JP4874602B2 - Adhesive tape used for wafer processing method and wafer processing method - Google Patents

Adhesive tape used for wafer processing method and wafer processing method Download PDF

Info

Publication number
JP4874602B2
JP4874602B2 JP2005246521A JP2005246521A JP4874602B2 JP 4874602 B2 JP4874602 B2 JP 4874602B2 JP 2005246521 A JP2005246521 A JP 2005246521A JP 2005246521 A JP2005246521 A JP 2005246521A JP 4874602 B2 JP4874602 B2 JP 4874602B2
Authority
JP
Japan
Prior art keywords
wafer
chuck
region
semiconductor wafer
adhesive tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005246521A
Other languages
Japanese (ja)
Other versions
JP2007059829A (en
Inventor
一馬 関家
Original Assignee
株式会社ディスコ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ディスコ filed Critical 株式会社ディスコ
Priority to JP2005246521A priority Critical patent/JP4874602B2/en
Priority claimed from US11/505,895 external-priority patent/US7608523B2/en
Publication of JP2007059829A publication Critical patent/JP2007059829A/en
Application granted granted Critical
Publication of JP4874602B2 publication Critical patent/JP4874602B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に複数のデバイスが形成されたウエーハの加工方法およびウエーハの加工方法に用いる粘着テープに関する。   The present invention relates to a wafer processing method in which a plurality of streets are formed in a lattice shape on the surface and a plurality of devices are formed in a plurality of regions partitioned by the plurality of streets, and an adhesive tape used for the wafer processing method About.

半導体デバイス製造工程においては、略円板形状である半導体ウエーハの表面に格子状に配列されたストリートと呼ばれる分割予定ラインによって複数の領域が区画され、この区画された領域にIC、LSI等のデバイスを形成する。そして、半導体ウエーハをストリートに沿って切断することによりデバイスが形成された領域を分割して個々の半導体チップを製造している。また、サファイヤ基板の表面に窒化ガリウム系化合物半導体等が積層された光デバイスウエーハもストリートに沿って切断することにより個々の発光ダイオード、レーザーダイオード等の光デバイスに分割され、電気機器に広く利用されている。   In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a lattice pattern on the surface of a substantially wafer-shaped semiconductor wafer, and devices such as ICs, LSIs, etc. are partitioned in the partitioned regions. Form. Then, the semiconductor wafer is cut along the streets to divide the region in which the device is formed to manufacture individual semiconductor chips. In addition, optical device wafers with gallium nitride compound semiconductors laminated on the surface of a sapphire substrate are also divided into individual optical devices such as light emitting diodes and laser diodes by cutting along the streets, and are widely used in electrical equipment. ing.

上述した半導体ウエーハや光デバイスウエーハ等のストリートに沿った切断は、通常、ダイサーと称されている切削装置によって行われている。この切削装置は、半導体ウエーハ等の被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物を切削する切削ブレードを備えた切削手段と、チャックテーブルと切削手段とを相対的に移動せしめる加工送り手段とを具備している。切削手段は、回転スピンドルと該スピンドルに装着された切削ブレードおよび回転スピンドルを回転駆動する駆動機構を備えたスピンドルユニットを含んでいる。(例えば、特許文献1参照。)
特開平7−106284号公報
上述した半導体ウエーハや光デバイスウエーハ等のストリートに沿った切断は、通常、ダイサーと称されている切削装置によって行われている。この切削装置は、半導体ウエーハ等の被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物を切削する切削ブレードを備えた切削手段と、チャックテーブルと切削手段とを相対的に移動せしめる加工送り手段とを具備している。切削手段は、回転スピンドルと該スピンドルに装着された切削ブレードおよび回転スピンドルを回転駆動する駆動機構を備えたスピンドルユニットを含んでいる。(例えば、特許文献1参照。)
特開平7−106284号公報
Cutting along the streets of the above-described semiconductor wafer, optical device wafer, or the like is usually performed by a cutting device called a dicer. The cutting apparatus includes a chuck table for holding a workpiece such as a semiconductor wafer, a cutting means having a cutting blade for cutting the workpiece held on the chuck table, and a chuck table and the cutting means. And a processing feed means for moving the workpiece. The cutting means includes a spindle unit having a rotary spindle, a cutting blade mounted on the spindle, and a drive mechanism for driving the rotary spindle to rotate. (For example, refer to Patent Document 1.) Cutting along the streets of the above-described semiconductor wafer, optical device wafer, or the like is usually performed by a cutting device called a dicer. The cutting apparatus includes a chuck table for holding a workpiece such as a semiconductor wafer, a cutting means Having a cutting blade for cutting the workpiece held on the chuck table, and a chuck table and the cutting means. And a processing feed means for moving the workpiece. The cutting means includes a spindle unit having a rotary spindle, a cutting blade mounted on the spindle, and a drive mechanism for driving the rotary spindle to rotate. (For example, refer to Patent Document 1.)
JP-A-7-106284 JP-A-7-106284

また、上述した半導体ウエーハや光デバイスウエーハ等のウエーハをストリートに沿って分割する方法として、ウエーハに形成されたストリートに沿ってパルスレーザー光線を照射することによりレーザー加工溝を形成し、このレーザー加工溝に沿って破断する方法が提案されている。(例えば、特許文献2参照。)
特開平10−305420号公報Further, as a method of dividing a wafer such as the above-described semiconductor wafer or optical device wafer along the street, a laser processing groove is formed by irradiating a pulse laser beam along the street formed on the wafer. A method of breaking along the line has been proposed. (For example, see Patent Document 2.)
JP-A-10-305420
また、上述した半導体ウエーハや光デバイスウエーハ等のウエーハをストリートに沿って分割する方法として、ウエーハに形成されたストリートに沿ってパルスレーザー光線を照射することによりレーザー加工溝を形成し、このレーザー加工溝に沿って破断する方法が提案されている。(例えば、特許文献2参照。)
特開平10−305420号公報Further, as a method of dividing a wafer such as the above-described semiconductor wafer or optical device wafer along the street, a laser processing groove is formed by irradiating a pulse laser beam along the street formed on the wafer. A method of breaking along the line has been proposed. (For example, see Patent Document 2.)
JP-A-10-305420
また、上述した半導体ウエーハや光デバイスウエーハ等のウエーハをストリートに沿って分割する方法として、ウエーハに形成されたストリートに沿ってパルスレーザー光線を照射することによりレーザー加工溝を形成し、このレーザー加工溝に沿って破断する方法が提案されている。(例えば、特許文献2参照。)
特開平10−305420号公報
Further, as a method of dividing a wafer such as the above-described semiconductor wafer or optical device wafer along the street, a laser processing groove is formed by irradiating a pulse laser beam along the street formed on the wafer. A method of breaking along the line has been proposed. (For example, see Patent Document 2.)
JP-A-10-305420
また、上述した半導体ウエーハや光デバイスウエーハ等のウエーハをストリートに沿って分割する方法として、ウエーハに形成されたストリートに沿ってパルスレーザー光線を照射することによりレーザー加工溝を形成し、このレーザー加工溝に沿って破断する方法が提案されている。(例えば、特許文献2参照。)
特開平10−305420号公報
Further, as a method of dividing a wafer such as the above-described semiconductor wafer or optical device wafer along the street, a laser processing groove is formed by irradiating a pulse laser beam along the street formed on the wafer. A method of breaking along the line has been proposed. (For example, see Patent Document 2.)
JP-A-10-305420

上述したように分割されるウエーハは、ストリートに沿って切断する前に裏面を研削またはエッチングによって所定の厚さに形成される。近年、電気機器の軽量化、小型化を達成するためにウエーハの厚さを50μm以下に形成することが要求されている。   As described above, the wafer to be divided is formed to have a predetermined thickness by grinding or etching the back surface before cutting along the street. In recent years, it has been required to form a wafer with a thickness of 50 μm or less in order to reduce the weight and size of electrical equipment.

而して、ウエーハの厚さを50μm以下に形成すると破損し易くなり、ウエーハの搬送等の取り扱いが困難になるという問題がある。   Thus, when the thickness of the wafer is 50 μm or less, the wafer is easily broken, and there is a problem that handling of the wafer is difficult to handle.

本発明は上記事実に鑑みてなされたものであり、その主たる技術的課題は、ウエーハの厚さを薄くしてもウエーハの搬送、粘着テープを介して環状のフレームへの配設、切削等の取り扱いが容易なウエーハの加工方法およびウエーハの加工方法に用いる粘着テープを提供することにある。   The present invention has been made in view of the above-mentioned facts, and its main technical problem is that even if the thickness of the wafer is reduced, the wafer is transported, disposed on an annular frame via an adhesive tape, cutting, etc. An object of the present invention is to provide a wafer processing method that is easy to handle and an adhesive tape used for the wafer processing method.

