CN104220931B - 补偿微光刻投射曝光系统的通道缺陷的设备及方法 - Google Patents

补偿微光刻投射曝光系统的通道缺陷的设备及方法 Download PDF

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Publication number
CN104220931B
CN104220931B CN201280071975.2A CN201280071975A CN104220931B CN 104220931 B CN104220931 B CN 104220931B CN 201280071975 A CN201280071975 A CN 201280071975A CN 104220931 B CN104220931 B CN 104220931B
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China
Prior art keywords
optical element
illuminators
polarization
illuminator
optics
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CN201280071975.2A
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English (en)
Chinese (zh)
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CN104220931A (zh
Inventor
I.萨恩杰
F.施莱塞纳
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
CN201280071975.2A 2012-03-29 2012-03-29 补偿微光刻投射曝光系统的通道缺陷的设备及方法 Active CN104220931B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/055621 WO2013143594A1 (en) 2012-03-29 2012-03-29 Apparatus and method for compensating a defect of a channel of a microlithographic projection exposure system

Publications (2)

Publication Number Publication Date
CN104220931A CN104220931A (zh) 2014-12-17
CN104220931B true CN104220931B (zh) 2016-10-12

Family

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CN201280071975.2A Active CN104220931B (zh) 2012-03-29 2012-03-29 补偿微光刻投射曝光系统的通道缺陷的设备及方法

Country Status (6)

Country Link
US (1) US9632413B2 (enExample)
JP (1) JP6049043B2 (enExample)
KR (1) KR101968796B1 (enExample)
CN (1) CN104220931B (enExample)
TW (1) TWI603157B (enExample)
WO (1) WO2013143594A1 (enExample)

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DE102012205045A1 (de) 2012-03-29 2013-10-02 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206287A1 (de) * 2012-04-17 2013-10-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102013201133A1 (de) 2013-01-24 2014-07-24 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
CN106933060B (zh) * 2015-12-30 2018-10-16 上海微电子装备（集团）股份有限公司 一种棱镜旋转调节机构和光刻机曝光系统及光刻机
WO2020016626A1 (en) 2018-07-17 2020-01-23 Carl Zeiss Sms Ltd. Method and apparatus for determining an effect of one or more pixels to be introduced into a substrate of a photolithographic mask
DE102019201497B3 (de) * 2019-02-06 2020-06-18 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung
FR3098710B1 (fr) * 2019-07-19 2021-12-31 Keranova Appareil de decoupe a coupleur optique incluant un correcteur de polarisation
US11366382B2 (en) * 2020-02-24 2022-06-21 Carl Zeiss Smt Gmbh Method and apparatus for performing an aerial image simulation of a photolithographic mask

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WO2009152867A1 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus and microlithographic exposure method
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CN101946212A (zh) * 2007-12-21 2011-01-12 卡尔蔡司Smt股份公司 微光刻投射曝光设备
CN102200693A (zh) * 2010-03-22 2011-09-28 Asml荷兰有限公司 照射系统和光刻设备

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JP5026788B2 (ja) * 2003-07-30 2012-09-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィの照明システム
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ATE396428T1 (de) 2003-09-26 2008-06-15 Zeiss Carl Smt Ag Belichtungsverfahren sowie projektions- belichtungssystem zur ausführung des verfahrens
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TWI453796B (zh) 2005-01-21 2014-09-21 尼康股份有限公司 偏光變更單元以及元件製造方法
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CN1914525A (zh) * 2004-02-06 2007-02-14 株式会社尼康 偏光变换元件、光学照明装置、曝光装置以及曝光方法
CN101589343A (zh) * 2007-01-23 2009-11-25 卡尔蔡司Smt股份公司 辐照强度分布的测量设备以及测量方法
CN101802715A (zh) * 2007-09-14 2010-08-11 卡尔蔡司Smt股份公司 微光刻投射曝光设备的照明系统
CN101946212A (zh) * 2007-12-21 2011-01-12 卡尔蔡司Smt股份公司 微光刻投射曝光设备
WO2009152867A1 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus and microlithographic exposure method
CN102200693A (zh) * 2010-03-22 2011-09-28 Asml荷兰有限公司 照射系统和光刻设备

Also Published As

Publication number Publication date
TW201344377A (zh) 2013-11-01
JP6049043B2 (ja) 2016-12-21
US9632413B2 (en) 2017-04-25
WO2013143594A1 (en) 2013-10-03
JP2015513223A (ja) 2015-04-30
CN104220931A (zh) 2014-12-17
KR20140138828A (ko) 2014-12-04
KR101968796B1 (ko) 2019-04-12
US20150017589A1 (en) 2015-01-15
TWI603157B (zh) 2017-10-21

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