JP6053946B2 - 接合する装置および方法 - Google Patents
接合する装置および方法 Download PDFInfo
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- JP6053946B2 JP6053946B2 JP2015543367A JP2015543367A JP6053946B2 JP 6053946 B2 JP6053946 B2 JP 6053946B2 JP 2015543367 A JP2015543367 A JP 2015543367A JP 2015543367 A JP2015543367 A JP 2015543367A JP 6053946 B2 JP6053946 B2 JP 6053946B2
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- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 53
- 230000005540 biological transmission Effects 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 239000000463 material Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 16
- 239000011324 bead Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1028—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by bending, drawing or stretch forming sheet to assume shape of configured lamina while in contact therewith
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Paints Or Removers (AREA)
Description
・セラミックス、特に窒化ケイ素(Si3N4)、炭化ケイ素(SiC)および/または窒化ホウ素(BN)、および/または
・金属およびその合金、一般的に高融点金属、特に鋼および/または別種の鉄ベース材料、および/または
・黒鉛、および/または
・ガラス、および/または
・ポリマ、および/または
・複合材料:
が使用される。
・圧力伝達面6uを有する下側のプレート9と、
・この下側のプレート9を、外縁部Pの領域に設けられた位置決め手段8を介して保持/位置決めするための保持プレート4と
から成る加圧プレート6の構成が共通している。
2 基板
3 接合層
3o,3o’ 表面
3w 隆起部
4 保持プレート
5 製品基板
5o 被加圧面
6 加圧プレート
6u 圧力伝達面
6o 上面
7 スペーサ
8 位置決め手段
9 下側のプレート
10 撓めエレメント
A 出発ゾーン
D1,D2 厚さ
R 縁ゾーン
P 外縁部
r 曲率半径
H 高さ
Z 中心部
Claims (10)
- 第1の基板(2)に第2の基板(5)を接合する装置において、該装置が、以下の特徴:すなわち、
接合層(3)によりコーティングされた第1の基板(2)と、接合層(3)に載せられた第2の基板(5)とを保持する保持装置(1)と、
第2の基板(5)の、接合層(3)と反対の側の被加圧面(5o)に、該被加圧面(5o)の縁ゾーン(R)よりも内側に位置する出発ゾーン(A)を起点として被加圧面(5o)全体に加えられるまで、接合力を加える加圧装置と:
を備え、
前記加圧装置が、湾曲させられた圧力伝達面(6u)を備えた加圧プレート(6)を有しており、
加圧プレート(6)が、圧力伝達面(6u)を有する下側のプレート(9)と、加圧プレート(6)を位置決めする保持プレート(4)とから形成されていることを特徴とする、第1の基板に第2の基板を接合する装置。 - 加圧装置が、凸状に湾曲させられた圧力伝達面(6u)を備えた加圧プレート(6)を有している、請求項1記載の装置。
- 圧力伝達面(6u)の接平面が、該接平面に対して法線方向で少なくとも5nmおよび/または最大で500μmだけ、間隔を置いて配置されている、請求項2記載の装置。
- 出発ゾーン(A)が、被加圧面(5o)に対して同心的に配置されている、請求項1から3までのいずれか1項記載の装置。
- 加圧装置が、接合力を制御装置により制御して加えるポンチを有している、請求項1から4までのいずれか1項記載の装置。
- 加圧プレート(6)が、圧力伝達面(6u)を有する下側のプレート(9)と、加圧プレート(6)を、外縁部(P)の領域で位置決め手段(8)を介して位置決めする保持プレート(4)とから形成されている、請求項2記載の装置。
- 下側のプレート(9)が、出発ゾーン(A)の領域で外縁部(P)よりも肉厚に形成されている、請求項6記載の装置。
- 出発ゾーン(A)の領域で下側のプレート(9)と保持プレート(4)との間にスペーサ(7)が配置されている、請求項6記載の装置。
- 出発ゾーン(A)の領域で保持プレート(4)に対して下側のプレート(9)に撓め圧を加える、圧力伝達面(6u)の曲率を調整する撓めエレメント(10)が配置されている、請求項6記載の装置。
- 第1の基板(2)に第2の基板(5)を接合する方法において、該方法が、以下のステップ:すなわち、
接合層(3)によりコーティングされた第1の基板(2)と、接合層(3)に載せられた第2の基板(5)とを保持する保持ステップと、
第2の基板(5)の、接合層(3)と反対の側の被加圧面(5o)に、該被加圧面(5o)の縁ゾーン(R)よりも内側に位置する出発ゾーン(A)を起点として被加圧面(5o)全体に加えられるまで、接合力を加える加圧ステップと:
を備え、
前記加圧ステップでは、湾曲させられた圧力伝達面(6u)を備えた加圧プレート(6)が被加圧面(5o)に接合力を加え、
前記加圧ステップでは、圧力伝達面(6u)を有する加圧プレート(6)の下側のプレート(9)が被加圧面(5o)に接合力を加え、保持プレート(4)が、加圧プレート(6)を位置決めすることを特徴とする、第1の基板に第2の基板を接合する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012111246.0 | 2012-11-21 | ||
DE102012111246.0A DE102012111246A1 (de) | 2012-11-21 | 2012-11-21 | Vorrichtung und Verfahren zum Bonden |
PCT/EP2013/072995 WO2014079677A1 (de) | 2012-11-21 | 2013-11-05 | Vorrichtung und verfahren zum bonden |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016504760A JP2016504760A (ja) | 2016-02-12 |
JP6053946B2 true JP6053946B2 (ja) | 2016-12-27 |
Family
ID=49518965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015543367A Active JP6053946B2 (ja) | 2012-11-21 | 2013-11-05 | 接合する装置および方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10943810B2 (ja) |
JP (1) | JP6053946B2 (ja) |
KR (1) | KR102211333B1 (ja) |
CN (1) | CN104781921B (ja) |
AT (2) | AT517639A5 (ja) |
DE (1) | DE102012111246A1 (ja) |
TW (1) | TWI636512B (ja) |
