JP6088152B2 - 不揮発性メモリ、及び半導体装置 - Google Patents
不揮発性メモリ、及び半導体装置 Download PDFInfo
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- JP6088152B2 JP6088152B2 JP2012092459A JP2012092459A JP6088152B2 JP 6088152 B2 JP6088152 B2 JP 6088152B2 JP 2012092459 A JP2012092459 A JP 2012092459A JP 2012092459 A JP2012092459 A JP 2012092459A JP 6088152 B2 JP6088152 B2 JP 6088152B2
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- JP
- Japan
- Prior art keywords
- zener zap
- zener
- zap
- circuit
- nonvolatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015654 memory Effects 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000002184 metal Substances 0.000 claims description 43
- 101100365384 Mus musculus Eefsec gene Proteins 0.000 description 19
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 description 14
- 101001109689 Homo sapiens Nuclear receptor subfamily 4 group A member 3 Proteins 0.000 description 14
- 101000598778 Homo sapiens Protein OSCP1 Proteins 0.000 description 14
- 101001067395 Mus musculus Phospholipid scramblase 1 Proteins 0.000 description 14
- 102100022673 Nuclear receptor subfamily 4 group A member 3 Human genes 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 3
- 101000964762 Homo sapiens Zinc finger protein 569 Proteins 0.000 description 2
- 102100040654 Zinc finger protein 569 Human genes 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- HCUOEKSZWPGJIM-IYNMRSRQSA-N (e,2z)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N\O)\C(N)=O HCUOEKSZWPGJIM-IYNMRSRQSA-N 0.000 description 1
- 101100256584 Dictyostelium discoideum selk gene Proteins 0.000 description 1
- 101150098459 SELENOK gene Proteins 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Description
20〜2n 電極(カソード)
31〜3n 電極(アノード)
4 メタル配線(ノード0)
5,50〜5n ビア
61〜6n 書込み・読出し回路
10 不揮発性メモリ回路(PROM回路)
11 電源線
13,14,151〜15n 信号線
121〜12n ユニットセル(記憶素子部)
16 出力線
17 ディテクター
18 基準電源線(基準電位VSS)
20 書込み用電源供給回路
30 読出し用電源供給回路
db,rdb,sel1〜seln,selbk 信号
NMOS0〜NMOS7 トランジスタ(Nチャネルトランジスタ)
NOR0,NOR1 NOR回路
PMOS0〜PMOS3 トランジスタ(Pチャネルトランジスタ)
ZAP1〜ZAPn,ZAPk ツェナーザップ素子(ZapFuse)
Claims (7)
- カソード領域、アノード領域、及び前記カソード領域と前記アノード領域とが重なる混在領域を各々備えた複数のツェナーザップ素子と、
前記複数のツェナーザップ素子上に前記複数のツェナーザップ素子の各々の前記混在領域の全体を覆うように形成され、前記複数のツェナーザップ素子の各々のカソード領域に共通接続されたメタル配線と、
を備えた不揮発性メモリ。 - 前記複数のツェナーザップ素子の各々は、2つのカソード領域と、該2つのカソード領域間に形成された1つの前記アノード領域と、を備え、前記2つのカソード領域の1つを隣のツェナーザップ素子間で共有した
請求項1記載の不揮発性メモリ。 - 前記メタル配線は、前記アノード領域と接続される配線よりも上層に形成された
請求項1または請求項2に記載の不揮発性メモリ。 - 一端がグランド線に接続され他端が前記ツェナーザップ素子のアノードに接続されたトランジスタを備え、
前記グランド線は、前記メタル配線に隣り合って形成された
請求項1から請求項3のいずれか1項に記載の不揮発性メモリ。 - 前記複数のツェナーザップ素子が、第1の方向に連続して配置される第1のツェナーザップ素子群と、
前記第1のツェナーザップ素子群とは別の複数のツェナーザップ素子が、第1の方向に連続して配置される第2のツェナーザップ素子群と、を備え、
前記メタル配線は、前記第1のツェナーザップ素子群と前記第2のツェナーザップ素子群に亘って形成される
請求項1から請求項4のいずれか1項に記載の不揮発性メモリ。 - 一端がグランド線に接続され、他端が前記ツェナーザップ素子のアノードに接続されたトランジスタを備え、
前記グランド線は、前記第1の方向に亘って形成されると共に複数形成され
前記メタル配線は、前記グランド線間に配置される
請求項5記載の不揮発性メモリ。 - 請求項1から請求項6のいずれか1項に記載の不揮発性メモリと、該不揮発性メモリを用いてデータの書込み及び読出しを行なう中央処理装置と、を備えた半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012092459A JP6088152B2 (ja) | 2012-04-13 | 2012-04-13 | 不揮発性メモリ、及び半導体装置 |
CN201310126527.4A CN103377703B (zh) | 2012-04-13 | 2013-04-12 | 非易失性存储器及半导体装置 |
