JP6050007B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6050007B2
JP6050007B2 JP2012039503A JP2012039503A JP6050007B2 JP 6050007 B2 JP6050007 B2 JP 6050007B2 JP 2012039503 A JP2012039503 A JP 2012039503A JP 2012039503 A JP2012039503 A JP 2012039503A JP 6050007 B2 JP6050007 B2 JP 6050007B2
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light
molecule
type host
electron
organic compound
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JP2012195573A5 (enExample
JP2012195573A (ja
Inventor
山崎　舜平
舜平 山崎
瀬尾　哲史
哲史 瀬尾
信晴 大澤
信晴 大澤
智子 下垣
智子 下垣
英子 井上
英子 井上
裕史 門間
裕史 門間
晴恵 尾坂
晴恵 尾坂
鈴木　邦彦
邦彦 鈴木
竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/27—Combination of fluorescent and phosphorescent emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/90—Multiple hosts in the emissive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2012039503A 2011-02-28 2012-02-27 発光素子 Active JP6050007B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012039503A JP6050007B2 (ja) 2011-02-28 2012-02-27 発光素子

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011042120 2011-02-28
JP2011042120 2011-02-28
JP2011042122 2011-02-28
JP2011042122 2011-02-28
JP2012039503A JP6050007B2 (ja) 2011-02-28 2012-02-27 発光素子

Related Child Applications (1)

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JP2016227614A Division JP6320494B2 (ja) 2011-02-28 2016-11-24 発光素子、発光装置

Publications (3)

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JP2012195573A JP2012195573A (ja) 2012-10-11
JP2012195573A5 JP2012195573A5 (enExample) 2015-03-19
JP6050007B2 true JP6050007B2 (ja) 2016-12-21

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JP2012039503A Active JP6050007B2 (ja) 2011-02-28 2012-02-27 発光素子
JP2016227614A Active JP6320494B2 (ja) 2011-02-28 2016-11-24 発光素子、発光装置
JP2018071321A Active JP6608987B2 (ja) 2011-02-28 2018-04-03 発光素子および発光装置
JP2018218423A Active JP6568292B2 (ja) 2011-02-28 2018-11-21 発光素子及び発光装置
JP2019193380A Active JP6928636B2 (ja) 2011-02-28 2019-10-24 発光素子、及び発光装置
JP2021129470A Withdrawn JP2021182637A (ja) 2011-02-28 2021-08-06 発光素子及び発光装置
JP2023076493A Active JP7451803B2 (ja) 2011-02-28 2023-05-08 発光素子および発光装置
JP2024033922A Active JP7699684B2 (ja) 2011-02-28 2024-03-06 発光素子および発光装置
JP2025101573A Pending JP2025128360A (ja) 2011-02-28 2025-06-17 発光素子および発光装置

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JP2018071321A Active JP6608987B2 (ja) 2011-02-28 2018-04-03 発光素子および発光装置
JP2018218423A Active JP6568292B2 (ja) 2011-02-28 2018-11-21 発光素子及び発光装置
JP2019193380A Active JP6928636B2 (ja) 2011-02-28 2019-10-24 発光素子、及び発光装置
JP2021129470A Withdrawn JP2021182637A (ja) 2011-02-28 2021-08-06 発光素子及び発光装置
JP2023076493A Active JP7451803B2 (ja) 2011-02-28 2023-05-08 発光素子および発光装置
JP2024033922A Active JP7699684B2 (ja) 2011-02-28 2024-03-06 発光素子および発光装置
JP2025101573A Pending JP2025128360A (ja) 2011-02-28 2025-06-17 発光素子および発光装置

Country Status (5)

Country Link
US (6) US9929350B2 (enExample)
JP (9) JP6050007B2 (enExample)
KR (7) KR102028311B1 (enExample)
CN (1) CN102655222B (enExample)
TW (6) TWI831058B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126000A1 (ja) * 2006-04-28 2007-11-08 Shigeo Nakao 家屋等の壁面用ブロック
JP2020025120A (ja) * 2011-02-28 2020-02-13 株式会社半導体エネルギー研究所 発光素子、及び発光装置

Families Citing this family (87)

* Cited by examiner, † Cited by third party
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DE202012013753U1 (de) 2011-02-16 2021-03-01 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element
WO2012111579A1 (en) 2011-02-16 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
JP2012195572A (ja) 2011-02-28 2012-10-11 Semiconductor Energy Lab Co Ltd 発光層および発光素子
KR102112967B1 (ko) 2011-03-23 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
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WO2012137693A1 (en) 2011-04-07 2012-10-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
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CN103502256B (zh) 2011-04-29 2017-06-20 株式会社半导体能源研究所 有机金属配合物、发光元件、发光装置、电子设备及照明装置
JP2013147490A (ja) 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd イリジウム錯体、発光素子、発光装置、電子機器、及び照明装置
KR101803537B1 (ko) 2012-02-09 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
DE112013007607B3 (de) 2012-03-14 2018-02-08 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
KR102347025B1 (ko) 2012-03-14 2022-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
JP2013232629A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
JP6158542B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
JP6158543B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
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JP6367386B2 (ja) * 2012-04-20 2018-08-01 株式会社半導体エネルギー研究所 発光素子、照明装置、発光装置、表示装置、電子機器
DE112013002110B4 (de) 2012-04-20 2017-09-07 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
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