JP6080870B2 - 溶液プロセス用有機半導体材料及び有機半導体デバイス - Google Patents
溶液プロセス用有機半導体材料及び有機半導体デバイス Download PDFInfo
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- JP6080870B2 JP6080870B2 JP2014558587A JP2014558587A JP6080870B2 JP 6080870 B2 JP6080870 B2 JP 6080870B2 JP 2014558587 A JP2014558587 A JP 2014558587A JP 2014558587 A JP2014558587 A JP 2014558587A JP 6080870 B2 JP6080870 B2 JP 6080870B2
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- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000004896 high resolution mass spectrometry Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2013009153 | 2013-01-22 | ||
JP2013009153 | 2013-01-22 | ||
JP2013175678 | 2013-08-27 | ||
JP2013175678 | 2013-08-27 | ||
PCT/JP2014/051213 WO2014115749A1 (ja) | 2013-01-22 | 2014-01-22 | 溶液プロセス用有機半導体材料及び有機半導体デバイス |
Publications (2)
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JPWO2014115749A1 JPWO2014115749A1 (ja) | 2017-01-26 |
JP6080870B2 true JP6080870B2 (ja) | 2017-02-15 |
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JP2014558587A Active JP6080870B2 (ja) | 2013-01-22 | 2014-01-22 | 溶液プロセス用有機半導体材料及び有機半導体デバイス |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6080870B2 (ko) |
KR (1) | KR102101242B1 (ko) |
CN (1) | CN104956508B (ko) |
TW (1) | TW201444852A (ko) |
WO (1) | WO2014115749A1 (ko) |
Families Citing this family (14)
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KR101703599B1 (ko) | 2015-07-31 | 2017-02-07 | 현대자동차 주식회사 | 루프 레이저 브레이징 시스템 |
JP6654517B2 (ja) * | 2016-06-21 | 2020-02-26 | 山本化成株式会社 | 有機トランジスタ |
JP6910880B2 (ja) * | 2016-08-03 | 2021-07-28 | 日本化薬株式会社 | 有機光電変換素子、有機光電変換素子用材料及びこれらを用いた有機撮像素子 |
JP6906357B2 (ja) * | 2017-04-28 | 2021-07-21 | 日本化薬株式会社 | 撮像素子用光電変換素子 |
JP2018190755A (ja) * | 2017-04-28 | 2018-11-29 | 日本化薬株式会社 | 撮像素子用光電変換素子 |
CN111655684B (zh) | 2017-10-19 | 2023-07-07 | Clap有限公司 | 用于有机电子材料的新型取代苯并萘噻吩化合物 |
WO2019101569A1 (en) * | 2017-11-21 | 2019-05-31 | Basf Se | Sulfonium salts of dntt and related compounds as soluble photocleavable precursors for organic semiconductors for use in organic field-effect transistors |
EP3762979A1 (en) | 2018-03-07 | 2021-01-13 | Clap Co., Ltd. | Patterning method for preparing top-gate, bottom-contact organic field effect transistors |
JP7241346B2 (ja) * | 2019-05-21 | 2023-03-17 | 国立大学法人東北大学 | 芳香族化合物の製造方法 |
TWI844726B (zh) * | 2019-09-17 | 2024-06-11 | 日商日本化藥股份有限公司 | 稠合多環芳香族化合物 |
JP7317301B2 (ja) * | 2019-11-13 | 2023-07-31 | 日本化薬株式会社 | 有機半導体化合物及びその用途 |
CN110849252B (zh) * | 2019-11-14 | 2021-06-18 | 东北师范大学 | 一种制备大面积可贴合半导体型接近传感器的方法 |
TW202136272A (zh) * | 2019-12-10 | 2021-10-01 | 日商日本化藥股份有限公司 | 縮合多環芳香族化合物 |
WO2023189381A1 (ja) * | 2022-03-30 | 2023-10-05 | ソニーグループ株式会社 | 発光素子および電子機器 |
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EP2077590B1 (en) * | 2006-10-20 | 2013-06-19 | Nippon Kayaku Kabushiki Kaisha | Field-effect transistor |
WO2008050726A1 (fr) * | 2006-10-25 | 2008-05-02 | Hiroshima University | Nouveau composé aromatique à cycle fusionne, son procédé de production et son utilisation |
JP5428104B2 (ja) * | 2008-05-23 | 2014-02-26 | 日本化薬株式会社 | 有機半導体組成物 |
CN102333780B (zh) * | 2009-02-27 | 2014-10-29 | 日本化药株式会社 | 场效应晶体管 |
KR101599688B1 (ko) * | 2011-02-25 | 2016-03-07 | 닛뽄 가야쿠 가부시키가이샤 | 신규 헤테로시클릭 화합물, 이를 위한 중간체 제조 방법, 및 이의 용도 |
US20130062598A1 (en) * | 2011-09-12 | 2013-03-14 | Hakan Usta | Compounds Having Semiconducting Properties and Related Compositions and Devices |
-
2014
- 2014-01-22 CN CN201480005535.6A patent/CN104956508B/zh not_active Expired - Fee Related
- 2014-01-22 JP JP2014558587A patent/JP6080870B2/ja active Active
- 2014-01-22 TW TW103102269A patent/TW201444852A/zh unknown
- 2014-01-22 WO PCT/JP2014/051213 patent/WO2014115749A1/ja active Application Filing
- 2014-01-22 KR KR1020157022803A patent/KR102101242B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN104956508A (zh) | 2015-09-30 |
JPWO2014115749A1 (ja) | 2017-01-26 |
KR20150108918A (ko) | 2015-09-30 |
WO2014115749A1 (ja) | 2014-07-31 |
TW201444852A (zh) | 2014-12-01 |
KR102101242B1 (ko) | 2020-04-17 |
CN104956508B (zh) | 2017-07-21 |
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