JP6102842B2 - デスミア処理方法およびデスミア処理装置 - Google Patents
デスミア処理方法およびデスミア処理装置 Download PDFInfo
- Publication number
- JP6102842B2 JP6102842B2 JP2014133924A JP2014133924A JP6102842B2 JP 6102842 B2 JP6102842 B2 JP 6102842B2 JP 2014133924 A JP2014133924 A JP 2014133924A JP 2014133924 A JP2014133924 A JP 2014133924A JP 6102842 B2 JP6102842 B2 JP 6102842B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- gas
- processing gas
- desmear
- light transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims description 183
- 238000000034 method Methods 0.000 claims description 87
- 238000010926 purge Methods 0.000 claims description 50
- 230000005540 biological transmission Effects 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 238000002203 pretreatment Methods 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 22
- 238000000354 decomposition reaction Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- -1 chlorine gas (Cl 2 ) Chemical compound 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014133924A JP6102842B2 (ja) | 2014-06-30 | 2014-06-30 | デスミア処理方法およびデスミア処理装置 |
| US15/321,163 US20170156217A1 (en) | 2014-06-30 | 2015-03-19 | Desmear treatment device and desmear treatment method |
| PCT/JP2015/058190 WO2016002266A1 (ja) | 2014-06-30 | 2015-03-19 | デスミア処理装置およびデスミア処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014133924A JP6102842B2 (ja) | 2014-06-30 | 2014-06-30 | デスミア処理方法およびデスミア処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016012678A JP2016012678A (ja) | 2016-01-21 |
| JP2016012678A5 JP2016012678A5 (enExample) | 2016-12-08 |
| JP6102842B2 true JP6102842B2 (ja) | 2017-03-29 |
Family
ID=55018826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014133924A Active JP6102842B2 (ja) | 2014-06-30 | 2014-06-30 | デスミア処理方法およびデスミア処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20170156217A1 (enExample) |
| JP (1) | JP6102842B2 (enExample) |
| WO (1) | WO2016002266A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113518510B (zh) * | 2020-04-10 | 2022-10-11 | 南通深南电路有限公司 | 一种pcb板除胶装置和方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328081A (en) * | 1980-02-25 | 1982-05-04 | Micro-Plate, Inc. | Plasma desmearing apparatus and method |
| JPS6320833A (ja) * | 1986-07-14 | 1988-01-28 | Toshiba Corp | アツシング装置 |
| JPH05109674A (ja) * | 1991-10-18 | 1993-04-30 | Ushio Inc | レジスト膜の灰化方法と灰化装置 |
| JPH08180757A (ja) * | 1994-12-21 | 1996-07-12 | Nitto Denko Corp | 接点部の形成方法 |
| JPH10280151A (ja) * | 1997-04-08 | 1998-10-20 | Fujitsu Ltd | Cvd装置のクリーニング方法 |
| US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
| JP2010027702A (ja) * | 2008-07-16 | 2010-02-04 | Hitachi Kokusai Electric Inc | 基板処理装置及び薄膜生成方法 |
-
2014
- 2014-06-30 JP JP2014133924A patent/JP6102842B2/ja active Active
-
2015
- 2015-03-19 US US15/321,163 patent/US20170156217A1/en not_active Abandoned
- 2015-03-19 WO PCT/JP2015/058190 patent/WO2016002266A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016002266A1 (ja) | 2016-01-07 |
| US20170156217A1 (en) | 2017-06-01 |
| JP2016012678A (ja) | 2016-01-21 |
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