CN110470965B - 一种半导体表面态载流子寿命测试方法 - Google Patents
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Abstract
本发明涉及一种半导体表面态载流子寿命测试方法,包括以下步骤:1)采用光子能量高于半导体禁带宽度的窄脉冲光源发射光脉冲,经光路准直耦合到近场光学探针中,近场光学探针在待测半导体材料的表面激发产生光生载流子;2)激发出的光生载流子集中在半导体材料的表面,以表面态作为复合中心不断发生复合,该复合速率与载流子浓度、载流子寿命成正比;3)在步骤1)和步骤2)的载流子激发和复合过程中,由于电子体积效应均产生晶格常数的变化,并产生应力波,通过高频宽带超声检测方式检测此应力波信号;4)对应力波信号进行拟合计算,得到表面态的载流子寿命τc。与现有技术相比,本发明排除了半导体体复合影响,具有测量准确等优点。
Description
技术领域
本发明涉及半导体材料测试技术领域,尤其是涉及一种半导体表面态载流子寿命测试方法。
背景技术
载流子寿命作为半导体材料的一个重要参数,已作为表征器件性能,太阳能电池效率的重要参考依据。对于硅这样的IV族元素半导体来说,载流子的复合过程绝大部分是通过禁带中间的复合中心进行的。实际的半导体器件中,在半导体材料表面上理想晶格的周期性突然中断,周期势函数的破坏导致在禁带中出现电子能态,即表面态。表面态对半导体器件的特性具有非常重要的影响,特别是对于太阳能电池的性能有很大影响。
常用的载流子寿命测试方法很多,如直流光电导衰退法、微波光电导衰减法、表面光压电法等,这些方法都是对体复合时的载流子寿命进行测试。而在实际的半导体器件中,在半导体材料表面上理想晶格的周期性突然中断,周期势函数的破坏导致在禁带中出现电子能态,即表面态。表面态对半导体器件的特性具有非常重要的影响,特别是对于太阳能电池的性能有很大影响。目前尚没有较好的测试表面态载流子寿命的方法。
发明内容
本发明的目的就是为了克服上述现有技术存在的缺陷而提供一种半导体表面态载流子寿命测试方法。
本发明的目的可以通过以下技术方案来实现:
一种半导体表面态载流子寿命测试方法,包括以下步骤:
1)采用光子能量高于半导体禁带宽度的窄脉冲光源发射光脉冲,经光路准直耦合到近场光学探针中,近场光学探针在待测半导体材料的表面激发产生光生载流子;
2)激发出的光生载流子集中在半导体材料的表面,以表面态作为复合中心不断发生复合,该复合速率与载流子浓度、载流子寿命成正比;
3)在步骤1)和步骤2)的载流子激发和复合过程中,由于电子体积效应均产生晶格常数的变化,并产生应力波,通过高频宽带超声检测方式检测此应力波信号;
4)对应力波信号进行拟合计算,得到表面态的载流子寿命τc。
所述的步骤1)中,窄脉冲光源发射的光脉冲宽度为飞秒到纳秒量级,且不超过5纳秒。
所述的步骤1)中,近场光学探针为有孔近场光学探针或无孔近场光学探针,光脉冲经准直耦合到有孔近场光学探针中或无孔近场光学探针表面。
所述的步骤1)中,近场光学探针与待测半导体材料表面的距离不超过光脉冲波长的1/10。
所述的步骤1)中,近场光学探针激发的光生载流子位于待测半导体的表面和亚表面。
所述的步骤2)中,在近场光学探针激发的待测半导体表面的光生载流子复合时,以表面态为中心进行间接复合。
所述的步骤2)中,所述的光生载流子在光脉冲辐照结束后仍持续复合,直至恢复到半导体材料内的载流子平衡状态。
所述的步骤3)中,通过高频宽带超声检测仪器进行半导体材料表面应力波信号的检测,所述的高频宽带超声检测仪器包括具有纳秒分辨率的超声换能器、激光多普勒测振和激光干涉仪。
所述的步骤4)中,对半导体材料表面受近场光激励产生的应力波信号的拖尾部分进行拟合获得表面态的载流子寿命τc,具体的拟合公式为:
与现有技术相比,本发明具有以下优点:
本发明采用近场光照射半导体材料表面,主要激发表面的光生载流子,用纳秒分辨率的高频超声换能器、激光多普勒测振和激光干涉仪对表面产生的应力波进行检测,拟合计算后能够得到半导体表面态的载流子寿命,能够排除半导体的体复合的影响,对于太阳能电池、集成电路芯片等具有重要意义。
