JP6151340B2 - 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 - Google Patents

化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 Download PDF

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JP6151340B2
JP6151340B2 JP2015234383A JP2015234383A JP6151340B2 JP 6151340 B2 JP6151340 B2 JP 6151340B2 JP 2015234383 A JP2015234383 A JP 2015234383A JP 2015234383 A JP2015234383 A JP 2015234383A JP 6151340 B2 JP6151340 B2 JP 6151340B2
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Japan
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slurry
protective layer
layer
cmp
planarization
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Japanese (ja)
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JP2016129221A5 (https=
JP2016129221A (ja
Inventor
スコット ビー． シンジャー，
スコット ビー． シンジャー，
ジョセフ シー． ボワヴェール，
ジョセフ シー． ボワヴェール，
ダニエル シー． ロー，
ダニエル シー． ロー，
クリストファー エム． フェッツァー，
クリストファー エム． フェッツァー，
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Boeing Co
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Boeing Co
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Publication of JP2016129221A5 publication Critical patent/JP2016129221A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/02—Planarisation of semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2015234383A 2014-12-01 2015-12-01 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 Active JP6151340B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/556,337 2014-12-01
US14/556,337 US9431261B2 (en) 2014-12-01 2014-12-01 Removal of defects by in-situ etching during chemical-mechanical polishing processing

Publications (3)

Publication Number Publication Date
JP2016129221A JP2016129221A (ja) 2016-07-14
JP2016129221A5 JP2016129221A5 (https=) 2017-05-18
JP6151340B2 true JP6151340B2 (ja) 2017-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015234383A Active JP6151340B2 (ja) 2014-12-01 2015-12-01 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去

Country Status (4)

Country Link
US (1) US9431261B2 (https=)
EP (2) EP4235751A3 (https=)
JP (1) JP6151340B2 (https=)
TW (1) TWI680508B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121013326A (zh) * 2024-05-22 2025-11-25 长鑫科技集团股份有限公司 半导体结构的制作方法以及半导体结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031163A (ja) 1998-07-13 2000-01-28 Denso Corp 半導体装置及びその製造方法
KR100343136B1 (ko) * 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
US7528075B2 (en) 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
DE102007019565A1 (de) 2007-04-25 2008-09-04 Siltronic Ag Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
WO2013018015A2 (en) 2011-08-01 2013-02-07 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
FR2994615A1 (fr) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Procede de planarisation d'une couche epitaxiee

Also Published As

Publication number Publication date
EP4235751A2 (en) 2023-08-30
US20160155644A1 (en) 2016-06-02
US9431261B2 (en) 2016-08-30
JP2016129221A (ja) 2016-07-14
EP4235751A3 (en) 2023-11-15
TW201631652A (zh) 2016-09-01
TWI680508B (zh) 2019-12-21
EP3029717A1 (en) 2016-06-08

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