JP6049043B2 - マイクロリソグラフィ投影露光系のチャネルの欠陥を補償するための装置及び方法 - Google Patents

マイクロリソグラフィ投影露光系のチャネルの欠陥を補償するための装置及び方法 Download PDF

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Publication number
JP6049043B2
JP6049043B2 JP2015502109A JP2015502109A JP6049043B2 JP 6049043 B2 JP6049043 B2 JP 6049043B2 JP 2015502109 A JP2015502109 A JP 2015502109A JP 2015502109 A JP2015502109 A JP 2015502109A JP 6049043 B2 JP6049043 B2 JP 6049043B2
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Japan
Prior art keywords
illumination system
optical element
channel
partial beam
polarization
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Expired - Fee Related
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JP2015502109A
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Japanese (ja)
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JP2015513223A (ja
JP2015513223A5 (enExample
Inventor
インゴ ゼンガー
インゴ ゼンガー
フランク シュレゼナー
フランク シュレゼナー
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
JP2015502109A 2012-03-29 2012-03-29 マイクロリソグラフィ投影露光系のチャネルの欠陥を補償するための装置及び方法 Expired - Fee Related JP6049043B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/055621 WO2013143594A1 (en) 2012-03-29 2012-03-29 Apparatus and method for compensating a defect of a channel of a microlithographic projection exposure system

Publications (3)

Publication Number Publication Date
JP2015513223A JP2015513223A (ja) 2015-04-30
JP2015513223A5 JP2015513223A5 (enExample) 2016-02-25
JP6049043B2 true JP6049043B2 (ja) 2016-12-21

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JP2015502109A Expired - Fee Related JP6049043B2 (ja) 2012-03-29 2012-03-29 マイクロリソグラフィ投影露光系のチャネルの欠陥を補償するための装置及び方法

Country Status (6)

Country Link
US (1) US9632413B2 (enExample)
JP (1) JP6049043B2 (enExample)
KR (1) KR101968796B1 (enExample)
CN (1) CN104220931B (enExample)
TW (1) TWI603157B (enExample)
WO (1) WO2013143594A1 (enExample)

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DE102012205045A1 (de) 2012-03-29 2013-10-02 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206287A1 (de) 2012-04-17 2013-10-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102013201133A1 (de) 2013-01-24 2014-07-24 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
CN106933060B (zh) * 2015-12-30 2018-10-16 上海微电子装备（集团）股份有限公司 一种棱镜旋转调节机构和光刻机曝光系统及光刻机
JP2021531502A (ja) * 2018-07-17 2021-11-18 カール ツァイス エスエムエス リミテッド フォトリソグラフィマスクの基板に導入される１つまたは複数のピクセルの効果を決定するための方法および装置
DE102019201497B3 (de) * 2019-02-06 2020-06-18 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung
FR3098710B1 (fr) * 2019-07-19 2021-12-31 Keranova Appareil de decoupe a coupleur optique incluant un correcteur de polarisation
US11366382B2 (en) * 2020-02-24 2022-06-21 Carl Zeiss Smt Gmbh Method and apparatus for performing an aerial image simulation of a photolithographic mask

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JP2000331927A (ja) * 1999-03-12 2000-11-30 Canon Inc 投影光学系及びそれを用いた投影露光装置
US20050094268A1 (en) * 2002-03-14 2005-05-05 Carl Zeiss Smt Ag Optical system with birefringent optical elements
US20040108167A1 (en) 2002-12-05 2004-06-10 Elliott Christopher M. Variable resistance control of a gear train oil pump
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JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
EP1668420B1 (en) 2003-09-26 2008-05-21 Carl Zeiss SMT AG Exposure method as well as projection exposure system for carrying out the method
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
CN101078812B (zh) * 2004-02-06 2013-11-27 株式会社尼康 偏光变换元件、光学照明装置、曝光装置以及曝光方法
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JP2006173305A (ja) * 2004-12-15 2006-06-29 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
US7345740B2 (en) * 2004-12-28 2008-03-18 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
TWI423301B (zh) 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
WO2007096250A1 (de) * 2006-02-21 2007-08-30 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen projektionsbelichtungsanlage
DE102006032810A1 (de) 2006-07-14 2008-01-17 Carl Zeiss Smt Ag Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, mikrolithografie-Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithografisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
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Also Published As

Publication number Publication date
JP2015513223A (ja) 2015-04-30
CN104220931B (zh) 2016-10-12
TWI603157B (zh) 2017-10-21
TW201344377A (zh) 2013-11-01
KR101968796B1 (ko) 2019-04-12
US20150017589A1 (en) 2015-01-15
CN104220931A (zh) 2014-12-17
WO2013143594A1 (en) 2013-10-03
KR20140138828A (ko) 2014-12-04
US9632413B2 (en) 2017-04-25

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