JP6145501B1 - 研磨用組成物及びシリコン基板の研磨方法 - Google Patents

研磨用組成物及びシリコン基板の研磨方法 Download PDF

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Publication number
JP6145501B1
JP6145501B1 JP2015251251A JP2015251251A JP6145501B1 JP 6145501 B1 JP6145501 B1 JP 6145501B1 JP 2015251251 A JP2015251251 A JP 2015251251A JP 2015251251 A JP2015251251 A JP 2015251251A JP 6145501 B1 JP6145501 B1 JP 6145501B1
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Japan
Prior art keywords
polishing
particles
primary particles
polishing composition
acid
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JP2015251251A
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Japanese (ja)
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JP2017117917A (ja
Inventor
麗子 秋月
麗子 秋月
高見　信一郎
信一郎 高見
誠 田畑
誠 田畑
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Fujimi Inc
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Fujimi Inc
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Priority to JP2015251251A priority Critical patent/JP6145501B1/ja
Priority to PCT/JP2016/083934 priority patent/WO2017110315A1/ja
Priority to TW105139487A priority patent/TW201730299A/zh
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Publication of JP6145501B1 publication Critical patent/JP6145501B1/ja
Publication of JP2017117917A publication Critical patent/JP2017117917A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2015251251A 2015-12-24 2015-12-24 研磨用組成物及びシリコン基板の研磨方法 Active JP6145501B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015251251A JP6145501B1 (ja) 2015-12-24 2015-12-24 研磨用組成物及びシリコン基板の研磨方法
PCT/JP2016/083934 WO2017110315A1 (ja) 2015-12-24 2016-11-16 研磨用組成物及びシリコン基板の研磨方法
TW105139487A TW201730299A (zh) 2015-12-24 2016-11-30 研磨用組成物及矽基板之研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015251251A JP6145501B1 (ja) 2015-12-24 2015-12-24 研磨用組成物及びシリコン基板の研磨方法

Publications (2)

Publication Number Publication Date
JP6145501B1 true JP6145501B1 (ja) 2017-06-14
JP2017117917A JP2017117917A (ja) 2017-06-29

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ID=59061145

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JP2015251251A Active JP6145501B1 (ja) 2015-12-24 2015-12-24 研磨用組成物及びシリコン基板の研磨方法

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JP (1) JP6145501B1 (zh)
TW (1) TW201730299A (zh)
WO (1) WO2017110315A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019116833A1 (ja) * 2017-12-15 2019-06-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200098573A (ko) 2017-12-22 2020-08-20 닛산 가가쿠 가부시키가이샤 레이저마크 주변의 융기를 해소하기 위한 연마용 조성물
JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7100552B2 (ja) * 2018-09-28 2022-07-13 日揮触媒化成株式会社 異形シリカ微粒子を含む研磨砥粒分散液およびその製造方法
KR102357727B1 (ko) 2019-10-03 2022-02-08 닛산 가가쿠 가부시키가이샤 양이온을 포함하는 레이저마크 주변의 융기를 해소하기 위한 연마용 조성물
WO2023063213A1 (ja) 2021-10-14 2023-04-20 日産化学株式会社 シリコンウェハーの１次研磨後に用いられる後研磨用組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5493528B2 (ja) * 2009-07-15 2014-05-14 日立化成株式会社 Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
JP2014093099A (ja) * 2012-10-31 2014-05-19 Kao Corp ガラスハードディスク基板用研磨液組成物

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019116833A1 (ja) * 2017-12-15 2019-06-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JPWO2019116833A1 (ja) * 2017-12-15 2020-12-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP7111739B2 (ja) 2017-12-15 2022-08-02 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法

Also Published As

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WO2017110315A1 (ja) 2017-06-29
TW201730299A (zh) 2017-09-01
JP2017117917A (ja) 2017-06-29

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