JPS54102978A - Test method for semiconductor element - Google Patents
Test method for semiconductor elementInfo
- Publication number
- JPS54102978A JPS54102978A JP1022878A JP1022878A JPS54102978A JP S54102978 A JPS54102978 A JP S54102978A JP 1022878 A JP1022878 A JP 1022878A JP 1022878 A JP1022878 A JP 1022878A JP S54102978 A JPS54102978 A JP S54102978A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- electromagnetic wave
- leak current
- electrodes
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To facilitate the test for the defect such as the crack and others in the semiconductor element as well as for the short circuit of the electrode pattern and others by giving the scanning on the element via the electromagnetic spot while the voltage is being applied between the necessary electrodes of the element and detecting the leak current flowing between these electrodes.
CONSTITUTION: The test circuit comprises element 1 such as the transistor, leak current detector circuit 2, electromagnetic wave 3, electromagnetic wave scanning part 4 and others. Circuit 2 is composed of the serial circuit of power source 5 and resistance 6, and the constant voltage of power source 5 is applied between two necessary electrodes of element 1. Under these conditions, electromagnetic wave 3 of infrared rays or the like is generated from part 4 in a spot beam shape to scan the surface of element 1. In this way, the pair of the electron and the positive hole is generated at the PN junction part provided inside element 1 to cause the electromotive force. Thus, the leak current flowing to resistance 6 varies. And the analog quantity of the above variation is detected to find out the defect.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1022878A JPS54102978A (en) | 1978-01-31 | 1978-01-31 | Test method for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1022878A JPS54102978A (en) | 1978-01-31 | 1978-01-31 | Test method for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54102978A true JPS54102978A (en) | 1979-08-13 |
Family
ID=11744414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1022878A Pending JPS54102978A (en) | 1978-01-31 | 1978-01-31 | Test method for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54102978A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992497B2 (en) | 2000-12-28 | 2006-01-31 | Advantest Corporation | LSI testing apparatus for testing an electronic device |
| JP2007187600A (en) * | 2006-01-16 | 2007-07-26 | Sanyo Electric Co Ltd | Method and analyzer for analyzing semiconductor device |
-
1978
- 1978-01-31 JP JP1022878A patent/JPS54102978A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992497B2 (en) | 2000-12-28 | 2006-01-31 | Advantest Corporation | LSI testing apparatus for testing an electronic device |
| JP2007187600A (en) * | 2006-01-16 | 2007-07-26 | Sanyo Electric Co Ltd | Method and analyzer for analyzing semiconductor device |
| JP4694970B2 (en) * | 2006-01-16 | 2011-06-08 | 三洋電機株式会社 | Semiconductor element analysis method |
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