JP6153188B2 - 二色性フォトダイオード - Google Patents
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- JP6153188B2 JP6153188B2 JP2012199061A JP2012199061A JP6153188B2 JP 6153188 B2 JP6153188 B2 JP 6153188B2 JP 2012199061 A JP2012199061 A JP 2012199061A JP 2012199061 A JP2012199061 A JP 2012199061A JP 6153188 B2 JP6153188 B2 JP 6153188B2
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 68
- 102000010970 Connexin Human genes 0.000 claims description 61
- 108050001175 Connexin Proteins 0.000 claims description 61
- 210000003976 gap junction Anatomy 0.000 claims description 61
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- 239000000758 substrate Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 18
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 11
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 10
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 description 33
- 239000000463 material Substances 0.000 description 15
- 239000006096 absorbing agent Substances 0.000 description 14
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- 238000005286 illumination Methods 0.000 description 2
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- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 108020003175 receptors Proteins 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Description
104 アバランシェフォトダイオード構造
106 負にドープされたヒ化インジウムガリウムコンタクト層
108 n型リン化インジウム層
110 InGaAs/リン化InGaAs吸収層
112 ヒ化リン化インジウムガリウム傾斜層
114 負にドープされたリン化インジウム(n‐InP)電荷層
116 真性InP増倍層
118 第1の正にドープされたリン化インジウムバッファ層
120 第2の正にドープされたリン化インジウムバッファ層
122 リン化インジウム基板
200 二色性フォトダイオード
204 広バンドギャップ接合
206 狭バンドギャップ接合
208 正にドープされたヒ化インジウムガリウム層
210 正にドープされたリン化インジウム層
212 真性リン化インジウム層
214 負にドープされたリン化インジウム層
216 InGaAs/InGaAsP吸収層
218 InGaAsP傾斜層
220 負にドープされたリン化インジウム電荷層
222 真性リン化インジウム増倍層
224 第1の正にドープされたリン化インジウムバッファ層
226 第2の正にドープされたリン化インジウムバッファ層
228 InP基板
300 二色性フォトダイオード
302 背面照明hv
304 広バンドギャップ接合
306 狭バンドギャップ接合
308 キャリア
310 n‐InGaAs層
312 n‐InP層
314 InGaAs/InGaAsP吸収層
316 InGaAsP傾斜層
318 n‐InP電荷層
320 i‐InP増倍層
322 p‐InP層
324 i‐InP層
326 n‐InP層
330 格子整合ホモ接合
400 二色性フォトダイオード
404 広バンドギャップ接合
406 狭バンドギャップ接合
408 n‐InGaAs層
410 n‐InP層
412 InGaAs/InGaAsP吸収層
414 InGaAsP傾斜層
416 n‐InP電荷層
418 i‐InP増倍層
420 p‐InP層
422 i‐InP層
424 n‐InP層
426 透明基板および/またはマイクロレンズ
430 格子整合ホモ接合
500 二色性フォトダイオードアレイシステム
502 二色性フォトダイオード1
504 広バンドギャップ接合
506 狭バンドギャップ接合
508 広バンドギャップ接合
510 狭バンドギャップ接合
512 二色性フォトダイオードN
518 読み出し集積回路
520 プロセッサモジュール
522 メモリモジュール
524 読み出しチャネル
526 通信回線
Claims (14)
- 第1光スペクトルを検出するよう動作可能な格子整合接合を含む広バンドギャップ接合、および、
広バンドギャップ接合に結合されており、かつ、第2光スペクトルを検出するよう動作可能なフォトダイオード構造を含む狭バンドギャップ接合
を含み、
広バンドギャップ接合がP−I−N接合を含み、狭バンドギャップ接合がN−I−P接合を含む、または、広バンドギャップ接合がN−I−P接合を含み、狭バンドギャップ接合がP−I−N接合を含み、
フォトダイオード構造が、ヒ化リン化インジウムガリウム(InGaAsP)傾斜層、負にドープされたリン化インジウム(n‐InP)電荷層、真性リン化インジウム(i‐InP)増倍層および正にドープされた(p型)リン化インジウム(p‐InP)バッファ層を含む二色性フォトダイオード。 - 格子整合接合が、正にドープされた(p型)リン化インジウム層と負にドープされた(n型)リン化インジウム層とに挟まれている真性(i型)リン化インジウム層を含む請求項1に記載の二色性フォトダイオード。
- 格子整合接合が、正にドープされた(p型)層と負にドープされた(n型)層とに挟まれている真性(i型)層を含む請求項1に記載の二色性フォトダイオード。
