JP6046658B2 - 太陽電池 - Google Patents
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- JP6046658B2 JP6046658B2 JP2014099796A JP2014099796A JP6046658B2 JP 6046658 B2 JP6046658 B2 JP 6046658B2 JP 2014099796 A JP2014099796 A JP 2014099796A JP 2014099796 A JP2014099796 A JP 2014099796A JP 6046658 B2 JP6046658 B2 JP 6046658B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (14)
- 光電変換部と、
前記光電変換部に接続される第1電極及び第2電極とを含み、
前記第1電極は、複数のフィンガー電極部を含むフィンガー電極と、前記複数のフィンガー電極部と交差する方向に形成されるメイン部分及び前記メイン部分から突出する突出部分を少なくとも一つ含むバスバー電極とを含み、
前記突出部分は、前記複数のフィンガー電極部のうち少なくとも2つ以上にわたって形成され、
前記フィンガー電極と平行な方向への前記突出部分の突出長さは、前記メイン部分の幅よりも小さく、
前記突出部分は、前記メイン部分の両方の端部にそれぞれ位置する複数の端部突出部と前記メイン部分の内部領域から突出する中央突出部を含み、
前記複数の端部突出部と前記中央突出部のそれぞれは、前記メイン部分の両側に対称に配置し、
前記フィンガー電極と平行な方向への前記中央突出部の突出長さは、前記フィンガー電極と平行な方向の端部突出部のそれぞれの突出長さよりも短く、
前記フィンガー電極は、前記突出部分の外郭に対応する位置で前記フィンガー電極部と交差する方向に形成されるアライメントマーク部をさらに含む、太陽電池。 - 前記突出部分の前記突出長さが0.1mm〜0.7mmである、請求項1に記載の太陽電池。
- 前記メイン部分の長さ方向と平行な方向への前記突出部分の幅が2mm〜10mmである、請求項1に記載の太陽電池。
- 前記突出部分が、前記複数のフィンガー電極部のうち2個〜10個のフィンガー電極にわたって形成される、請求項1に記載の太陽電池。
- 前記フィンガー電極と平行な方向において前記突出部分を備えた前記バスバー電極の幅が、2.1mm〜3.4mmである、請求項1に記載の太陽電池。
- 前記第1電極に接続されるリボンをさらに含み、
前記リボンは、前記バスバー電極上に位置する一側端部と、隣接する太陽電池に延びる他側部分を有し、
前記端部突出部は、前記バスバー電極に位置する前記リボンの端部と隣接する第1端部突出部と、前記第1端部突出部と反対の位置に位置する第2端部突出部とを含み、
前記第1端部突出部の幅が、前記第2端部突出部の幅と同一またはより広い、請求項1に記載の太陽電池。 - 前記中央突出部と前記端部突出部が均一な間隔で規則的に配置される、請求項1に記載の太陽電池。
- 前記第1電極に接続されるリボンをさらに含み、
前記フィンガー電極と平行な方向において前記突出部分を備えた前記バスバー電極の幅が、前記リボンの幅よりも広い、請求項1に記載の太陽電池。 - 前記リボンの幅と前記バスバー電極の前記メイン部分の幅の比率が、1:0.80〜1:1.22である、請求項8に記載の太陽電池。
- 前記光電変換部は、半導体基板及びエミッタ領域を含み、
前記光電変換部は、前記エミッタ領域上に形成される絶縁膜をさらに含み、
前記フィンガー電極は、前記絶縁膜を貫通して前記エミッタ領域に接触して形成され、
前記バスバー電極は、前記絶縁膜上に形成される、請求項1に記載の太陽電池。 - 前記フィンガー電極は、前記光電変換部上に位置する第1層と、前記第1層上に位置する第2層とを含む二層構造を有し、
前記バスバー電極は、前記第2層と同一の物質及び厚さを有する単一層である、請求項1に記載の太陽電池。 - 前記第1層と前記第2層とが互いに異なる物質で形成される、請求項11に記載の太陽電池。
- 前記第2電極に接続されるリボンをさらに含み、
前記第2電極の幅は、前記リボンよりの幅より広い、請求項1に記載の太陽電池。 - 光電変換部と、
前記光電変換部に接続される第1電極及び第2電極とを含み、
前記第1電極は、複数のフィンガー電極部を含むフィンガー電極と、前記複数のフィンガー電極部と交差する方向に形成されるメイン部分及び前記メイン部分から突出する突出部分を少なくとも一つ含むバスバー電極とを含み、
前記フィンガー電極と平行な方向において前記突出部分を備えた前記バスバー電極の幅は、2.1mm〜3.4mmであり、
前記フィンガー電極と平行な方向への前記突出部分の突出長さは、前記メイン部分の幅よりも小さく、
前記突出部分は、前記メイン部分の両方の端部にそれぞれ位置する複数の端部突出部と前記メイン部分の内部領域から突出する中央突出部を含み、
前記複数の端部突出部と前記中央突出部のそれぞれは、前記メイン部分の両側に対称に配置し、
前記フィンガー電極と平行な方向への前記中央突出部の突出長さは、前記フィンガー電極と平行な方向の端部突出部のそれぞれの突出長さよりも短く、
前記フィンガー電極は、前記突出部分の外郭に対応する位置で前記フィンガー電極部と交差する方向に形成されるアライメントマーク部をさらに含む、太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2013-0115451 | 2013-09-27 | ||
KR1020130115451A KR102053138B1 (ko) | 2013-09-27 | 2013-09-27 | 태양 전지 |
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JP2015070260A JP2015070260A (ja) | 2015-04-13 |
JP6046658B2 true JP6046658B2 (ja) | 2016-12-21 |
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US (1) | US11139406B2 (ja) |
EP (1) | EP2854181B1 (ja) |
JP (1) | JP6046658B2 (ja) |
KR (1) | KR102053138B1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5874011B2 (ja) * | 2011-01-28 | 2016-03-01 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池モジュール |
KR20160038694A (ko) * | 2014-09-30 | 2016-04-07 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
WO2016111339A1 (ja) * | 2015-01-07 | 2016-07-14 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
KR101772542B1 (ko) * | 2015-04-30 | 2017-08-29 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
US11532765B2 (en) | 2015-04-30 | 2022-12-20 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
KR101739404B1 (ko) | 2015-08-07 | 2017-06-08 | 엘지전자 주식회사 | 태양 전지 패널 |
JP2017120873A (ja) * | 2015-12-25 | 2017-07-06 | 京セラ株式会社 | 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法 |
WO2017119036A1 (ja) * | 2016-01-05 | 2017-07-13 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
WO2017204422A1 (ko) * | 2016-05-25 | 2017-11-30 | 알무스인터내셔널 주식회사 | 태양전지 및 이의 제조방법 |
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KR20150035190A (ko) | 2015-04-06 |
US11139406B2 (en) | 2021-10-05 |
JP2015070260A (ja) | 2015-04-13 |
KR102053138B1 (ko) | 2019-12-06 |
US20150090334A1 (en) | 2015-04-02 |
EP2854181A1 (en) | 2015-04-01 |
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