JP6062640B2 - 光伝導素子 - Google Patents

光伝導素子 Download PDF

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Publication number
JP6062640B2
JP6062640B2 JP2012047443A JP2012047443A JP6062640B2 JP 6062640 B2 JP6062640 B2 JP 6062640B2 JP 2012047443 A JP2012047443 A JP 2012047443A JP 2012047443 A JP2012047443 A JP 2012047443A JP 6062640 B2 JP6062640 B2 JP 6062640B2
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Japan
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semiconductor
layer
semiconductor layer
substrate
photoconductive element
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JP2012047443A
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English (en)
Japanese (ja)
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JP2012212868A5 (enExample
JP2012212868A (ja
Inventor
康介 加治木
康介 加治木
尾内　敏彦
敏彦 尾内
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Canon Inc
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Canon Inc
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Priority to JP2012047443A priority Critical patent/JP6062640B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2012047443A 2011-03-18 2012-03-03 光伝導素子 Active JP6062640B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012047443A JP6062640B2 (ja) 2011-03-18 2012-03-03 光伝導素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011061439 2011-03-18
JP2011061439 2011-03-18
JP2012047443A JP6062640B2 (ja) 2011-03-18 2012-03-03 光伝導素子

Publications (3)

Publication Number Publication Date
JP2012212868A JP2012212868A (ja) 2012-11-01
JP2012212868A5 JP2012212868A5 (enExample) 2015-04-09
JP6062640B2 true JP6062640B2 (ja) 2017-01-18

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US (1) US8835853B2 (enExample)
JP (1) JP6062640B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230420606A1 (en) * 2022-06-28 2023-12-28 National Tsing Hua University Method for manufacturing terahertz device

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US20140151581A1 (en) * 2012-12-03 2014-06-05 Yael Nemirovsky Terahertz source
JP6332980B2 (ja) * 2013-03-08 2018-05-30 キヤノン株式会社 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置
JP2014175598A (ja) * 2013-03-12 2014-09-22 Asahi Kasei Corp 化合物半導体積層体及び半導体装置
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP6306363B2 (ja) * 2014-02-14 2018-04-04 パイオニア株式会社 時間領域分光装置
RU2610222C1 (ru) * 2015-12-02 2017-02-08 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал для фотопроводящих антенн
JP6755590B2 (ja) * 2015-12-15 2020-09-16 国立大学法人東京工業大学 テラヘルツ検出センサ及びテラヘルツ画像測定装置
JP6705672B2 (ja) * 2016-03-17 2020-06-03 パイオニア株式会社 電磁波計測装置
RU2624612C1 (ru) * 2016-10-07 2017-07-04 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Полупроводниковая структура для фотопроводящих антенн
RU2671286C1 (ru) * 2017-09-22 2018-10-30 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Полупроводниковая структура для фотопроводящих антенн
JP7062481B2 (ja) * 2018-03-23 2022-05-06 パイオニア株式会社 電磁波計測装置
CN112204756B (zh) * 2018-05-29 2025-02-28 Iqe公司 在缓冲器上方形成的光电子器件
EP3907764A1 (de) * 2020-05-07 2021-11-10 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Anordnung für eine antenne zum erzeugen oder empfangen von terahertz-strahlung, antenne, terahertzsystem sowie verfahren zur herstellung einer anordnung für eine antenne
US11431236B2 (en) * 2020-08-18 2022-08-30 Meta Platforms Technologies, Llc Dynamically addressable high voltage optical transformer with integrated optically triggered switches
JP2020198448A (ja) * 2020-08-26 2020-12-10 パイオニア株式会社 光伝導素子及び計測装置
KR102458236B1 (ko) * 2021-08-25 2022-10-25 한국전자통신연구원 테라헤르츠 소자의 제조 방법
KR20230081463A (ko) * 2021-11-30 2023-06-07 삼성전자주식회사 광 소자용 기판 및 그 제조방법과 이 기판을 포함하는 광 소자 및 그 제조방법과 광 소자를 포함하는 전자장치

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JP3913253B2 (ja) 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
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JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
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JP5127430B2 (ja) 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230420606A1 (en) * 2022-06-28 2023-12-28 National Tsing Hua University Method for manufacturing terahertz device

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US20120235040A1 (en) 2012-09-20
US8835853B2 (en) 2014-09-16
JP2012212868A (ja) 2012-11-01

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