WO (1) | WO2014079677A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102609698B1 (ko) | 2016-03-22 | 2023-12-04 | 에베 그룹 에. 탈너 게엠베하 | 기판을 결합하기 위한 방법 및 장치 |
US10872874B2 (en) * | 2018-02-26 | 2020-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding apparatus and method of bonding substrates |
US10770421B2 (en) * | 2018-12-29 | 2020-09-08 | Micron Technology, Inc. | Bond chucks having individually-controllable regions, and associated systems and methods |
TWI802956B (zh) * | 2021-08-11 | 2023-05-21 | 日商雅馬哈智能機器控股股份有限公司 | 部材間接合裝置以及接合部材製造方法 |
Family Cites Families (21)
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DE3670178D1 (de) | 1986-08-13 | 1990-05-10 | Toshiba Kawasaki Kk | Apparat zum zusammenfuegen von halbleiterscheiben. |
JP2945089B2 (ja) * | 1990-07-05 | 1999-09-06 | 古河電気工業株式会社 | ウエハへのテープ貼付装置 |
JPH0582493A (ja) * | 1991-03-11 | 1993-04-02 | Hitachi Ltd | ウエハ接着装置およびその装置を用いたウエハの接着方法 |
JP2910334B2 (ja) | 1991-07-22 | 1999-06-23 | 富士電機株式会社 | 接合方法 |
JP2678161B2 (ja) | 1991-10-30 | 1997-11-17 | 九州電子金属 株式会社 | 半導体ウエーハの真空貼着装置 |
JPH09320913A (ja) | 1996-05-30 | 1997-12-12 | Nec Kansai Ltd | ウェーハ貼り付け方法及びその装置 |
JPH1174164A (ja) * | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
US6383890B2 (en) * | 1997-12-26 | 2002-05-07 | Canon Kabushiki Kaisha | Wafer bonding method, apparatus and vacuum chuck |
JP4051125B2 (ja) * | 1998-03-25 | 2008-02-20 | 不二越機械工業株式会社 | ウェーハの接着装置 |
JP4614626B2 (ja) * | 2003-02-05 | 2011-01-19 | 東京エレクトロン株式会社 | 薄肉半導体チップの製造方法 |
JP5281739B2 (ja) * | 2006-07-18 | 2013-09-04 | 新光電気工業株式会社 | 陽極接合装置 |
JP4841412B2 (ja) | 2006-12-06 | 2011-12-21 | 日東電工株式会社 | 基板貼合せ装置 |
DE102006058493B4 (de) * | 2006-12-12 | 2012-03-22 | Erich Thallner | Verfahren und Vorrichtung zum Bonden von Wafern |
JP2008182016A (ja) * | 2007-01-24 | 2008-08-07 | Tokyo Electron Ltd | 貼り合わせ装置、貼り合わせ方法 |
JP4746003B2 (ja) * | 2007-05-07 | 2011-08-10 | リンテック株式会社 | 移載装置及び移載方法 |
KR20100043478A (ko) * | 2008-10-20 | 2010-04-29 | 삼성전기주식회사 | 정전 척 및 이를 구비한 기판 접합 장치 |
DE102008044200B4 (de) * | 2008-11-28 | 2012-08-23 | Thin Materials Ag | Bonding-Verfahren |
DE102009018977A1 (de) | 2009-04-25 | 2010-11-04 | Ev Group Gmbh | Vorrichtung zur Ausrichtung und Vorfixierung eines Wafers |
EP2290679B1 (de) | 2009-09-01 | 2016-05-04 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films |
JP5134673B2 (ja) | 2010-10-29 | 2013-01-30 | 東京エレクトロン株式会社 | 貼り合わせ装置及び貼り合わせ方法 |
US20120186741A1 (en) * | 2011-01-26 | 2012-07-26 | Aptina Imaging Corporation | Apparatus for wafer-to-wafer bonding |
-
2012
- 2012-11-21 DE DE102012111246.0A patent/DE102012111246A1/de active Pending
-
2013
- 2013-11-05 WO PCT/EP2013/072995 patent/WO2014079677A1/de active Application Filing
- 2013-11-05 KR KR1020157012186A patent/KR102211333B1/ko active IP Right Grant
- 2013-11-05 US US14/443,792 patent/US10943810B2/en active Active
- 2013-11-05 AT ATA9382/2013A patent/AT517639A5/de active IP Right Grant
- 2013-11-05 CN CN201380060936.7A patent/CN104781921B/zh active Active
- 2013-11-05 AT ATGM8036/2019U patent/AT16646U1/de not_active IP Right Cessation
- 2013-11-05 JP JP2015543367A patent/JP6053946B2/ja active Active
- 2013-11-21 TW TW102142504A patent/TWI636512B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102211333B1 (ko) | 2021-02-03 |
KR20150088248A (ko) | 2015-07-31 |
TW201438116A (zh) | 2014-10-01 |
TWI636512B (zh) | 2018-09-21 |
CN104781921A (zh) | 2015-07-15 |
US20150279715A1 (en) | 2015-10-01 |
DE102012111246A1 (de) | 2014-05-22 |
AT16646U1 (de) | 2020-04-15 |
WO2014079677A1 (de) | 2014-05-30 |
JP2016504760A (ja) | 2016-02-12 |
AT517639A5 (de) | 2017-03-15 |
CN104781921B (zh) | 2017-11-28 |
US10943810B2 (en) | 2021-03-09 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |