JP6117799B2 - 大気圧化学蒸着法によるケイ素酸化物の蒸着 - Google Patents
大気圧化学蒸着法によるケイ素酸化物の蒸着 Download PDFInfo
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- JP6117799B2 JP6117799B2 JP2014533574A JP2014533574A JP6117799B2 JP 6117799 B2 JP6117799 B2 JP 6117799B2 JP 2014533574 A JP2014533574 A JP 2014533574A JP 2014533574 A JP2014533574 A JP 2014533574A JP 6117799 B2 JP6117799 B2 JP 6117799B2
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- silicon oxide
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 125
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 94
- 238000000151 deposition Methods 0.000 title claims description 79
- 230000008021 deposition Effects 0.000 title description 71
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims description 128
- 239000002243 precursor Substances 0.000 claims description 105
- 238000000034 method Methods 0.000 claims description 54
- 238000000576 coating method Methods 0.000 claims description 47
- 239000011521 glass Substances 0.000 claims description 45
- GHBKQPVRPCGRAQ-UHFFFAOYSA-N octylsilicon Chemical compound CCCCCCCC[Si] GHBKQPVRPCGRAQ-UHFFFAOYSA-N 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 22
- 229910001887 tin oxide Inorganic materials 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- KRZXWIWNHRUKDF-UHFFFAOYSA-N hexylsilicon Chemical compound CCCCCC[Si] KRZXWIWNHRUKDF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 150000004756 silanes Chemical class 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 3
- ZTAYJSRSQODHEO-UHFFFAOYSA-N butylsilicon Chemical compound CCCC[Si] ZTAYJSRSQODHEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004811 fluoropolymer Substances 0.000 claims description 3
- 229920002313 fluoropolymer Polymers 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
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- 229920005989 resin Polymers 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 42
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 125000004432 carbon atom Chemical group C* 0.000 description 16
- 125000000217 alkyl group Chemical group 0.000 description 15
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- 229910044991 metal oxide Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000012686 silicon precursor Substances 0.000 description 6
- 239000005361 soda-lime glass Substances 0.000 description 6
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- -1 skin Substances 0.000 description 4
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- FQEKAFQSVPLXON-UHFFFAOYSA-N butyl(trichloro)silane Chemical compound CCCC[Si](Cl)(Cl)Cl FQEKAFQSVPLXON-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- UOUILILVWRHZSH-UHFFFAOYSA-N dimethyl-tris[(dimethyl-$l^{3}-silanyl)oxy]silyloxysilicon Chemical compound C[Si](C)O[Si](O[Si](C)C)(O[Si](C)C)O[Si](C)C UOUILILVWRHZSH-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
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- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- ZGYICYBLPGRURT-UHFFFAOYSA-N tri(propan-2-yl)silicon Chemical compound CC(C)[Si](C(C)C)C(C)C ZGYICYBLPGRURT-UHFFFAOYSA-N 0.000 description 3
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 3
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 3
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 3
