TWI680508B - 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 - Google Patents

於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 Download PDF

Info

Publication number
TWI680508B
TWI680508B TW104140023A TW104140023A TWI680508B TW I680508 B TWI680508 B TW I680508B TW 104140023 A TW104140023 A TW 104140023A TW 104140023 A TW104140023 A TW 104140023A TW I680508 B TWI680508 B TW I680508B
Authority
TW
Taiwan
Prior art keywords
slurry
protective layer
layer
cmp
etchant
Prior art date
Application number
TW104140023A
Other languages
English (en)
Chinese (zh)
Other versions
TW201631652A (zh
Inventor
史考特Ｂ 辛格爾
Scott B. Singer
喬瑟夫Ｃ 波斯維特
Joseph C. Boisvert
丹尼爾Ｃ 羅
Daniel C. Law
克里斯多福Ｍ 費策
Christopher M. Fetzer
Original Assignee
美商波音公司
The Boeing Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商波音公司, The Boeing Company filed Critical 美商波音公司
Publication of TW201631652A publication Critical patent/TW201631652A/zh
Application granted granted Critical
Publication of TWI680508B publication Critical patent/TWI680508B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/02—Planarisation of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW104140023A 2014-12-01 2015-12-01 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 TWI680508B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/556,337 2014-12-01
US14/556,337 US9431261B2 (en) 2014-12-01 2014-12-01 Removal of defects by in-situ etching during chemical-mechanical polishing processing

Publications (2)

Publication Number Publication Date
TW201631652A TW201631652A (zh) 2016-09-01
TWI680508B true TWI680508B (zh) 2019-12-21

Family

ID=54542064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140023A TWI680508B (zh) 2014-12-01 2015-12-01 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷

Country Status (4)

Country Link
US (1) US9431261B2 (https=)
EP (2) EP4235751A3 (https=)
JP (1) JP6151340B2 (https=)
TW (1) TWI680508B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121013326A (zh) * 2024-05-22 2025-11-25 长鑫科技集团股份有限公司 半导体结构的制作方法以及半导体结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060218867A1 (en) * 2005-03-30 2006-10-05 Isamu Koshiyama Polishing composition and polishing method using the same
US20090186466A1 (en) * 2004-02-25 2009-07-23 Hrl Laboratories, Llc Self-masking defect removing method
WO2013018015A2 (en) * 2011-08-01 2013-02-07 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
EP2779216A1 (en) * 2011-11-08 2014-09-17 Fujimi Incorporated Polishing composition and polishing method using same, and substrate manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031163A (ja) 1998-07-13 2000-01-28 Denso Corp 半導体装置及びその製造方法
KR100343136B1 (ko) * 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
DE102007019565A1 (de) 2007-04-25 2008-09-04 Siltronic Ag Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
FR2994615A1 (fr) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Procede de planarisation d'une couche epitaxiee

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090186466A1 (en) * 2004-02-25 2009-07-23 Hrl Laboratories, Llc Self-masking defect removing method
US20060218867A1 (en) * 2005-03-30 2006-10-05 Isamu Koshiyama Polishing composition and polishing method using the same
WO2013018015A2 (en) * 2011-08-01 2013-02-07 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
EP2779216A1 (en) * 2011-11-08 2014-09-17 Fujimi Incorporated Polishing composition and polishing method using same, and substrate manufacturing method

Also Published As

Publication number Publication date
EP4235751A2 (en) 2023-08-30
US20160155644A1 (en) 2016-06-02
US9431261B2 (en) 2016-08-30
JP6151340B2 (ja) 2017-06-21
JP2016129221A (ja) 2016-07-14
EP4235751A3 (en) 2023-11-15
TW201631652A (zh) 2016-09-01
EP3029717A1 (en) 2016-06-08

Similar Documents

Publication Publication Date Title
JP5168966B2 (ja) 研磨方法及び研磨装置
CN102623327B (zh) 一种化学机械研磨方法
CN101005025A (zh) 降低厚度变化的化学机械抛光方法及半导体器件制备方法
JP5481284B2 (ja) 半導体ウェハの製造方法
JP2008198843A (ja) 基板載置台及びその表面処理方法
US20160035598A1 (en) Method for chemical planarization and chemical planarization apparatus
CN102814727A (zh) 一种用于浅沟槽隔离结构的化学机械研磨方法
CN107017161A (zh) 一种减小sti‑cmp过程中碟型凹陷的方法
JP2013128096A (ja) 化学的平坦化方法及び化学的平坦化装置
CN101308790A (zh) 移除基底上的绝缘层的方法和化学机械研磨工艺
CN102371532B (zh) 化学机械研磨工艺的返工方法
TWI680508B (zh) 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷
CN104078346A (zh) 半导体器件的平坦化方法
US20080014751A1 (en) Method of manufacturing semiconductor device
CN102760653B (zh) 金属栅极的形成方法
CN100353521C (zh) 使用化学机械研磨法制造半导体元件的内连线结构的方法
TW200410789A (en) Method for manufacturing metal line contact plug of semiconductor device
CN106272031A (zh) 一种化学机械研磨方法
US20180033636A1 (en) Method of fabricating a semiconductor structure
CN113528028A (zh) 化学机械抛光液、半导体结构及其制备方法
US8936729B2 (en) Planarizing method
CN112259454B (zh) 化学机械研磨制程
KR20050073044A (ko) 화학적기계연마 방법
CN100429043C (zh) 铝金属的化学机械研磨方法及研磨剂
CN108257885B (zh) 物理气相沉积中钛或氮化钛颗粒控片的使用方法