JPS5881944U - Semiconductor wafer inspection equipment - Google Patents
Semiconductor wafer inspection equipmentInfo
- Publication number
- JPS5881944U JPS5881944U JP17536981U JP17536981U JPS5881944U JP S5881944 U JPS5881944 U JP S5881944U JP 17536981 U JP17536981 U JP 17536981U JP 17536981 U JP17536981 U JP 17536981U JP S5881944 U JPS5881944 U JP S5881944U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer inspection
- signal
- inspection equipment
- extracting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案による半導体ウェハ検査装置の基本構成
を示す図、第２図ａ ”−ｄは第１図におけるセンサ部
の実施例を示した図、第３１１ａ、 ｂは試料の場所
による光電圧の分布測定例を示す図である。
１・・・試料台（兼電極）、２・・・試料（ウェハ）、
３・・・透明電極、３′・・・ガラス基板、３″・・・
スペーサ、４・・・レンズ、５・・・発光ダイオード（
ＬＥＤ）、５・・・パルス電源、７・・・同期検波型増
幅器、８・・・信号処理回路。Fig. 1 is a diagram showing the basic configuration of a semiconductor wafer inspection device according to the present invention, Fig. 2 a''-d is a diagram showing an embodiment of the sensor section in Fig. 1, and Figs. It is a diagram showing an example of voltage distribution measurement. 1... Sample stage (cum-electrode), 2... Sample (wafer),
3...Transparent electrode, 3'...Glass substrate, 3''...
Spacer, 4... Lens, 5... Light emitting diode (
LED), 5... Pulse power supply, 7... Synchronous detection amplifier, 8... Signal processing circuit.
Claims (1)
射によって上記半導体ウェハ内に生じた光電圧を上記半
導体ウェハに対して非接触で取出す検出手段と、検出さ
れた信号から光電圧信号のみを取り出す検波手段と、検
波された光電圧信号をあらかじめ定められたしきい値に
よって弁別して上記半導体ウェハの良否を判別する信号
処理手段とを備えてなることを特徴とする半導体ウエノ
１検査装置。a light irradiation means for irradiating the semiconductor wafer with intermittent light; a detection means for extracting a photovoltage generated in the semiconductor wafer by the light irradiation without contacting the semiconductor wafer; and a photovoltage signal only from the detected signal. 1. A semiconductor wafer inspection apparatus comprising: a detection means for extracting the detected optical voltage signal; and a signal processing means for discriminating the detected optical voltage signal using a predetermined threshold value to determine the quality of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536981U JPS5881944U (en) | 1981-11-27 | 1981-11-27 | Semiconductor wafer inspection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536981U JPS5881944U (en) | 1981-11-27 | 1981-11-27 | Semiconductor wafer inspection equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5881944U true JPS5881944U (en) | 1983-06-03 |
| JPS6242537Y2 JPS6242537Y2 (en) | 1987-10-31 |
Family
ID=29967703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17536981U Granted JPS5881944U (en) | 1981-11-27 | 1981-11-27 | Semiconductor wafer inspection equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5881944U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174325A (en) * | 1997-08-29 | 1999-03-16 | Kobe Steel Ltd | Semiconductor surface evaluating method and device by surface photovoltage |
| JP2003318236A (en) * | 2002-04-11 | 2003-11-07 | Solid State Measurements Inc | Apparatus and method for measuring electric characteristic of semiconductor wafer |
| JP2006073572A (en) * | 2004-08-31 | 2006-03-16 | Oki Electric Ind Co Ltd | Semiconductor crystal defect testing method and equipment thereof, and semiconductor device manufacturing method using the semiconductor crystal defect testing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5543880A (en) * | 1978-09-22 | 1980-03-27 | Takeshi Kizaki | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
| JPS56155543A (en) * | 1981-04-08 | 1981-12-01 | Hitachi Ltd | Measuring device for semiconductor characteristic |
-
1981
- 1981-11-27 JP JP17536981U patent/JPS5881944U/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5543880A (en) * | 1978-09-22 | 1980-03-27 | Takeshi Kizaki | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
| JPS56155543A (en) * | 1981-04-08 | 1981-12-01 | Hitachi Ltd | Measuring device for semiconductor characteristic |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174325A (en) * | 1997-08-29 | 1999-03-16 | Kobe Steel Ltd | Semiconductor surface evaluating method and device by surface photovoltage |
| JP2003318236A (en) * | 2002-04-11 | 2003-11-07 | Solid State Measurements Inc | Apparatus and method for measuring electric characteristic of semiconductor wafer |
| JP2006073572A (en) * | 2004-08-31 | 2006-03-16 | Oki Electric Ind Co Ltd | Semiconductor crystal defect testing method and equipment thereof, and semiconductor device manufacturing method using the semiconductor crystal defect testing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6242537Y2 (en) | 1987-10-31 |
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