JP6144107B2 - Wafer cutting method - Google Patents

Wafer cutting method Download PDF

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JP6144107B2
JP6144107B2 JP2013099710A JP2013099710A JP6144107B2 JP 6144107 B2 JP6144107 B2 JP 6144107B2 JP 2013099710 A JP2013099710 A JP 2013099710A JP 2013099710 A JP2013099710 A JP 2013099710A JP 6144107 B2 JP6144107 B2 JP 6144107B2
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cutting
wafer
cutting blade
blade
cut
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JP2014220437A (en
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鈴木 稔
稔 鈴木
真樹 坂井
真樹 坂井
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株式会社ディスコ
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes

Description

  The present invention relates to a cutting method for cutting a workpiece such as a semiconductor wafer having a surface on which a laminate such as a protective film or TEG is formed.

  Conventionally, a cutting device (dicing device) for dividing a semiconductor wafer, a glass substrate, a resin substrate or the like into device chips is known. For example, as disclosed in Patent Document 1, two spindle units are provided. A two-spindle cutting machine having is also known. In such a two-spindle cutting apparatus, first, a half-cut is formed by forming a groove of a predetermined depth by the cutting blade of one spindle unit, and then the groove half-cut by the cutting blade of the other spindle unit is completely cut. A step cut such as performing a full cut is performed.

  Such a step cut is also performed when a test metal pattern called a test element group (TEG) is removed from a street where a division planned line is set when cutting a semiconductor wafer. That is, the TEG is first removed (half cut) with the cutting blade of one spindle unit to form the first cutting groove, and then the cutting blade of the other spindle unit is moved to the position of the first cutting groove. The second cutting groove is formed to completely cut the semiconductor wafer (full cut).

  By performing such a step cut, the TEG is removed in advance by a half cut, and a full cut is performed with a cutting blade different from the cutting blade used in the half cut. No clogging due to TEG occurs. Then, by preventing the cutting blade that performs full cutting from being clogged by TEG, it is possible to effectively prevent chipping from occurring on the back side of the wafer.

JP 2003-173986 A JP 2000-49120 A JP 2008-300555 A

  However, the cutting blade cuts workpieces such as wafers while rotating at high speed, but by continuing half-cutting for a long time or cutting the TEG pattern on the street, cutting chips such as resin adhere to the tip of the blade. Then, the blade is clogged, and the sharpness is reduced. In order to solve this problem, a dressing member dedicated sub-chuck table for sharpening the blade is provided at a position adjacent to the chuck table, or a dressing member is affixed at a position adjacent to the workpiece on the dicing tape. There are methods (see, for example, Patent Documents 2 and 3). In any case, it is necessary to provide a sub-chuck table or to prepare a special dicing frame, which increases costs.

  The present invention has been made in view of the above, and it is not necessary to prepare special equipment, and it is possible to cut a semiconductor wafer while eliminating clogging of a cutting blade for half cut without interrupting the cutting operation. It is an object to provide a method for cutting a wafer.

