JPS5881944U - Semiconductor wafer inspection equipment - Google Patents

Semiconductor wafer inspection equipment

Info

Publication number
JPS5881944U
JPS5881944U JP17536981U JP17536981U JPS5881944U JP S5881944 U JPS5881944 U JP S5881944U JP 17536981 U JP17536981 U JP 17536981U JP 17536981 U JP17536981 U JP 17536981U JP S5881944 U JPS5881944 U JP S5881944U
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wafer inspection
signal
inspection equipment
extracting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17536981U
Other languages
Japanese (ja)
Other versions
JPS6242537Y2 (en
Inventor
本間　則秋
忠輔 棟方
渋谷　秀夫
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP17536981U priority Critical patent/JPS5881944U/en
Publication of JPS5881944U publication Critical patent/JPS5881944U/en
Application granted granted Critical
Publication of JPS6242537Y2 publication Critical patent/JPS6242537Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案による半導体ウェハ検査装置の基本構成
を示す図、第２図ａ　”−ｄは第１図におけるセンサ部
の実施例を示した図、第３１１ａ、　　ｂは試料の場所
による光電圧の分布測定例を示す図である。 １・・・試料台（兼電極）、２・・・試料（ウェハ）、
３・・・透明電極、３′・・・ガラス基板、３″・・・
スペーサ、４・・・レンズ、５・・・発光ダイオード（
ＬＥＤ）、５・・・パルス電源、７・・・同期検波型増
幅器、８・・・信号処理回路。Fig. 1 is a diagram showing the basic configuration of a semiconductor wafer inspection device according to the present invention, Fig. 2 a''-d is a diagram showing an embodiment of the sensor section in Fig. 1, and Figs. It is a diagram showing an example of voltage distribution measurement. 1... Sample stage (cum-electrode), 2... Sample (wafer),
3...Transparent electrode, 3'...Glass substrate, 3''...
Spacer, 4... Lens, 5... Light emitting diode (
LED), 5... Pulse power supply, 7... Synchronous detection amplifier, 8... Signal processing circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウェハに断続光を照射する光照射手段と、光の照
射によって上記半導体ウェハ内に生じた光電圧を上記半
導体ウェハに対して非接触で取出す検出手段と、検出さ
れた信号から光電圧信号のみを取り出す検波手段と、検
波された光電圧信号をあらかじめ定められたしきい値に
よって弁別して上記半導体ウェハの良否を判別する信号
処理手段とを備えてなることを特徴とする半導体ウエノ
１検査装置。a light irradiation means for irradiating the semiconductor wafer with intermittent light; a detection means for extracting a photovoltage generated in the semiconductor wafer by the light irradiation without contacting the semiconductor wafer; and a photovoltage signal only from the detected signal. 1. A semiconductor wafer inspection apparatus comprising: a detection means for extracting the detected optical voltage signal; and a signal processing means for discriminating the detected optical voltage signal using a predetermined threshold value to determine the quality of the semiconductor wafer.
JP17536981U 1981-11-27 1981-11-27 Semiconductor wafer inspection equipment Granted JPS5881944U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17536981U JPS5881944U (en) 1981-11-27 1981-11-27 Semiconductor wafer inspection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17536981U JPS5881944U (en) 1981-11-27 1981-11-27 Semiconductor wafer inspection equipment

Publications (2)

Publication Number Publication Date
JPS5881944U true JPS5881944U (en) 1983-06-03
JPS6242537Y2 JPS6242537Y2 (en) 1987-10-31

Family

ID=29967703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17536981U Granted JPS5881944U (en) 1981-11-27 1981-11-27 Semiconductor wafer inspection equipment

Country Status (1)

Country Link
JP (1) JPS5881944U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174325A (en) * 1997-08-29 1999-03-16 Kobe Steel Ltd Semiconductor surface evaluating method and device by surface photovoltage
JP2003318236A (en) * 2002-04-11 2003-11-07 Solid State Measurements Inc Apparatus and method for measuring electric characteristic of semiconductor wafer
JP2006073572A (en) * 2004-08-31 2006-03-16 Oki Electric Ind Co Ltd Semiconductor crystal defect testing method and equipment thereof, and semiconductor device manufacturing method using the semiconductor crystal defect testing equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543880A (en) * 1978-09-22 1980-03-27 Takeshi Kizaki Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling
JPS56155543A (en) * 1981-04-08 1981-12-01 Hitachi Ltd Measuring device for semiconductor characteristic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543880A (en) * 1978-09-22 1980-03-27 Takeshi Kizaki Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling
JPS56155543A (en) * 1981-04-08 1981-12-01 Hitachi Ltd Measuring device for semiconductor characteristic

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174325A (en) * 1997-08-29 1999-03-16 Kobe Steel Ltd Semiconductor surface evaluating method and device by surface photovoltage
JP2003318236A (en) * 2002-04-11 2003-11-07 Solid State Measurements Inc Apparatus and method for measuring electric characteristic of semiconductor wafer
JP2006073572A (en) * 2004-08-31 2006-03-16 Oki Electric Ind Co Ltd Semiconductor crystal defect testing method and equipment thereof, and semiconductor device manufacturing method using the semiconductor crystal defect testing equipment

Also Published As

Publication number Publication date
JPS6242537Y2 (en) 1987-10-31

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