JP2009302228A - Method for dicing wafer and process for manufacturing liquid-discharging head using the dicing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor element having an opening on the side of a front surface in a stable fashion, by reducing sticking residues on the front surface of a wafer of cut waste and the like, which are generated by wafer dicing at the time of cutting. <P>SOLUTION: Wafer dicing is performed for a one-cut line by both directional movements in a two-step cut. At this time, in the going direction a half-cut cut line 100A which cuts deeply into a wafer 101 by down-cut is formed. Furthermore, in the returning direction along the cut line 100A, the remaining work portion and dicing tape are fully cut by up-cut to form a cut line 100B. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a wafer dicing method for separating semiconductor elements from a wafer. In particular, a method of dicing a wafer in which a semiconductor element having an opening is formed like an ejection element of a liquid ejection head that ejects liquid such as ink from an orifice on the surface, and a plurality of arrays are manufactured, and manufacturing using the method The present invention relates to a liquid discharge head.

  FIG. 1 shows a dicing process according to a conventional example. As shown in FIG. 1A, a ring-shaped frame is formed on the back side of a wafer 101 formed by forming a plurality of semiconductor elements 101a on a silicon substrate. Adhering to the dicing tape 110 supported by K.

  Thereafter, the frame K is placed and fixed on a chuck table on a dicing apparatus (not shown) and positioned by an alignment apparatus. Thereafter, as shown in FIG. 1B, the wafer 101 is diced (cut and divided) along the cutting lines 101 b in the X and Y directions of the wafer 101.

  As shown in FIG. 2A, each semiconductor element 101a of the wafer 101, which is a workpiece to be diced, has an orifice layer 102 in which an orifice is formed, and an opening 103 communicating with the back surface side. A dicing tape 110 is attached to the back surface of the wafer 101 as shown in FIG.

  The dicing tape 110 has a film-like substrate 111, and an adhesive 112 is formed on the surface thereof in layers.

  As shown in FIG. 2B, in the dicing process in which dicing is performed by the dicing blade B, when a normal dicing machine is used, it is common to use a rotating blade having a diameter of about 50 mm to 75 mm. .

  In particular, when individual elements are completely cut and separated by dicing, the tip of the dicing blade B is cut into the dicing tape 110 by several tens of μm. This processing is called down cut.

  For this reason, as shown in FIG. 3, at the time of dicing, cutting waste H <b> 1 is generated by cutting the wafer 101, and cutting waste H <b> 2 is generated from the film-like substrate 111 and the adhesive 112 of the dicing tape 110. The cutting wastes H1 and H2 are simultaneously scattered by the rotational force of the dicing blade B and adhere to the surface of the wafer 101 being cut.

  Usually, the processing area by the dicing blade B is set several millimeters to several tens of millimeters larger than the size (outer diameter) of the wafer 101, and the next cutting line after the dicing blade B completely passes the outer edge of the wafer 101. Move to.

  For this reason, a portion where the dicing blade B cuts only the dicing tape 110, that is, a so-called workpiece outside processing portion 110a is generated at the start and end of each cutting line 101b on the wafer 101.

  In other words, for each cutting line 101b of the wafer 101, the lowermost end of the dicing blade B moves along the extension of the cutting line 101b while cutting the work outside processing part 110a extending to the empty area of the dicing tape 110 by cutting several tens of microns. To do.

  In addition, the adhesive surface of the adhesive 112 of the dicing tape 110 is exposed in the empty area between the wafer 101 and the frame K.

  Therefore, the cutting waste H2 mixed with the adhesive is also generated from the workpiece outside processing part 110a of the dicing tape 110 and adheres to the surface of the wafer 101.

  Of the cutting chips H1 and H2 adhering to the wafer 101, the silicon cutting chips H1 generated from the wafer 101 can be removed by the cleaning step shown in FIG.

  After dicing along the cutting line 101b, the dicing tape 110 is irradiated with ultraviolet rays from the back side of the wafer 101, and then each semiconductor element 101a is peeled off from the dicing tape 110 as shown in FIG. Then pick up.