上記主たる技術課題を解決するため、本発明によれば、表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する余剰領域とを備えたウエーハの加工方法であって、
ウエーハの裏面における該デバイス領域に対応する領域を除去して円形状の凹部を形成し該デバイス領域の厚さを所定厚さに形成するとともに、ウエーハの裏面における該余剰領域に対応する領域を残存させて環状の補強部を形成する補強部形成工程と、
表面に粘着層が形成さているとともに複数の貫通細孔を備えた粘着テープの外周部表面を環状のフレームの開口部を覆うように装着する粘着テープ装着工程と、 An adhesive tape attachment process in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through pores is attached so as to cover the opening of the annular frame.
該環状のフレームに装着された該粘着テープにおけるウエーハ貼着領域の裏面を加工装置の被加工物を吸引保持するための該円形状の凹部の内径より小さい外径に形成されたチャックテーブル上に載置するとともに、該環状のフレームを該チャックテーブルに配設されたクランプによって固定するフレーム固定工程と、 The back surface of the wafer attachment region of the adhesive tape mounted on the annular frame is placed on a chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing apparatus. A frame fixing step of mounting and fixing the annular frame with a clamp arranged on the chuck table.
該チャックテーブルに載置された該粘着テープにおけるウエーハ貼着領域の表面にウエーハの該デバイス領域に対応する裏面を載置し、該チャックテーブルの吸引保持領域に吸引力を作用して該粘着テープを吸引保持領域に吸引保持するとともに、該粘着テープに設けられた該複数の貫通細孔を通してウエーハに吸引力を作用せしめることによりウエーハの該デバイス領域に対応する裏面を吸引して該粘着テープの表面に貼着せしめるウエーハ貼着工程と、 The back surface of the waiha corresponding to the device region is placed on the front surface of the waiha attachment region of the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding region of the chuck table to act on the adhesive tape. Is sucked and held in the suction holding region, and the back surface of the adhesive tape corresponding to the device region is sucked by applying a suction force to the wai through the plurality of through pores provided in the adhesive tape. The waiha sticking process to stick to the surface and
該チャックテーブルの吸引保持領域に吸引保持された該粘着テープの表面に貼着されているウエーハの該余剰領域を該加工装置の加工手段によって切断し除去する余剰領域除去工程と、 A step of removing the surplus region by cutting and removing the surplus region of the wafer attached to the surface of the adhesive tape sucked and held in the suction holding region of the chuck table by the processing means of the processing apparatus.
該チャックテーブルの吸引保持領域に吸引保持された該粘着テープの表面に貼着せしめられ該余剰領域が除去されたウエーハを該加工装置の加工手段によってストリートに沿って切断する分割工程と、を含む、 The wafer which is attached to the surface of the adhesive tape which is suction-held in the suction-holding region of the chuck table and the excess region is removed is cut along the street by the processing means of the processing apparatus. ,
ことを特徴とするウエーハの加工方法が提供される。 A method for processing a wafer is provided. In order to solve the main technical problem, according to the present invention, a device region in which a plurality of streets are formed in a lattice shape on the surface and a plurality of devices are formed in a plurality of regions partitioned by the plurality of streets. And a wafer processing method comprising a surplus area surrounding the device area, In order to solve the main technical problem, according to the present invention, a device region in which a plurality of streets are formed in a lattice shape on the surface and a plurality of devices are formed in a plurality of regions partitioned by the plurality of streets. And a wafer processing method comprising a surplus area surrounding the device area,
A region corresponding to the device region on the back surface of the wafer is removed to form a circular recess to form the thickness of the device region to a predetermined thickness, and a region corresponding to the surplus region on the back surface of the wafer remains. A reinforcing portion forming step for forming an annular reinforcing portion; A region corresponding to the device region on the back surface of the wafer is removed to form a circular recess to form the thickness of the device region to a predetermined thickness, and a region corresponding to the surplus region on the back surface of the wafer remains . A reinforcing portion forming step for forming an annular reinforcing portion;
An adhesive tape mounting step in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through-holes is mounted so as to cover the opening of the annular frame; An adhesive tape mounting step in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through-holes is mounted so as to cover the opening of the annular frame;
On the chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing device on the back surface of the wafer adhering region of the adhesive tape mounted on the annular frame A frame fixing step of mounting and fixing the annular frame by a clamp disposed on the chuck table; On the chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing device on the back surface of the wafer adhering region of the adhesive tape mounted on the annular frame A frame fixing step of mounting and fixing the annular frame by a clamp disposed on the chuck table;
The back surface corresponding to the device area of the wafer is placed on the front surface of the wafer attachment area of the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding area of the chuck table so that the adhesive tape Is sucked and held in the suction holding area, and the back surface corresponding to the device area of the wafer is sucked by applying a suction force to the wafer through the plurality of through-holes provided in the adhesive tape. Wafer sticking process to stick on the surface, The back surface corresponding to the device area of ​​the wafer is placed on the front surface of the wafer attachment area of ​​the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding area of ​​the chuck table so that the Adhesive tape Is sucked and held in the suction holding area, and the back surface corresponding to the device area of ​​the wafer is sucked by applying a suction force to the wafer through the plurality of through-holes provided in the adhesive tape. Wafer sticking process to stick on the surface,
A surplus area removing step of cutting and removing the surplus area of the wafer adhered to the surface of the adhesive tape sucked and held in the suction holding area of the chuck table by a processing means of the processing apparatus; A surplus area removing step of cutting and removing the surplus area of ​​the wafer adhered to the surface of the adhesive tape sucked and held in the suction holding area of ​​the chuck table by a processing means of the processing apparatus;
A dividing step of cutting along the street the processing device of the processing apparatus the wafer from which the surplus region has been removed by being attached to the surface of the adhesive tape sucked and held in the suction holding region of the chuck table. , A dividing step of cutting along the street the processing device of the processing apparatus the wafer from which the surplus region has been removed by being attached to the surface of the adhesive tape sucked and held in the suction holding region of the chuck table.,
A method for processing a wafer is provided. A method for processing a wafer is provided.

上記補強部形成工程は、ウエーハの裏面におけるデバイス領域に対応する領域を研削して円形状の凹部を形成する。 In the reinforcing portion forming step, a region corresponding to the device region on the back surface of the wafer is ground to form a circular recess.

本発明によれば、補強部形成工程を実施することによりウエーハの裏面におけるデバイス領域に対応する領域を除去して円形状の凹部を形成しデバイス領域の厚さを薄く形成しても、ウエーハは余剰領域に対応する領域を残存されて環状の補強部が形成され剛性が維持されているので、ウエーハの搬送等において破損することはなく、その取り扱いが容易となる。また、本発明によれば、複数の貫通細孔を備えた粘着テープを用いるので、特別なテープ貼着装置を用いることなく加工装置のチャックテーブルの吸引保持領域に吸引力を作用することにより、上記複数の貫通孔を通してウエーハを吸引して粘着テープの表面に貼着せしめることができる。更に、本願発明によれば、チャックテーブルの外径はウエーハの裏面におけるデバイス領域に対応する領域を除去して形成された円形状の凹部の内径より小さく設定されているので、ウエーハの裏面における余剰領域に対応する環状の補強部が粘着テープに貼着することはない。従って、余剰領域除去工程においてウエーハの余剰領域を加工装置の加工手段によって円滑に切断して除去することができる。 According to the present invention, even if the region corresponding to the device region on the back surface of the wafer is removed by forming the reinforcing portion forming step to form a circular recess and the thickness of the device region is reduced, Since the region corresponding to the surplus region is left and the annular reinforcing portion is formed and the rigidity is maintained, the wafer is not damaged during the conveyance of the wafer and the handling becomes easy. In addition, according to the present invention, since an adhesive tape having a plurality of through-holes is used, by applying a suction force to the suction holding region of the chuck table of the processing device without using a special tape sticking device, The wafer can be sucked through the plurality of through holes and attached to the surface of the adhesive tape. Further, according to the present invention, since the outer diameter of the chuck table is set smaller than the inner diameter of the circular recess formed by removing the region corresponding to the device region on the back surface of the wafer, the surplus on the back surface of the wafer An annular reinforcing portion corresponding to the region is not attached to the adhesive tape. Therefore, the excess area of the wafer can be smoothly cut and removed by the processing means of the processing apparatus in the excess area removing step.

以下、本発明によるウエーハの加工方法およびウエーハの加工方法に用いる粘着テープの好適な実施形態について、添付図面を参照して更に詳細に説明する。
図1には、本発明によるウエーハの加工方法によって加工されるウエーハとしての半導体ウエーハの斜視図が示されている。 FIG. 1 shows a perspective view of a semiconductor wafer as a wafer processed by the wafer processing method according to the present invention. 図1に示す半導体ウエーハ10は、例えば厚さが700μmのシリコンウエーハからなっており、表面10aに複数のストリート101が格子状に形成されているとともに、該複数のストリート101によって区画された複数の領域にIC、LSI等のデバイス102が形成されている。 The semiconductor wafer 10 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 700 μm, and a plurality of streets 101 are formed in a grid pattern on the surface 10a, and a plurality of streets 101 are partitioned by the plurality of streets 101. Devices 102 such as ICs and LSIs are formed in the area. このように構成された半導体ウエーハ10は、デバイス102が形成されているデバイス領域104と、該デバイス領域104を囲繞する余剰領域105を備えている。 The semiconductor wafer 10 configured in this way includes a device region 104 in which the device 102 is formed, and a surplus region 105 surrounding the device region 104. Preferred embodiments of a wafer processing method and an adhesive tape used for the wafer processing method according to the present invention will be described below in more detail with reference to the accompanying drawings. Preferred embodiments of a wafer processing method and an adhesive tape used for the wafer processing method according to the present invention will be described below in more detail with reference to the accompanying drawings.
FIG. 1 is a perspective view of a semiconductor wafer as a wafer processed by the wafer processing method according to the present invention. A semiconductor wafer 10 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 700 μm, and a plurality of streets 101 are formed in a lattice shape on the surface 10a, and a plurality of streets partitioned by the plurality of streets 101 are provided. A device 102 such as an IC or LSI is formed in the region. The semiconductor wafer 10 thus configured includes a device region 104 in which the device 102 is formed, and a surplus region 105 that surrounds the device region 104. FIG. 1 is a perspective view of a semiconductor wafer as a wafer processed by the wafer processing method according to the present invention. A semiconductor wafer 10 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 700 μm, and a plurality of streets 101 are formed in a lattice shape on the surface 10a, and a plurality of streets partitioned by the plurality of streets 101 are provided. A device 102 such as an IC or LSI is formed in the region. The semiconductor wafer 10 thus configured includes a device region 104 in which the device 102 is formed, and a surplus region 105 that surrounds the device region 104.

