JP6110154B2 - 固体撮像装置及び固体撮像装置の製造方法 - Google Patents
固体撮像装置及び固体撮像装置の製造方法 Download PDFInfo
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- JP6110154B2 JP6110154B2 JP2013025620A JP2013025620A JP6110154B2 JP 6110154 B2 JP6110154 B2 JP 6110154B2 JP 2013025620 A JP2013025620 A JP 2013025620A JP 2013025620 A JP2013025620 A JP 2013025620A JP 6110154 B2 JP6110154 B2 JP 6110154B2
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- 238000003384 imaging method Methods 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000008859 change Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14856—Time-delay and integration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Claims (4)
- 半導体基板上に複数のパターンが第一方向に継ぎ合わされるように露光されて形成された受光部を備えた固体撮像装置であって、
前記受光部は、前記第一方向と前記第一方向に直交する第二方向とに2次元状に配列された複数の画素を有し、前記複数の画素のうち、前記第二方向に配列された複数の画素からなる画素列ごとに、電荷を第二方向に転送しており、
前記受光部では、前記複数のパターンが継ぎ合わされる境界が、前記第一方向と前記第二方向とに交差する方向に延びる一つ以上の線分上に沿ってのみ位置していることを特徴とする固体撮像装置。 - 前記複数のパターンが継ぎ合わされる前記境界は、前記第二方向に延びる一つの直線に対して、一箇所のみで交差することを特徴とする請求項1に記載の固体撮像装置。
- TDI駆動が可能であることを特徴とする請求項1又は2に記載の固体撮像装置。
- 半導体基板上に複数のパターンを第一方向に継ぎ合わせるように露光して受光部を形成するステップを備えた固体撮像装置の製造方法であって、
前記受光部は、前記第一方向と前記第一方向に直交する第二方向とに2次元状に配列された複数の画素を有し、前記複数の画素のうち、前記第二方向に配列された複数の画素からなる画素列ごとに、電荷を第二方向に転送しており、
前記受光部では、前記複数のパターンが継ぎ合わされる境界が、前記第一方向と前記第二方向とに交差する方向に延びる一つ以上の線分上に沿ってのみ位置していることを特徴とする固体撮像装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013025620A JP6110154B2 (ja) | 2013-02-13 | 2013-02-13 | 固体撮像装置及び固体撮像装置の製造方法 |
CN201480008752.0A CN104995735B (zh) | 2013-02-13 | 2014-02-12 | 固体摄像装置及固体摄像装置的制造方法 |
EP14751421.0A EP2958147B1 (en) | 2013-02-13 | 2014-02-12 | Solid-state image pickup device and method for manufacturing solid-state image pickup device |
PCT/JP2014/053185 WO2014126100A1 (ja) | 2013-02-13 | 2014-02-12 | 固体撮像装置及び固体撮像装置の製造方法 |
US14/766,788 US9749561B2 (en) | 2013-02-13 | 2014-02-12 | Solid-state image pickup device and method for manufacturing solid-state image pickup device |
KR1020157017814A KR102128639B1 (ko) | 2013-02-13 | 2014-02-12 | 고체 촬상 장치 및 고체 촬상 장치의 제조 방법 |
TW103104780A TWI652809B (zh) | 2013-02-13 | 2014-02-13 | Solid-state imaging device and method of manufacturing solid-state imaging device |
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JP2013025620A JP6110154B2 (ja) | 2013-02-13 | 2013-02-13 | 固体撮像装置及び固体撮像装置の製造方法 |
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JP2014154821A JP2014154821A (ja) | 2014-08-25 |
JP6110154B2 true JP6110154B2 (ja) | 2017-04-05 |
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JP2013025620A Active JP6110154B2 (ja) | 2013-02-13 | 2013-02-13 | 固体撮像装置及び固体撮像装置の製造方法 |
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US (1) | US9749561B2 (ja) |
EP (1) | EP2958147B1 (ja) |
JP (1) | JP6110154B2 (ja) |
KR (1) | KR102128639B1 (ja) |
CN (1) | CN104995735B (ja) |
TW (1) | TWI652809B (ja) |
WO (1) | WO2014126100A1 (ja) |
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TW202031539A (zh) * | 2019-02-25 | 2020-09-01 | 先進光電科技股份有限公司 | 行動載具輔助系統 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US5298761A (en) | 1991-06-17 | 1994-03-29 | Nikon Corporation | Method and apparatus for exposure process |
