CN104603325A - 可互换磁体组 - Google Patents

可互换磁体组 Download PDF

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Publication number
CN104603325A
CN104603325A CN201280069500.XA CN201280069500A CN104603325A CN 104603325 A CN104603325 A CN 104603325A CN 201280069500 A CN201280069500 A CN 201280069500A CN 104603325 A CN104603325 A CN 104603325A
Authority
CN
China
Prior art keywords
magnetic
inserts
insert
length
interchangeable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280069500.XA
Other languages
English (en)
Chinese (zh)
Inventor
T·H·胡
W·S·卡瑟拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of CN104603325A publication Critical patent/CN104603325A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H01F7/0284—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49947—Assembling or joining by applying separate fastener

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
CN201280069500.XA 2011-12-09 2012-12-07 可互换磁体组 Pending CN104603325A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/316,358 2011-12-09
US13/316,358 US9347129B2 (en) 2011-12-09 2011-12-09 Interchangeable magnet pack
PCT/US2012/068635 WO2013086466A1 (en) 2011-12-09 2012-12-07 Interchangeable magnet pack

Publications (1)

Publication Number Publication Date
CN104603325A true CN104603325A (zh) 2015-05-06

Family

ID=48570988

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280069500.XA Pending CN104603325A (zh) 2011-12-09 2012-12-07 可互换磁体组

Country Status (8)

Country Link
US (1) US9347129B2 (enExample)
EP (1) EP2788524A4 (enExample)
JP (1) JP6106690B2 (enExample)
KR (1) KR20140138597A (enExample)
CN (1) CN104603325A (enExample)
SG (1) SG11201403053UA (enExample)
TW (1) TW201339343A (enExample)
WO (1) WO2013086466A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110447160A (zh) * 2017-03-22 2019-11-12 万络机电公司 具有多个一体化在网格结构中的单元磁体的磁体结构
CN111868855A (zh) * 2018-01-26 2020-10-30 万络公司 具有卵形构造的一体磁体和包括多个一体磁体的磁体结构

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573500B2 (en) * 2011-12-09 2020-02-25 Seagate Technology Llc Interchangeable magnet pack
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
GB201815216D0 (en) 2018-09-18 2018-10-31 Spts Technologies Ltd Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition
US11772812B1 (en) * 2020-09-09 2023-10-03 United States Of America As Represented By The Secretary Of The Air Force Magnetic mobile aircraft cover
US12014912B2 (en) * 2021-05-05 2024-06-18 Taiwan Semiconductor Manufacturing Company Limited Apparatus and method for physical vapor deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132576A (en) * 1997-09-05 2000-10-17 Nordiko Limited Vacuum sputtering apparatus

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US3386568A (en) * 1967-06-22 1968-06-04 Ruby L. Harmon Magnet kit
DE3727901A1 (de) 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
JPH04218905A (ja) 1990-03-23 1992-08-10 Unitika Ltd 薄膜状磁性材料及びその製造方法
US5407551A (en) 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
JP3834111B2 (ja) * 1996-10-16 2006-10-18 松下電器産業株式会社 マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6299740B1 (en) * 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
KR100345924B1 (ko) * 2000-01-24 2002-07-27 한전건 평판 마그네트론 스퍼터링 장치
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
JP4411512B2 (ja) 2003-08-07 2010-02-10 アイシン精機株式会社 超電導磁場発生装置、その励磁方法、超電導磁場発生装置を用いたスパッタリング成膜装置、強磁性体着脱治具
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
KR101243068B1 (ko) 2005-02-02 2013-03-13 히타치 긴조쿠 가부시키가이샤 마그네트론 스퍼터링용 자기 회로 장치 및 그 제조 방법
DE102005019100B4 (de) 2005-04-25 2009-02-12 Steag Hamatech Ag Magnetsystem für eine Zerstäubungskathode
US20070108041A1 (en) * 2005-11-11 2007-05-17 Guo George X Magnetron source having increased usage life
US8557094B2 (en) * 2006-10-05 2013-10-15 Applied Materials, Inc. Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum
JP5717444B2 (ja) * 2008-06-26 2015-05-13 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置
TWI431143B (zh) * 2008-08-29 2014-03-21 Ulvac Inc 磁控濺鍍陰極及成膜裝置
US8721796B2 (en) * 2008-10-23 2014-05-13 Applied Materials, Inc. Plasma cleaning apparatus and method
CN101851746A (zh) * 2009-04-03 2010-10-06 鸿富锦精密工业（深圳）有限公司 磁控式溅镀靶及磁控式溅镀系统

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132576A (en) * 1997-09-05 2000-10-17 Nordiko Limited Vacuum sputtering apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110447160A (zh) * 2017-03-22 2019-11-12 万络机电公司 具有多个一体化在网格结构中的单元磁体的磁体结构
CN110447161A (zh) * 2017-03-22 2019-11-12 万络机电公司 包括用于容置单元磁体的网格结构的径向通量式电磁发动机或发电机的转子
CN110462981A (zh) * 2017-03-22 2019-11-15 万络机电公司 具有多个呈现接头的形式的单元磁体的磁体结构
CN111868855A (zh) * 2018-01-26 2020-10-30 万络公司 具有卵形构造的一体磁体和包括多个一体磁体的磁体结构
CN111868855B (zh) * 2018-01-26 2022-03-22 万络公司 具有卵形构造的一体磁体和包括多个一体磁体的磁体结构

Also Published As

Publication number Publication date
KR20140138597A (ko) 2014-12-04
EP2788524A1 (en) 2014-10-15
JP2015509138A (ja) 2015-03-26
EP2788524A4 (en) 2015-08-26
SG11201403053UA (en) 2014-09-26
US20130146453A1 (en) 2013-06-13
JP6106690B2 (ja) 2017-04-05
WO2013086466A1 (en) 2013-06-13
TW201339343A (zh) 2013-10-01
US9347129B2 (en) 2016-05-24

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150506