JP6114260B2 - 音響体積波で動作するbawフィルタ - Google Patents
音響体積波で動作するbawフィルタ Download PDFInfo
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- JP6114260B2 JP6114260B2 JP2014508782A JP2014508782A JP6114260B2 JP 6114260 B2 JP6114260 B2 JP 6114260B2 JP 2014508782 A JP2014508782 A JP 2014508782A JP 2014508782 A JP2014508782 A JP 2014508782A JP 6114260 B2 JP6114260 B2 JP 6114260B2
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- 239000010410 layer Substances 0.000 claims description 61
- 239000003990 capacitor Substances 0.000 claims description 27
- 239000002346 layers by function Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 238000009966 trimming Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
このバランは、不平衡入力ポートEPを第1の平衡出力ポートAP1に接続する第1の信号路S1を備える。この第1の信号路S1には、第1のインダクタンスL1,第1のノードK1,第2のインダクタンスL2および第2のノードK2が直列に接続されている。さらに、このバランは、第1のコンデンサC1,第3のインダクタンスL3および第3のノードK3を介して第2のノードK2を第2の平衡出力ポートAP2に接続する信号路S2を備える。
SP 音響ミラー
BE 下側電極
PZ 圧電層
TE 上側電極
TR トリミング層
EP 入力ポート
AP1,AP2 出力ポート
S1〜S3 信号路
L1〜L3 インダクタンス
K1〜K4 ノード
C1,C2 コンデンサ
GND 基準電位
M1_TE〜M6_TE 上側電極のメタライジング
M1_BE〜M5_BE 下側電極のメタライジング
D1〜D7 貫通接触配線
S12 Txフィルタの挿入損失
S23 Rxフィルタの挿入損失
S33 受信ポートの反射係数
S13 絶縁
Claims (8)
- 基板上に配設された多層構造の、音響体積波で動作するBAWフィルタであって、
前記基板上に、音響ミラー(SP)、第1の電極(BE)、圧電層(PZ)、第2の電極(TE)および、トリミング層(TR)をこの順に備えるBAW共振器が、前記多層構造の機能層によって実現され、
前記音響ミラー(SP)は金属層を備え、
さらに前記機能層によって、少なくとも1つのインダクタンスと少なくとも1つのコンデンサとを備えるバランが、前記BAW共振器に隣接して形成され、
前記インダクタンスは、前記第1の電極(BE)、前記第2の電極(TE)、又は前記音響ミラー(SP)の金属層を構成する前記機能層の一層又は多層により形成され、
前記コンデンサは、前記第1の電極(BE)、前記第2の電極(TE)、又は前記音響ミラー(SP)の金属層を構成する前記機能層のうちの2つの異なる層の互いに重なる部分により形成されている、
ことを特徴とするBAWフィルタ。 - 請求項1に記載のBAWフィルタにおいて、
前記コンデンサは、前記第1の電極(BE)及び前記第2の電極(TE)を構成する前記機能層により形成されていることを特徴とするBAWフィルタ。 - 請求項1又は2に記載のBAWフィルタにおいて、
前記インダクタンスの2つが、前記第一の電極(BE)及び前記第2の電極(TE)を構成する前記機能層にそれぞれスパイラル状に形成され、少なくとも部分的に互いに重なって配置されている、
ことを特徴とするBAWフィルタ。 - 請求項1から3のいずれかに記載のBAWフィルタにおいて、
前記少なくとも1つのインダクタンスは、第1、第2及び第3の3つのインダクタンスよりなり、前記少なくとも1つのコンデンサは第1及び第2の2つのコンデンサ(C1,C2)よりなり、
前記バランは1つの不平衡入力(EP)を、第1の信号路(S1),第2の信号路(S2),および第3の信号路(S3)を介して、平衡出力の第1の平衡出力ポート(AP1)および第2の平衡出力ポート(AP2)に接続し、
前記第1の信号路(S1)は、前記第1のインダクタンス(L1)、第1のノード(K1)、前記第2のインダクタンス(L2)および第2のノード(K2)を介して不平衡入力(EP)を第1の平衡出力ポート(AP1)に接続し、
前記第2の信号路(S2)は、前記第1のコンデンサ(C1)、前記第3のインダクタンス(L3)および第3のノード(K3)を介して前記第2のノード(K2)を第2の平衡出力ポート(AP2)に接続し、
前記第3の信号路(S3)は、前記第2のコンデンサ(C2)を介して前記第1のノード(K1)を前記第3のノード(K3)に接続する、
ことを特徴とするBAWフィルタ。 - 請求項1〜4のいずれかに1項に記載のBAWフィルタを製造するための方法であって、
前記BAW共振器の第1の電極(BE)、第2の電極(TE)および、音響ミラー(SP)の金属層、並びに前記バランのインダクタンス及びコンデンサを、前記多層構造の機能層をパターニングして形成することを特徴とする方法。 - 請求項5に記載の方法において、
前記インダクタンスおよび/または前記コンデンサを、フォトリソグラフィーパターニングによって形成することを特徴とする方法。 - 請求項5または6に記載の方法において、
前記BAW共振器と前記バランは、時間的に並行してパターニングされることを特徴とする方法。 - 請求項1乃至4のいずれか1項に記載のBAWフィルタと、音響波で動作するもう1つのフィルタとが1つの共通なチップに配設されているデュプレクサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011100468.1 | 2011-05-04 | ||