  On the other hand, the cutting waste H2 including the adhesive attached to the orifice layer 102 on the surface of the wafer 101 maintains the adhesive force even after the pick-up, and further increases the adhesive force when heated in the heat process after mounting. And difficult to remove.

  As a result, as shown in FIG. 2 (e), when the cutting waste H2 containing the adhesive attached to the periphery of the orifice 102a of the orifice layer 102 causes droplets such as ink to fly from the orifice 102a, the droplets are cut. It is pulled toward the waste H2. For this reason, the droplets do not fly straight, which is a cause of so-called “swing”, and the image quality of the printer or the like is greatly reduced.

As a means for removing dirt such as cutting debris adhering to and around the wafer cutting line at the time of cutting, the wafer mounting table or cutting head is moved while the cutting wafer line is moved along the cutting wafer line. There is a method of cleaning with cutting water. (See Patent Document 1)
JP-A-1-321203

  However, in the conventional method, it is possible to remove the silicon cutting waste H1 generated from the wafer 101, but if the cutting waste H2 mixed with the adhesive adheres, it is difficult to remove by simple cleaning.

  When the semiconductor element cut out from the wafer is an ejection element of the liquid ejection head, “swing” in the ejection direction based on the attachment of the cutting dust to the orifice 102a occurs, and stable droplet ejection becomes impossible.

  At the time of conventional down-cut processing, a large amount of cutting waste H2 mixed with the adhesive of the dicing tape adheres downstream of the cutting line on the opposite side of the wafer 101 in the feed direction of the dicing blade B.

  Further, since the surface of the wafer 101 is coated with a water repellent, the cutting waste H2 is more likely to adhere. The attached cutting waste needs to be removed by extending the cleaning time in the cleaning process after cutting.

  An object of the present invention is to provide a wafer dicing method capable of solving the above-described problems of the prior art and a liquid discharge head manufactured by using this method. An example of the purpose is to stably manufacture a semiconductor element having an opening on the surface side by reducing the residue remaining on the wafer surface or the like by cutting wafer dicing during cutting.

  In order to achieve the above object, one embodiment of the present invention is a wafer dicing method for separating a wafer in which a plurality of semiconductor elements are arranged into each of the semiconductor elements along a cutting line. In this dicing method, dicing is performed by a reciprocating operation in a two-stage cut on one cutting line, and when the dicing blade moves in the forward direction, the wafer is cut at a predetermined depth by the first cut and restored. When moving in the direction, the remaining portion and the dicing tape are cut by the second cut.

  According to another aspect of the present invention, there is provided a wafer dicing method in which a wafer in which a plurality of ejection elements for ejecting liquid is arranged on the surface side is separated into the ejection elements along a cutting line. In this dicing method, dicing is performed by a reciprocating operation in a two-stage cut on one cutting line, and when the dicing blade moves in the forward direction, the wafer is cut at a predetermined depth by the first cut and restored. When moving in the direction, the remaining portion and the dicing tape are cut by the second cut.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesion residue of the cutting waste to the wafer surface etc. by wafer dicing at the time of a cutting | disconnection can be reduced, and the semiconductor element which has an opening part in the surface side can be manufactured stably.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, the same reference numerals are used for the same components as described in the background art.

  As shown in FIG. 1A, in a dicing method in which a plurality of semiconductor elements 101a are cut and separated by a dicing blade B, an adhesive dicing tape 10 is attached so as to close an opening of a ring-shaped frame K. To wear. Then, the back side of the wafer 101 is attached to the center portion of the dicing tape 110.

  Thus, the wafer 101 is held by mounting the back side of the wafer 101 on the dicing tape 10.

  An annular space is formed between the outer peripheral surface of the wafer 101 attached to the dicing tape 110 and the inner peripheral surface of the frame K. After fixing the frame K to the support base, as shown in FIG. 1B, the wafer 101 is diced from the surface side by a dicing blade B and divided into individual semiconductor elements 101a.

  In the dicing method, as shown in FIG. 6, dicing is performed in a reciprocating operation in a two-stage cut with a single spindle in one cut line for dicing. At this time, in one-way reciprocating dicer scanning, cutting is performed with a down cut that is the first step in the forward direction, and with an up cut that is the second step in the backward direction.

