JP6080870B2 - 溶液プロセス用有機半導体材料及び有機半導体デバイス - Google Patents

溶液プロセス用有機半導体材料及び有機半導体デバイス Download PDF

Info

Publication number
JP6080870B2
JP6080870B2 JP2014558587A JP2014558587A JP6080870B2 JP 6080870 B2 JP6080870 B2 JP 6080870B2 JP 2014558587 A JP2014558587 A JP 2014558587A JP 2014558587 A JP2014558587 A JP 2014558587A JP 6080870 B2 JP6080870 B2 JP 6080870B2
Authority
JP
Japan
Prior art keywords
dntt
organic semiconductor
compound
semiconductor material
alkyl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014558587A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2014115749A1 (ja
Inventor
和男 瀧宮
和男 瀧宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Kayaku Co Ltd
Original Assignee
Nippon Kayaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kayaku Co Ltd filed Critical Nippon Kayaku Co Ltd
Publication of JPWO2014115749A1 publication Critical patent/JPWO2014115749A1/ja
Application granted granted Critical
Publication of JP6080870B2 publication Critical patent/JP6080870B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014558587A 2013-01-22 2014-01-22 溶液プロセス用有機半導体材料及び有機半導体デバイス Active JP6080870B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013009153 2013-01-22
JP2013009153 2013-01-22
JP2013175678 2013-08-27
JP2013175678 2013-08-27
PCT/JP2014/051213 WO2014115749A1 (ja) 2013-01-22 2014-01-22 溶液プロセス用有機半導体材料及び有機半導体デバイス

Publications (2)

Publication Number Publication Date
JPWO2014115749A1 JPWO2014115749A1 (ja) 2017-01-26
JP6080870B2 true JP6080870B2 (ja) 2017-02-15

Family

ID=51227540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014558587A Active JP6080870B2 (ja) 2013-01-22 2014-01-22 溶液プロセス用有機半導体材料及び有機半導体デバイス

Country Status (5)

Country Link
JP (1) JP6080870B2 (ko)
KR (1) KR102101242B1 (ko)
CN (1) CN104956508B (ko)
TW (1) TW201444852A (ko)
WO (1) WO2014115749A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101703599B1 (ko) 2015-07-31 2017-02-07 현대자동차 주식회사 루프 레이저 브레이징 시스템
JP6654517B2 (ja) * 2016-06-21 2020-02-26 山本化成株式会社 有機トランジスタ
JP6910880B2 (ja) * 2016-08-03 2021-07-28 日本化薬株式会社 有機光電変換素子、有機光電変換素子用材料及びこれらを用いた有機撮像素子
JP6906357B2 (ja) * 2017-04-28 2021-07-21 日本化薬株式会社 撮像素子用光電変換素子
JP2018190755A (ja) * 2017-04-28 2018-11-29 日本化薬株式会社 撮像素子用光電変換素子
CN111655684B (zh) 2017-10-19 2023-07-07 Clap有限公司 用于有机电子材料的新型取代苯并萘噻吩化合物
WO2019101569A1 (en) * 2017-11-21 2019-05-31 Basf Se Sulfonium salts of dntt and related compounds as soluble photocleavable precursors for organic semiconductors for use in organic field-effect transistors
EP3762979A1 (en) 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
JP7241346B2 (ja) * 2019-05-21 2023-03-17 国立大学法人東北大学 芳香族化合物の製造方法
TWI844726B (zh) * 2019-09-17 2024-06-11 日商日本化藥股份有限公司 稠合多環芳香族化合物
JP7317301B2 (ja) * 2019-11-13 2023-07-31 日本化薬株式会社 有機半導体化合物及びその用途
CN110849252B (zh) * 2019-11-14 2021-06-18 东北师范大学 一种制备大面积可贴合半导体型接近传感器的方法
TW202136272A (zh) * 2019-12-10 2021-10-01 日商日本化藥股份有限公司 縮合多環芳香族化合物
WO2023189381A1 (ja) * 2022-03-30 2023-10-05 ソニーグループ株式会社 発光素子および電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2077590B1 (en) * 2006-10-20 2013-06-19 Nippon Kayaku Kabushiki Kaisha Field-effect transistor
WO2008050726A1 (fr) * 2006-10-25 2008-05-02 Hiroshima University Nouveau composé aromatique à cycle fusionne, son procédé de production et son utilisation
JP5428104B2 (ja) * 2008-05-23 2014-02-26 日本化薬株式会社 有機半導体組成物
CN102333780B (zh) * 2009-02-27 2014-10-29 日本化药株式会社 场效应晶体管
KR101599688B1 (ko) * 2011-02-25 2016-03-07 닛뽄 가야쿠 가부시키가이샤 신규 헤테로시클릭 화합물, 이를 위한 중간체 제조 방법, 및 이의 용도
US20130062598A1 (en) * 2011-09-12 2013-03-14 Hakan Usta Compounds Having Semiconducting Properties and Related Compositions and Devices

