JP6054272B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6054272B2 JP6054272B2 JP2013191130A JP2013191130A JP6054272B2 JP 6054272 B2 JP6054272 B2 JP 6054272B2 JP 2013191130 A JP2013191130 A JP 2013191130A JP 2013191130 A JP2013191130 A JP 2013191130A JP 6054272 B2 JP6054272 B2 JP 6054272B2
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- 239000004065 semiconductor Substances 0.000 title claims description 219
- 239000012535 impurity Substances 0.000 claims description 94
- 230000007423 decrease Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 126
- 239000011800 void material Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Description
本実施形態の半導体装置は、第1導電型の第1の半導体層と、第1の半導体層内に設けられ、第1の半導体層に接する第1の側面と第1の底部を有し、内部に第1の空洞部を有し、第1の側面から第1の空洞部に向かって第2導電型の不純物濃度が低下する第2導電型の第2の半導体層と、を備える。さらに、第2の半導体層との間に第1の半導体層を間に挟んで第1の半導体層内に設けられ、第1の半導体層に接する第2の側面と第2の底部を有し、内部に第2の空洞部を有し、第2の側面から第2の空洞部に向かって第2導電型の不純物濃度が低下する第2導電型の第3の半導体層を、備える。
0.7≦W1N1/W2N2≦1.3
の関係が充足されることが望ましい。
本実施形態の半導体装置は、第2の半導体層および第3の半導体層の、第1の半導体層表面に平行な面での伸長方向が、<100>方向であること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略すする。
本実施形態の半導体装置は、第1の空洞部と第2の空洞部の第1の半導体層の表面に平行な方向の距離をD、第1の空洞部の下端と第2の空洞部の下端との第1の半導体層の表面に垂直な方向の距離をd1、第1の空洞部の上端と第2の空洞部の上端との第1の半導体層の表面に垂直な方向の距離をd2とする場合に、d1≦D、かつ、d2≦Dの関係を充足する点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
12 n−型半導体層(第1の半導体層)
14 p型半導体層(第2の半導体層)
14a 高濃度不純物領域
14b 低濃度不純物領域
16 底部(第1の底部)
18 側面(第1の側面)
20 空洞部(第1の空洞部)
24 p型半導体層(第3の半導体層)
24a 高濃度不純物領域
24b 低濃度不純物領域
26 底部(第2の底部)
28 側面(第2の側面)
30 空洞部(第2の空洞部)
100 MOSFET
200 MOSFET
300 MOSFET
Claims (5)
- 第1導電型の第1の半導体層と、
前記第1の半導体層内に設けられ、前記第1の半導体層に接する第1の側面と第1の底部を有し、内部に第1の空洞部を有し、前記第1の側面及び前記第1の底部から前記第1の空洞部に向かって第2導電型の不純物濃度が低下する第2導電型の第2の半導体層と、
前記第2の半導体層との間に前記第1の半導体層が位置するように前記第1の半導体層内に設けられ、前記第1の半導体層に接する第2の側面と第2の底部を有し、内部に第2の空洞部を有し、前記第2の側面及び第2の底部から前記第2の空洞部に向かって第2導電型の不純物濃度が低下する第2導電型の第3の半導体層と、
を備える半導体装置。 - 前記第2の半導体層と前記第3の半導体層との間の距離をW1、前記第1の半導体層の第1導電型の不純物濃度をN1、前記第1の側面から前記第1の空洞部の距離をW2、前記第2の半導体層の第2導電型の不純物濃度をN2とする場合に、
0.7≦W1N1/W2N2≦1.3
の関係を充足することを特徴とする請求項1記載の半導体装置。 - 前記第1の空洞部と前記第2の空洞部との前記第1の半導体層の表面に平行な方向の距離をD、前記第1の空洞部の下端と前記第2の空洞部の下端との前記第1の半導体層の表面に垂直な方向の距離をd1、前記第1の空洞部の上端と前記第2の空洞部の上端との前記第1の半導体層の表面に垂直な方向の距離をd2とする場合に、
d1≦D、かつ、d2≦D
の関係を充足することを特徴とする請求項1または請求項2記載の半導体装置。 - 前記第1の空洞部の前記第1の半導体層の表面に垂直な方向の長さをL1とする場合に、
L1≧D
の関係を充足することを特徴とする請求項3記載の半導体装置。 - 前記第2の半導体層および前記第3の半導体層の、前記第1の半導体層表面に平行な面での伸長方向が、<100>方向であることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013191130A JP6054272B2 (ja) | 2013-09-13 | 2013-09-13 | 半導体装置 |
CN201410028187.6A CN104465758A (zh) | 2013-09-13 | 2014-01-22 | 半导体器件 |
US14/215,294 US9035377B2 (en) | 2013-09-13 | 2014-03-17 | Semiconductor device |
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---|---|---|---|
JP2013191130A JP6054272B2 (ja) | 2013-09-13 | 2013-09-13 | 半導体装置 |
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Publication Number | Publication Date |
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JP2015056639A JP2015056639A (ja) | 2015-03-23 |
JP6054272B2 true JP6054272B2 (ja) | 2016-12-27 |
Family
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JP2013191130A Active JP6054272B2 (ja) | 2013-09-13 | 2013-09-13 | 半導体装置 |
Country Status (3)
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US (1) | US9035377B2 (ja) |
JP (1) | JP6054272B2 (ja) |
CN (1) | CN104465758A (ja) |
Families Citing this family (8)
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JP2016163004A (ja) * | 2015-03-05 | 2016-09-05 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2017054958A (ja) | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
JP2017054959A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
US10720494B2 (en) * | 2018-01-22 | 2020-07-21 | Globalfoundries Inc. | Field-effect transistors with airgaps |
JP7378947B2 (ja) * | 2019-03-28 | 2023-11-14 | ローム株式会社 | 半導体装置 |
KR20220098138A (ko) * | 2019-11-08 | 2022-07-11 | 니신보 마이크로 디바이즈 인크. | 반도체 장치 |
JP7249269B2 (ja) * | 2019-12-27 | 2023-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
US11569345B2 (en) * | 2020-11-23 | 2023-01-31 | Alpha And Omega Semiconductor (Cayman) Ltd. | Gas dopant doped deep trench super junction high voltage MOSFET |
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JP4939760B2 (ja) * | 2005-03-01 | 2012-05-30 | 株式会社東芝 | 半導体装置 |
JP5072221B2 (ja) * | 2005-12-26 | 2012-11-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7799640B2 (en) * | 2006-09-28 | 2010-09-21 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having trench charge compensation regions |
US7902075B2 (en) * | 2008-09-08 | 2011-03-08 | Semiconductor Components Industries, L.L.C. | Semiconductor trench structure having a sealing plug and method |
JP5400405B2 (ja) | 2009-02-05 | 2014-01-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP2011142269A (ja) * | 2010-01-08 | 2011-07-21 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
CN102867842B (zh) * | 2011-07-05 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 超级结器件及制造方法 |
US9070580B2 (en) * | 2013-05-01 | 2015-06-30 | Infineon Technologies Austria Ag | Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient |
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2013
- 2013-09-13 JP JP2013191130A patent/JP6054272B2/ja active Active
-
2014
- 2014-01-22 CN CN201410028187.6A patent/CN104465758A/zh active Pending
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US9035377B2 (en) | 2015-05-19 |
CN104465758A (zh) | 2015-03-25 |
JP2015056639A (ja) | 2015-03-23 |
US20150076589A1 (en) | 2015-03-19 |
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