- QHUNJMXHQHHWQP-UHFFFAOYSA-N trimethylsilyl acetate Chemical compound CC(=O)O[Si](C)(C)C QHUNJMXHQHHWQP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
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- 239000000356 contaminant Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
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- 238000010923 batch production Methods 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
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- 239000005388 borosilicate glass Substances 0.000 description 1
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- 239000002131 composite material Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 150000001354 dialkyl silanes Chemical class 0.000 description 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
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- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/1525—Deposition methods from the vapour phase by cvd by atmospheric CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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Description
(a)基材を準備する工程(好ましくは基材を加熱する工程);
(b)少なくとも1種の、2個を超える炭素原子を有するアルキル基を有するモノアルキルシランを含む前駆体を蒸発させて、蒸発させた前駆体のストリームを形成させる工程;及び
(c)その加熱された基材の表面を、ほぼ大気圧で、蒸発させた前駆体のストリームと接触させて、その基材の表面上に、少なくとも1層のケイ素酸化物を含む層を蒸着させる工程。
(a)ガラス基材を加熱する工程;
(b)少なくとも1種の、2個を超える炭素原子を有するアルキル基を有するモノアルキルシランを含む前駆体を蒸発させて、蒸発させた前駆体のストリームを形成させる工程;及び
(c)その加熱したガラス基材の表面を、ほぼ大気圧で、その蒸発させた前駆体のストリーム及びオキシダントと接触させて、そのガラス基材の表面上に、約1.4〜約2.0の範囲の屈折率を有する、少なくとも1層のケイ素酸化物を含む層を蒸着させる工程。
(a)基材を加熱する工程;及び
(b)その加熱された基材の表面を、ほぼ大気圧で、蒸発させた、2個を超える炭素原子を有するアルキル基を有するモノアルキルシランを含む前駆体ガスと接触させて、ケイ素酸化物含有膜を形成させる工程。
n−オクチルシランを、4.5標準リットル/分(slm)の180℃に加熱した窒素キャリアガスの中で蒸発させた。次いで、その蒸発させたn−オクチルシランストリームを、6.5slmの180℃に加熱した乾燥空気と合わせて、単一のストリームとして、ソーダ石灰シリカガラス基材の表面に送った。そのソーダ石灰シリカガラス基材は、あらかじめ170nmのスズ酸化物でプレコートして、625〜650℃に加熱しておいたものである。蒸着後の光学的特性解析から、6.5nm/sの蒸着速度で、390nmの二酸化ケイ素が生成していることが明らかになった。
注:SiO2は、得られた層の光学的特性解析を容易とするために、スズ酸化物(高屈折率)でコーティングされたガラスの上に蒸着した。実務的には、ガラス基材の上にSiO2を直接蒸着させることも可能である。
比較のために、蒸発させる前駆体として、n−オクチルシランに代えて1:1のモル比のTEOS及び亜リン酸トリエチルを使用する以外は、実施例1に記載と同じ実験を繰り返した。蒸着後の光学的特性解析から、2.1nm/sの蒸着速度で、125nmの二酸化ケイ素が生成していることが明らかになった。
アルキルシラン前駆体として、n−オクチルシランに代えてn−ヘキシルシランを使用して、実施例1に記載と同じ実験を繰り返した。蒸着後の光学的特性解析から、6nm/sの蒸着速度で、350nmの二酸化ケイ素が生成していることが明らかになった。
蒸発させる前駆体としてn−オクチルシランを用いて、実施例1に記載と同じ実験を繰り返したが、その前駆体混合物に水をさらに添加した。具体的には、水:ケイ素前駆体を約1:1のモル比で添加して、実施例1の条件を繰り返した。蒸着後の光学的特性解析から、6nm/sの速度で、370nmの二酸化ケイ素が蒸着していることが示された。
n−オクチルシランに代えてn−ヘキシルシランを使用して、実施例4の条件を繰り返した。光学的特性解析から、5.6nm/sの速度で、330nmの二酸化ケイ素が蒸着していることが示された。
n−オクチルシランに代えて、1:1のモル比のTEOS及び亜リン酸トリエチルを使用して、実施例4の条件を繰り返した。光学的特性解析から、2.7nm/sの速度で、160nmの二酸化ケイ素が蒸着していることが示された。
180℃に加熱した5slmの窒素の中で、n−オクチルシラン及びモノブチルスズトリクロリド(MBTC)を蒸発させた。次いで、この前駆体ストリームを、8slmの180℃に加熱した乾燥空気のストリームと合わせ、その中に0.22mol%の水を蒸発させた。次いで、この単一のストリームを、625〜650℃に加熱したソーダ石灰シリカガラスの表面に送って、ケイ素とスズの混合酸化物の蒸着物を生成させた。光学的特性解析を実施して、蒸着された膜の屈折率及び厚みを求めた。蒸発器に送るn−オクチルシラン及びMBTC前駆体の相対量を変化させることによって、膜の厚みが85〜125nmの間で、屈折率が1.60〜1.82の範囲となった。蒸着速度は、5.5〜8.5nm/sであった。
n−オクチルシランに代えてアセトキシトリメチルシランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
n−オクチルシランに代えてテトラキス(ジメチルシロキシ)シランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
n−オクチルシランに代えてトリイソプロピルシランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
n−オクチルシランに代えてn−ブチルトリクロロシランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