上記のように構成された半導体ウエーハ10の表面10aには、図2に示すように保護部材11を貼着する(保護部材貼着工程)。従って、半導体ウエーハ10の裏面10bが露出する形態となる。   As shown in FIG. 2, the protective member 11 is stuck on the surface 10a of the semiconductor wafer 10 configured as described above (protective member sticking step). Therefore, the back surface 10b of the semiconductor wafer 10 is exposed.

保護部材貼着工程を実施したならば、半導体ウエーハ10の裏面10bにおけるデバイス領域104に対応する領域を除去してデバイス領域104の厚さを所定厚さに形成するとともに、半導体ウエーハ10の裏面10bにおける余剰領域105に対応する領域を残存させて環状の補強部を形成する補強部形成工程を実施する。この補強部形成工程は、図示の実施形態においては図3(a)に示す研削装置12によって実施する。図3(a)に示す研削装置12は、被加工物を保持するチャックテーブル121と、該チャックテーブル121に保持された被加工物を研削する研削砥石122を備えた研削手段123を具備している。この研削装置12を用いて補強部形成工程を実施するには、チャックテーブル121上に半導体ウエーハ10の保護部材11を載置し、半導体ウエーハ10をチャックテーブル121上に吸引保持する。ここで、チャックテーブル121に保持された半導体ウエーハ10と研削砥石122の関係について説明する。チャックテーブル121の回転中心P1と研削砥石122の回転中心P2は偏芯しており、研削砥石122の直径は、半導体ウエーハ10の余剰領域105の内側とチャックテーブル121の回転中心P1(半導体ウエーハ10の中心)を通過する寸法に設定されている。半導体ウエーハ10をチャックテーブル121上に吸引保持したならば、チャックテーブル121を矢印121aで示す方向に300rpmで回転しつつ、研削手段123の研削砥石122を矢印122aで示す方向に6000rpmで回転せしめて半導体ウエーハ10の裏面に接触する。そして、研削手段123を所定の研削送り速度で下方に所定量研削送りする。この結果、半導体ウエーハ10の裏面には、図3の(b)に示すようにデバイス領域104に対応する領域が研削除去されて所定厚さ(例えば30μm)の円形状の凹部104bに形成されるとともに、余剰領域105に対応する領域が残存されて環状の補強部105bに形成される。なお、円形状の凹部104bは、後述する切削装置のチャックテーブルの直径より大きい内径に形成される。   When the protective member attaching step is performed, the region corresponding to the device region 104 on the back surface 10b of the semiconductor wafer 10 is removed to form the device region 104 with a predetermined thickness, and the back surface 10b of the semiconductor wafer 10 is formed. The reinforcement part formation process which leaves the area | region corresponding to the surplus area | region 105 in this, and forms a cyclic | annular reinforcement part is implemented. This reinforcing portion forming step is performed by the grinding apparatus 12 shown in FIG. 3A in the illustrated embodiment. A grinding apparatus 12 shown in FIG. 3A includes a grinding table 123 including a chuck table 121 that holds a workpiece and a grinding wheel 122 that grinds the workpiece held on the chuck table 121. Yes. In order to perform the reinforcing portion forming step using the grinding device 12, the protection member 11 of the semiconductor wafer 10 is placed on the chuck table 121, and the semiconductor wafer 10 is sucked and held on the chuck table 121. Here, the relationship between the semiconductor wafer 10 held on the chuck table 121 and the grinding wheel 122 will be described. The center of rotation P1 of the chuck table 121 and the center of rotation P2 of the grinding wheel 122 are eccentric, and the diameter of the grinding wheel 122 is the inside of the surplus area 105 of the semiconductor wafer 10 and the center of rotation P1 of the chuck table 121 (semiconductor wafer 10). The dimension is set to pass through the center. If the semiconductor wafer 10 is sucked and held on the chuck table 121, the grinding wheel 122 of the grinding means 123 is rotated at 6000 rpm in the direction indicated by the arrow 122a while the chuck table 121 is rotated at 300 rpm in the direction indicated by the arrow 121a. Contact the back surface of the semiconductor wafer 10. Then, the grinding means 123 is ground and fed downward by a predetermined amount at a predetermined grinding feed speed. As a result, on the back surface of the semiconductor wafer 10, as shown in FIG. 3B, a region corresponding to the device region 104 is ground and removed to form a circular recess 104b having a predetermined thickness (for example, 30 μm). At the same time, a region corresponding to the surplus region 105 remains and is formed in the annular reinforcing portion 105b. In addition, the circular recessed part 104b is formed in the internal diameter larger than the diameter of the chuck table of the cutting device mentioned later.

以上のようにして、補強部形成工程を実施することにより半導体ウエーハ10の裏面におけるデバイス領域104に対応する領域を除去してデバイス領域104の厚さを薄く形成しても、半導体ウエーハ10は余剰領域105に対応する領域を残存されて環状の補強部105bが形成され剛性が維持されているので、半導体ウエーハ10の搬送等において破損することはなく、その取り扱いが容易となる。   As described above, even if the region corresponding to the device region 104 on the back surface of the semiconductor wafer 10 is removed and the thickness of the device region 104 is reduced by carrying out the reinforcing portion forming step, the semiconductor wafer 10 remains excessive. Since the region corresponding to the region 105 is left and the annular reinforcing portion 105b is formed and the rigidity is maintained, the semiconductor wafer 10 is not damaged during the transportation of the semiconductor wafer 10, and the handling becomes easy.

次に、半導体ウエーハ10をストリート101に沿って切断する加工装置としての切削装置について、図4を参照して説明する。
図4に示された切削装置1は、静止基台2と、該静止基台2に加工送り方向である矢印Xで示す方向に移動可能に配設され被加工物を保持するチャックテーブル機構3と、静止基台2に割り出し送り方向である矢印Yで示す方向(加工送り方向である矢印Xで示す方向に直交する方向)に移動可能に配設されたスピンドル支持機構6と、該スピンドル支持機構6に切り込み送り方向である矢印Zで示す方向に移動可能に配設された切削手段(加工手段)としてのスピンドルユニット7が配設されている。 The cutting device 1 shown in FIG. 4 has a stationary base 2 and a chuck table mechanism 3 that is movably arranged on the stationary base 2 in the direction indicated by the arrow X, which is the machining feed direction, to hold the workpiece. The spindle support mechanism 6 is movably arranged on the stationary base 2 in the direction indicated by the arrow Y, which is the indexing feed direction (the direction orthogonal to the direction indicated by the arrow X, which is the machining feed direction), and the spindle support. A spindle unit 7 as a cutting means (machining means) is provided in the mechanism 6 so as to be movable in the direction indicated by the arrow Z, which is the cutting feed direction. Next, a cutting apparatus as a processing apparatus for cutting the semiconductor wafer 10 along the street 101 will be described with reference to FIG. Next, a cutting apparatus as a processing apparatus for cutting the semiconductor wafer 10 along the street 101 will be described with reference to FIG.
A cutting apparatus 1 shown in FIG. 4 includes a stationary base 2 and a chuck table mechanism 3 that is disposed on the stationary base 2 so as to be movable in a direction indicated by an arrow X that is a machining feed direction and holds a workpiece. A spindle support mechanism 6 disposed on the stationary base 2 so as to be movable in a direction indicated by an arrow Y that is an indexing feed direction (a direction perpendicular to a direction indicated by an arrow X that is a machining feed direction), and the spindle support A spindle unit 7 serving as a cutting means (processing means) is provided in the mechanism 6 so as to be movable in a direction indicated by an arrow Z that is a cutting feed direction. A cutting apparatus 1 shown in FIG. 4 includes a stationary base 2 and a chuck table mechanism 3 that is disposed on the stationary base 2 so as to be movable in a direction indicated by an arrow X that is a machining feed direction and holds a workpiece. A spindle support mechanism 6 disposed on the stationary base 2 so as to be movable in a direction indicated by an arrow Y that is an indexing feed direction (a direction perpendicular to a direction indicated by an arrow X that is a machining feed direction ), And the spindle support A spindle unit 7 serving as a cutting means (processing means) is provided in the mechanism 6 so as to be movable in a direction indicated by an arrow Z that is a cutting feed direction.