  That is, in the forward direction, the wafer 101 is down-cut to form a half-cut forward cut line 100A at a predetermined depth, and then the backward cut line 100B is up-cut to the remaining work part and dicing tape. And make a full cut.

  With respect to the feed speed of the dicing blade B at this time, the return direction for cutting the dicing tape 110 is set faster than the forward direction so that the cutting waste H2 mixed with the adhesive of the dicing tape stays and does not accumulate.

  The cutting depth of the backward cut line 100B on the wafer 101 is made shallower in order to reduce the cutting load on the dicing blade B in the backward direction than in the forward direction. As a result, cutting waste generated by dicing is reduced, and high throughput can be realized.

  A wafer dicing method according to an embodiment of the present invention will be described with reference to FIGS.

  When dicing the wafer 101 with the dicing apparatus, the wafer 101 is held at the position of the chuck table, and the alignment is performed by recognizing the cutting line 101b with an alignment apparatus incorporated in the dicing apparatus (also called a dicer).

  When the wafer 101 is first placed on the chuck table, an image processing error will occur if a certain position does not appear. Therefore, as shown in FIG. 1A, the dicing tape 110 is attached to the back surface of the ring-shaped frame K with a part of the outer periphery cut away so as to facilitate alignment.

  The wafer 101 is adhered to the adhesive surface of the dicing tape 10 exposed at the opening of the frame K.

  At this time, the wafer 101 is integrated with the frame K via the dicing tape 10 by aligning the outer periphery of the wafer 101 and the frame K with the orientation flat and performing the above-described adhesion.

  In the process of mounting the wafer 101 on the dicing tape 110, a so-called tape mounter is generally used. That is, generally, the dicing tape 110 is attached to the frame K and the wafer 101 at the same time, and the dicing tape 110 is applied to the back surface of the frame K and cut into a circle.

  In this embodiment, as shown in FIG. 2, as a dicing tape 110, a Lintec stock in which a radical polymerization type acrylic pressure-sensitive adhesive 112 having a predetermined ultraviolet curable adhesive force is applied on a film substrate 111 is used. Company D-105V was used. The tape thickness is 5 μm for the adhesive 112 and 80 μm for the film substrate 11.

  As the wafer 101, a silicon wafer having a diameter of 150 mm and a thickness of about 0.6 mm on which a plurality of semiconductor elements 101a constituting the ejection elements of a liquid ejection head mounted on an ink jet recording apparatus (printer) is formed.

  As shown in FIG. 2A, an orifice layer 102 having a plurality of orifices (pore openings) 102a, which is a discharge means for discharging liquid ink, is formed on the surface of each semiconductor element 101a. ing. Further, in order to stably supply ink to the orifice 102a on the surface, the back surface side of the semiconductor element 101a is processed with high accuracy by anisotropic etching based on the surface pattern.

  Dicing is performed as shown in FIGS. 1C and 2D to separate the semiconductor element 101a. As a dicing condition, a dicing machine A-WD5000A manufactured by Tokyo Seimitsu Co., Ltd. was used as a dicing apparatus, and rotation was performed at 45000 rpm.

  The processing speed is 30 mm / second when fully cut by down-cutting, 30 mm / second in the forward direction in reciprocal cutting according to the present invention, 30 mm / second in the backward direction, or 60 mm / second with increased speed. It was done in. The dicing blade used was a product number NBC-ZH2050 (blade thickness 50 μm) manufactured by DISCO Corporation.

  FIG. 7 shows the relationship between the dicing blade B, the wafer 101 and the dicing tape 110 during dicing. The tip of the dicing blade B is cut into the dicing tape 110 to a depth of 35 μm, and the uncut amount is set to 50 μm.

  The dicing blade B cuts the dicing tape 110 by 30 μm further below the adhesive 112 layer. Therefore, the tapered portion near the tip of the dicing blade B can make the cut surface of the wafer 101 flat regardless of the cut portion of the wafer 101.