In order to solve the above-described problems and achieve the object, a wafer cutting method according to the present invention is laminated on the surface of a substrate with respect to a cutting blade having an annular cutting edge and rotating in a predetermined direction. A wafer cutting method in which a wafer on which a device is formed by a laminate is moved relative to a direction perpendicular to the rotation axis of the cutting blade and cut along a plurality of streets partitioning the device, After performing a tape adhering step for adhering a dicing tape to the back surface of the wafer, and the tape adhering step, the cutting blade is cut into the middle of the substrate deeper than the thickness of the laminate, and the cutting It said wafer in the same direction as the rotation of the cutting blade at a position where the blade and the wafer are opposed along the streets are relatively moved, to form a cutting groove In a state where the laminate removing step of removing the laminate, at any timing after performing the laminate removing step, rotate the cutting blade in the same direction as the rotational direction in the laminate removing step by Cutting along the cutting groove at a depth deeper than the cutting groove and shallower than the thickness from the groove bottom to the back surface of the cutting groove, and relatively moving the wafer in a direction opposite to the rotation direction of the cutting blade. And a sharpening step of cutting the substrate along the cutting groove to remove the laminate adhering to the tip of the cutting blade in the laminate removing step and sharpening the cutting blade. And
In the wafer cutting method, in the laminated body removing step, the wafer is cut with the first cutting blade that is the cutting blade, and the second cutting blade that is the cutting blade thinner than the thickness of the first cutting blade, The dicing tape is cut from the groove bottom of the cutting groove at a depth deeper than the thickness of the single wafer, and the second cutting blade is opposed to the wafer at a position where the second cutting blade faces the wafer. There is provided a dividing step of cutting the substrate of the wafer by relatively moving the wafer along the street in the same direction as the rotation direction.
In the wafer cutting method, the cutting blade is cut from the groove bottom of the cutting groove at a depth deeper than a thickness of the wafer alone and the dicing tape cannot be cut, and the cutting blade and the wafer are The method includes a dividing step of cutting the substrate of the wafer by moving the wafer relatively along the street in the same direction as the rotation direction of the cutting blade at an opposing position.

  In the wafer cutting method according to the present invention, the cutting blade for half cut from which the laminated body on the surface has been removed is returned to the cutting groove from which the laminated body has been removed, so that the cutting blade from which the laminated body has been removed is sharpened. Therefore, there is no need to provide a special mechanism and it is economical. Furthermore, since it is not necessary to stop production to sharpen the cutting blade, throughput can be improved.

FIG. 1 is a perspective view of a cutting apparatus that performs cutting by the wafer cutting method according to the embodiment. FIG. 2 is a detailed view of the cutting means shown in FIG. FIG. 3 is an explanatory diagram when the wafer is cut by the cutting apparatus shown in FIG. FIG. 4 is a flowchart of processes when the wafer is divided using the wafer cutting process according to the embodiment. FIG. 5 is an explanatory diagram of cutting in the laminate removal step. 6 is a cross-sectional view taken along the line AA in FIG. FIG. 7 is an explanatory diagram of sharpening in the sharpening process. 8 is a cross-sectional view taken along the line BB in FIG. FIG. 9 is an explanatory diagram of cutting in the dividing step. 10 is a cross-sectional view taken along the line CC of FIG.

  Hereinafter, embodiments of a wafer cutting method according to the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited by this embodiment. In addition, constituent elements in the following embodiments include those that can be easily replaced by those skilled in the art or those that are substantially the same.

Embodiment
FIG. 1 is a perspective view of a cutting apparatus that performs cutting by the wafer cutting method according to the embodiment. In the present embodiment, the X-axis direction is a direction orthogonal to both the direction of the rotation axis and the vertical direction of the cutting blade 15 described later, and the Y-axis direction is the direction of the rotation axis of the cutting blade 15 orthogonal to the vertical direction. And the Z-axis direction is the vertical direction. A cutting apparatus 1 shown in FIG. 1 includes a chuck table 5, two cutting means 10, and a cleaning / drying means 50. The cutting apparatus 1 used in the wafer cutting method according to the present embodiment is a facing dual type processing apparatus in which two cutting means 10 are arranged to face each other in the Y-axis direction.

  The cutting device 1 cuts the workpiece by moving the chuck table 5 holding the workpiece and the two cutting means 10 relative to each other. That is, the chuck table 5 is provided so as to be movable relative to the apparatus main body 2 in the X-axis direction, which is the machining feed direction, while holding the workpiece.

Here, the workpiece is an object to be machined and is not particularly limited. For example, a disk-shaped semiconductor wafer, optical device wafer, or ceramic that uses silicon, gallium arsenide (GaAs), or the like as a base material. Glass, sapphire (Al 2 O 3 ) -based disc-shaped inorganic material substrate, and disc-shaped ductile material such as metal and resin. In the present embodiment, the cutting apparatus 1 will be described on the assumption that the semiconductor wafer W is cut as a workpiece.

