JPS6242537Y2 - - Google Patents
Info
- Publication number
- JPS6242537Y2 JPS6242537Y2 JP1981175369U JP17536981U JPS6242537Y2 JP S6242537 Y2 JPS6242537 Y2 JP S6242537Y2 JP 1981175369 U JP1981175369 U JP 1981175369U JP 17536981 U JP17536981 U JP 17536981U JP S6242537 Y2 JPS6242537 Y2 JP S6242537Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor wafer
- wafer
- photovoltage
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000969 carrier Substances 0.000 claims description 12
- 238000007689 inspection Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536981U JPS5881944U (ja) | 1981-11-27 | 1981-11-27 | 半導体ウエハ検査装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536981U JPS5881944U (ja) | 1981-11-27 | 1981-11-27 | 半導体ウエハ検査装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5881944U JPS5881944U (ja) | 1983-06-03 |
| JPS6242537Y2 true JPS6242537Y2 (zh) | 1987-10-31 |
Family
ID=29967703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17536981U Granted JPS5881944U (ja) | 1981-11-27 | 1981-11-27 | 半導体ウエハ検査装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5881944U (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3650917B2 (ja) * | 1997-08-29 | 2005-05-25 | 株式会社神戸製鋼所 | 表面光電圧による半導体表面評価方法及び装置 |
| US6894519B2 (en) * | 2002-04-11 | 2005-05-17 | Solid State Measurements, Inc. | Apparatus and method for determining electrical properties of a semiconductor wafer |
| JP2006073572A (ja) * | 2004-08-31 | 2006-03-16 | Oki Electric Ind Co Ltd | 半導体結晶欠陥検査方法、半導体結晶欠陥検査装置、及びその半導体結晶欠陥検査装置を用いた半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5543880A (en) * | 1978-09-22 | 1980-03-27 | Takeshi Kizaki | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
| JPS56155543A (en) * | 1981-04-08 | 1981-12-01 | Hitachi Ltd | Measuring device for semiconductor characteristic |
-
1981
- 1981-11-27 JP JP17536981U patent/JPS5881944U/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5543880A (en) * | 1978-09-22 | 1980-03-27 | Takeshi Kizaki | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
| JPS56155543A (en) * | 1981-04-08 | 1981-12-01 | Hitachi Ltd | Measuring device for semiconductor characteristic |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5881944U (ja) | 1983-06-03 |
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