附图说明
图1为本发明半导体表面态的载流子寿命测试方法的流程图。
图2为实测得到的半导体表面态光生应力波信号和拟合结果。
具体实施方式
下面结合附图和具体实施例对本发明进行详细说明。
实施例
如图1和2所示,本发明提供一种半导体表面态的载流子寿命测试方法,近提供一种新的表征半导体表面态中载流子动力学性质的方法。能够排除半导体的体复合的影响,而专注于测量表面态的载流子寿命,对于太阳能电池、集成电路芯片等具有重要意义。
具体的,它包括以下步骤:
步骤一、用光子能量高于半导体禁带宽度的窄脉冲光源发射光脉冲,经光路准直耦合到近场光学探针里,近场光在待测试半导体材料表面激发电子空穴对,也被称为光生载流子;其中,窄脉冲光源发射的光脉冲宽度为飞秒到纳秒量级。
步骤二、步骤一中激发出来的光生载流子集中在半导体材料的表面,以表面态作为复合中心不断发生复合,复合速率与载流子浓度、载流子寿命成正比。光脉冲辐照结束后,光生载流子仍将持续复合,直至恢复到半导体材料内的载流子平衡状态。
步骤三、在步骤一和步骤二的载流子激发和复合过程中,由于电子体积效应都会产生晶格常数c的变化,其相对变化量正比于电子-空穴对浓度n:
其中,dEG/dP是带隙压力系数,Q是一个常数系数。对于硅来说,带隙压力系数是负数(-1.4),这意味着电子空穴对浓度n增大时,硅的晶格常数变小,硅产生收缩;而当电子空穴对浓度n减小时,硅的晶格常数变大,硅产生膨胀,即电子体积效应。因此当光脉冲入射到半导体材料上时,会因为半导体材料的本征吸收和电子体积效应,会先产生收缩,再产生膨胀,产生脉冲应力波。用纳秒分辨率的高频超声换能器或激光多普勒测振或激光干涉仪对半导体材料表面产生的应力波信号进行检测;
Claims (9)
1.一种半导体表面态载流子寿命测试方法,其特征在于,包括以下步骤:
1)采用光子能量高于半导体禁带宽度的窄脉冲光源发射光脉冲,经光路准直耦合到近场光学探针中,近场光学探针在待测半导体材料的表面激发产生光生载流子;
2)激发出的光生载流子集中在半导体材料的表面,以表面态作为复合中心不断发生复合,该复合速率与载流子浓度、载流子寿命成正比;
3)在步骤1)和步骤2)的载流子激发和复合过程中,由于电子体积效应均产生晶格常数的变化,并产生应力波,通过高频宽带超声检测方式检测此应力波信号;
4)对应力波信号进行拟合计算,得到表面态的载流子寿命τc。
2.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤1)中,窄脉冲光源发射的光脉冲宽度为飞秒到纳秒量级,且不超过5纳秒。
3.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤1)中,近场光学探针为有孔近场光学探针或无孔近场光学探针,光脉冲经准直耦合到有孔近场光学探针中或无孔近场光学探针表面。
4.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤1)中,近场光学探针与待测半导体材料表面的距离不超过光脉冲波长的1/10。
5.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤1)中,近场光学探针激发的光生载流子位于待测半导体的表面和亚表面。
6.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤2)中,在近场光学探针激发的待测半导体表面的光生载流子复合时,以表面态为中心进行间接复合。
7.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤2)中,所述的光生载流子在光脉冲辐照结束后仍持续复合,直至恢复到半导体材料内的载流子平衡状态。
8.根据权利要求1所述的一种半导体表面态载流子寿命测试方法,其特征在于,所述的步骤3)中,通过高频宽带超声检测仪器进行半导体材料表面应力波信号的检测,所述的高频宽带超声检测仪器包括具有纳秒分辨率的超声换能器、激光多普勒测振和激光干涉仪。
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