  The wafer W has, for example, a dicing tape T as an adhesive tape attached to the back surface that is the surface opposite to the surface that is a device side surface on which a plurality of devices are formed. Cutting is performed in a state of being fixed to the annular frame F by being attached to the annular frame F. In the cutting of the wafer W by the cutting apparatus 1, the wafer W is placed on the chuck table 5 on the surface on which the dicing tape T is adhered, and is sucked and held by the chuck table 5. This is performed in a state where the annular frame F is held by the arranged frame holding means 6.

  FIG. 2 is a detailed view of the cutting means shown in FIG. The two cutting means 10 include a first cutting means 11 and a second cutting means 12, and these cutting means 10 include a cutting blade 15, a spindle 20, a spindle housing 25, a nozzle 30, and a blade cover 35. And. That is, the first cutting means 11 includes the first cutting blade 16, the first spindle 21, the first spindle housing 26, the first nozzle 31, and the first blade cover 36. Similarly, the second cutting means 12 includes a second cutting blade 17, a second spindle 22, a second spindle housing 27, a second nozzle 32, and a second blade cover 37. . Among these, the second cutting blade 17 is formed with a thickness slightly thinner than the thickness of the first cutting blade 16.

  These cutting means 10 can be moved by moving means, respectively, and a Y-axis direction and a Z-axis direction can be obtained by a Y-axis moving means 40 that is an index feeding means and a Z-axis moving means 45 that is a cutting feed means. Can be moved to. That is, the first cutting means 11 is movable in the Y-axis direction and the Z-axis direction by the first Y-axis moving means 41 and the first Z-axis moving means 46, and the second cutting means 12 is The second Y-axis moving means 42 and the second Z-axis moving means 47 are movable in the Y-axis direction and the Z-axis direction. As a result, the first cutting means 11 and the second cutting means 12 can cut the region to be processed while supplying cutting water to the wafer W held on the chuck table 5.

  The cutting blade 15 has an annular cutting edge and is provided to be rotatable in a predetermined direction. Specifically, the cutting blade 15 is a cutting grindstone formed in an extremely thin ring shape that cuts the wafer W held on the chuck table 5 by rotating at a high speed. Has a blade. The cutting blade 15 is fixed to the spindle 20 in a replaceable manner by a fixing nut (not shown). The spindle housing 25 is formed in a cylindrical shape, and rotatably supports the inserted spindle 20 by an air bearing. The nozzle 30 jets and supplies the cutting fluid to the processing point of the cutting blade 15. The blade cover 35 holds the nozzle 30 in a detachable manner. Both the 1st cutting means 11 and the 2nd cutting means 12 are comprised by these structures.

  The cleaning / drying means 50 can clean and dry the wafer W after cutting. Specifically, the cleaning / drying means 50 cleans the wafer W by spraying a cleaning liquid onto the wafer W by a cleaning liquid spraying device while rotating the spinner table 51 by the power generated by the rotational drive source. It is possible to dry the wafer W by injecting gas from the gas injection device onto the wafer W.

  The cutting device 1 that performs cutting by the wafer W cutting method according to the present embodiment has the above-described configuration, and the operation thereof will be described below. FIG. 3 is an explanatory diagram when the wafer is cut by the cutting apparatus shown in FIG. The above-described cutting apparatus 1 is a processing apparatus that performs cutting by a so-called step cut, in which the wafer W is cut stepwise by the two cutting blades 15 of the first cutting blade 16 and the second cutting blade 17. . In other words, the cutting apparatus 1 uses the first cutting blade 16 that is the first cutting blade 15 in the thickness direction of the wafer W along the street S (see FIG. 5) that partitions the plurality of devices 67 (see FIG. 5). The remaining thickness of the wafer W is cut by the second cutting blade 17 which is the second cutting blade 15 along the cutting groove 66 (see FIG. 5).

  Further, when the wafer W is cut by the cutting apparatus 1, from the surface 61 side, which is the surface opposite to the surface on which the dicing tape T is attached, on the wafer W to which the dicing tape T is attached. , Cutting. In addition, the wafer W to be cut in this way has a laminate L such as a surface film having a circuit pattern such as a TEG (Test Element Group) laminated on the surface 61 side of the substrate 65 serving as a base of the wafer W. As a result, a plurality of devices 67 are formed on the wafer W.

