JP6131195B2 - スイッチノードリンギングが低減された３次元電源モジュール - Google Patents

スイッチノードリンギングが低減された３次元電源モジュール Download PDF

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Publication number
JP6131195B2
JP6131195B2 JP2013553496A JP2013553496A JP6131195B2 JP 6131195 B2 JP6131195 B2 JP 6131195B2 JP 2013553496 A JP2013553496 A JP 2013553496A JP 2013553496 A JP2013553496 A JP 2013553496A JP 6131195 B2 JP6131195 B2 JP 6131195B2
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Prior art keywords
power supply
supply module
die
terminal
fet die
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Japanese (ja)
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JP2014511027A (ja
JP2014511027A5 (https=
Inventor
エイ エルボソメール ファン
エイ エルボソメール ファン
ジェイ ロペス オスバルド
ジェイ ロペス オスバルド
エイ ノキル ジョナサン
エイ ノキル ジョナサン
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07653—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Dc-Dc Converters (AREA)
JP2013553496A 2011-02-07 2012-02-07 スイッチノードリンギングが低減された３次元電源モジュール Active JP6131195B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/021,969 US20120200281A1 (en) 2011-02-07 2011-02-07 Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US13/021,969 2011-02-07
PCT/US2012/024171 WO2012109265A2 (en) 2011-02-07 2012-02-07 Three-dimensional power supply module having reduced switch node ringing

Publications (3)

Publication Number Publication Date
JP2014511027A JP2014511027A (ja) 2014-05-01
JP2014511027A5 JP2014511027A5 (https=) 2015-03-26
JP6131195B2 true JP6131195B2 (ja) 2017-05-17

Family

ID=46600221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013553496A Active JP6131195B2 (ja) 2011-02-07 2012-02-07 スイッチノードリンギングが低減された３次元電源モジュール

Country Status (4)

Country Link
US (1) US20120200281A1 (https=)
JP (1) JP6131195B2 (https=)
CN (2) CN103348469A (https=)
WO (1) WO2012109265A2 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453831B (zh) 2010-09-09 2014-09-21 台灣捷康綜合有限公司 半導體封裝結構及其製造方法
US8981748B2 (en) * 2011-08-08 2015-03-17 Semiconductor Components Industries, Llc Method of forming a semiconductor power switching device, structure therefor, and power converter
US9589872B2 (en) * 2012-03-28 2017-03-07 Infineon Technologies Americas Corp. Integrated dual power converter package having internal driver IC
US9171784B2 (en) * 2012-03-28 2015-10-27 International Rectifier Corporation Dual power converter package using external driver IC
US20140063744A1 (en) * 2012-09-05 2014-03-06 Texas Instruments Incorporated Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
JP5966921B2 (ja) * 2012-12-28 2016-08-10 トヨタ自動車株式会社 半導体モジュールの製造方法
US9966330B2 (en) 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
US9589929B2 (en) 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US9136256B2 (en) * 2014-02-20 2015-09-15 Texas Instruments Incorporated Converter having partially thinned leadframe with stacked chips and interposer, free of wires and clips
US9355942B2 (en) * 2014-05-15 2016-05-31 Texas Instruments Incorporated Gang clips having distributed-function tie bars
US9515014B2 (en) 2014-10-08 2016-12-06 Infineon Technologies Americas Corp. Power converter package with integrated output inductor
US10103140B2 (en) * 2016-10-14 2018-10-16 Alpha And Omega Semiconductor Incorporated Switch circuit with controllable phase node ringing
WO2018211680A1 (ja) 2017-05-19 2018-11-22 新電元工業株式会社 電子モジュール
US11276663B2 (en) * 2017-05-19 2022-03-15 Shindengen Electric Manufacturing Co., Ltd. Electronic module
WO2018211686A1 (ja) * 2017-05-19 2018-11-22 新電元工業株式会社 電子モジュール
WO2019082345A1 (ja) * 2017-10-26 2019-05-02 新電元工業株式会社 半導体装置、及び、半導体装置の製造方法
DE102018207308B4 (de) * 2018-05-09 2020-07-02 Infineon Technologies Ag Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung
US20200194347A1 (en) * 2018-12-18 2020-06-18 Alpha And Omega Semiconductor (Cayman) Ltd. Semiconductor package and method of making the same
US11616295B2 (en) 2019-03-12 2023-03-28 Epirus, Inc. Systems and methods for adaptive generation of high power electromagnetic radiation and their applications
US11658410B2 (en) 2019-03-12 2023-05-23 Epirus, Inc. Apparatus and method for synchronizing power circuits with coherent RF signals to form a steered composite RF signal
US11211703B2 (en) 2019-03-12 2021-12-28 Epirus, Inc. Systems and methods for dynamic biasing of microwave amplifier
US11469722B2 (en) 2020-06-22 2022-10-11 Epirus, Inc. Systems and methods for modular power amplifiers
US12068618B2 (en) 2021-07-01 2024-08-20 Epirus, Inc. Systems and methods for compact directed energy systems
US12381523B2 (en) 2020-06-22 2025-08-05 Epirus, Inc. Systems and methods for radio frequency power systems
US12003223B2 (en) 2020-06-22 2024-06-04 Epirus, Inc. Systems and methods for modular power amplifiers
US20220020671A1 (en) * 2020-07-20 2022-01-20 Electronics And Telecommunications Research Institute Flip-stack type semiconductor package and method of manufacturing the same
US12273075B2 (en) 2021-07-01 2025-04-08 Epirus, Inc. Systems and methods for power distribution for amplifier arrays
CN115188756B (zh) * 2022-06-24 2025-10-24 艾科微电子(深圳)有限公司 芯片堆叠结构

