JP6106690B2 - 交換可能な磁石パック - Google Patents
交換可能な磁石パック Download PDFInfo
- Publication number
- JP6106690B2 JP6106690B2 JP2014546160A JP2014546160A JP6106690B2 JP 6106690 B2 JP6106690 B2 JP 6106690B2 JP 2014546160 A JP2014546160 A JP 2014546160A JP 2014546160 A JP2014546160 A JP 2014546160A JP 6106690 B2 JP6106690 B2 JP 6106690B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- inserts
- insert
- template
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001220 stainless steel Inorganic materials 0.000 claims description 24
- 239000010935 stainless steel Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000004677 Nylon Substances 0.000 claims description 11
- 229920001778 nylon Polymers 0.000 claims description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 229910000828 alnico Inorganic materials 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 claims description 7
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- -1 but not limited to Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0273—Magnetic circuits with PM for magnetic field generation
- H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
- H01F7/0284—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49947—Assembling or joining by applying separate fastener
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Physical Vapour Deposition (AREA)
- Prostheses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/316,358 US9347129B2 (en) | 2011-12-09 | 2011-12-09 | Interchangeable magnet pack |
| US13/316,358 | 2011-12-09 | ||
| PCT/US2012/068635 WO2013086466A1 (en) | 2011-12-09 | 2012-12-07 | Interchangeable magnet pack |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015509138A JP2015509138A (ja) | 2015-03-26 |
| JP2015509138A5 JP2015509138A5 (enExample) | 2016-01-28 |
| JP6106690B2 true JP6106690B2 (ja) | 2017-04-05 |
Family
ID=48570988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014546160A Expired - Fee Related JP6106690B2 (ja) | 2011-12-09 | 2012-12-07 | 交換可能な磁石パック |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9347129B2 (enExample) |
| EP (1) | EP2788524A4 (enExample) |
| JP (1) | JP6106690B2 (enExample) |
| KR (1) | KR20140138597A (enExample) |
| CN (1) | CN104603325A (enExample) |
| SG (1) | SG11201403053UA (enExample) |
| TW (1) | TW201339343A (enExample) |
| WO (1) | WO2013086466A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573500B2 (en) * | 2011-12-09 | 2020-02-25 | Seagate Technology Llc | Interchangeable magnet pack |
| FR3064423B1 (fr) | 2017-03-22 | 2019-11-15 | Whylot Sas | Rotor pour moteur ou generatrice electromagnetique a structure alveolaire comportant des alveoles pour le logement d'aimants respectifs |
| US11322338B2 (en) * | 2017-08-31 | 2022-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sputter target magnet |
| FR3077414B1 (fr) * | 2018-01-26 | 2022-03-11 | Whylot Sas | Aimant unitaire a configuration ovoide et structure d'aimant a plusieurs aimants unitaires |
| GB201815216D0 (en) * | 2018-09-18 | 2018-10-31 | Spts Technologies Ltd | Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition |
| US11772812B1 (en) * | 2020-09-09 | 2023-10-03 | United States Of America As Represented By The Secretary Of The Air Force | Magnetic mobile aircraft cover |
| US12014912B2 (en) * | 2021-05-05 | 2024-06-18 | Taiwan Semiconductor Manufacturing Company Limited | Apparatus and method for physical vapor deposition |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3386568A (en) * | 1967-06-22 | 1968-06-04 | Ruby L. Harmon | Magnet kit |
| DE3727901A1 (de) | 1987-08-21 | 1989-03-02 | Leybold Ag | Zerstaeubungskathode nach dem magnetronprinzip |
| JPH04218905A (ja) | 1990-03-23 | 1992-08-10 | Unitika Ltd | 薄膜状磁性材料及びその製造方法 |
| US5407551A (en) | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
| JP3834111B2 (ja) * | 1996-10-16 | 2006-10-18 | 松下電器産業株式会社 | マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット |
| GB9718947D0 (en) * | 1997-09-05 | 1997-11-12 | Nordiko Ltd | Vacuum sputtering apparatus |
| US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| US6306265B1 (en) | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
| US6299740B1 (en) * | 2000-01-19 | 2001-10-09 | Veeco Instrument, Inc. | Sputtering assembly and target therefor |
| KR100345924B1 (ko) * | 2000-01-24 | 2002-07-27 | 한전건 | 평판 마그네트론 스퍼터링 장치 |
| US6406599B1 (en) * | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
| JP4411512B2 (ja) | 2003-08-07 | 2010-02-10 | アイシン精機株式会社 | 超電導磁場発生装置、その励磁方法、超電導磁場発生装置を用いたスパッタリング成膜装置、強磁性体着脱治具 |
| US7018515B2 (en) * | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
| KR101243068B1 (ko) | 2005-02-02 | 2013-03-13 | 히타치 긴조쿠 가부시키가이샤 | 마그네트론 스퍼터링용 자기 회로 장치 및 그 제조 방법 |
| DE102005019100B4 (de) | 2005-04-25 | 2009-02-12 | Steag Hamatech Ag | Magnetsystem für eine Zerstäubungskathode |
| US20070108041A1 (en) * | 2005-11-11 | 2007-05-17 | Guo George X | Magnetron source having increased usage life |
| US8557094B2 (en) * | 2006-10-05 | 2013-10-15 | Applied Materials, Inc. | Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
| JP5717444B2 (ja) * | 2008-06-26 | 2015-05-13 | 株式会社アルバック | カソードユニット及びこのカソードユニットを備えたスパッタリング装置 |
| US20120097534A1 (en) * | 2008-08-29 | 2012-04-26 | Ulvac, Inc. | Magnetron sputtering cathode and film formation apparatus |
| US8721796B2 (en) * | 2008-10-23 | 2014-05-13 | Applied Materials, Inc. | Plasma cleaning apparatus and method |
| CN101851746A (zh) * | 2009-04-03 | 2010-10-06 | 鸿富锦精密工业（深圳）有限公司 | 磁控式溅镀靶及磁控式溅镀系统 |
-
2011
- 2011-12-09 US US13/316,358 patent/US9347129B2/en not_active Expired - Fee Related
-
2012
- 2012-12-07 KR KR1020147018954A patent/KR20140138597A/ko not_active Withdrawn
- 2012-12-07 CN CN201280069500.XA patent/CN104603325A/zh active Pending
- 2012-12-07 WO PCT/US2012/068635 patent/WO2013086466A1/en not_active Ceased
- 2012-12-07 JP JP2014546160A patent/JP6106690B2/ja not_active Expired - Fee Related
- 2012-12-07 SG SG11201403053UA patent/SG11201403053UA/en unknown
- 2012-12-07 TW TW101146177A patent/TW201339343A/zh unknown
- 2012-12-07 EP EP12856309.5A patent/EP2788524A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US9347129B2 (en) | 2016-05-24 |
| KR20140138597A (ko) | 2014-12-04 |
| CN104603325A (zh) | 2015-05-06 |
| EP2788524A1 (en) | 2014-10-15 |
| WO2013086466A1 (en) | 2013-06-13 |
| US20130146453A1 (en) | 2013-06-13 |
| JP2015509138A (ja) | 2015-03-26 |
| SG11201403053UA (en) | 2014-09-26 |
| EP2788524A4 (en) | 2015-08-26 |
| TW201339343A (zh) | 2013-10-01 |
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