Also Published As

Publication number Publication date
CN104956508A (zh) 2015-09-30
JPWO2014115749A1 (ja) 2017-01-26
KR20150108918A (ko) 2015-09-30
WO2014115749A1 (ja) 2014-07-31
TW201444852A (zh) 2014-12-01
KR102101242B1 (ko) 2020-04-17
CN104956508B (zh) 2017-07-21

Similar Documents

Publication Publication Date Title
JP6080870B2 (ja) 溶液プロセス用有機半導体材料及び有機半導体デバイス
CN105102462B (zh) 含有氧族元素的有机化合物、其制造方法以及用途
WO2013039842A1 (en) Compounds having semiconducting properties and related compositions and devices
WO2011004869A1 (ja) 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス
TWI523857B (zh) Synthesis of Polycyclic Aromatic Compounds, Aromatic Polymers, and Aromatic Compounds
JP6332644B2 (ja) 化合物、高分子化合物、有機半導体材料、有機半導体デバイス、化合物の合成方法、高分子化合物の合成方法
KR20130021439A (ko) 치환기 이탈 화합물, 이로부터 형성되는 유기 반도체 재료, 이 유기 반도체 재료를 이용한 유기 전자 장치, 유기 박막 트랜지스터 및 표시 장치, 막형 제품의 제조 방법, pi-전자 공액 화합물 및 pi-전자 공액 화합물의 제조 방법
JP6793946B2 (ja) 自己組織化膜形成材料として有用なトリプチセン誘導体、その製造方法、それを用いた膜、当該膜の製造方法、及びそれを用いた電子デバイス
KR102001455B1 (ko) 반도체 조성물
EP3434679B1 (en) Organic compound, organic thin film, and electronic device
JP2006248982A (ja) ヘテロアセン化合物及びその製造方法
KR102564943B1 (ko) 유기 화합물, 유기 박막 및 전자 소자
JP5650107B2 (ja) チエノピラジン化合物、およびそれを含有した電界効果トランジスタ
JP5670216B2 (ja) 新規ビベンゾ[b]フラン化合物、並びに該化合物を含有してなる有機半導体材料及び有機半導体素子
JP2010083785A (ja) 平面性の高い分子構造を有する化合物およびこれを用いた有機トランジスタ
JP5637985B2 (ja) ジアザボロール化合物、およびそれを含有した電界効果トランジスタ
JP6069971B2 (ja) 有機膜の製造方法
CN109912630B (zh) 硒吩衍生物及其制备方法和在作为有机半导体材料方面的应用
JP7521742B2 (ja) 有機トランジスタ材料及び有機トランジスタ
EP3318559B1 (en) Synthetic method of fused heteroaromatic compound
KR102392669B1 (ko) 유기 화합물, 유기 박막 및 전자 소자
KR20220143703A (ko) 신규한 화합물 및 그 용도
JP6047969B2 (ja) ジチエノベンゾジチオフェン誘導体溶液及びこれを用いた有機半導体層
JP2013026591A (ja) 薄膜トランジスタ及びそれを用いた電子デバイス
JP2013026448A (ja) 薄膜トランジスタ及びそれを用いた電子デバイス

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170110

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170117

R150 Certificate of patent or registration of utility model

Ref document number: 6080870

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250