现有一个或多个无源元件。
第一电感器L1将RF功率晶体管6的输出端连接到输出引线2。该电感器包括多个第一键合线19,该第一键合线在键合焊垫条8和输出引线2之间沿第一方向延伸。第二电感器L2将RF功率晶体管6的输出端连接到第一电容器C1的非接地端子。该电感器包括多个第二键合线17,该第二键合线在键合焊垫条8和键合焊垫条13之间延伸。第三电感器L3将第一电容器C1的第一端子连接到第二电容器C2的非接地端子。该电感器包括一个或多个第三键合线18,该第三键合线在电连接到键合焊垫条13的键合焊垫条13_1和键合焊垫条14之间延伸。
第五电感器L5将输入引线3连接到第四电容器C4的非接地端子。该电感器包括多个第五键合线15,该第五键合线在输入引线3和电连接到第四电容器C4的非接地端子的键合焊垫条12之间延伸。第六电感器L6将键合焊垫条12连接到RF功率晶体管6的输入端。该电感器包括多个第六键合线16。电感器L5、L6和电容器C4组成输入阻抗匹配网络。
如图1所示,第二电容器C2位于靠近有源管芯5的无源管芯11上,而第一电容器C1和第四电容器C4被分别布置在有源管芯5与输出引线2或输入引线3之间。
现在参考图2,在RF功率晶体管6的输出端处存在寄生输出电容。该电容(由Cds表示)使RF功率晶体管6在工作频率处的性能下降,该工作频率通常介于1至3GHz之间的范围内,但不排除其他频率范围。
图2示出了克服上述问题的已知的解决方案。由L2、L3、C1和C2形成的输出网络被配置成与Cds在工作频率处或接近于工作频率处谐振。更特别地,在工作频率处或接近于工作频率处,输出网络将充当分流电感器。该电感器将与Cds进行并联谐振,使得减轻Cds对工作频率下的RF性能的影响。典型地,分流电感器主要取决于L2。
C2比C1大得多。C2将在相对低的频率处和与偏置网络相关联的电感进行并联谐振。在图2中该电感由L反馈(Lfeed)表示。应注意,本发明不限于在电路中引入偏置电流的特定位置。
C2和Lfeed的并联谐振将引入有效阻抗的在晶体管的漏极处可见的第一峰值。另一谐振发生在基本上与C1和L3的谐振频率对应的更高的频率处。通过适当地选择L2、L3、C1和C3的分量值,能够在通常与二阶互调产物(intermodulation products)相关联的频率范围内实现所需的阻抗特性。在该范围内,由RF频率晶体管6所见的阻抗应尽可能低以避免性能下降。
针对封装RF功率放大器的重要设计参数是能够在给定的封装尺寸内产生的功率。更高的功率密度(以每单位封装面积瓦特数表示)能够实现更紧凑的设计。另一个重要参数是产生功率的效率,诸如功率附加效率(power added efficiency)。高效率表示封装内消耗的功率很小。这对于冷却封装RF功率放大器所需的冷却量和系统的总功率预算具有积极的影响。
EP2388815A1公开了根据权利要求1的前序的封装射频(RF)功率放大器。该文献描述了图1中的电路的替代实施方式。在此,电容器C2被集成在有源半导体管芯上,并且电容器C1被集成在无源半导体管芯上,该无源半导体管芯被布置在封装内,位于有源管芯和输出引线之间。US2007024358A1公开了另一种封装射频(RF)功率放大器。
发明内容
本发明的目的是提供一种比图1中的已知系统更高的功率密度而效率没有降低或几乎没有降低。
上述目的已采用根据权利要求1的封装RF功率放大器实现,其特征在于,第二电容器被集成在无源半导体管芯上,该无源半导体管芯被布置在输出引线和有源管芯之间。第三电感器包括串联连接的第一部分和第二部分,其中,第一部分至少部分地沿第一方向延伸,并且第二部分至少部分地沿与第一方向相反的方向延伸。替代地,第三电感器基本上垂直于第一方向延伸。
申请人发现,尽管第一和第二电容器由于它们在单个无源管芯上的集成而被紧密布置,但是由于如上所描述的第三电感器的布置仍然能够使放大器保持足够的效率。本领域技术人员通常非常不愿意将RF敏感元件(诸如电容器和电感器)在放大器的输出端处布置成靠在一起,因为他预期会产生不需要的耦合效应。申请人通过第三电感器的特定布置克服了这种偏见。更特别地,申请人发现第三电感器的布置限制了由与第一电感器的电磁耦合引起的RF信号经由第二电容器向地面的泄漏。
