JP6141024B2 - 撮像装置および撮像システム - Google Patents

撮像装置および撮像システム Download PDF

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Publication number
JP6141024B2
JP6141024B2 JP2013004051A JP2013004051A JP6141024B2 JP 6141024 B2 JP6141024 B2 JP 6141024B2 JP 2013004051 A JP2013004051 A JP 2013004051A JP 2013004051 A JP2013004051 A JP 2013004051A JP 6141024 B2 JP6141024 B2 JP 6141024B2
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JP
Japan
Prior art keywords
pixel
photoelectric conversion
microlenses
conversion unit
microlens
Prior art date
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Expired - Fee Related
Application number
JP2013004051A
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English (en)
Japanese (ja)
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JP2013179575A5 (enExample
JP2013179575A (ja
Inventor
聡子 飯田
聡子 飯田
潤 伊庭
潤 伊庭
和昭 田代
和昭 田代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013004051A priority Critical patent/JP6141024B2/ja
Priority to US13/751,686 priority patent/US9261769B2/en
Publication of JP2013179575A publication Critical patent/JP2013179575A/ja
Publication of JP2013179575A5 publication Critical patent/JP2013179575A5/ja
Application granted granted Critical
Publication of JP6141024B2 publication Critical patent/JP6141024B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B33/00—Colour photography, other than mere exposure or projection of a colour film
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0076—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a detector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013004051A 2012-02-10 2013-01-11 撮像装置および撮像システム Expired - Fee Related JP6141024B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013004051A JP6141024B2 (ja) 2012-02-10 2013-01-11 撮像装置および撮像システム
US13/751,686 US9261769B2 (en) 2012-02-10 2013-01-28 Imaging apparatus and imaging system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012027724 2012-02-10
JP2012027724 2012-02-10
JP2013004051A JP6141024B2 (ja) 2012-02-10 2013-01-11 撮像装置および撮像システム

Publications (3)

Publication Number Publication Date
JP2013179575A JP2013179575A (ja) 2013-09-09
JP2013179575A5 JP2013179575A5 (enExample) 2016-02-12
JP6141024B2 true JP6141024B2 (ja) 2017-06-07

Family

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JP2013004051A Expired - Fee Related JP6141024B2 (ja) 2012-02-10 2013-01-11 撮像装置および撮像システム

Country Status (2)

Country Link
US (1) US9261769B2 (enExample)
JP (1) JP6141024B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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JP5956840B2 (ja) 2012-06-20 2016-07-27 キヤノン株式会社 固体撮像装置及びカメラ
TW201430436A (zh) * 2013-01-22 2014-08-01 Hon Hai Prec Ind Co Ltd 相機致動器可動架組裝裝置與相機致動器可動架組裝方法
JP6368115B2 (ja) 2013-05-10 2018-08-01 キヤノン株式会社 固体撮像装置およびカメラ
JP6207351B2 (ja) 2013-11-12 2017-10-04 キヤノン株式会社 固体撮像装置および撮像システム
JP2016009813A (ja) * 2014-06-26 2016-01-18 ソニー株式会社 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
JP6579774B2 (ja) 2015-03-30 2019-09-25 キヤノン株式会社 固体撮像装置およびカメラ
JP6494368B2 (ja) 2015-03-30 2019-04-03 キヤノン株式会社 固体撮像装置およびカメラ
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP2017098809A (ja) 2015-11-26 2017-06-01 キヤノン株式会社 光電変換装置、および、撮像システム
JP6702711B2 (ja) 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム
JP6732468B2 (ja) 2016-02-16 2020-07-29 キヤノン株式会社 光電変換装置及びその駆動方法
JPWO2018030213A1 (ja) * 2016-08-09 2019-06-13 ソニー株式会社 固体撮像素子、固体撮像素子の瞳補正方法、撮像装置及び情報処理装置
US9991302B1 (en) * 2016-11-17 2018-06-05 Visera Technologies Company Limited Optical sensor with color filters having inclined sidewalls
JP6817835B2 (ja) 2017-02-07 2021-01-20 キヤノン株式会社 撮像装置及び撮像システム
JP6784609B2 (ja) 2017-02-24 2020-11-11 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP6894760B2 (ja) 2017-05-17 2021-06-30 キヤノン株式会社 光電変換装置及び撮像システム
JP7097740B2 (ja) 2018-04-24 2022-07-08 東京エレクトロン株式会社 成膜装置および成膜方法
DE102019211277A1 (de) * 2019-07-30 2021-02-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Messvorrichtung zur frequenzaufgelösten Messung einer Intensität einer elektromagnetischen Strahlung

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US6717151B2 (en) 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP2003332548A (ja) * 2002-05-16 2003-11-21 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法
US6638786B2 (en) * 2002-10-25 2003-10-28 Hua Wei Semiconductor (Shanghai ) Co., Ltd. Image sensor having large micro-lenses at the peripheral regions
JP4508619B2 (ja) 2003-12-03 2010-07-21 キヤノン株式会社 固体撮像装置の製造方法
US7372497B2 (en) * 2004-04-28 2008-05-13 Taiwan Semiconductor Manufacturing Company Effective method to improve sub-micron color filter sensitivity
JP2006073885A (ja) 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
KR20060077709A (ko) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 시모스 이미지 센서
JP2007155930A (ja) * 2005-12-01 2007-06-21 Nikon Corp 固体撮像素子及びこれを用いた撮像装置
US7625157B2 (en) * 2007-01-18 2009-12-01 Kennametal Inc. Milling cutter and milling insert with coolant delivery
JP5173496B2 (ja) 2008-03-06 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP5123701B2 (ja) 2008-03-13 2013-01-23 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP5404112B2 (ja) 2009-03-12 2014-01-29 キヤノン株式会社 固体撮像素子、その駆動方法及び撮像システム
JP2011004390A (ja) 2009-05-18 2011-01-06 Canon Inc 撮像装置、撮像システム、及び撮像装置の駆動方法
JP2011015219A (ja) * 2009-07-02 2011-01-20 Toshiba Corp 固体撮像装置
JP5489570B2 (ja) 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
JP5232118B2 (ja) * 2009-09-30 2013-07-10 富士フイルム株式会社 撮像デバイスおよび電子カメラ
CN102483510B (zh) 2009-11-20 2015-04-15 富士胶片株式会社 固态成像装置
JP2013106206A (ja) 2011-11-14 2013-05-30 Canon Inc 固体撮像装置
JP6035744B2 (ja) * 2012-01-10 2016-11-30 凸版印刷株式会社 固体撮像素子

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US20130208172A1 (en) 2013-08-15
JP2013179575A (ja) 2013-09-09
US9261769B2 (en) 2016-02-16

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