JP6081688B2 - 有機発光表示装置 - Google Patents
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- JP6081688B2 JP6081688B2 JP2010226444A JP2010226444A JP6081688B2 JP 6081688 B2 JP6081688 B2 JP 6081688B2 JP 2010226444 A JP2010226444 A JP 2010226444A JP 2010226444 A JP2010226444 A JP 2010226444A JP 6081688 B2 JP6081688 B2 JP 6081688B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0443—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
Description
101、201、301、401、501、601 基板
102、202、302、402、502、602 バッファ層
103、203、303、405、505、605 ゲート電極
104、204、304、404、504、604 ゲート絶縁層
105、205、305、403、503、603 活性層
106、206、306 エッチングストッパー
406、506、606 層間絶縁層
109、409 平坦化層
110、201、310、410、510 第1電極
111、211、311、411、511、611 画素定義層
112、212、312、412、512、612 中間層
113、213、313、413、513、613 第2電極
Claims (12)
- 基板と、
前記基板上に配置されると共に、活性層、ゲート電極、ゲート絶縁層、ソース及びドレイン電極を有する薄膜トランジスタと、
前記ソース電極または前記ドレイン電極と電気的に連結される第1電極と、
前記第1電極と対向するように配置された第2電極と、
前記第1電極と前記第2電極との間に配置されると共に、有機発光層を有する中間層と、を備える有機発光表示装置であって、
前記ゲート絶縁層は、前記ゲート電極と前記活性層とを絶縁するように配置され、複数の離隔したパターン部を備え、
前記第1電極上に窪んだ開口部(窪みの縁部に斜面部分がある場合は、当該斜面部分を含めて開口部という)を備え、前記ゲート絶縁層を覆うように形成される画素定義層が配置され、前記中間層は、前記開口部を通じて前記第1電極と電気的に連結され、
前記ソース電極又は前記ドレイン電極は、前記ゲート絶縁層の少なくとも側面部をカバーするように形成されており、
前記基板の厚さ方向と平行な方向を基準に、
前記有機発光表示装置は、複数の副画素を含み、
前記複数の副画素それぞれは、前記薄膜トランジスタを備え、
前記ゲート絶縁層の複数の離隔したパターン部は、少なくとも前記複数の副画素それぞれに対応するように互いに離隔したパターン部を含み、
前記ゲート絶縁層の複数の離隔したパターン部は、スキャンラインとデータラインとが重なる部分及びスキャンラインと電源ラインとが重なる部分に配置される複数の離隔したパターン部を備え、
前記スキャンラインとデータラインとが重なる部分及びスキャンラインと電源ラインとが重なる部分に配置される複数の離隔したパターン部は、前記複数の副画素それぞれに対応するパターン部と離隔する有機発光表示装置。 - 前記有機発光表示装置は複数の副画素を備え、
前記各副画素には少なくとも一つの前記パターン部が配置される請求項1に記載の有機発光表示装置。 - 前記基板上に前記ゲート電極が配置され、前記ゲート電極上に前記ゲート絶縁層が配置され、前記ゲート絶縁層上に前記活性層が配置され、前記活性層上に前記ソース電極及びドレイン電極が配置され、
前記活性層と前記ソース電極及び前記ドレイン電極との間に配置され、前記活性層の所定の部分を露出させるようにパターニングされたエッチングストッパーをさらに備える請求項1に記載の有機発光表示装置。 - 前記基板の厚さ方向を基準に、前記エッチングストッパーの外郭エッジは前記ゲート絶縁層の領域から外れない請求項3に記載の有機発光表示装置。
- 前記薄膜トランジスタ上に、絶縁材料からなってコンタクトホールを備える平坦化層が配置され、前記第1電極は前記平坦化層上に配置され、前記コンタクトホールを通じて前記ソース電極または前記ドレイン電極と連結される、請求項3に記載の有機発光表示装置。
- 前記第1電極と前記ゲート電極とは同一層上に形成される請求項3に記載の有機発光表示装置。
- 前記基板上に前記活性層が配置され、前記活性層上に前記ゲート絶縁層が配置され、前記ゲート絶縁層上に前記ゲート電極が配置され、前記ゲート電極上に前記ソース電極及び前記ドレイン電極が配置され、
前記ゲート電極と前記ソース電極及び前記ドレイン電極との間に配置され、前記活性層の所定の部分を露出させるようにパターニングされた層間絶縁層をさらに備える請求項1に記載の有機発光表示装置。 - 前記基板の厚さ方向を基準に、前記層間絶縁層の外郭エッジは前記ゲート絶縁層の領域から外れない請求項7に記載の有機発光表示装置。
- 前記薄膜トランジスタ上に、絶縁材料からなると共にコンタクトホールを有する平坦化層が配置され、前記第1電極は前記平坦化層上に配置され、前記コンタクトホールを通じて前記ソース電極または前記ドレイン電極と連結される、請求項7に記載の有機発光表示装置。
- 前記第1電極と前記活性層とは同一層上に形成される請求項7に記載の有機発光表示装置。
- 前記ソース電極及びドレイン電極のうちいずれか一つの電極は、一方向に延びると共に前記第1電極と一体に形成される請求項1に記載の有機発光表示装置。
- 前記基板は柔軟な素材で形成される請求項1に記載の有機発光表示装置。
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