JP6068171B2 - 試料の処理方法および試料処理装置 - Google Patents

試料の処理方法および試料処理装置 Download PDF

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Publication number
JP6068171B2
JP6068171B2 JP2013019066A JP2013019066A JP6068171B2 JP 6068171 B2 JP6068171 B2 JP 6068171B2 JP 2013019066 A JP2013019066 A JP 2013019066A JP 2013019066 A JP2013019066 A JP 2013019066A JP 6068171 B2 JP6068171 B2 JP 6068171B2
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processing
gas
sample
resist
processing chamber
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JP2013019066A
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Japanese (ja)
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JP2014150202A5 (https=
JP2014150202A (ja
Inventor
豊 高妻
豊 高妻
博昭 老泉
博昭 老泉
安井　尚輝
尚輝 安井
渡辺　成一
成一 渡辺
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2013019066A priority Critical patent/JP6068171B2/ja
Priority to US13/792,325 priority patent/US20140220489A1/en
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Publication of JP2014150202A5 publication Critical patent/JP2014150202A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP2013019066A 2013-02-04 2013-02-04 試料の処理方法および試料処理装置 Active JP6068171B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013019066A JP6068171B2 (ja) 2013-02-04 2013-02-04 試料の処理方法および試料処理装置
US13/792,325 US20140220489A1 (en) 2013-02-04 2013-03-11 Method for processing sample and sample processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019066A JP6068171B2 (ja) 2013-02-04 2013-02-04 試料の処理方法および試料処理装置

Publications (3)

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JP2014150202A JP2014150202A (ja) 2014-08-21
JP2014150202A5 JP2014150202A5 (https=) 2016-03-17
JP6068171B2 true JP6068171B2 (ja) 2017-01-25

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JP2013019066A Active JP6068171B2 (ja) 2013-02-04 2013-02-04 試料の処理方法および試料処理装置

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US (1) US20140220489A1 (https=)
JP (1) JP6068171B2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP6881120B2 (ja) * 2017-07-19 2021-06-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) * 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
TW202217929A (zh) * 2020-10-09 2022-05-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置及記錄媒體
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
KR20240136402A (ko) * 2022-01-20 2024-09-13 어플라이드 머티어리얼스, 인코포레이티드 국부화된 퍼지를 이용하는 저산소 주사 uv 소스

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379869B1 (en) * 1999-03-31 2002-04-30 Infineon Technologies Ag Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
JP2005197348A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 半導体製造装置及び半導体装置の製造方法
WO2011062162A1 (ja) * 2009-11-17 2011-05-26 株式会社日立ハイテクノロジーズ 試料処理装置、試料処理システム及び試料の処理方法
JP2012049305A (ja) * 2010-08-26 2012-03-08 Hitachi High-Technologies Corp 真空紫外光処理装置
US8529776B2 (en) * 2011-07-25 2013-09-10 Applied Materials, Inc. High lateral to vertical ratio etch process for device manufacturing
JP2013229454A (ja) * 2012-04-26 2013-11-07 Hitachi High-Technologies Corp 膜厚モニタを有するｖｕｖ処理装置および処理方法

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Publication number Publication date
US20140220489A1 (en) 2014-08-07
JP2014150202A (ja) 2014-08-21

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