第三电感器的第一部分和第二部分可以各自整体在无源半导体管芯上或无源半导体管芯上方延伸。替代地,当第三电感器基本上垂直于第一方向延伸时,第三电感器可以整体在无源半导体管芯上或无源半导体管芯上方延伸。在两种情况下,第一电容器可以包括金属-绝缘体-金属电容器,并且第二电容器可以包括深沟槽电容器。
第三电感器可以包括多个第三键合线,其中,第三键合线中的至少一个形成第一部分,并且其它第三键合线形成第二部分。为此,无源管芯可以包括一个或多个辅助键合焊垫,其中,属于第一部分的第三键合线在第一端子和辅助键合焊垫之间延伸,并且属于第二部分的第三键合线在辅助键合焊垫和第三端子之间延伸。辅助键合焊垫能够被布置在第一端子和输出引线之间。
第三键合线能够被布置成平行于一个或多个第一键合线。替代地,属于第一部分的第三键合线能够被布置成相对于一个或多个第一键合线呈第一角度﹢α,并且属于第二部分的第三键合线能够被布置成相对于一个或多个第一键合线呈第二角度﹣β,其中,α和β各自为优选地介于20度至70度之间的范围内的正数。
第一端子可以连接到用于安装一个或多个第二键合线和属于第一部分的第三键合线的第一接合焊垫组件,并且第三端子可以包括用于安装一个或多个属于第二部分的第三键合线的第二键合焊垫组件。第一键合焊垫组件可以被布置在输出焊垫和第二键合焊垫组件之间。第二键合焊垫组件可以被布置在第一键合焊垫组件和一个或多个辅助键合焊垫之间。
当第三电感器基本上垂直于第一方向延伸时,第三电感器可以包括一个或多个第三键合线,其中,第一端子包括第一键合焊垫组件,该第一键合焊垫组件用于安装一个或多个第二键合线和一个或多个第三键合线,并且第三端子包括第二键合焊垫组件,该第二键合焊垫组件用于安装一个或多个第三键合线,其中,第一键合焊垫组件和第二键合焊垫组件沿垂直于第一方向的方向间隔开。通过以这种方式布置第一和第二键合焊垫组件,能够实现第三电感器相对于第一电感器的垂直布置。替代地,第三电感器可以包括被布置在无源管芯上的集成电感器,其中,第三电感器优选地包括传输线和螺旋电感器中的至少一个。
无源管芯可以还包括具有第五端子和接地第六端子的第三电容器。输出网络可以还包括第四电感器,该第四电感器包括连接在第五端子和输出引线之间的一个或多个第四键合线。串联连接的第三电容器和第四电感器能够用作阻抗匹配网络的一部分。
无源管芯可以包括半导体管芯。例如,无源管芯可以包括电阻率在1mOhm cm-100mOhm cm范围内的硅衬底。在这种情况下,能够通过衬底本身实现接地连接。第一电容器可以包括金属-绝缘体-金属电容器,第二电容器可以包括深沟槽电容器,和/或第三电容器包括金属-绝缘体-金属电容器、边缘电容器或键合焊垫。不排除其他类型的电容器。
封装RF功率放大器可以包括多个所述有源管芯和对应的多个所述输出网络,每个输出网络被布置在封装内,其中,每个有源管芯被耦合到相应的输出网络。第一电容器、第二电容器和/或第三电容器以及第一电感器、第二电感器和/或第三导体的分量值可以在输出网络之间变化。
附加地或替代地,有源管芯可以包括多个RF功率晶体管,其中,封装RF功率放大器还包括对应的多个所述输出网络,其中,每个RF功率晶体管被耦接到相应的输出网络。
使用多个有源管芯和/或在单个有源管芯上使用多个RF晶体管使得能够制造Doherty放大器,其中,主放大级和一个或多个峰值放大级被集成在单个封装内。在这种情况下,输出网络可以形成Doherty合成器的一部分,该Doherty合成器用于组合来自主级和峰级的信号。
有源管芯可以是硅管芯,并且RF功率晶体管可以包括横向扩散金属氧化物半导体(LDMOS)晶体管,和/或有源管芯可以包括在衬底生长的氮化镓外延层,并且RF功率晶体管可以包括高电子迁移率晶体管(HEMT),和/或无源管芯可以包括硅管芯。
根据另一方面,本发明还涉及一种蜂窝基站,该蜂窝基站包括如上所描述的封装功率放大器。
附图说明
下面将参考附图更详细地描述本发明,在附图中,相同的参考标记用于表示相同或相似的元件,并且在附图中:
图1示出了已知的封装RF功率放大器;
图2示出了对应于图1的放大器的等效电路图;
图3示出了根据本发明的封装RF功率放大器的实施例;
图4示出了对应于图3的放大器的等效电路图;
图5示出了根据本发明的封装RF功率放大器的另一实施例;
图6示出了对应于图5的放大器的等效电路图;
图7示出了用于图3和图5的放大器的第三导体的替选配置;以及