上記チャックテーブル機構3は、被加工物を吸引保持するチャックテーブル4と、該チャックテーブル4を支持し矢印Xで示す加工送り方向に移動せしめるチャックテーブル移動機構5とからなっている。チャックテーブル移動機構5は、静止基台2上に矢印Xで示す加工送り方向に沿って平行に配設された共通の一対の案内レール51、51と、該案内レール51、51上に矢印Xで示す加工送り方向に移動可能に配設されたチャックテーブル支持基台52と、該チャックテーブル支持基台52を一対の案内レール51、51に沿って移動せしめる加工送り手段53を具備している。   The chuck table mechanism 3 includes a chuck table 4 that sucks and holds a workpiece, and a chuck table moving mechanism 5 that supports the chuck table 4 and moves it in a processing feed direction indicated by an arrow X. The chuck table moving mechanism 5 includes a pair of common guide rails 51 and 51 arranged in parallel along the machining feed direction indicated by the arrow X on the stationary base 2, and the arrow X on the guide rails 51 and 51. A chuck table support base 52 movably disposed in the processing feed direction shown in FIG. 5 and a work feed means 53 for moving the chuck table support base 52 along a pair of guide rails 51, 51. .

上記チャックテーブル支持基台52は矩形状に形成され、その下面には上記一対の案内レール51、51と嵌合する被案内溝521、521が形成されている。この被案内溝521、521を一対の案内レール51、51に嵌合することにより、チャックテーブル支持基台52は一対の案内レール51、51に沿って移動可能に配設される。   The chuck table support base 52 is formed in a rectangular shape, and guided grooves 521 and 521 for fitting with the pair of guide rails 51 and 51 are formed on the lower surface thereof. By fitting the guided grooves 521 and 521 to the pair of guide rails 51 and 51, the chuck table support base 52 is disposed so as to be movable along the pair of guide rails 51 and 51.

上記加工送り手段53は、上記一対の案内レール51と51の間に平行に配設された雄ネジロッド531と、該雄ネジロッド531を回転駆動するためのサーボモータ532等の駆動源を含んでいる。雄ネジロッド531は、その一端が上記静止基台2に固定された軸受ブロック533に回転自在に支持されており、その他端が上記サーボモータ532の出力軸に連結されている。なお、雄ネジロッド531は、チャックテーブル支持基台52の中央部に形成された雌ネジ522に螺合されている。従って、サーボモータ532によって雄ネジロッド531を正転および逆転駆動することにより、チャックテーブル支持基台52は案内レール51、51に沿って矢印Xで示す加工送り方向に移動せしめられる。   The processing feed means 53 includes a male screw rod 531 disposed in parallel between the pair of guide rails 51 and 51, and a drive source such as a servo motor 532 for rotationally driving the male screw rod 531. . One end of the male screw rod 531 is rotatably supported by a bearing block 533 fixed to the stationary base 2, and the other end is connected to the output shaft of the servo motor 532. The male screw rod 531 is screwed into a female screw 522 formed at the center of the chuck table support base 52. Therefore, the chuck table support base 52 is moved along the guide rails 51 and 51 in the machining feed direction indicated by the arrow X by driving the male screw rod 531 forward and backward by the servo motor 532.

次に、上記チャックテーブル4について、図4および図5を参照して説明する。
図4および図5に示すチャックテーブル4は、チャックテーブル支持基台52の上面に配設された円筒状の支持筒体55に図5に示すように軸受56を介して回転可能に支持されている。 The chuck table 4 shown in FIGS. 4 and 5 is rotatably supported by a cylindrical support cylinder 55 arranged on the upper surface of the chuck table support base 52 via a bearing 56 as shown in FIG. There is. チャックテーブル4は、図5に示すように円柱状の本体41と、該本体41の上面に配設されポーラスなセラミックス等の多孔性部材によって形成された吸着チャック42とからなっている。 As shown in FIG. 5, the chuck table 4 includes a columnar main body 41 and a suction chuck 42 formed on a porous member such as porous ceramics arranged on the upper surface of the main body 41. 本体41はステンレス鋼等の金属材によって形成されており、その上面には円形の嵌合凹部411が設けられている。 The main body 41 is made of a metal material such as stainless steel, and a circular fitting recess 411 is provided on the upper surface thereof. この嵌合凹部411には、底面の外周部に吸着チャック42が載置される環状の載置棚412が設けられている。 The fitting recess 411 is provided with an annular mounting shelf 412 on which the suction chuck 42 is mounted on the outer peripheral portion of the bottom surface. また、本体41には嵌合凹部411に開口する吸引通路413が設けられており、この吸引通路413は図示しない吸引手段に連通されている。 Further, the main body 41 is provided with a suction passage 413 that opens into the fitting recess 411, and the suction passage 413 is communicated with a suction means (not shown). 従って、図示しない吸引手段が作動すると、吸引通路413を通して嵌合凹部411に負圧が作用せしめられる。 Therefore, when the suction means (not shown) is activated, a negative pressure is applied to the fitting recess 411 through the suction passage 413. このように構成されたチャックテーブル4は、図示しない回転駆動手段によって適宜回動せしめられるように構成されている。 The chuck table 4 configured in this way is configured to be appropriately rotated by a rotation driving means (not shown). なお、チャックテーブル4の本体41の上端外周縁は、面取り414が施されている。 The outer peripheral edge of the upper end of the main body 41 of the chuck table 4 is chamfered 414. Next, the chuck table 4 will be described with reference to FIGS. Next, the chuck table 4 will be described with reference to FIGS.
The chuck table 4 shown in FIGS. 4 and 5 is rotatably supported by a cylindrical support cylinder 55 disposed on the upper surface of the chuck table support base 52 via a bearing 56 as shown in FIG. Yes. As shown in FIG. 5, the chuck table 4 includes a columnar main body 41 and an adsorption chuck 42 formed on a top surface of the main body 41 and formed by a porous member such as porous ceramics. The main body 41 is formed of a metal material such as stainless steel, and a circular fitting recess 411 is provided on the upper surface thereof. The fitting recess 411 is provided with an annular mounting shelf 412 on which the suction chuck 42 is mounted on the outer periphery of the bottom surface. The main body 41 is provided with a suction passage 413 that opens into the fitting recess 411, and the suction passage 413 communicates with a suction means (not shown). Accordingly, when a suction means (not shown) is operated, a negative pressure is applied to the fitting recess 411 throug The chuck table 4 shown in FIGS. 4 and 5 is rotatably supported by a cylindrical support cylinder 55 disposed on the upper surface of the chuck table support base 52 via a bearing 56 as shown in FIG. Yes. As shown in FIG. 5, the chuck table 4 includes a columnar main body 41 and an adsorption chuck 42 formed on a top surface of the main body 41 and formed by a porous member such as porous ceramics. The main body 41 is formed of a metal material such as stainless steel , and a circular fitting recess 411 is provided on the upper surface thereof. The fitting recess 411 is provided with an annular mounting shelf 412 on which the suction chuck 42 is mounted on the outer ceramic of the bottom surface. The main body 41 is provided. with a suction passage 413 that opens into the fitting recess 411, and the suction passage 413 communicates with a suction means (not shown). Accordingly, when a suction means (not shown) is operated, a negative pressure is applied to the fitting recess. 411 throug h the suction passage 413. The chuck table 4 configured in this way is configured to be appropriately rotated by a rotation driving means (not shown). Note that a chamfer 414 is provided on the outer periphery of the upper end of the main body 41 of the chuck table 4. h the suction passage 413. The chuck table 4 configured in this way is configured to be appropriately rotated by a rotation driving means (not shown). Note that a chamfer 414 is provided on the outer peripheral of the upper end of the main body 41 of the chuck table 4.

上記チャックテーブル4を構成する本体41の上部には、環状の溝415が形成されている。この環状の溝415内には4個(図4参照)のクランプ43の基部が配設され、このクランプ43の基部が本体41に適宜の固定手段によって取付けられている。また、支持筒体55の上端には、支持テーブル57が配設されている。   An annular groove 415 is formed in the upper part of the main body 41 constituting the chuck table 4. Four bases (see FIG. 4) of clamps 43 are disposed in the annular groove 415, and the bases of the clamps 43 are attached to the main body 41 by appropriate fixing means. A support table 57 is disposed on the upper end of the support cylinder 55.

図4を参照して説明を続けると、上記スピンドル支持機構6は、静止基台2上に矢印Yで示す割り出し送り方向に沿って平行に配設された一対の案内レール61、61と、該案内レール61、61上に矢印Yで示す方向に移動可能に配設された可動支持基台62を具備している。この可動支持基台62は、案内レール61、61上に移動可能に配設された移動支持部621と、該移動支持部621に取り付けられた装着部622とからなっている。移動支持部621の下面には案内レール61、61と嵌合する一対の被案内溝621a、621aが形成されており、この被案内溝621a、621aを案内レール61、61に嵌合することにより、可動支持基台62は案内レール61、61に沿って移動可能に構成される。また、装着部622は、一側面に矢印Zで示す方向に延びる一対の案内レール622a、622aが平行に設けられている。   4, the spindle support mechanism 6 includes a pair of guide rails 61, 61 disposed on the stationary base 2 in parallel along the indexing feed direction indicated by the arrow Y, A movable support base 62 is provided on the guide rails 61 and 61 so as to be movable in the direction indicated by the arrow Y. The movable support base 62 includes a movement support portion 621 that is movably disposed on the guide rails 61, 61, and a mounting portion 622 that is attached to the movement support portion 621. A pair of guided grooves 621 a and 621 a that are fitted to the guide rails 61 and 61 are formed on the lower surface of the moving support portion 621. By fitting the guided grooves 621 a and 621 a to the guide rails 61 and 61, The movable support base 62 is configured to be movable along the guide rails 61 and 61. The mounting portion 622 is provided with a pair of guide rails 622a and 622a extending in the direction indicated by the arrow Z on one side surface in parallel.