  When cutting the wafer W with the cutting device 1, the back surface 62, which is the surface on which the dicing tape T is adhered, becomes the bottom surface and faces the chuck table 5, and the stacked body L is stacked. It is placed on the chuck table 5 in such a direction that the surface 61 which is the surface on the side facing the upper surface becomes the upper surface. Furthermore, the first cutting blade 16 and the second cutting blade 17 from the front surface 61 side of the wafer W in a state where the annular frame F is held by the frame holding means 6 and the back surface 62 side of the wafer W is sucked and held by the chuck table 5. And cut in stages. In other words, the first cutting blade 16 is provided as a cutting blade 15 for half-cutting, the second cutting blade 17 is provided as a cutting blade 15 for division, and the cutting apparatus 1 is configured to use these two cutting blades. The wafer W is cut stepwise using the blade 15.

  FIG. 4 is a flowchart of processes when the wafer is divided using the wafer cutting process according to the embodiment. When the wafer W is divided, the dicing tape T is first attached to the wafer W on which the laminate L is laminated in the tape attaching step (step ST11). The dicing tape T is attached to an annular frame F having a hole whose inner diameter is larger than the outer diameter of the wafer W. In this state, the back surface 62 of the wafer W is attached to the dicing tape T from the hole portion of the annular frame F. As a result, the dicing tape T is adhered to the entire back surface 62 of the wafer W.

  If a tape sticking process is implemented, next, the laminated body L currently laminated | stacked on the surface 61 of the wafer W will be removed by a laminated body removal process (step ST12). When removing the stacked body L, first, the wafer W is held by the chuck table 5 of the cutting apparatus 1 with the surface 61 facing upward (see FIG. 3). In this state, the laminated body L is removed by cutting the wafer W with the cutting blade 15 from the surface 61 side of the wafer W, that is, the side where the laminated body L is laminated.

  FIG. 5 is an explanatory diagram of cutting in the laminate removal step. 6 is a cross-sectional view taken along the line AA in FIG. The laminated body removing step is such that the first cutting blade 16 of the two cutting blades 15 is opposed to the surface 61 of the wafer W, and the outer peripheral surface of the rotating first cutting blade 16 is in contact with the street S of the wafer W. This is performed by relatively moving the first cutting blade 16 and the wafer W along the street S. In this laminated body removing step, the first cutting blade 16 is deeper than the laminated body L and shallower than the wafer W, and the vicinity of the lower end of the outer peripheral surface is moved from the laminated L side surface to the wafer W. Cut into the middle of the substrate 65 from the surface 61 side. As a result, the first cutting blade 16 cuts the wafer W at a depth that enters the wafer W from the surface on the laminated body L side.

  In the stacked body removing step, the wafer W is cut by the first cutting blade 16 and at the same time, the chuck table 5 holding the wafer W is relatively moved in a direction perpendicular to the rotation axis of the first cutting blade 16. The moving direction at that time is such that the chuck table 5 is moved in the same direction as the rotating direction near the lower end of the rotating first cutting blade 16, and the wafer W is moved relative to the first cutting blade 16 in this direction. . That is, the chuck table 5 is moved in the forward direction, which is the direction along the street S of the wafer W and the same direction as the rotation direction in the vicinity of the portion of the first cutting blade 16 that contacts the wafer W. In this state, the first cutting blade 16 is such that the first cutting blade 16 starts cutting the wafer W in the moving direction of the wafer W from the upper side to the lower side, that is, from the front surface 61 direction side to the rear surface 62 direction side. Cutting is performed by so-called down-cutting.

