TW201339343A - 可互換之磁鐵組 - Google Patents

可互換之磁鐵組 Download PDF

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Publication number
TW201339343A
TW201339343A TW101146177A TW101146177A TW201339343A TW 201339343 A TW201339343 A TW 201339343A TW 101146177 A TW101146177 A TW 101146177A TW 101146177 A TW101146177 A TW 101146177A TW 201339343 A TW201339343 A TW 201339343A
Authority
TW
Taiwan
Prior art keywords
magnetic
inserts
insert
template
interchangeable
Prior art date
Application number
TW101146177A
Other languages
English (en)
Chinese (zh)
Inventor
Toon Hai Foo
Thomas Patrick Nolan
Walter Stanley Kassela
Original Assignee
Seagate Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology Llc filed Critical Seagate Technology Llc
Publication of TW201339343A publication Critical patent/TW201339343A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00Magnets
    • H01F7/02Permanent magnets [PM]
    • H01F7/0273Magnetic circuits with PM for magnetic field generation
    • H01F7/0278Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H01F7/0284Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452Magnet distribution
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49826Assembling or joining
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49826Assembling or joining
    • Y10T29/49947Assembling or joining by applying separate fastener

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
TW101146177A 2011-12-09 2012-12-07 可互換之磁鐵組 TW201339343A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/316,358 US9347129B2 (en) 2011-12-09 2011-12-09 Interchangeable magnet pack

Publications (1)

Publication Number Publication Date
TW201339343A true TW201339343A (zh) 2013-10-01

Family

ID=48570988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101146177A TW201339343A (zh) 2011-12-09 2012-12-07 可互換之磁鐵組

Country Status (8)

Country Link
US (1) US9347129B2 (enExample)
EP (1) EP2788524A4 (enExample)
JP (1) JP6106690B2 (enExample)
KR (1) KR20140138597A (enExample)
CN (1) CN104603325A (enExample)
SG (1) SG11201403053UA (enExample)
TW (1) TW201339343A (enExample)
WO (1) WO2013086466A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573500B2 (en) * 2011-12-09 2020-02-25 Seagate Technology Llc Interchangeable magnet pack
FR3064423B1 (fr) 2017-03-22 2019-11-15 Whylot Sas Rotor pour moteur ou generatrice electromagnetique a structure alveolaire comportant des alveoles pour le logement d'aimants respectifs
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
FR3077414B1 (fr) * 2018-01-26 2022-03-11 Whylot Sas Aimant unitaire a configuration ovoide et structure d'aimant a plusieurs aimants unitaires
GB201815216D0 (en) * 2018-09-18 2018-10-31 Spts Technologies Ltd Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition
US11772812B1 (en) * 2020-09-09 2023-10-03 United States Of America As Represented By The Secretary Of The Air Force Magnetic mobile aircraft cover
US12014912B2 (en) * 2021-05-05 2024-06-18 Taiwan Semiconductor Manufacturing Company Limited Apparatus and method for physical vapor deposition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386568A (en) * 1967-06-22 1968-06-04 Ruby L. Harmon Magnet kit
DE3727901A1 (de) 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
JPH04218905A (ja) 1990-03-23 1992-08-10 Unitika Ltd 薄膜状磁性材料及びその製造方法
US5407551A (en) 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
JP3834111B2 (ja) * 1996-10-16 2006-10-18 松下電器産業株式会社 マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット
GB9718947D0 (en) * 1997-09-05 1997-11-12 Nordiko Ltd Vacuum sputtering apparatus
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6299740B1 (en) * 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
KR100345924B1 (ko) * 2000-01-24 2002-07-27 한전건 평판 마그네트론 스퍼터링 장치
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
JP4411512B2 (ja) 2003-08-07 2010-02-10 アイシン精機株式会社 超電導磁場発生装置、その励磁方法、超電導磁場発生装置を用いたスパッタリング成膜装置、強磁性体着脱治具
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
KR101243068B1 (ko) 2005-02-02 2013-03-13 히타치 긴조쿠 가부시키가이샤 마그네트론 스퍼터링용 자기 회로 장치 및 그 제조 방법
DE102005019100B4 (de) 2005-04-25 2009-02-12 Steag Hamatech Ag Magnetsystem für eine Zerstäubungskathode
US20070108041A1 (en) * 2005-11-11 2007-05-17 Guo George X Magnetron source having increased usage life
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JP5717444B2 (ja) * 2008-06-26 2015-05-13 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置
US20120097534A1 (en) * 2008-08-29 2012-04-26 Ulvac, Inc. Magnetron sputtering cathode and film formation apparatus
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CN101851746A (zh) * 2009-04-03 2010-10-06 鸿富锦精密工业(深圳)有限公司 磁控式溅镀靶及磁控式溅镀系统

Also Published As

Publication number Publication date
US9347129B2 (en) 2016-05-24
KR20140138597A (ko) 2014-12-04
CN104603325A (zh) 2015-05-06
EP2788524A1 (en) 2014-10-15
WO2013086466A1 (en) 2013-06-13
US20130146453A1 (en) 2013-06-13
JP2015509138A (ja) 2015-03-26
SG11201403053UA (en) 2014-09-26
EP2788524A4 (en) 2015-08-26
JP6106690B2 (ja) 2017-04-05

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