图8示出了用于图3和图5的放大器的第三导体的另一替选配置。
具体实施方式
图3所示的封装RF功率放大器(其等效电路图在图4中描绘)的实施例与图1中的放大器的不同之处在于:第二电容器C2如第一电容器C1那样被集成在同一单个无源管芯100上。为此,C2的非接地端子电连接到多个键合焊垫14,该多个键合焊垫电连接并且一起形成第二键合焊垫组件。第三电感器L3的第一部分(即L3_1)由在键合焊垫条13和辅助键合焊垫20之间延伸的键合线18_1形成。第三电感器L3的第二部分(即L3_2)由在辅助键合焊垫20和键合焊垫组件14之间延伸的键合线18_2形成。
现在参考图4,电感器L3的第一部分(即L3_1)相对于第一电感器L1具有正的互感系数M,而电感器L3的第二部分(即L3_2)具有负的互感系数。互感的符号可以根据L3的形状和取向和/或根据所使用的符号反转,但是在任何情况下,互感的极性将介于第一部分和第二部分之间。
由于互感M的极性相反,在第一电感器和第三电感器之间存在很少或者几乎不存在互感。申请人发现这种特别的布置能够防止RF性能的下降。不束缚于理论的情况下,规定当结合第一和第二电容器在单个管芯上的集成使用图2的一般电路拓扑时,性能下降的主要原因与第一电感器L1和第三电感器L3之间的电感耦合有关。
图5示出了封装RF功率放大器的另一实施例,该封装RF功率放大器的等效电路图在图6中描绘。该实施例与图3中的实施例的不同之处在于:与图3中的无源管芯100相比,无源管芯200还包括第三电容器C3。该电容器具有接地端子和非接地端子。非接地端子电连接到键合焊垫条21。形成第四电感器L4的多个第四键合线22从键合焊垫条21延伸到输出引线2。串联组合的C3和L4构成封装内匹配网络,该封装内匹配网络被配置成在封装RF放大器的工作频率下提供阻抗匹配。
图7示出了图3和图5的封装RF功率放大器的第三导体的另一替选配置。在第一配置中,第三电感器3的第一部分(即L3_1)由一个或多个键合线180_1形成,该键合线180_1以相对于第一键合线19呈角度﹢α从键合焊垫条13延伸到辅助键合焊垫20。第三电感器3的第二部分(即L3_2)由一个或多个键合线180_2形成,该键合线180_2以相对于第一键合线19呈角度﹣β从辅助键合焊垫20延伸到第二键合焊垫组件14。在实施例中,角度α基本上等于角度β。角度α和β的示例性角度在20度-70度的范围内。
图7示出了第三电感器L3的另一实施例,其中传输线的第一段280_1和第二段280_2用于将键合焊垫条13连接到第二电容器C2的第三端子的连接件14’。尽管在图7中示出了基本上呈直线的传输线,但是本发明不排除其他形状,例如弯曲线。
对于第三电感器L3的每种配置,由于互感系数的符号相反,因而能够识别第一部分和第二部分,互感系数的符号相反产生以上提及的防止RF性能下降的优点。
图8示出了第三电感器L3的又一实施例。在该实施例中,电感器L3使用一个或多个键合线18形成。这些键合线在电连接到键合焊垫13的键合焊垫13_1和与C2的非接地端子相关联的键合焊垫14之间延伸。尽管图8示出了两个键合线18,这两个键合线各自在相应的一对键合焊垫13_1、14之间延伸,但是本发明不限于此。例如,平行布置的多个键合线18可以在一对或多对键合焊垫13_1、14之间延伸。
键合线18垂直于键合线19延伸。因此,L1和L3之间由很少或几乎没有电磁耦合。键合线18可以被配置成在键合线19上方或下方交叉。尽管图8示出了每个键合线18仅与单个键合线19交叉,但是本发明不限于此。例如,每个键合线18可以与多个相邻布置的键合线19交叉。应注意,图8中键合线18的布置能够同样应用于图5中所描绘的实施例。
尽管已经使用本发明的详细实施例描述了本发明,但是本领域技术人员应当理解,在不脱离由所附权利要求及其等效物限定的本发明的范围的情况下,可以修改这些实施例。

Claims (10)

1.一种封装射频功率放大器,所述封装射频功率放大器包括:
封装,所述封装具有输出引线;
有源管芯,所述有源管芯被布置在所述封装内并且在所述有源管芯上布置有射频功率晶体管,所述射频功率晶体管具有输出端和相关联的输出电容;
无源半导体管芯,所述无源半导体管芯被布置在所述输出引线和所述有源管芯之间;以及
输出网络,所述输出网络被布置在所述封装内并且包括:
