JPS5780571A - Surface potential measuring apparatus - Google Patents
Surface potential measuring apparatusInfo
- Publication number
- JPS5780571A JPS5780571A JP55158607A JP15860780A JPS5780571A JP S5780571 A JPS5780571 A JP S5780571A JP 55158607 A JP55158607 A JP 55158607A JP 15860780 A JP15860780 A JP 15860780A JP S5780571 A JPS5780571 A JP S5780571A
- Authority
- JP
- Japan
- Prior art keywords
- grid
- detecting element
- measured
- voltage
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
Abstract
PURPOSE:To accurately measure the potential at an object to be measured in an electrostatic copying machine or the like in a non-contact manner, by employing a grid cutting off an incident electric flux and an electrode directly connected with an FET. CONSTITUTION:An electrode 17 placed on the stepped portion of an insulator 14 is connected to the gate of an FET16 housed in a tubular cap 11 having an electric flux incident opening 13. A detecting element 21 of such an arrangement is used to measure the potential at an object 18 to be measured to which a voltage is applied from a DC power source 19. In other words, a base 20 equipped with the detecting element 21 is provided with a grid 22 between the object 18 and the detecting element 21, and an FF circuit 23 is connected between the grid 22 and the ground. The grid 22 is periodically grounded by the FF circuit 23. Consequently, the electric line of force generated from the object 18 and reaching the electrode 17 in the detecting element 21 is interrupted by the grid 22, so that a voltage is induced between the drain and the source of the FET16. Measuring the voltage permits the surface potential of the object 18 to be measured in a non-contact manner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55158607A JPS599864B2 (en) | 1980-11-10 | 1980-11-10 | Surface potential measuring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55158607A JPS599864B2 (en) | 1980-11-10 | 1980-11-10 | Surface potential measuring device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5780571A true JPS5780571A (en) | 1982-05-20 |
JPS599864B2 JPS599864B2 (en) | 1984-03-05 |
Family
ID=15675392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55158607A Expired JPS599864B2 (en) | 1980-11-10 | 1980-11-10 | Surface potential measuring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS599864B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482541A (en) * | 1987-09-25 | 1989-03-28 | Hitachi Ltd | Method and device for measuring semiconductor surface |
-
1980
- 1980-11-10 JP JP55158607A patent/JPS599864B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482541A (en) * | 1987-09-25 | 1989-03-28 | Hitachi Ltd | Method and device for measuring semiconductor surface |
Also Published As
Publication number | Publication date |
---|---|
JPS599864B2 (en) | 1984-03-05 |
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