US6048785A (en) * | 1997-06-16 | 2000-04-11 | Advanced Micro Devices, Inc. | Semiconductor fabrication method of combining a plurality of fields defined by a reticle image using segment stitching |
JP4271753B2 (ja) * | 1998-09-21 | 2009-06-03 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2001077343A (ja) * | 1999-09-01 | 2001-03-23 | Sony Corp | Ccd撮像素子の製造装置及び製造方法 |
JP2003179221A (ja) * | 2001-12-11 | 2003-06-27 | Mitsubishi Electric Corp | リニアイメージセンサの製造方法及びその構造 |
JP2003280173A (ja) * | 2002-03-26 | 2003-10-02 | Canon Inc | リソグラフィ用マスク及びそれを用いた半導体装置の製造方法及び半導体装置 |
JP4246964B2 (ja) | 2002-05-27 | 2009-04-02 | 浜松ホトニクス株式会社 | 固体撮像装置及び固体撮像装置アレイ |
US20090268983A1 (en) * | 2005-07-25 | 2009-10-29 | The Regents Of The University Of California | Digital imaging system and method using multiple digital image sensors to produce large high-resolution gapless mosaic images |
JP5214904B2 (ja) | 2007-04-12 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 固体撮像素子の製造方法 |
JP4462299B2 (ja) * | 2007-07-17 | 2010-05-12 | ソニー株式会社 | 撮像装置、および画像処理方法、並びにコンピュータ・プログラム |
US7737390B2 (en) * | 2008-01-14 | 2010-06-15 | Tower Semiconductor, Ltd. | Horizontal row drivers for CMOS image sensor with tiling on three edges |
JP5418810B2 (ja) * | 2008-02-14 | 2014-02-19 | ソニー株式会社 | クランプ制御方法、クランプ補正装置、イメージセンサ、および、電子機器 |
JP4968227B2 (ja) * | 2008-10-03 | 2012-07-04 | 三菱電機株式会社 | イメージセンサ及びその駆動方法 |
US20120113213A1 (en) * | 2010-11-05 | 2012-05-10 | Teledyne Dalsa, Inc. | Wide format sensor |
US8866890B2 (en) * | 2010-11-05 | 2014-10-21 | Teledyne Dalsa, Inc. | Multi-camera |
US8692916B2 (en) | 2011-02-24 | 2014-04-08 | Teledyne Dalsa, Inc. | Continuous clocking mode for TDI binning operation of CCD image sensor |
JP5917883B2 (ja) * | 2011-11-02 | 2016-05-18 | 浜松ホトニクス株式会社 | 固体撮像装置 |
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- 2014-02-12 KR KR1020157017814A patent/KR102128639B1/ko active IP Right Grant
- 2014-02-12 US US14/766,788 patent/US9749561B2/en active Active
- 2014-02-12 EP EP14751421.0A patent/EP2958147B1/en active Active
- 2014-02-12 WO PCT/JP2014/053185 patent/WO2014126100A1/ja active Application Filing
- 2014-02-12 CN CN201480008752.0A patent/CN104995735B/zh active Active
- 2014-02-13 TW TW103104780A patent/TWI652809B/zh active
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Publication number | Publication date |
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CN104995735A (zh) | 2015-10-21 |
EP2958147A4 (en) | 2016-09-28 |
TWI652809B (zh) | 2019-03-01 |
CN104995735B (zh) | 2018-06-19 |
JP2014154821A (ja) | 2014-08-25 |
KR102128639B1 (ko) | 2020-06-30 |
WO2014126100A1 (ja) | 2014-08-21 |
EP2958147B1 (en) | 2019-06-12 |
EP2958147A1 (en) | 2015-12-23 |
KR20150120334A (ko) | 2015-10-27 |
US9749561B2 (en) | 2017-08-29 |
US20150365613A1 (en) | 2015-12-17 |
TW201444072A (zh) | 2014-11-16 |
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