第一电容器,所述第一电容器具有第一电容并且设置有第一端子和接地第二端子,所述第一电容器被集成在所述无源半导体管芯上;
第二电容器,所述第二电容器具有第二电容并且设置有第三端子和接地第四端子,其中,所述第二电容显著大于所述第一电容;
第一电感器,所述第一电感器包括一个或多个第一键合线,所述一个或多个第一键合线沿第一方向从所述射频功率晶体管的输出端延伸到所述输出引线;
第二电感器,所述第二电感器包括一个或多个第二键合线,所述一个或多个第二键合线从所述射频功率晶体管的输出端延伸到所述第一端子;以及
第三电感器,所述第三电感器连接在所述第一端子和所述第三端子之间;其中,由所述第二电感器、所述第三电感器、所述第一电容器和所述第二电容器形成的网络被配置成在所述封装射频功率放大器的工作频率处或所述封装射频功率放大器的工作频率附近与所述相关联的输出电容谐振;
其特征在于,
所述第二电容器被集成在所述无源半导体管芯上,并且所述第三电感器包括串联连接的第一部分和第二部分,其中,所述第一部分至少部分地沿所述第一方向延伸,并且所述第二部分至少部分地沿与所述第一方向相反的方向延伸;其中,所述第三电感器包括偶数个第三键合线,其中,所述第三键合线中的一半形成所述第一部分并且所述第三键合线中的另一半形成所述第二部分;
其中,所述无源半导体管芯包括一个或多个辅助键合焊垫,其中,属于所述第一部分的一个或多个第三键合线在所述第一端子和所述一个或多个辅助键合焊垫之间延伸,并且属于所述第二部分的一个或多个第三键合线在所述一个或多个辅助键合焊垫和所述第三端子之间延伸;
其中,所述一个或多个辅助键合焊垫被布置在所述第一端子和所述输出引线之间;
其中,所述第一端子包括用于安装所述一个或多个第二键合线和属于所述第一部分的所述一个或多个第三键合线的第一键合焊垫组件,并且所述第三端子包括用于安装属于所述第二部分的所述一个或多个第三键合线的第二键合焊垫组件,其中,所述第一键合焊垫组件被布置在所述射频功率晶体管的输出端和所述第二键合焊垫组件之间,并且所述第二键合焊垫组件被布置在所述第一键合焊垫组件和所述一个或多个辅助键合焊垫之间。
2.根据权利要求1所述的封装射频功率放大器,其中,所述第三电感器的第一部分和第二部分各自整体在所述无源半导体管芯上或所述无源半导体管芯上方延伸。
3.根据权利要求1或2所述的封装射频功率放大器,其中,所述第一电容器包括金属-绝缘体-金属电容器,并且所述第二电容器包括深沟槽电容器。
4.根据权利要求1或2所述的封装射频功率放大器,其中,所述第三键合线被布置成平行于所述一个或多个第一键合线;或
其中,属于所述第一部分的所述一个或多个第三键合线被布置成相对于所述一个或多个第一键合线呈第一角度﹢α,并且属于所述第二部分的所述一个或多个第三键合线被布置成相对于所述一个或多个第一键合线呈第二角度﹣β,其中,α和β各自为正数。
5.根据权利要求1或2所述的封装射频功率放大器,其中,所述无源半导体管芯包括具有第五端子和接地第六端子的第三电容器,所述输出网络进一步包括第四电感器,所述第四电感器包括连接在所述第五端子和所述输出引线之间的一个或多个第四键合线,其中,所述第三电容器包括金属-绝缘体-金属电容器或边缘电容器。
6.根据权利要求1或2所述的封装射频功率放大器,包括多个所述有源管芯和对应的多个所述输出网络,每个所述输出网络被布置在所述封装内,其中,每个有源管芯被耦接到相应的输出网络。
7.根据权利要求1或2所述的封装射频功率放大器,其中,所述有源管芯包括多个射频功率晶体管,所述封装射频功率放大器进一步包括对应的多个所述输出网络,其中,每个射频功率晶体管被耦接到相应的输出网络。
8.根据权利要求1或2所述的封装射频功率放大器,其中,
所述有源管芯是硅管芯,并且所述射频功率晶体管包括横向扩散金属氧化物半导体晶体管;和/或
所述有源管芯包括在衬底生长的氮化镓外延层,并且所述射频功率晶体管包括高电子迁移率晶体管;和/或
所述无源半导体管芯包括硅管芯。
9.根据权利要求4所述的封装射频功率放大器,其中,α和β各自为介于20度至70度之间的范围内的正数。
10.一种蜂窝基站,所述蜂窝基站包括如权利要求1至9中任一项所述的封装射频功率放大器。
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