JP6065408B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- JP6065408B2 JP6065408B2 JP2012103116A JP2012103116A JP6065408B2 JP 6065408 B2 JP6065408 B2 JP 6065408B2 JP 2012103116 A JP2012103116 A JP 2012103116A JP 2012103116 A JP2012103116 A JP 2012103116A JP 6065408 B2 JP6065408 B2 JP 6065408B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- resin
- light
- emitting element
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 229920005989 resin Polymers 0.000 claims description 232
- 239000011347 resin Substances 0.000 claims description 232
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 45
- 238000004062 sedimentation Methods 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 230000001376 precipitating effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000945 filler Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103116A JP6065408B2 (ja) | 2012-04-27 | 2012-04-27 | 発光装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103116A JP6065408B2 (ja) | 2012-04-27 | 2012-04-27 | 発光装置およびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016094145A Division JP2016139833A (ja) | 2016-05-09 | 2016-05-09 | 発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013232484A JP2013232484A (ja) | 2013-11-14 |
JP2013232484A5 JP2013232484A5 (ru) | 2015-06-11 |
JP6065408B2 true JP6065408B2 (ja) | 2017-01-25 |
Family
ID=49678693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012103116A Active JP6065408B2 (ja) | 2012-04-27 | 2012-04-27 | 発光装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6065408B2 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180137841A (ko) * | 2017-06-19 | 2018-12-28 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6657735B2 (ja) * | 2014-10-07 | 2020-03-04 | 日亜化学工業株式会社 | 発光装置 |
US10490711B2 (en) | 2014-10-07 | 2019-11-26 | Nichia Corporation | Light emitting device |
CN107615497B (zh) * | 2015-05-29 | 2019-05-21 | 西铁城电子株式会社 | 发光装置及其制造方法 |
JP6715593B2 (ja) * | 2015-12-18 | 2020-07-01 | シチズン電子株式会社 | 発光装置 |
JP6387954B2 (ja) * | 2015-12-24 | 2018-09-12 | 日亜化学工業株式会社 | 波長変換部材を用いた発光装置の製造方法 |
JP6685738B2 (ja) * | 2016-01-25 | 2020-04-22 | コーデンシ株式会社 | 発光装置 |
CN108780831B (zh) * | 2016-03-10 | 2022-01-11 | 亮锐控股有限公司 | Led模块 |
JP7372512B2 (ja) * | 2018-09-28 | 2023-11-01 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3546650B2 (ja) * | 1997-07-28 | 2004-07-28 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
JP2004119838A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | 光半導体装置の製造方法 |
JP2004288760A (ja) * | 2003-03-20 | 2004-10-14 | Stanley Electric Co Ltd | 多層led |
JP4539235B2 (ja) * | 2004-08-27 | 2010-09-08 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
JP4582773B2 (ja) * | 2004-09-14 | 2010-11-17 | スタンレー電気株式会社 | Led装置 |
JP4756841B2 (ja) * | 2004-09-29 | 2011-08-24 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
JP2008218511A (ja) * | 2007-02-28 | 2008-09-18 | Toyoda Gosei Co Ltd | 半導体発光装置及びその製造方法 |
US7777412B2 (en) * | 2007-03-22 | 2010-08-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Phosphor converted LED with improved uniformity and having lower phosphor requirements |
CN101809768B (zh) * | 2007-08-31 | 2012-04-25 | Lg伊诺特有限公司 | 发光器件封装 |
JP5286585B2 (ja) * | 2007-10-05 | 2013-09-11 | シャープ株式会社 | 発光装置 |
TW201003979A (en) * | 2008-07-11 | 2010-01-16 | Harvatek Corp | Light emitting diode chip packaging structure using sedimentation and manufacturing method thereof |
JP2011071242A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
-
2012
- 2012-04-27 JP JP2012103116A patent/JP6065408B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180137841A (ko) * | 2017-06-19 | 2018-12-28 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
KR102388371B1 (ko) * | 2017-06-19 | 2022-04-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
Also Published As
Publication number | Publication date |
---|---|
JP2013232484A (ja) | 2013-11-14 |
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