JP6052536B2 - 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法 - Google Patents

光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法 Download PDF

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JP6052536B2
JP6052536B2 JP2012253129A JP2012253129A JP6052536B2 JP 6052536 B2 JP6052536 B2 JP 6052536B2 JP 2012253129 A JP2012253129 A JP 2012253129A JP 2012253129 A JP2012253129 A JP 2012253129A JP 6052536 B2 JP6052536 B2 JP 6052536B2
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carrier lifetime
wavelength
semiconductor substrate
light
effective carrier
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JP2013145868A (ja
JP2013145868A5 (https=
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俊之 鮫島
俊之 鮫島
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Tokyo University of Agriculture and Technology NUC
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Tokyo University of Agriculture and Technology NUC
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Priority to JP2012253129A priority Critical patent/JP6052536B2/ja
Priority to US14/364,997 priority patent/US10126253B2/en
Priority to PCT/JP2012/082038 priority patent/WO2013089088A1/ja
Priority to CN201280062241.8A priority patent/CN104094389B/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2012253129A 2011-12-16 2012-11-19 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法 Active JP6052536B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012253129A JP6052536B2 (ja) 2011-12-16 2012-11-19 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法
US14/364,997 US10126253B2 (en) 2011-12-16 2012-12-11 Photoinduced carrier lifetime measurement device and photoinduced carrier lifetime measurement method
PCT/JP2012/082038 WO2013089088A1 (ja) 2011-12-16 2012-12-11 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法
CN201280062241.8A CN104094389B (zh) 2011-12-16 2012-12-11 光致载流子寿命测量装置及光致载流子寿命测量方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011276215 2011-12-16
JP2011276215 2011-12-16
JP2012253129A JP6052536B2 (ja) 2011-12-16 2012-11-19 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法

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JP2013145868A JP2013145868A (ja) 2013-07-25
JP2013145868A5 JP2013145868A5 (https=) 2015-12-03
JP6052536B2 true JP6052536B2 (ja) 2016-12-27

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US (1) US10126253B2 (https=)
JP (1) JP6052536B2 (https=)
CN (1) CN104094389B (https=)
WO (1) WO2013089088A1 (https=)

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JP2016157931A (ja) * 2015-02-20 2016-09-01 国立大学法人東京農工大学 光誘起キャリヤライフタイム測定方法及び光誘起キャリヤライフタイム測定装置
JP6382747B2 (ja) * 2015-02-26 2018-08-29 京セラ株式会社 過剰少数キャリアの実効ライフタイム測定方法および過剰少数キャリアの実効ライフタイム測定装置
JP6826007B2 (ja) * 2017-06-29 2021-02-03 京セラ株式会社 光誘起キャリアのバルクキャリアライフタイムの測定方法および測定装置
CN107591340A (zh) * 2017-08-01 2018-01-16 惠科股份有限公司 一种半导体的测试方法和测试装置
CN110470965B (zh) * 2019-07-09 2020-07-28 同济大学 一种半导体表面态载流子寿命测试方法
CN111128783B (zh) * 2019-12-30 2024-07-16 南方科技大学 一种少数载流子寿命的纵向分布测试系统和方法
FR3118283B1 (fr) * 2020-12-18 2023-11-24 Commissariat Energie Atomique Procédé de détermination de la durée de vie volumique des porteurs de charge d'un substrat et dispositif associé
JP7249395B1 (ja) 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
JP7713198B2 (ja) * 2022-09-20 2025-07-25 株式会社Sumco 半導体試料の評価方法
EP4672307A1 (en) * 2023-02-24 2025-12-31 Sumco Corporation METHOD AND DEVICE FOR EVALUATING SEMICONDUCTOR SAMPLES AND METHOD FOR MANUFACTURING SEMICONDUCTOR SLICES

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US5177351A (en) * 1988-08-23 1993-01-05 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
JPH067564B2 (ja) * 1988-09-07 1994-01-26 三菱マテリアル株式会社 ウェーハ表面の半導体特性測定方法
JP2889307B2 (ja) * 1990-03-26 1999-05-10 株式会社東芝 ▲ｉｖ▼族半導体のキャリアライフタイム測定法
US7187186B2 (en) 2004-03-22 2007-03-06 Kla-Tencor Technologies Corp. Methods and systems for determining one or more properties of a specimen
JP4441381B2 (ja) * 2004-10-29 2010-03-31 三菱電機株式会社 表面キャリア再結合速度の測定方法
JP5295924B2 (ja) * 2009-10-06 2013-09-18 株式会社神戸製鋼所 半導体キャリア寿命測定装置および該方法
KR101322591B1 (ko) * 2009-10-06 2013-10-28 가부시키가이샤 코베루코 카겐 반도체 캐리어 수명 측정 장치 및 그 방법
US9239299B2 (en) * 2010-02-15 2016-01-19 National University Corporation Tokyo University Of Agriculture And Technology Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device
US8912799B2 (en) * 2011-11-10 2014-12-16 Semiconductor Physics Laboratory Co., Ltd. Accurate measurement of excess carrier lifetime using carrier decay method
US9131170B2 (en) * 2012-04-13 2015-09-08 Andreas Mandelis Method and apparatus for performing heterodyne lock-in imaging and quantitative non-contact measurements of electrical properties

Also Published As

Publication number Publication date
WO2013089088A1 (ja) 2013-06-20
CN104094389B (zh) 2016-09-07
US20140303919A1 (en) 2014-10-09
JP2013145868A (ja) 2013-07-25
US10126253B2 (en) 2018-11-13
CN104094389A (zh) 2014-10-08

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