JPS56155543A - Measuring device for semiconductor characteristic - Google Patents

Measuring device for semiconductor characteristic

Info

Publication number
JPS56155543A
JPS56155543A JP5179381A JP5179381A JPS56155543A JP S56155543 A JPS56155543 A JP S56155543A JP 5179381 A JP5179381 A JP 5179381A JP 5179381 A JP5179381 A JP 5179381A JP S56155543 A JPS56155543 A JP S56155543A
Authority
JP
Japan
Prior art keywords
sample
voltage
deflection
transparent
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5179381A
Other languages
Japanese (ja)
Other versions
JPS628022B2 (en
Inventor
Tadasuke Munakata
Kunihiro Yagi
Teruaki Motooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5179381A priority Critical patent/JPS56155543A/en
Publication of JPS56155543A publication Critical patent/JPS56155543A/en
Publication of JPS628022B2 publication Critical patent/JPS628022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To judge the distribution of characteristics of a sample by a method wherein the electrode havng a transparent side is installed on both sides of a semiconductor sample maintaining intervals, the surface of the sample is scanned by a thin photon beam which was made into a pluse through the intermediary of the transparent electrode and the photo electromotive voltage generated between electrodes is measured. CONSTITUTION:The wavelength of the photon beam 20 is adjusted and focused by a filter 18 and a lens 19 respectively using a CRT17 as a luminous source, and is irradiated on the sample. A deflection 16 is performed by an adjusting unit 32 adjusting the voltage of a scanning power source 31. CRT's 26 and 28 to be used for scanning image indication are deflected (27, 29) using the same signal. At the CRT28, the deflection (29) is performed by adding (30) the signal sent from a sample 2 and the image for amplitude modulation is obtained. The sample 2 is held between transparent electrodes 8 and 8', and the information for the density of impurities can be obtained by detecting (21), analyzing and amplifying (22) the transmitted beam 20'. As a result, the factor having the maximum efficiency can be determined without fail amont the relating factors of a Dember voltage. The pulse voltage is also used as the reference voltage for synchronous detection 25 and the SN coefficient of the signal can be improved. Through these procedures, whether the wafer is satisfactorily used to a solid state circuit element or not can be determined easily.
JP5179381A 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic Granted JPS56155543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5179381A JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5179381A JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Publications (2)

Publication Number Publication Date
JPS56155543A true JPS56155543A (en) 1981-12-01
JPS628022B2 JPS628022B2 (en) 1987-02-20

Family

ID=12896813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5179381A Granted JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Country Status (1)

Country Link
JP (1) JPS56155543A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881944U (en) * 1981-11-27 1983-06-03 株式会社日立製作所 Semiconductor wafer inspection equipment
JPS5982740A (en) * 1982-11-02 1984-05-12 Nec Corp Evaluating method of high-resistance semiconductor wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136182A (en) * 1978-04-13 1979-10-23 Fumio Horiguchi Method of measuring nonncontact semiconductor wafer characteristics

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136182A (en) * 1978-04-13 1979-10-23 Fumio Horiguchi Method of measuring nonncontact semiconductor wafer characteristics

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881944U (en) * 1981-11-27 1983-06-03 株式会社日立製作所 Semiconductor wafer inspection equipment
JPS6242537Y2 (en) * 1981-11-27 1987-10-31
JPS5982740A (en) * 1982-11-02 1984-05-12 Nec Corp Evaluating method of high-resistance semiconductor wafer

Also Published As

Publication number Publication date
JPS628022B2 (en) 1987-02-20

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