図示の実施形態におけるスピンドル支持機構6は、可動支持基台62を一対の案内レール61、61に沿って矢印Yで示す割り出し送り方向に移動させるための割り出し送り手段63を具備している。割り出し送り手段63は、上記一対の案内レール61、61の間に平行に配設された雄ネジロッド631と、該雄ねじロッド631を回転駆動するためのパルスモータ632等の駆動源を含んでいる。雄ネジロッド631は、その一端が上記静止基台2に固定された図示しない軸受ブロックに回転自在に支持されており、その他端が上記パルスモータ632の出力軸に連結されている。なお、雄ネジロッド631は、可動支持基台62を構成する移動支持部621の中央部下面に突出して設けられた図示しない雌ネジブロックに形成された雌ネジ穴に螺合されている。このため、パルスモータ632によって雄ネジロッド631を正転および逆転駆動することにより、可動支持基台62は案内レール61、61に沿って矢印Yで示す割り出し送り方向に移動せしめられる。   The spindle support mechanism 6 in the illustrated embodiment includes index feed means 63 for moving the movable support base 62 along the pair of guide rails 61 and 61 in the index feed direction indicated by the arrow Y. The index feeding means 63 includes a male screw rod 631 disposed in parallel between the pair of guide rails 61, 61, and a drive source such as a pulse motor 632 for rotationally driving the male screw rod 631. One end of the male screw rod 631 is rotatably supported by a bearing block (not shown) fixed to the stationary base 2, and the other end is connected to the output shaft of the pulse motor 632. The male screw rod 631 is screwed into a female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the moving support portion 621 constituting the movable support base 62. Therefore, when the male screw rod 631 is driven to rotate forward and reversely by the pulse motor 632, the movable support base 62 is moved along the guide rails 61 and 61 in the index feed direction indicated by the arrow Y.

図示の実施形態のおけるスピンドルユニット7は、ユニットホルダ71と、該ユニットホルダ71に取り付けられたスピンドルハウジング72と、該スピンドルハウジング72に回転可能に支持された回転スピンドル73を具備している。ユニットホルダ71は、上記装着部622に設けられた一対の案内レール622a、622aに摺動可能に嵌合する一対の被案内溝71a、71aが設けられており、この被案内溝71a、71aを上記案内レール622a、622aに嵌合することにより、矢印Zで示す切り込み送り方向に移動可能に支持される。上記回転スピンドル73はスピンドルハウジング72の先端から突出して配設されており、この回転スピンドル73の先端部に切削ブレード74が装着されている。切削ブレード74を装着した回転スピンドル73は、サーボモータ75等の駆動源によって回転駆動せしめられる。なお、切削ブレード74の両側には、切削ブレード74による切削部に切削水を供給する切削水供給ノズル76が配設されている。上記スピンドルハウジング72の先端部には、上記チャックテーブル4上に保持された被加工物を撮像し、上記切削ブレード74によって切削すべき領域を検出するための撮像手段77を具備している。この撮像手段77は、顕微鏡やCCDカメラ等の光学手段からなっており、撮像した画像信号を図示しない制御手段に送る。   The spindle unit 7 in the illustrated embodiment includes a unit holder 71, a spindle housing 72 attached to the unit holder 71, and a rotating spindle 73 that is rotatably supported by the spindle housing 72. The unit holder 71 is provided with a pair of guided grooves 71a and 71a slidably fitted to a pair of guide rails 622a and 622a provided in the mounting portion 622. The guided grooves 71a and 71a By being fitted to the guide rails 622a and 622a, the guide rails 622a and 622a are supported so as to be movable in the infeed direction indicated by the arrow Z. The rotary spindle 73 is disposed so as to protrude from the tip of the spindle housing 72, and a cutting blade 74 is attached to the tip of the rotary spindle 73. The rotary spindle 73 to which the cutting blade 74 is attached is driven to rotate by a drive source such as a servo motor 75. A cutting water supply nozzle 76 that supplies cutting water to a cutting portion by the cutting blade 74 is disposed on both sides of the cutting blade 74. An image pickup means 77 for picking up an image of the work piece held on the chuck table 4 and detecting a region to be cut by the cutting blade 74 is provided at the tip of the spindle housing 72. The imaging means 77 is composed of optical means such as a microscope and a CCD camera, and sends the captured image signal to a control means (not shown).

図示の実施形態におけるスピンドルユニット7は、ホルダ71を一対の案内レール622a、622aに沿って矢印Zで示す方向に移動させるための切込み送り手段78を具備している。切込み送り手段78は、上記加工送り手段53および割り出し送り手段63と同様に案内レール622a、622a の間に配設された雄ネジロッド(図示せず)と、該雄ネジロッドを回転駆動するためのパルスモータ782等の駆動源を含んでおり、パルスモータ782によって図示しない雄ネジロッドを正転および逆転駆動することにより、ユニットホルダ71とスピンドルハウジング72および回転スピンドル73を案内レール622a、622a に沿って矢印Zで示す切り込み送り方向に移動せしめる。   The spindle unit 7 in the illustrated embodiment includes a cutting feed means 78 for moving the holder 71 along the pair of guide rails 622a and 622a in the direction indicated by the arrow Z. The cutting feed means 78 includes a male screw rod (not shown) disposed between the guide rails 622a and 622a and a pulse for rotationally driving the male screw rod, similarly to the processing feed means 53 and the index feed means 63. A drive source such as a motor 782 is included, and a male screw rod (not shown) is driven to rotate forward and backward by a pulse motor 782, whereby the unit holder 71, the spindle housing 72, and the rotary spindle 73 are moved along the guide rails 622a and 622a with arrows. Move in the infeed direction indicated by Z.

図示の実施形態における切削装置1は以上のように構成されており、以下、切削装置1を用いて上記半導体ウエーハ10をストリート101に沿って切断する加工方法について説明する。
先ず、表面に粘着層が形成さているとともに複数の貫通細孔を備えた粘着テープの外周部表面を環状のフレームの開口部を覆うように装着する粘着テープ装着工程を実施する。 First, an adhesive tape attachment step is carried out in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through pores is attached so as to cover the opening of the annular frame. 即ち、図6の(a)に示すように粘着テープ13の外周部130の表面を環状のフレーム14の開口部を覆うように装着する。 That is, as shown in FIG. 6A, the surface of the outer peripheral portion 130 of the adhesive tape 13 is attached so as to cover the opening of the annular frame 14. 粘着テープ13は、図6の(b)に示すようにポリオレフィンまたは塩化ビニール等の合成樹脂シート131の表面131aに粘着層132が形成されているとともに、レーザー加工等によって合成樹脂シート131および粘着層132を貫通する複数の貫通細孔133が設けられている。 As shown in FIG. 6B, the adhesive tape 13 has an adhesive layer 132 formed on the surface 131a of the synthetic resin sheet 131 made of polyolefin or vinyl chloride, and the synthetic resin sheet 131 and the adhesive layer are formed by laser processing or the like. A plurality of penetrating pores 133 penetrating 132 are provided. The cutting apparatus 1 in the illustrated embodiment is configured as described above. Hereinafter, a processing method for cutting the semiconductor wafer 10 along the street 101 using the cutting apparatus 1 will be described. The cutting apparatus 1 in the illustrated embodiment is configured as described above. Inching, a processing method for cutting the semiconductor wafer 10 along the street 101 using the cutting apparatus 1 will be described.
First, an adhesive tape mounting process is performed in which an adhesive layer is formed on the surface and an outer peripheral surface of an adhesive tape having a plurality of through-holes is mounted so as to cover an opening of an annular frame. That is, as shown in FIG. 6A, the surface of the outer peripheral portion 130 of the adhesive tape 13 is mounted so as to cover the opening of the annular frame 14. As shown in FIG. 6B, the adhesive tape 13 has an adhesive layer 132 formed on the surface 131a of a synthetic resin sheet 131 such as polyolefin or vinyl chloride, and the synthetic resin sheet 131 and the adhesive layer by laser processing or the like. A plurality of through-holes 133 penetrating 132 are provided. First, an adhesive tape mounting process is performed in which an adhesive layer is formed on the surface and an outer peripheral surface of an adhesive tape having a plurality of through-holes is mounted so as to cover an opening of an annular frame. That is 6A, the surface of the outer peripheral portion 130 of the adhesive tape 13 is mounted so as to cover the opening of the annular frame 14. As shown in FIG. 6B, the adhesive tape 13 has an adhesive layer 132 formed on the surface 131a of a synthetic resin sheet 131 such as easily or vinyl chloride, and the synthetic resin sheet 131 and the adhesive layer by laser processing or the like. A plurality of through-holes 133 penetrating 132 are provided.

次に、図7に示すように環状のフレーム14に装着された粘着テープ13におけるウエーハ貼着領域135の裏面135bをチャックテーブル4の吸着チャック42上に載置するとともに、環状のフレーム14をクランプ43によって固定するフレーム固定工程を実施する。   Next, as shown in FIG. 7, the back surface 135b of the wafer attaching region 135 of the adhesive tape 13 attached to the annular frame 14 is placed on the suction chuck 42 of the chuck table 4, and the annular frame 14 is clamped. A frame fixing step of fixing by 43 is performed.