DE102011100468A DE102011100468B4 (de) | 2011-05-04 | 2011-05-04 | Mit akustischen Volumenwellen arbeitendes BAW-Filter, Herstellungsverfahren hierfür und Duplexer |
PCT/EP2012/058028 WO2012150261A1 (de) | 2011-05-04 | 2012-05-02 | Mit akustischen volumenwellen arbeitendes baw-filter |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014519234A JP2014519234A (ja) | 2014-08-07 |
JP2014519234A5 JP2014519234A5 (ja) | 2017-02-09 |
JP6114260B2 true JP6114260B2 (ja) | 2017-04-12 |
Family
ID=46197231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014508782A Active JP6114260B2 (ja) | 2011-05-04 | 2012-05-02 | 音響体積波で動作するbawフィルタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9859868B2 (ja) |
JP (1) | JP6114260B2 (ja) |
KR (1) | KR101889817B1 (ja) |
DE (1) | DE102011100468B4 (ja) |
WO (1) | WO2012150261A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10069474B2 (en) | 2015-11-17 | 2018-09-04 | Qualcomm Incorporated | Encapsulation of acoustic resonator devices |
KR102456843B1 (ko) | 2017-12-28 | 2022-10-21 | 한국전자통신연구원 | 발룬을 포함하는 고주파 신호 증폭기 |
DE102018121689B3 (de) * | 2018-09-05 | 2020-02-13 | RF360 Europe GmbH | BAW-Resonator mit erhöhter Bandbreite |
KR20230045799A (ko) | 2021-09-29 | 2023-04-05 | (주)와이솔 | Baw형 공진기를 포함하는 필터 |
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US6262637B1 (en) * | 1999-06-02 | 2001-07-17 | Agilent Technologies, Inc. | Duplexer incorporating thin-film bulk acoustic resonators (FBARs) |
DE19962028A1 (de) | 1999-12-22 | 2001-06-28 | Philips Corp Intellectual Pty | Filteranordnung |
US6407649B1 (en) * | 2001-01-05 | 2002-06-18 | Nokia Corporation | Monolithic FBAR duplexer and method of making the same |
JP3973915B2 (ja) * | 2001-03-30 | 2007-09-12 | 株式会社日立メディアエレクトロニクス | 高周波フィルタ、高周波回路、アンテナ共用器及び無線端末 |
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US6710681B2 (en) * | 2001-07-13 | 2004-03-23 | Agilent Technologies, Inc. | Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same |
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-
2011
- 2011-05-04 DE DE102011100468A patent/DE102011100468B4/de not_active Expired - Fee Related
-
2012
- 2012-05-02 US US14/115,328 patent/US9859868B2/en not_active Expired - Fee Related
- 2012-05-02 JP JP2014508782A patent/JP6114260B2/ja active Active
- 2012-05-02 WO PCT/EP2012/058028 patent/WO2012150261A1/de active Application Filing
- 2012-05-02 KR KR1020137029151A patent/KR101889817B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20140030177A (ko) | 2014-03-11 |
JP2014519234A (ja) | 2014-08-07 |
US20140184358A1 (en) | 2014-07-03 |
KR101889817B1 (ko) | 2018-08-20 |
DE102011100468A1 (de) | 2012-11-08 |
US9859868B2 (en) | 2018-01-02 |
DE102011100468B4 (de) | 2013-07-04 |
WO2012150261A1 (de) | 2012-11-08 |
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