n−オクチルシランに代えてアリルトリメトキシシランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
n−オクチルシランに代えてトリエトキシフルオロシランを使用して、実施例1の条件を繰り返した。膜の蒸着は観察されなかった。
前駆体としてn−オクチルシランとTEOSの5:1容積比ブレンド物を使用して、実施例1の実験を繰り返した。蒸着後の光学的特性解析から、1.0nm/sの蒸着速度で、60nmの二酸化ケイ素が生成していることが明らかになった。
前記の実験を繰り返したが、ただし、その前駆体混合物に水をさらに添加した。具体的には、その混合物の中での蒸発させた水対ケイ素前駆体のモル比が約1:1となるように、水を添加した。蒸着後の光学的特性解析では、4.4nm/sの蒸着速度で、約265nmの二酸化ケイ素が蒸着されていることが示された。
前記の実験を繰り返したが、ただし、n−オクチルシランとTEOSの5:1容積比ブレンド物に代えて、1:1の容積比ブレンド物を使用した。蒸着後の光学的特性解析では、0.3nm/sの蒸着速度で、約18nmの二酸化ケイ素が蒸着されていることが示された。
Claims (17)
- 基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法であって、
(a)基材を400℃〜800℃の範囲の温度に加熱する工程;
(b)n−ブチルシラン、n−ヘキシルシラン、n−オクチルシラン及びそれらの混合物よりなる群から選択されるモノアルキルシランを含む少なくとも1種の前駆体を蒸発させて、蒸発させた前駆体のストリームを形成させる工程;及び
(c)前記加熱された基材の表面を、大気圧で、前記蒸発させた前駆体のストリームとオキシダントの存在下で接触させて、前記基材の表面上に、少なくとも1層のケイ素酸化物を含む層を蒸着させる工程、
を含む方法。 - 前記少なくとも1層のケイ素酸化物を含む層が、1.4〜2.0の範囲の屈折率を有する、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記少なくとも1層のケイ素酸化物を含む層が透明である、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記基材が、ガラス、フルオロポリマー樹脂、ポリエステル、ポリアクリレート、ポリアミド、ポリイミド、及びポリカーボネートからなる群より選択される、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記基材の表面の上に蒸着された少なくとも一つの層が純粋なケイ素酸化物である、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記基材の表面の上に蒸着された少なくとも一つの層が、ケイ素酸化物を含む混合酸化物である、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記混合酸化物が、スズ酸化物、チタン酸化物、アルミニウム酸化物、亜鉛酸化物、インジウム酸化物、及びそれらの混合物からなる群より選択される高屈折率の酸化物を含む、請求項6に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記蒸発させた前駆体のストリームが、乾燥空気、酸素、窒素、及び水蒸気の内の少なくとも一つをさらに含む、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記蒸発させた前駆体のストリームが、促進剤を含まない、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記少なくとも1層のケイ素酸化物を含む層が、3nm/秒よりも高い速度で、前記基材の表面の上に蒸着される、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記ケイ素酸化物を含む層が、5nm/秒よりも高い速度で、前記基材の表面の上に蒸着される、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記ケイ素酸化物含有層が、10重量%未満の残留炭素しか含まない、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記ケイ素酸化物含有層が、1000ppm未満の残留炭素しか含まない、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- 前記ケイ素酸化物含有層が、20nm〜500nmの範囲の厚みを有する、請求項1に記載の、基材の上に少なくとも1層のケイ素酸化物含有層を形成させる方法。
- ガラス基材の上に、少なくとも1層の虹色抑制ケイ素酸化物コーティングを形成させる方法であって、
(a)ガラス基材を400℃〜800℃の範囲の温度に加熱する工程;
(b)n−ブチルシラン、n−ヘキシルシラン、n−オクチルシラン及びそれらの混合物よりなる群から選択されるモノアルキルシランを含む少なくとも1種の前駆体を蒸発させて、蒸発させた前駆体のストリームを形成させる工程;及び
(c)前記加熱したガラス基材の表面を、大気圧で、前記蒸発させた前駆体のストリーム及びオキシダントと接触させて、前記ガラス基材の表面上に、1.4〜2.0の範囲の屈折率を有する、少なくとも1層のケイ素酸化物を含む層を蒸着させる工程、
を含む方法。 - 前記オキシダントが、乾燥空気又は水蒸気の内の少なくとも一つとして導入される、請求項15に記載の、ガラス基材の上に、少なくとも1層の虹色抑制ケイ素酸化物コーティングを形成させる方法。
- 前記基材の表面の上に蒸着された前記少なくとも一つの層が、ケイ素酸化物、ならびにスズ酸化物、チタン酸化物、アルミニウム酸化物、亜鉛酸化物、及びそれらの混合物からなる群より選択される酸化物を含む混合酸化物である、請求項15に記載の、ガラス基材の上に、少なくとも1層の虹色抑制ケイ素酸化物コーティングを形成させる方法。
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CA2920646A1 (en) * | 2016-02-12 | 2017-08-12 | Seastar Chemicals Inc. | Organometallic compound and method |
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CN110335811B (zh) * | 2019-07-09 | 2021-08-10 | 山东宝乘电子有限公司 | 一种含氧多晶硅钝化膜的沉积方法及具有该钝化膜的芯片 |
GB201910988D0 (en) * | 2019-08-01 | 2019-09-18 | Pilkington Group Ltd | Touchenable coated substrate |
EP4015468A1 (de) | 2020-12-16 | 2022-06-22 | Heraeus Quarzglas GmbH & Co. KG | Verfahren zur herstellung von synthetischem quarzglas |
EP4015467A1 (de) * | 2020-12-16 | 2022-06-22 | Heraeus Quarzglas GmbH & Co. KG | Verfahren zur herstellung von synthetischem quarzglas |