上述したフレーム固定工程を実施したならば、図8の(a)に示すようにチャックテーブル4に載置された粘着テープ13におけるウエーハ貼着領域135の表面135aに半導体ウエーハ10のデバイス領域104に対応する裏面を載置し、チャックテーブル4の吸引保持領域に吸引力を作用して粘着テープ13を吸引保持領域に吸引保持するとともに、半導体ウエーハ10を吸引して粘着テープ13の表面に貼着せしめるウエーハ貼着工程を実施する。即ち、チャックテーブル4の吸引保持領域である吸着チャック42上に載置された粘着テープ13におけるウエーハ貼着領域135の表面135aに半導体ウエーハ10のデバイス領域104に対応する裏面を載置する。従って、半導体ウエーハ10は、表面10aが上側となる。このとき、半導体ウエーハ10の裏面10bにおけるデバイス領域104に対応する領域が研削除去されて形成された円形状の凹部104bは、その内径がチャックテーブル4の外径より大きく形成されているので、余剰領域105に対応する環状の補強部105bが粘着テープ13に載置されることはない。また、チャックテーブル4の本体41の上端外周縁には面取り414が施されているので、チャックテーブル4の本体41の上端外周縁と半導体ウエーハ10の環状の補強部105bとの間に粘着テープ13が挟持されることはない。そして、図示しない吸引手段を作動すると、吸引通路413を通して嵌合凹部411に負圧が作用せしめられ、この結果、多孔性部材によって形成された吸着チャック42の上面(吸引保持領域)に吸引力が作用して、粘着テープ13を吸引保持領域に吸引保持するとともに、図8の(b)に示すように粘着テープ13に設けられた複数の貫通細孔133を通して負圧が半導体ウエーハ10の裏面10bに作用するため半導体ウエーハ10が吸引され粘着テープ13の粘着層132に貼着される。このように、粘着テープ13を用いることにより、特別なテープ貼着装置を用いることなく粘着テープ13の表面に半導体ウエーハ10を吸引して貼着せしめることができる。   When the frame fixing step described above is performed, the device region 104 of the semiconductor wafer 10 is applied to the surface 135a of the wafer attachment region 135 of the adhesive tape 13 placed on the chuck table 4 as shown in FIG. The corresponding back surface is placed, and suction force is applied to the suction holding area of the chuck table 4 to suck and hold the adhesive tape 13 to the suction holding area, and the semiconductor wafer 10 is sucked and adhered to the surface of the adhesive tape 13. A wafer attaching process is performed. That is, the back surface corresponding to the device region 104 of the semiconductor wafer 10 is placed on the front surface 135a of the wafer attaching region 135 of the adhesive tape 13 placed on the suction chuck 42, which is the suction holding region of the chuck table 4. Accordingly, the surface 10a of the semiconductor wafer 10 is on the upper side. At this time, the circular concave portion 104b formed by grinding and removing the region corresponding to the device region 104 on the back surface 10b of the semiconductor wafer 10 has an inner diameter larger than the outer diameter of the chuck table 4, and therefore, an excess. The annular reinforcing portion 105 b corresponding to the region 105 is not placed on the adhesive tape 13. Further, since the upper peripheral edge of the upper end of the main body 41 of the chuck table 4 is chamfered 414, the adhesive tape 13 is provided between the outer peripheral edge of the upper end of the main body 41 of the chuck table 4 and the annular reinforcing portion 105 b of the semiconductor wafer 10. Is never pinched. When a suction means (not shown) is operated, a negative pressure is applied to the fitting recess 411 through the suction passage 413. As a result, a suction force is applied to the upper surface (suction holding region) of the suction chuck 42 formed by the porous member. By acting, the adhesive tape 13 is sucked and held in the suction holding region, and a negative pressure is applied through the plurality of through-holes 133 provided in the adhesive tape 13 as shown in FIG. The semiconductor wafer 10 is sucked and adhered to the adhesive layer 132 of the adhesive tape 13. Thus, by using the adhesive tape 13, the semiconductor wafer 10 can be sucked and attached to the surface of the adhesive tape 13 without using a special tape attaching device.

上述したウエーハ貼着工程を実施したならば、図9に示すように半導体ウエーハ10の表面10(a)に貼着されている保護部材11を剥離する(保護部材剥離工程)。   If the wafer sticking process mentioned above is implemented, as shown in FIG. 9, the protective member 11 stuck to the surface 10 (a) of the semiconductor wafer 10 will be peeled (protective member peeling process).

上述したウエーハ貼着工程および保護部材剥離工程を実施したならば、チャックテーブル4の吸引保持領域に吸引保持された粘着テープ13の表面に貼着せしめられている半導体ウエーハ10の余剰領域105を切断し除去する余剰領域除去工程を実施する。即ち、加工送り手段53を作動して、図10(a)に示すようにチャックテーブル4に保持された半導体ウエーハ10のデバイス領域104と余剰領域105との境界部を切削ブレード74の直下に位置ける。そして、チャックテーブル4を矢印で示す方向に回転するとともに、切削ブレード74を回転しつつ矢印Z1で示す方向に切削送りする。この結果、図10(b)に示すように半導体ウエーハ10は、デバイス領域104と余剰領域105との境界部で切断され、余剰領域105が除去される。   If the wafer sticking step and the protective member peeling step described above are performed, the surplus region 105 of the semiconductor wafer 10 stuck to the surface of the adhesive tape 13 sucked and held in the suction holding region of the chuck table 4 is cut. Then, a surplus area removing step to be removed is performed. That is, by operating the machining feed means 53, the boundary between the device region 104 and the surplus region 105 of the semiconductor wafer 10 held on the chuck table 4 is positioned immediately below the cutting blade 74 as shown in FIG. I will. Then, the chuck table 4 is rotated in the direction indicated by the arrow, and the cutting blade 74 is rotated and fed in the direction indicated by the arrow Z1. As a result, as shown in FIG. 10B, the semiconductor wafer 10 is cut at the boundary between the device region 104 and the surplus region 105, and the surplus region 105 is removed.


上述した余剰領域除去工程を実施したならば、加工送り手段53を作動してチャックテーブル4を撮像手段77の直下まで移動せしめる。 After the above-mentioned excess region removing step is performed, the machining feed means 53 is operated to move the chuck table 4 to just below the image pickup means 77. チャックテーブル4が撮像手段77の直下に位置付けられると、撮像手段77および図示しない制御手段によって半導体ウエーハ10の切削加工すべき加工領域を検出するアライメント作業を実行する。 When the chuck table 4 is positioned directly under the image pickup means 77, the image pickup means 77 and a control means (not shown) execute an alignment operation for detecting a machining area of ​​the semiconductor wafer 10 to be machined. 即ち、撮像手段77および図示しない制御手段は、半導体ウエーハ10の所定方向に形成されているストリート101と、ストリート101に沿って切削する切削ブレード74との位置合わせを行うためのパターンマッチング等の画像処理を実行し、切削加工すべき加工領域のアライメントを遂行する。 That is, the imaging means 77 and the control means (not shown) are images such as pattern matching for aligning the street 101 formed in the predetermined direction of the semiconductor wafer 10 with the cutting blade 74 to be cut along the street 101. Perform the process and align the machining area to be machined. また、半導体ウエーハ10に形成されている上記所定方向に対して直交する方向に延びるストリート101に対しても、同様に切削加工すべき加工領域のアライメントが遂行される。 Further, the alignment of the processing region to be cut is similarly performed on the street 101 formed on the semiconductor wafer 10 extending in the direction orthogonal to the predetermined direction. , ,
If the above-described surplus area removing step is performed, the machining feed means 53 is operated to move the chuck table 4 to a position immediately below the imaging means 77. When the chuck table 4 is positioned immediately below the image pickup means 77, an alignment operation for detecting a processing region to be cut of the semiconductor wafer 10 is executed by the image pickup means 77 and a control means (not shown). That is, the imaging unit 77 and the control unit (not shown) are images such as pattern matching for aligning the street 101 formed in a predetermined direction of the semiconductor wafer 10 with the cutting blade 74 that cuts along the street 101. Execute the process and perform alignment of the machining area to be cut. In addition, the alignment of the machining area to be cut is similarly performed on the street 101 formed in the semiconductor wafer 10 and extending in a direction orthogonal to the predetermined direction. If the above-described surplus area removing step is performed, the machining feed means 53 is operated to move the chuck table 4 to a position immediately below the imaging means 77. When the chuck table 4 is positioned immediately below the image pickup means 77, an alignment operation for detecting a processing region to be cut of the semiconductor wafer 10 is executed by the image pickup means 77 and a control means (not shown). That is, the imaging unit 77 and the control unit (not shown) are images Execute the process and perform alignment of the machining area to be cut. In addition, the alignment such as pattern matching for aligning the street 101 formed in a predetermined direction of the semiconductor wafer 10 with the cutting blade 74 that cuts along the street 101. of the machining area to be cut is similarly performed on the street 101 formed in the semiconductor wafer 10 and extending in a direction orthogonal to the predetermined direction.