  As a result, the first cutting blade 16 cuts the wafer W from the surface on which the laminate L is laminated at a depth deeper than the thickness of the laminate L and shallower than the thickness of the wafer W. The cutting groove 66 is formed along the street S. In other words, the cutting groove 66 is formed by removing the laminated body L with the thickness of the first cutting blade 16 and further cutting the portion of the substrate 65 near the laminated body L with the thickness of the first cutting blade 16. It is formed. Thus, in the laminated body removing step, the wafer W is relatively moved along the street S in the rotational direction and the forward direction of the first cutting blade 16 at a position where the first cutting blade 16 and the wafer W face each other, and cutting is performed. By forming the groove 66, the stacked body L is removed.

  After performing the laminated body removing step, the first cutting blade 16 is sharpened in the sharpening step (step ST13). FIG. 7 is an explanatory diagram of sharpening in the sharpening process. 8 is a cross-sectional view taken along the line BB in FIG. In the sharpening step, the first cutting blade 16 that has cut the wafer W in the laminated body removing step is rotated in the same direction as the rotating direction in the laminated body removing step while bringing the outer peripheral surface into contact with the cutting grooves 66. The relative movement is performed in a direction opposite to the relative movement direction with respect to the wafer W in the stacked body removing step. In this sharpening step, the first cutting blade 16 is formed with a remaining thickness of the portion where the cutting groove 66 is formed on the wafer W, that is, a depth shallower than the thickness from the bottom of the cutting groove 66 to the back surface 62. The vicinity of the lower end of the surface is cut into the wafer W from the groove bottom of the cutting groove 66. Thus, the first cutting blade 16 cuts the wafer W at a depth that enters the wafer W from the groove bottom of the cutting groove 66.

  In the sharpening process, the wafer W is cut with the first cutting blade 16 as described above. In the sharpening process, unlike the stack removing process, the chuck table 5 rotates around the lower end of the rotating first cutting blade 16. Move in the opposite direction. That is, in the sharpening process, the chuck table 5 is moved in the direction opposite to the moving direction in the stack removing process while the rotation direction of the first cutting blade 16 is maintained in the rotating direction in the stack removing process. Specifically, in the laminate removing step, the wafer W is moved in the forward direction with the first cutting blade 16 being along the street S. When the first cutting blade 16 reaches the end of the street S, the wafer is moved. The chuck table 5 is moved so that W moves in the opposite direction.

  In other words, in the sharpening process, the rotation direction of the first cutting blade 16 is not changed, and the chuck table 5 is in the direction along the street S of the wafer W and the portion of the first cutting blade 16 that contacts the wafer W. It is moved in the reverse direction that is the opposite direction of the rotation direction in the vicinity. In this state, the first cutting blade 16 is such that the first cutting blade 16 starts cutting the wafer W in the moving direction of the wafer W from the lower side to the upper side, that is, from the back surface 62 direction side to the front surface 61 direction side. Cutting is performed by so-called up-cutting.

  As a result, the first cutting blade 16 cuts the cutting groove 66 deeper, and the chuck table 5 moves in the direction in which the wafer W is relatively moved in the direction opposite to the rotation direction of the first cutting blade 16. The substrate 65 is cut along the cutting groove 66 by the cutting blade 16. In the sharpening step, the wafer W is cut in the direction opposite to the moving direction of the wafer W by cutting the wafer W while relatively moving the wafer W in the direction opposite to the rotation direction of the first cutting blade 16 in this way. To do. Thereby, the laminated body L adhering to the front-end | tip of the 1st cutting blade 16, ie, the outer peripheral surface of the 1st cutting blade 16, at the laminated body removal process is removed, and the metal etc. which are contained in the laminated body L are removed. The first cutting blade 16 is sharpened by removing it from the outer peripheral surface.

  After performing the sharpening process, the wafer W is divided in the dividing process (step ST14). FIG. 9 is an explanatory diagram of cutting in the dividing step. 10 is a cross-sectional view taken along the line CC of FIG. In the dividing step, of the two cutting blades 15, the second cutting blade 17 is opposed to the surface 61 of the wafer W, and the outer peripheral surface of the rotating second cutting blade 17 is formed by a cutting groove 66 formed by the first cutting blade 16. The second cutting blade 17 and the wafer W are relatively moved along the cutting groove 66 while being in contact with each other. In this dividing step, the second cutting blade 17 is deeper than the thickness of the wafer W alone, and the dicing tape T attached to the back surface 62 of the wafer W is not deep enough to be cut, and the vicinity of the lower end of the outer peripheral surface is formed. The wafer W is cut from the groove bottom of the cutting groove 66. As a result, the second cutting blade 17 cuts the wafer W to such a depth that the substrate 65 of the wafer W is cut and the dicing tape T is not cut.