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421262B1 (en) * 2000-02-08 2002-07-16 Vlt Corporation Active rectifier
JP2005217072A (ja) * 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
JP4489485B2 (ja) * 2004-03-31 2010-06-23 株式会社ルネサステクノロジ 半導体装置
CN101819955B (zh) * 2004-12-20 2011-09-28 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
US7598603B2 (en) * 2006-03-15 2009-10-06 Infineon Technologies Ag Electronic component having a power switch with an anode thereof mounted on a die attach region of a heat sink
DE102006021959B4 (de) * 2006-05-10 2011-12-29 Infineon Technologies Ag Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US7569920B2 (en) * 2006-05-10 2009-08-04 Infineon Technologies Ag Electronic component having at least one vertical semiconductor power transistor
DE102006034679A1 (de) * 2006-07-24 2008-01-31 Infineon Technologies Ag Halbleitermodul mit Leistungshalbleiterchip und passiven Bauelement sowie Verfahren zur Herstellung desselben
US7485954B2 (en) * 2006-09-07 2009-02-03 Alpha And Omega Semiconductor Limited Stacked dual MOSFET package
DE102007009521B4 (de) * 2007-02-27 2011-12-15 Infineon Technologies Ag Bauteil und Verfahren zu dessen Herstellung
US7683477B2 (en) * 2007-06-26 2010-03-23 Infineon Technologies Ag Semiconductor device including semiconductor chips having contact elements
US7750445B2 (en) * 2007-09-18 2010-07-06 Fairchild Semiconductor Corporation Stacked synchronous buck converter
US8035221B2 (en) * 2007-11-08 2011-10-11 Intersil Americas, Inc. Clip mount for integrated circuit leadframes
US7696612B2 (en) * 2008-01-28 2010-04-13 Fairchild Semiconductor Corporation Multiphase synchronous buck converter
US8120152B2 (en) * 2008-03-14 2012-02-21 Advanced Semiconductor Engineering, Inc. Advanced quad flat no lead chip package having marking and corner lead features and manufacturing methods thereof
US8148815B2 (en) * 2008-10-13 2012-04-03 Intersil Americas, Inc. Stacked field effect transistor configurations
CN101442035B (zh) * 2008-12-14 2011-03-16 天水华天科技股份有限公司 一种扁平无引线封装件及其生产方法
US20100171543A1 (en) * 2009-01-08 2010-07-08 Ciclon Semiconductor Device Corp. Packaged power switching device
US8680627B2 (en) * 2011-01-14 2014-03-25 International Rectifier Corporation Stacked half-bridge package with a common conductive clip

Also Published As

Publication number Publication date
CN103348469A (zh) 2013-10-09
JP2014511027A (ja) 2014-05-01
WO2012109265A2 (en) 2012-08-16
US20120200281A1 (en) 2012-08-09
CN108987365A (zh) 2018-12-11
WO2012109265A3 (en) 2012-11-01

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