上述したように、半導体ウエーハ10の切削加工すべき加工領域を検出するアライメント作業を実行したならば、チャックテーブル4の吸引保持領域に吸引保持された粘着テープ11の粘着層112に貼着せしめられている半導体ウエーハ10をストリート101に沿って切断する分割工程を実施する。即ち、チャックテーブル4を切削領域に移動し、図11に示すように所定のストリート101の一端を切削ブレード74の直下より図11において僅かに右側に位置付ける。そして、切削ブレード74を回転しつつ切削ブレード74を矢印Z1で示す方向に所定量切り込み送りし、上記加工送り手段53を作動してチャックテーブル4を図11において矢印X1で示す方向に所定の切削送り速度で移動する。なお、上記切り込み送り量は、半導体ウエーハ10の裏面10b(下面)に達する位置に設定されている。そして、チャックテーブル4に保持された半導体ウエーハ10の所定のストリート101の他端が図11に示すように切削ブレード74の直下より僅かに左側に達したら、チャックテーブル4の移動を停止するとともに、切削ブレード74を矢印Z2で示す方向に後退せしめる。この結果、半導体ウエーハ10は、所定のストリート101に沿って切断される。   As described above, when the alignment operation for detecting the processing area to be cut of the semiconductor wafer 10 is executed, the semiconductor wafer 10 is adhered to the adhesive layer 112 of the adhesive tape 11 sucked and held in the suction holding area of the chuck table 4. A dividing step of cutting the semiconductor wafer 10 being cut along the street 101 is performed. That is, the chuck table 4 is moved to the cutting region, and one end of the predetermined street 101 is positioned slightly to the right in FIG. 11 from directly below the cutting blade 74 as shown in FIG. Then, while rotating the cutting blade 74, the cutting blade 74 is cut and fed by a predetermined amount in the direction indicated by the arrow Z1, and the machining feed means 53 is operated to move the chuck table 4 in the direction indicated by the arrow X1 in FIG. Move at the feed rate. The cut feed amount is set at a position reaching the back surface 10b (bottom surface) of the semiconductor wafer 10. Then, when the other end of the predetermined street 101 of the semiconductor wafer 10 held on the chuck table 4 reaches the left side slightly below the cutting blade 74 as shown in FIG. 11, the movement of the chuck table 4 is stopped, The cutting blade 74 is retracted in the direction indicated by the arrow Z2. As a result, the semiconductor wafer 10 is cut along a predetermined street 101.

上述した分割工程を半導体ウエーハ10に所定方向に形成された全てのストリート101に沿って実施したならば、チャックテーブル4を90度回動する。そして、半導体ウエーハ10に上記所定方向と直交する方向に形成された全てのストリート101に沿って上述した分割工程を実施する。この結果、半導体ウエーハ10には、全てのストリート101に沿って切断される。このように、半導体ウエーハ10の全てのストリート101に沿って切断することにより、半導体ウエーハ10は各デバイス毎の半導体チップに分割される。なお、個々に分割された半導体チップは環状のフレーム14に装着された粘着テープ11に貼着されているので、バラバラにはならずウエーハの形態が維持されている。このようにして分割された個々の半導体チップは、環状のフレーム14に装着された粘着テープ11に貼着された状態で次工程に搬送される。   If the above-described dividing step is performed along all the streets 101 formed in the semiconductor wafer 10 in a predetermined direction, the chuck table 4 is rotated 90 degrees. Then, the above-described dividing step is performed along all the streets 101 formed on the semiconductor wafer 10 in a direction orthogonal to the predetermined direction. As a result, the semiconductor wafer 10 is cut along all the streets 101. Thus, by cutting along all the streets 101 of the semiconductor wafer 10, the semiconductor wafer 10 is divided into semiconductor chips for each device. In addition, since the semiconductor chip divided | segmented separately is affixed on the adhesive tape 11 with which the cyclic | annular flame | frame 14 was mounted | worn, it does not fall apart but the form of a wafer is maintained. The individual semiconductor chips thus divided are transported to the next process in a state where they are adhered to the adhesive tape 11 attached to the annular frame 14.

以上、本発明を図示の実施形態に基づいて説明したが、本発明は実施形態のみに限定されるものではなく、本発明の趣旨の範囲で種々の変形は可能である。例えば、上述した実施形態においては余剰領域除去工程および分割工程を切削加工によって実施した例を示したが、余剰領域除去工程および分割工程はレーザー加工によって実施してもよい。   Although the present invention has been described based on the illustrated embodiment, the present invention is not limited to the embodiment, and various modifications are possible within the scope of the gist of the present invention. For example, in the above-described embodiment, an example in which the surplus area removing process and the dividing process are performed by cutting is shown, but the surplus area removing process and the dividing process may be performed by laser processing.

本発明によるウエーハの加工方法によって加工される半導体ウエーハの斜視図The perspective view of the semiconductor wafer processed by the processing method of the wafer by this invention 図1に示す半導体ウエーハの表面に保護部材を貼着した状態を示す斜視図。 The perspective view which shows the state which affixed the protection member on the surface of the semiconductor wafer shown in FIG. 本発明によるウエーハの加工方法における補強部形成工程の説明図。 Explanatory drawing of the reinforcement part formation process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法を実施する切削装置の斜視図。 The perspective view of the cutting device which enforces the processing method of the wafer by the present invention. 図4に示す切削装置に装備されるチャックテーブルの要部断面図。 FIG. 5 is a cross-sectional view of a main part of a chuck table equipped in the cutting apparatus shown in FIG. 4. 本発明によるウエーハの加工方法における粘着テープ装着工程の説明図。 Explanatory drawing of the adhesive tape mounting process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法におけるフレーム固定工程の説明図。 Explanatory drawing of the frame fixing process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法におけるウエーハ貼着工程の説明図。 Explanatory drawing of the wafer sticking process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法における保護部材剥離工程の説明図。 Explanatory drawing of the protection member peeling process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法における余剰領域除去工程の説明図。 Explanatory drawing of the excess area | region removal process in the processing method of the wafer by this invention. 本発明によるウエーハの加工方法における分割工程の説明図。 Explanatory drawing of the division | segmentation process in the processing method of the wafer by this invention.

符号の説明Explanation of symbols

1:切削装置
2:静止基台
3:チャックテーブル機構
4:チャックテーブル
41:チャックテーブルの本体
42:吸着チャック
43:クランプ
5:チャックテーブル移動機構
53:加工送り手段
6:スピンドル支持機構
63:割り出し送り手段
7:スピンドルユニット
72:スピンドルハウジング
73:回転スピンドル
74:切削ブレード
77:撮像手段
78:切込み送り手段
10:半導体ウエーハ
101:ストリート
102;デバイス
11:保護部材
12:研削装置
13:着テープ
131:合成樹脂シート
132:粘着層
133:貫通細孔
14:環状のフレーム
1: Cutting device 2: Stationary base 3: Chuck table mechanism 4: Chuck table 41: Chuck table main body 42: Suction chuck 43: Clamp 5: Chuck table moving mechanism 53: Work feed means 6: Spindle support mechanism 63: Indexing Feeding means 7: Spindle unit 72: Spindle housing 73: Rotating spindle 74: Cutting blade 77: Imaging means 78: Cutting feed means 10: Semiconductor wafer 101: Street 102; Device 11: Protection member 12: Grinding device 13: Adhering tape 131 : Synthetic resin sheet 132: Adhesive layer 133: Through pore 14: Annular frame

Claims (2)