  Since the second cutting blade 17 is thinner than the first cutting blade 16, the second cutting blade 17 does not widen the groove width of the cutting groove 66 cut by the first cutting blade 16, and this cutting The substrate 65 is further cut from the groove bottom of the groove 66.

  In the dividing step, the chuck table 5 is moved in the same direction as the rotation direction in the vicinity of the lower end of the rotating second cutting blade 17 in the same manner as when the wafer W is cut by the first cutting blade 16 in the stacked body removing step. The wafer W is moved relative to the second cutting blade 17. That is, the chuck table 5 is moved in the forward direction, which is the same direction as the rotation direction in the vicinity of the portion in contact with the wafer W in the second cutting blade 17.

  As described above, in the dividing step, the cutting groove 66 is cut deeper by the second cutting blade 17, and the thickness including the dicing tape T attached to the back surface 62 of the wafer W is deeper than the thickness of the wafer W alone. The wafer W is cut along the cutting groove 66 at a shallow depth. As a result, the second cutting blade 17 is cut partway along the dicing tape T along the cutting groove 66 formed by the first cutting blade 16. Furthermore, while the wafer W is being cut in this way, the wafer W is relatively moved along the street S in the forward direction with respect to the rotation direction of the second cutting blade 17 at the position where the second cutting blade 17 and the wafer W face each other. Let Accordingly, the substrate 65 is divided along the cutting grooves 66 formed by the first cutting blade 16 without cutting the dicing tape T, and the devices 67 located on both sides of the cutting grooves 66 are divided.

  In addition, when the substrate 65 is divided along the predetermined street S in the dividing step using the second cutting blade 17 as described above, the laminate is formed on the other street S using the first cutting blade 16. A removal step is preferably performed.

  In the cutting method of the wafer W according to the above embodiment, the first cutting blade 16 is further deeply cut into the cutting groove 66 after the stacked body L is removed by forming the cutting groove 66 with the first cutting blade 16. The first cutting blade 16 is sharpened by relatively moving the wafer W in the direction opposite to the rotation direction of the first cutting blade 16. As a result, it is not necessary to provide a special mechanism, and the cost for providing an apparatus for cutting the wafer W can be suppressed, so that the economy can be improved. Furthermore, since the wafer W can be cut while eliminating the clogging of the first cutting blade 16 without interrupting the cutting operation, it is not necessary to stop production to sharpen the first cutting blade 16. Throughput can be improved.

  Further, since the cutting performance can be improved by cutting the wafer W while eliminating the clogging of the first cutting blade 16 in this way, the quality of each device 67 generated by cutting the wafer W is improved. Can be improved.

[Modification]
The above-described method for cutting the wafer W is a so-called cutting process in which the first cutting blade 16 and the second cutting blade 17 are used as the cutting blade 15 and the two cutting blades 15 are used in stages. Although it is used in the cutting device 1 that cuts the wafer W by step cutting, it may be used in other cutting devices 1. For example, the laminated body removing step and the dividing step may be performed by using the cutting device 1 that has one spindle 20 for cutting and performs division by one cutting blade 15 fixed to the spindle 20. In that case, after the laminated body L is removed by forming the cutting groove 66 with one cutting blade 15, a sharpening process is performed, and after the tip of the cutting blade 15 is dressed in the sharpening process, the cutting blade is again formed. 15, the wafer W is cut by performing a full cut of the cutting groove 66. Thereby, it is not necessary to prepare special equipment, and it is possible to cut the wafer W while eliminating the clogging of the cutting blade 15 without interrupting the cutting operation.