US13/862,290 US9202589B2 (en) | 2012-04-13 | 2013-04-12 | Non-volatile memory and semiconductor device |
US14/930,827 US9461056B2 (en) | 2012-04-13 | 2015-11-03 | Non-volatile memory and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012092459A JP6088152B2 (ja) | 2012-04-13 | 2012-04-13 | 不揮発性メモリ、及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013222773A JP2013222773A (ja) | 2013-10-28 |
JP6088152B2 true JP6088152B2 (ja) | 2017-03-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012092459A Active JP6088152B2 (ja) | 2012-04-13 | 2012-04-13 | 不揮発性メモリ、及び半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9202589B2 (ja) |
JP (1) | JP6088152B2 (ja) |
CN (1) | CN103377703B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6103815B2 (ja) * | 2012-04-13 | 2017-03-29 | ラピスセミコンダクタ株式会社 | 不揮発性メモリ回路、及び半導体装置 |
CN114551238A (zh) * | 2022-04-28 | 2022-05-27 | 广州粤芯半导体技术有限公司 | 集成在半导体结构中的烧录器的制作方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126962A (en) * | 1980-03-11 | 1981-10-05 | Nippon Telegr & Teleph Corp <Ntt> | Field programmable array semiconductor device |
US4451839A (en) * | 1980-09-12 | 1984-05-29 | National Semiconductor Corporation | Bilateral zener trim |
JPS59132159A (ja) * | 1983-01-18 | 1984-07-30 | Nec Corp | 接合破壊書込み型半導体記憶装置 |
JPS61240673A (ja) * | 1985-04-18 | 1986-10-25 | Nec Corp | 接合短絡型プログラマブルリ−ドオンリ−メモリ |
JPH04348068A (ja) * | 1991-03-18 | 1992-12-03 | Toshiba Corp | 半導体記憶装置 |
US5818749A (en) * | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
JP3802239B2 (ja) | 1998-08-17 | 2006-07-26 | 株式会社東芝 | 半導体集積回路 |
JP3349475B2 (ja) | 1999-07-23 | 2002-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2002164513A (ja) * | 2000-11-28 | 2002-06-07 | Nippon Precision Circuits Inc | 半導体不揮発性メモリ装置及びその書込み方法 |
DE10163484A1 (de) * | 2001-12-21 | 2003-07-10 | Austriamicrosystems Ag | Zenerdiode, Zenerdiodenschaltung und Verfahren zur Herstellung einer Zenerdiode |
JP4136372B2 (ja) | 2002-01-04 | 2008-08-20 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP2005182899A (ja) | 2003-12-18 | 2005-07-07 | Matsushita Electric Ind Co Ltd | ワンタイムprom回路 |
US7145255B2 (en) * | 2004-08-26 | 2006-12-05 | Micrel, Incorporated | Lateral programmable polysilicon structure incorporating polysilicon blocking diode |
CN101452938B (zh) * | 2007-11-30 | 2010-11-03 | 上海华虹Nec电子有限公司 | 一次可编程非挥发性存储器单元 |
JP4482039B2 (ja) * | 2008-01-11 | 2010-06-16 | 株式会社東芝 | 抵抗変化型メモリ |
JP2009283602A (ja) * | 2008-05-21 | 2009-12-03 | Toshiba Corp | 不揮発性半導体メモリ |
US9331211B2 (en) * | 2009-08-28 | 2016-05-03 | X-Fab Semiconductor Foundries Ag | PN junctions and methods |
-
2012
- 2012-04-13 JP JP2012092459A patent/JP6088152B2/ja active Active
-
2013
- 2013-04-12 US US13/862,290 patent/US9202589B2/en active Active
- 2013-04-12 CN CN201310126527.4A patent/CN103377703B/zh active Active
-
2015
- 2015-11-03 US US14/930,827 patent/US9461056B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103377703B (zh) | 2019-03-15 |
US20130272051A1 (en) | 2013-10-17 |
JP2013222773A (ja) | 2013-10-28 |
US9202589B2 (en) | 2015-12-01 |
CN103377703A (zh) | 2013-10-30 |
US9461056B2 (en) | 2016-10-04 |
US20160056163A1 (en) | 2016-02-25 |
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