  1. 表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する余剰領域とを備えたウエーハの加工方法であって、
    ウエーハの裏面における該デバイス領域に対応する領域を除去して円形状の凹部を形成し該デバイス領域の厚さを所定厚さに形成するとともに、ウエーハの裏面における該余剰領域に対応する領域を残存させて環状の補強部を形成する補強部形成工程と、
    表面に粘着層が形成さているとともに複数の貫通細孔を備えた粘着テープの外周部表面を環状のフレームの開口部を覆うように装着する粘着テープ装着工程と、
    該環状のフレームに装着された該粘着テープにおけるウエーハ貼着領域の裏面を加工装置の被加工物を吸引保持するための該円形状の凹部の内径より小さい外径に形成されたチャックテーブル上に載置するとともに、該環状のフレームを該チャックテーブルに配設されたクランプによって固定するフレーム固定工程と、 The back surface of the wafer attachment region of the adhesive tape mounted on the annular frame is placed on a chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing apparatus. A frame fixing step of mounting and fixing the annular frame with a clamp arranged on the chuck table.
    該チャックテーブルに載置された該粘着テープにおけるウエーハ貼着領域の表面にウエーハの該デバイス領域に対応する裏面を載置し、該チャックテーブルの吸引保持領域に吸引力を作用して該粘着テープを吸引保持領域に吸引保持するとともに、該粘着テープに設けられた該複数の貫通細孔を通してウエーハに吸引力を作用せしめることによりウエーハの該デバイス領域に対応する裏面を吸引して該粘着テープの表面に貼着せしめるウエーハ貼着工程と、 The back surface of the waiha corresponding to the device region is placed on the front surface of the waiha attachment region of the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding region of the chuck table to act on the adhesive tape. Is sucked and held in the suction holding region, and the back surface of the adhesive tape corresponding to the device region is sucked by applying a suction force to the wai through the plurality of through pores provided in the adhesive tape. The waiha sticking process to stick to the surface and
    該チャックテーブルの吸引保持領域に吸引保持された該粘着テープの表面に貼着されているウエーハの該余剰領域を該加工装置の加工手段によって切断し除去する余剰領域除去工程と、 A step of removing the surplus region by cutting and removing the surplus region of the wafer attached to the surface of the adhesive tape sucked and held by the suction holding region of the chuck table by the processing means of the processing apparatus.
    該チャックテーブルの吸引保持領域に吸引保持された該粘着テープの表面に貼着せしめられ該余剰領域が除去されたウエーハを該加工装置の加工手段によってストリートに沿って切断する分割工程と、を含む、 The wafer which is attached to the surface of the adhesive tape which is suction-held by the suction holding region of the chuck table and the excess region is removed is cut along the street by the processing means of the processing apparatus. ,
    ことを特徴とするウエーハの加工方法。 A wafer processing method characterized by this. A wafer having a device region in which a plurality of streets are formed in a lattice shape on the surface and a plurality of devices are formed in a plurality of regions partitioned by the plurality of streets, and a surplus region surrounding the device region A processing method, A wafer having a device region in which a plurality of streets are formed in a lattice shape on the surface and a plurality of devices are formed in a plurality of regions partitioned by the plurality of streets, and a surplus region surrounding the device region A processing method,
    A region corresponding to the device region on the back surface of the wafer is removed to form a circular recess to form the thickness of the device region to a predetermined thickness, and a region corresponding to the surplus region on the back surface of the wafer remains. A reinforcing portion forming step for forming an annular reinforcing portion; A region corresponding to the device region on the back surface of the wafer is removed to form a circular recess to form the thickness of the device region to a predetermined thickness, and a region corresponding to the surplus region on the back surface of the wafer remains . A reinforcing portion forming step for forming an annular reinforcing portion;
    An adhesive tape mounting step in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through-holes is mounted so as to cover the opening of the annular frame; An adhesive tape mounting step in which an adhesive layer is formed on the surface and the outer peripheral surface of the adhesive tape having a plurality of through-holes is mounted so as to cover the opening of the annular frame;
    On the chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing device on the back surface of the wafer adhering region of the adhesive tape mounted on the annular frame A frame fixing step of mounting and fixing the annular frame by a clamp disposed on the chuck table; On the chuck table formed with an outer diameter smaller than the inner diameter of the circular recess for sucking and holding the workpiece of the processing device on the back surface of the wafer adhering region of the adhesive tape mounted on the annular frame A frame fixing step of mounting and fixing the annular frame by a clamp disposed on the chuck table;
    The back surface corresponding to the device area of the wafer is placed on the front surface of the wafer attachment area of the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding area of the chuck table so that the adhesive tape Is sucked and held in the suction holding area, and the back surface corresponding to the device area of the wafer is sucked by applying a suction force to the wafer through the plurality of through-holes provided in the adhesive tape. Wafer sticking process to stick on the surface, The back surface corresponding to the device area of ​​the wafer is placed on the front surface of the wafer attachment area of ​​the adhesive tape placed on the chuck table, and a suction force is applied to the suction holding area of ​​the chuck table so that the Adhesive tape Is sucked and held in the suction holding area, and the back surface corresponding to the device area of ​​the wafer is sucked by applying a suction force to the wafer through the plurality of through-holes provided in the adhesive tape. Wafer sticking process to stick on the surface,
    A surplus area removing step of cutting and removing the surplus area of the wafer adhered to the surface of the adhesive tape sucked and held in the suction holding area of the chuck table by a processing means of the processing apparatus; A surplus area removing step of cutting and removing the surplus area of ​​the wafer adhered to the surface of the adhesive tape sucked and held in the suction holding area of ​​the chuck table by a processing means of the processing apparatus;
    A dividing step of cutting along the street the processing device of the processing apparatus the wafer from which the surplus region has been removed by being attached to the surface of the adhesive tape sucked and held in the suction holding region of the chuck table. , A dividing step of cutting along the street the processing device of the processing apparatus the wafer from which the surplus region has been removed by being attached to the surface of the adhesive tape sucked and held in the suction holding region of the chuck table.,
    A method for processing a wafer. A method for processing a wafer.
  2. 該補強部形成工程は、ウエーハの裏面における該デバイス領域に対応する領域を研削して円形状の凹部を形成する、請求項1記載のウエーハの加工方法。 The wafer processing method according to claim 1, wherein in the reinforcing portion forming step, a region corresponding to the device region on the back surface of the wafer is ground to form a circular recess.
JP2005246521A 2005-08-26 2005-08-26 Adhesive tape used for wafer processing method and wafer processing method Active JP4874602B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005246521A JP4874602B2 (en) 2005-08-26 2005-08-26 Adhesive tape used for wafer processing method and wafer processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005246521A JP4874602B2 (en) 2005-08-26 2005-08-26 Adhesive tape used for wafer processing method and wafer processing method
US11/505,895 US7608523B2 (en) 2005-08-26 2006-08-18 Wafer processing method and adhesive tape used in the wafer processing method

Publications (2)

Publication Number Publication Date
JP2007059829A JP2007059829A (en) 2007-03-08
JP4874602B2 true JP4874602B2 (en) 2012-02-15

Family

ID=37923012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005246521A Active JP4874602B2 (en) 2005-08-26 2005-08-26 Adhesive tape used for wafer processing method and wafer processing method

Country Status (1)

Country Link
JP (1) JP4874602B2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009289809A (en) * 2008-05-27 2009-12-10 Fuji Electric Device Technology Co Ltd Method of manufacturing semiconductor device
JP5193753B2 (en) * 2008-08-28 2013-05-08 リンテック株式会社 Dicing sheet and semiconductor chip manufacturing method
JP5193752B2 (en) * 2008-08-28 2013-05-08 リンテック株式会社 Laser dicing sheet and semiconductor chip manufacturing method
JP2010062375A (en) * 2008-09-04 2010-03-18 Disco Abrasive Syst Ltd Method of processing wafer
JP5471064B2 (en) * 2009-06-24 2014-04-16 富士電機株式会社 Manufacturing method of semiconductor device
JP5523033B2 (en) * 2009-09-14 2014-06-18 株式会社ディスコ Wafer processing method and annular convex portion removing device
JP5595056B2 (en) * 2010-02-01 2014-09-24 株式会社ディスコ Annular convex removing device
JP5651362B2 (en) * 2010-03-29 2015-01-14 リンテック株式会社 Dicing apparatus and dicing method
JP5660909B2 (en) * 2011-01-27 2015-01-28 株式会社ディスコ Annular convex part removing device and annular convex part removing method
JP6018730B2 (en) * 2011-03-14 2016-11-02 リンテック株式会社 Dicing sheet and semiconductor chip manufacturing method
JP6029481B2 (en) * 2013-02-04 2016-11-24 リンテック株式会社 Laser dicing sheet and semiconductor chip manufacturing method
EP2824697A1 (en) 2013-07-10 2015-01-14 Mechatronic Systemtechnik GmbH Device for removing a ring-shaped reinforcement edge from a ground semiconductor wafer
JP6576172B2 (en) * 2015-09-03 2019-09-18 株式会社ディスコ Chuck table
JP2019012773A (en) 2017-06-30 2019-01-24 株式会社ディスコ Processing method of wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222146A (en) * 1985-02-12 1986-10-02 Matsushita Electronics Corp Sheet for supporting semiconductor wafer
JPH11111647A (en) * 1997-10-06 1999-04-23 Matsushita Electron Corp Method and device for cutting semiconductor wafer
JP2001257185A (en) * 2000-03-13 2001-09-21 Toshiba Corp Machining method of semiconductor device and semiconductor substrate
JP4697823B2 (en) * 2000-05-16 2011-06-08 株式会社ディスコ Method for dividing brittle substrate
JP4462997B2 (en) * 2003-09-26 2010-05-12 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
JP2007059829A (en) 2007-03-08

Similar Documents

Publication Publication Date Title
US7507639B2 (en) Wafer dividing method
JP4630692B2 (en) Laser processing method
TWI455196B (en) Processing method of optical element wafers (2)
DE102004043474B4 (en) Wafer processing method
US7348275B2 (en) Processing method for semiconductor wafer
DE102007038343B9 (en) Process for processing wafers
JP5073962B2 (en) Wafer processing method
JP4256214B2 (en) Plate-shaped material dividing device
US7727810B2 (en) Wafer dividing method
KR20150142597A (en) Wafer machining method
KR20170012025A (en) Method of reducing wafer thickness
JP2010251661A (en) Method of processing optical device wafer
JP2007235069A (en) Wafer machining method
TWI505496B (en) Processing method of optical element wafers
TWI518761B (en) Method of segmenting optical element wafers
US7745311B2 (en) Working method for an optical device wafer
JP4447392B2 (en) Wafer dividing method and dividing apparatus
KR20140105375A (en) Wafer machining method
JP2009206162A (en) Method of dividing wafer
JP2005019525A (en) Method of manufacturing semiconductor chip
JP4439990B2 (en) Laser processing method
US7384859B2 (en) Cutting method for substrate and cutting apparatus therefor
JP2011124266A (en) Method of processing wafer
KR101831914B1 (en) Wafer processing method
JP2005086161A (en) Method of working wafer

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080708

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101014

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101026

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110506

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110704

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111124

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141202

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4874602

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141202

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250