- 真性(i型)層、正にドープされた(p型)層および負にドープされた(n型)層は、各々が、リン化インジウム、ヒ化インジウムアルミニウム(InAlAs)および水銀カドミウムテルルからなる群から選択される少なくとも1つの要素を含む請求項3に記載の二色性フォトダイオード。
- 狭バンドギャップ接合に結合されている読み出し集積回路をさらに含む請求項1に記載の二色性フォトダイオード。
- 広バンドギャップ接合に結合されている透明基板およびマイクロレンズのうちの少なくとも一方をさらに含む請求項1に記載の二色性フォトダイオード。
- フォトダイオード構造が、ヒ化インジウムガリウム(InGaAs)層およびヒ化リン化インジウムガリウム(InGaAsP)層からなる群から選択される少なくとも1つの要素をさらに含む請求項1に記載の二色性フォトダイオード。
- 第2光スペクトルが、短波長赤外(SWIR)スペクトルを含む請求項1に記載の二色性フォトダイオード。
- 第1光スペクトルが、可視光スペクトルを含む請求項1に記載の二色性フォトダイオード。
- 二色性光検出のための方法であって、
格子整合接合を含む広バンドギャップ接合を用いて第1光スペクトルを検出すること、および、
広バンドギャップ接合と結合された狭バンドギャップ接合を用いて第2光スペクトルを検出することであって、狭バンドギャップ接合がフォトダイオード構造を含む、検出すること
を含み、
広バンドギャップ接合がP−I−N接合を含み、狭バンドギャップ接合がN−I−P接合を含む、または、広バンドギャップ接合がN−I−P接合を含み、狭バンドギャップ接合がP−I−N接合を含み、
フォトダイオード構造が、ヒ化リン化インジウムガリウム(InGaAsP)傾斜層、負にドープされたリン化インジウム(n‐InP)電荷層、真性リン化インジウム(i‐InP)増倍層および正にドープされた(p型)リン化インジウム(p‐InP)バッファ層を含む方法。 - 格子整合接合が、正にドープされた(p型)リン化インジウム層と負にドープされた(n型)リン化インジウム層とに挟まれている真性(i型)リン化インジウム層を含む請求項10に記載の方法。
- 格子整合接合が、正にドープされた(p型)層と負にドープされた(n型)層とに挟まれている真性(i型)層を含む請求項10に記載の方法。
- 真性(i型)層、正にドープされた(p型)層および負にドープされた(n型)層は、各々が、リン化インジウム、ヒ化インジウムアルミニウム(InAlAs)および水銀カドミウムテルルからなる群から選択される少なくとも1つの要素を含む請求項12に記載の方法。
- 広バンドギャップ接合が、正にドープされたヒ化インジウムガリウム(p‐InGaAs)層をさらに含む請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/230,847 | 2011-09-13 | ||
US13/230,847 US8816461B2 (en) | 2011-09-13 | 2011-09-13 | Dichromatic photodiodes |
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JP2013062504A JP2013062504A (ja) | 2013-04-04 |
JP6153188B2 true JP6153188B2 (ja) | 2017-06-28 |
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US (1) | US8816461B2 (ja) |
JP (1) | JP6153188B2 (ja) |
CA (1) | CA2783271C (ja) |
GB (1) | GB2494774B (ja) |
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US7768088B2 (en) * | 2004-09-24 | 2010-08-03 | Fujifilm Corporation | Solid-state imaging device that efficiently guides light to a light-receiving part |
JP2006173330A (ja) * | 2004-12-15 | 2006-06-29 | Seiko Epson Corp | 受光素子およびその製造方法、光モジュール、並びに、光伝達装置 |
JP2006253548A (ja) * | 2005-03-14 | 2006-09-21 | Mitsubishi Electric Corp | 半導体受光素子 |
JP4755854B2 (ja) * | 2005-06-02 | 2011-08-24 | 富士通株式会社 | 半導体受光装置及びその製造方法 |
JP4234116B2 (ja) * | 2005-06-27 | 2009-03-04 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
US7592651B2 (en) * | 2005-12-08 | 2009-09-22 | The Boeing Company | Low dark current photodiode for imaging |
JP2007227835A (ja) * | 2006-02-27 | 2007-09-06 | Seiko Epson Corp | 薄型光素子及びその製造方法、デバイス製造方法、並びに電子機器 |
DE102008006987A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
JP5515278B2 (ja) * | 2008-11-06 | 2014-06-11 | 日本電気株式会社 | 光給電装置 |
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US20130062663A1 (en) | 2013-03-14 |
GB2494774A (en) | 2013-03-20 |
CA2783271A1 (en) | 2013-03-13 |
GB201216408D0 (en) | 2012-10-31 |
JP2013062504A (ja) | 2013-04-04 |
CA2783271C (en) | 2016-09-06 |
US8816461B2 (en) | 2014-08-26 |
GB2494774B (en) | 2015-09-16 |
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