CN113149456A (zh) * | 2021-03-16 | 2021-07-23 | 湖州维德光电科技有限公司 | 一种防止石英玻璃高温变形粘连的纳米氧化铝涂层工艺 |
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US4206252A (en) * | 1977-04-04 | 1980-06-03 | Gordon Roy G | Deposition method for coating glass and the like |
CA1134214A (en) * | 1978-03-08 | 1982-10-26 | Roy G. Gordon | Deposition method |
US4981724A (en) * | 1988-10-27 | 1991-01-01 | Hochberg Arthur K | Deposition of silicon oxide films using alkylsilane liquid sources |
US5527629A (en) * | 1990-12-17 | 1996-06-18 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Process of depositing a layer of silicon oxide bonded to a substrate of polymeric material using high pressure and electrical discharge |
CA2104591C (en) * | 1991-12-26 | 2000-03-14 | David A. Russo | Composition for coating glass containing an accelerant |
US5670224A (en) * | 1992-11-13 | 1997-09-23 | Energy Conversion Devices, Inc. | Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates |
GB9723222D0 (en) * | 1997-11-04 | 1998-01-07 | Pilkington Plc | Coating glass |
US6028014A (en) * | 1997-11-10 | 2000-02-22 | Lsi Logic Corporation | Plasma-enhanced oxide process optimization and material and apparatus therefor |
US5976991A (en) * | 1998-06-11 | 1999-11-02 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane |
US6303047B1 (en) * | 1999-03-22 | 2001-10-16 | Lsi Logic Corporation | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same |
US6524974B1 (en) * | 1999-03-22 | 2003-02-25 | Lsi Logic Corporation | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidizing agent in the presence of one or more reaction retardants |
JP2001291713A (ja) * | 2000-04-07 | 2001-10-19 | Canon Sales Co Inc | 成膜方法及び半導体装置 |
US6716770B2 (en) * | 2001-05-23 | 2004-04-06 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
JP2003048753A (ja) * | 2001-08-03 | 2003-02-21 | Nippon Sheet Glass Co Ltd | 薄膜を備えたガラス基板およびその製造方法 |
JP4124430B2 (ja) * | 2002-09-05 | 2008-07-23 | 大日本印刷株式会社 | 高親水性積層体 |
US20050044894A1 (en) * | 2003-08-29 | 2005-03-03 | Douglas Nelson | Deposition of silica coatings on a substrate |
CN100567565C (zh) * | 2006-03-08 | 2009-12-09 | 联华电子股份有限公司 | 含硅薄膜的形成方法与减少微粒数目的方法 |
US8323753B2 (en) * | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
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2012
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- 2012-09-13 EP EP12836663.0A patent/EP2761054B1/en not_active Not-in-force
- 2012-09-13 US US14/346,764 patent/US20140227512A1/en not_active Abandoned
- 2012-09-13 RU RU2014117616/03A patent/RU2014117616A/ru not_active Application Discontinuation
- 2012-09-13 JP JP2014533574A patent/JP6117799B2/ja not_active Expired - Fee Related
- 2012-09-13 CN CN201280059123.1A patent/CN103958731B/zh not_active Expired - Fee Related
- 2012-09-28 TW TW101136105A patent/TW201313946A/zh unknown
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JP2014532118A (ja) | 2014-12-04 |
EP2761054A1 (en) | 2014-08-06 |
WO2013048751A1 (en) | 2013-04-04 |
US20140227512A1 (en) | 2014-08-14 |
CN103958731B (zh) | 2016-12-21 |
CN103958731A (zh) | 2014-07-30 |
TW201313946A (zh) | 2013-04-01 |
EP2761054A4 (en) | 2015-09-30 |
EP2761054B1 (en) | 2019-08-14 |
RU2014117616A (ru) | 2015-11-10 |
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