  Further, in the above-described method for cutting the wafer W, the timing for performing the sharpening process for the cutting blade 15 is not defined, but the timing for performing the sharpening process for the cutting blade 15 may be set as appropriate. For example, in order to position the cutting blade 15 on the next street S after cutting with the cutting blade 15 along the predetermined street S to the end of the street S while moving the wafer W in the stacked body removing step. When the wafer W moves in the opposite direction, the sharpening process of the cutting blade 15 may be performed on the street S. Alternatively, the sharpening process may be performed on only one street S in one wafer W on which a plurality of streets S are formed. It is preferable that the sharpening process is appropriately set and executed at an arbitrary timing after the stacked body removing process is performed in accordance with the size of the wafer W, the material of the stacked body L, the number of streets S, and the like.

  In the wafer W cutting method described above, the wafer W is moved in the forward direction with respect to the rotation direction of the cutting blade 15 in the stacked body removing step and the dividing step, and in the sharpening step, the wafer W is rotated by the cutting blade 15. Although it is moved in the opposite direction to the direction, the moving direction of the wafer W may be other directions. That is, the laminated body removing step and the dividing step are cut by down-cutting, and the sharpening step is cut by up-cutting, but the cutting direction at the time of cutting may be other directions. For example, the wafer W may be moved in the forward direction in the sharpening process, and the sharpening process may be performed by down-cutting. The moving direction of the wafer W is preferably set as appropriate according to the operation procedure of the cutting apparatus 1 and the desired finishing state of the cutting.

DESCRIPTION OF SYMBOLS 1 Cutting device 2 Apparatus main body 5 Chuck table 10 Cutting means 15 Cutting blade 16 1st cutting blade 17 2nd cutting blade 20 Spindle 25 Spindle housing 30 Nozzle 35 Blade cover 40 Y-axis moving means 45 Z-axis moving means 61 Front surface 62 Back surface 65 Substrate 66 Cutting groove W Wafer T Dicing tape L Laminate S Street

Claims (3)

  1. Relative to a cutting blade having an annular cutting edge and rotating in a predetermined direction, a wafer on which a device is formed by a laminate laminated on the surface of the substrate is relative to a direction perpendicular to the rotation axis of the cutting blade. A wafer cutting method of cutting along a plurality of streets dividing the device,
    A tape adhering step of adhering a dicing tape to the back surface of the wafer;
    After performing the tape adhering step, the cutting blade is cut in the middle of the substrate deeper than the thickness of the laminate, and the rotation direction of the cutting blade is the same at a position where the cutting blade and the wafer face each other. Laminate removal step of removing the laminate by moving the wafer in the direction along the street and forming a cutting groove;
    At an arbitrary timing after performing the laminated body removing step, the cutting blade is rotated in the same direction as the rotating direction in the laminated body removing step, and is deeper than the cutting groove along the cutting groove. Cutting at a depth shallower than the thickness from the bottom of the cutting groove to the back surface , cutting the substrate along the cutting groove by moving the wafer relative to the direction of rotation of the cutting blade, A sharpening step of sharpening the cutting blade by removing the laminate adhered to the tip of the cutting blade in the laminate removing step;
    A wafer cutting method comprising:
  2.   In the laminate removing step, the wafer is cut with the first cutting blade which is the cutting blade,
      Cutting the second cutting blade, which is the cutting blade thinner than the thickness of the first cutting blade, from the groove bottom of the cutting groove at a depth deeper than the thickness of the single wafer and the dicing tape cannot be cut; And a division step of cutting the substrate of the wafer by relatively moving the wafer along the street in the same direction as the rotation direction of the second cutting blade at a position where the second cutting blade and the wafer face each other. With
      The wafer cutting method according to claim 1.
  3.   The cutting blade is cut from the groove bottom of the cutting groove at a depth deeper than the thickness of the wafer alone and the dicing tape cannot be cut, and the cutting blade is positioned at a position where the cutting blade and the wafer face each other. A dividing step of cutting the substrate of the wafer by relatively moving the wafer along the street in the same direction as the rotation direction of
      The wafer cutting method according to claim 1.
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