JP6057728B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP6057728B2
JP6057728B2 JP2013005613A JP2013005613A JP6057728B2 JP 6057728 B2 JP6057728 B2 JP 6057728B2 JP 2013005613 A JP2013005613 A JP 2013005613A JP 2013005613 A JP2013005613 A JP 2013005613A JP 6057728 B2 JP6057728 B2 JP 6057728B2
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JP
Japan
Prior art keywords
color filter
layer
filter layer
light receiving
forming
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Expired - Fee Related
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JP2013005613A
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English (en)
Japanese (ja)
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JP2014138067A5 (enExample
JP2014138067A (ja
Inventor
政樹 栗原
政樹 栗原
大輔 下山
大輔 下山
伊藤　正孝
正孝 伊藤
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013005613A priority Critical patent/JP6057728B2/ja
Priority to US14/148,063 priority patent/US9236413B2/en
Publication of JP2014138067A publication Critical patent/JP2014138067A/ja
Publication of JP2014138067A5 publication Critical patent/JP2014138067A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2013005613A 2013-01-16 2013-01-16 固体撮像装置の製造方法 Expired - Fee Related JP6057728B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013005613A JP6057728B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法
US14/148,063 US9236413B2 (en) 2013-01-16 2014-01-06 Manufacturing method of solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013005613A JP6057728B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014138067A JP2014138067A (ja) 2014-07-28
JP2014138067A5 JP2014138067A5 (enExample) 2016-02-12
JP6057728B2 true JP6057728B2 (ja) 2017-01-11

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JP2013005613A Expired - Fee Related JP6057728B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法

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US (1) US9236413B2 (enExample)
JP (1) JP6057728B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US11245823B2 (en) 2019-08-13 2022-02-08 Omnivision Technologies, Inc. Fully buried color filter array of image sensor
US10957731B1 (en) * 2019-10-04 2021-03-23 Visera Technologies Company Limited Sensor device and method for manufacturing the same
JP2021150837A (ja) * 2020-03-19 2021-09-27 株式会社リコー 固体撮像素子、画像読取装置、及び画像形成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4834941B2 (ja) * 2001-09-03 2011-12-14 ソニー株式会社 カラーフィルタおよびその製造方法
US7443005B2 (en) * 2004-06-10 2008-10-28 Tiawan Semiconductor Manufacturing Co., Ltd. Lens structures suitable for use in image sensors and method for making the same
JP5364989B2 (ja) * 2007-10-02 2013-12-11 ソニー株式会社 固体撮像装置およびカメラ
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
JP4835719B2 (ja) * 2008-05-22 2011-12-14 ソニー株式会社 固体撮像装置及び電子機器
JP2010067827A (ja) * 2008-09-11 2010-03-25 Fujifilm Corp 固体撮像素子及び撮像装置
MX2010007359A (es) * 2009-07-02 2011-06-02 Tay Hioknam Matriz de guia de luz para un sensor de imagen.
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
WO2011142065A1 (ja) * 2010-05-14 2011-11-17 パナソニック株式会社 固体撮像装置及びその製造方法

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Publication number Publication date
US9236413B2 (en) 2016-01-12
JP2014138067A (ja) 2014-07-28
US20140199801A1 (en) 2014-07-17

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