  FIG. 3 shows the cutting length of the wafer, and the cutting length 10b of the wafer 101 cut into the dicing tape 110 is a length obtained by adding about 11 mm to the length of the cutting line 1b of the wafer 101. In general, when a dicing blade B diameter, wafer size, and wafer thickness are input, the dicing apparatus sets the cutting length 10b of the dicing tape 110 in consideration of a margin.

  In the dicing process shown in FIG. 3, full cutting is performed by down-cutting, and cutting waste H <b> 1 is generated from the wafer 101, and cutting scraps H <b> 1 and H <b> 2 are generated from the dicing tape 110. These cutting wastes are simultaneously scattered by the rotational force of the rotating dicing blade B and adhere to the surface of the wafer 101 being cut.

  FIG. 4 shows a machining trajectory when the downcut shown in FIG. 3 is performed.

  In FIG. 4, while supplying cutting water as in the background art, the wafer 101 is cut along a cut line 10A indicated by a solid line in the drawing.

  After cutting, the XY table moves to the cutting start position of the cut line 12A while performing index feed in the Y direction along the empty scan 11A indicated by the broken line in FIG. 4, and cuts the cut line 12A. To do.

  Thereafter, the above-described cutting operation is repeated in a predetermined pitch direction 10. After the predetermined number of operations are completed in parallel with the wafer 101, the XY table is turned 90 degrees, and the same cutting operation is performed at every predetermined pitch.

  When the cutting waste adhering to the orifice 102a after being separated into the respective semiconductor elements 101a is counted, a large amount adheres downstream of the cutting line on the opposite side of the dicing blade B in the feed direction.

  In the present invention, as shown in FIG. 6, dicing is performed by a reciprocating operation in a two-stage cut along one cutting line. At this time, in one-way reciprocation of the dicer, cutting is performed by down-cutting in the forward direction and up-cutting in the backward direction.

  That is, in the forward direction, a half-cut cut line 100A is formed in the wafer 101 by down-cut. Further, in the backward direction along the cut line 100A, the remaining work part and the dicing tape are fully cut by up-cutting to form the cut line 100B. As a result, the adhesion of cutting waste adhering to the orifice layer can be reduced. Further, the effect is further increased by increasing the backward processing speed than in the forward direction.

  Regarding the cutting depth, the cutting load on the dicing blade B is made shallower in order to increase the processing speed in the case of the forward direction cutting line 100A for cutting into the wafer 101 and the backward direction cutting line 100B for cutting into the dicing tape. It is desirable to reduce.

  In the dicing process shown in FIG. 5, the up-cut operation in the backward direction for cutting into the dicing tape, which is a feature of the present invention, is shown.

  The feeding direction of the dicing blade B and the discharge direction of the cutting waste are set in the same direction. As a result, even if the cutting waste H1 generated from the wafer 101 and the cutting scraps H1 and H2 generated from the dicing tape 110 are scattered at the same time, the residence time after adhering to the wafer 101 is small and discharged out of the wafer 101. Dicing can be done.

  FIG. 6 shows the machining locus of the present invention including the backward dicing shown in FIG. While supplying cutting water as in the case of the background art, the wafer 101 is cut at a predetermined depth by down-cutting along the forward cut line 100A shown by a solid line in FIG.

  After the cutting, the dicing blade B maintains the rotational direction and returns to the cutting start position in the forward direction 100A along the backward cutting line 100B that is the same as the forward cutting line 100A while cutting into the dicing tape by up-cutting.

  Then, it moves to the cutting start position of the forward direction cut line 110A, and cuts the cut line 110A. Thereafter, the above-described cutting operation is repeated in a predetermined pitch direction 20.

  After the predetermined number of operations are completed in parallel with the wafer 101, the XY table is turned 90 degrees, and the same cutting operation is performed at every predetermined pitch. In this way, the wafer 101 is cut into a lattice shape to form a plurality of semiconductor elements 101a.

  In the step shown in FIG. 1D, the wafer 101 after dicing and cleaning is removed from the dicing apparatus for each frame K. Then, all the adhesive 112 of the dicing tape 110 is cured by irradiating the entire surface with the ultraviolet light P from the back surface of the dicing tape 10.

  Each semiconductor element 101a can be easily picked up from the wafer and the dicing tape 110 as shown in FIG. 1D and FIG. 2D by reducing the adhesive force of the wafer 101 as the adherend. Can do.

  FIG. 8 shows an ink jet recording head as a liquid ejection head on which ejection elements which are semiconductor elements obtained by the dicing method of the present embodiment are mounted, and the assembly is performed in the following steps.

1) Step of mounting the black element 52A and the color element 52B, which are ejection elements, separated from the two types of wafers on the mount substrate 56 2) The electrode terminals of the flexible substrate 57 and the electrode portions of the elements 52A and 52B 3) Connection and sealing of electrode terminals of flexible substrate 57 and electrode portions of each element 52A, 52B 4) Above element mounting portion, ink tank 50, ink supply unit Assembling with an ink supply member which is a liquid supply means such as 58, tank holder 59, etc. The ink jet recording apparatus produced by the above-described process was capable of forming a stable liquid without “swinging” of droplets. In addition, excellent reliability without orifice clogging or ejection failure was obtained during long-term use.

  As described above, in the dicing method according to this embodiment, the cutting waste discharging direction and the cutting direction are set to the same direction. Thus, dicing is performed while the cutting waste H2 mixed with the adhesive of the dicing tape is discharged toward the cutting direction on the cutting line of the wafer 101. In particular, during the same reciprocating movement of the dicing blade, the cutting direction can be reduced by cutting the blade in the forward direction and cutting the blade in the backward direction by cutting the blade. it can.

  For this reason, the scattering time of the scattered cutting waste H2 on the wafer is small, and it is difficult for the cutting waste to be deposited. Therefore, undesirable adhesion residue of the cutting waste on the surface of the semiconductor element can be reduced and high throughput can be realized.

  When the semiconductor element cut out from the wafer is an ejection element of a liquid ejection head, there is no “swing” in the ejection direction based on the attachment of cutting dust to the periphery of the orifice 102a, and stable ejection of liquid droplets is possible. A high liquid discharge head, a printer, and the like can be realized.

It is process drawing explaining the general dicing method of a wafer with a perspective view. FIG. 2 is a process diagram illustrating a general liquid discharge head that is cut and separated by the dicing method of FIG. 1 in a cross-sectional view. It is a figure explaining generation | occurrence | production of the cutting waste in the conventional dicing process. It is explanatory drawing of the process locus | trajectory at the time of performing the dicing process by a down cut. It is a figure explaining generation | occurrence | production of the cutting waste in the dicing process in this invention. It is explanatory drawing of the process locus | trajectory at the time of performing the dicing process by the reciprocating cut in this invention. It is a figure explaining the notch | incision by a dicing blade. It is a figure explaining the assembly process of a liquid discharge head.

Explanation of symbols

20 Pitch direction 101 Wafer 100A Forward direction cut line 100B Reverse direction cut line 110A Forward direction cut line

Claims (4)

A wafer dicing method for separating a wafer in which a plurality of semiconductor elements are arranged into each of the semiconductor elements along a cutting line,
When dicing is performed by a reciprocating operation in a two-stage cut in one cutting line, and when the dicing blade moves in the forward direction, the wafer is cut at a predetermined depth by the first cut and moved in the backward direction. A dicing method characterized in that the remaining portion and the dicing tape are cut in a second cut. A wafer dicing method for separating a wafer in which a plurality of ejection elements that eject liquid on the surface side are arranged into each of the ejection elements along a cutting line,
When dicing is performed by a reciprocating operation in a two-stage cut in one cutting line, and when the dicing blade moves in the forward direction, the wafer is cut at a predetermined depth by the first cut and moved in the backward direction. A dicing method characterized in that the remaining portion and the dicing tape are cut in a second cut.   3. The dicing blade feed speed at the time of dicing is faster in the backward direction than in the forward direction, and the cutting depth to the wafer is shallower in the backward direction than in the forward direction. The dicing method as described.   A liquid discharge head comprising: a discharge element separated by the dicing method according to claim 1; and a liquid supply unit that supplies a liquid to the discharge element.

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