JP2015070260A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2015070260A JP2015070260A JP2014099796A JP2014099796A JP2015070260A JP 2015070260 A JP2015070260 A JP 2015070260A JP 2014099796 A JP2014099796 A JP 2014099796A JP 2014099796 A JP2014099796 A JP 2014099796A JP 2015070260 A JP2015070260 A JP 2015070260A
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- 239000010410 layer Substances 0.000 claims description 49
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- 239000011347 resin Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000003100 immobilizing effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 230000035939 shock Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (20)
- 光電変換部と、
前記光電変換部に接続される第1電極及び第2電極とを含み、
前記第1電極は、複数のフィンガー電極部を含むフィンガー電極と、前記複数のフィンガー電極部と交差する方向に形成されるメイン部分及び前記メイン部分から突出する突出部分を少なくとも一つ含むバスバー電極とを含み、
前記突出部分が、前記複数のフィンガー電極部のうち少なくとも2つ以上にわたって形成される、太陽電池。 - 前記メイン部分の幅よりも前記突出部分の突出長さがさらに小さい、請求項1に記載の太陽電池。
- 前記突出部分の突出長さが0.1mm〜0.7mmである、請求項1に記載の太陽電池。
- 前記突出部分の幅が2mm〜10mmである、請求項1に記載の太陽電池。
- 前記突出部分が、複数のフィンガー電極部のうち2個〜10個にわたって形成される、請求項1に記載の太陽電池。
- 前記突出部分が位置した部分において前記バスバー電極の幅が、2.1mm〜3.4mmである、請求項1に記載の太陽電池。
- 前記突出部分が、前記メイン部分の端部に位置する端部突出部を含む、請求項1に記載の太陽電池。
- 前記端部突出部は、前記メイン部分を基準として両側に対称に位置する、請求項7に記載の太陽電池。
- 前記第1電極に接続されるリボンをさらに含み、
前記リボンは、一側端部が前記バスバー電極上に位置するようになり、他側部分は隣接する太陽電池に延び、
前記端部突出部は、前記一側端部と隣接する第1端部突出部と、前記第1端部突出部と反対の位置に位置する第2端部突出部とを含み、
前記第1端部突出部の幅が、前記第2端部突出部の幅と同一またはこれより長い、請求項7に記載の太陽電池。 - 前記突出部分が、前記メイン部分の内部領域から突出する中央突出部をさらに含む、請求項7に記載の太陽電池。
- 前記中央突出部の突出長さが、前記端部突出部の突出長さよりも小さい、請求項10に記載の太陽電池。
- 前記中央突出部と前記端部突出部が均一な間隔を置いて規則的に配置される、請求項7に記載の太陽電池。
- 前記第1電極に接続されるリボンをさらに含み、
前記突出部分が位置した部分において前記バスバー電極の幅が、前記リボンの幅よりも大きい、請求項1に記載の太陽電池。 - 前記リボンの幅:前記メイン部分が位置した部分において前記バスバー電極の幅の比率が、1:0.80〜1:1.22である、請求項13に記載の太陽電池。
- 前記フィンガー電極は、前記突出部分の外郭に対応する位置で前記フィンガー電極部と交差する方向に形成されるアライメントマーク部をさらに含む、請求項1に記載の太陽電池。
- 前記光電変換部は、半導体基板及びエミッタ領域を含み、
前記エミッタ領域上に形成される絶縁膜をさらに含み、
前記フィンガー電極は、前記絶縁膜を貫通して前記エミッタ領域に接触して形成され、
前記バスバー電極は、前記絶縁膜上に形成される、請求項1に記載の太陽電池。 - 前記フィンガー電極は、前記光電変換部上に位置する第1層と、前記第1層上に位置する第2層とを含む二層構造を有し、
前記バスバー電極は、前記第2層と同一の物質及び厚さを有する単一層構造を有する、請求項1に記載の太陽電池。 - 前記第1層と前記第2層とが互いに異なる物質を有する、請求項17に記載の太陽電池。
- 前記第2電極に接続されるリボンをさらに含み、
前記第2電極は、全体的に前記リボンよりも大きい幅を有する、請求項1に記載の太陽電池。 - 光電変換部と、
前記光電変換部に接続される第1電極及び第2電極とを含み、
前記第1電極は、複数のフィンガー電極部を含むフィンガー電極と、前記複数のフィンガー電極と交差する方向に形成されるメイン部分及び前記メイン部分から突出する突出部分を少なくとも一つ含むバスバー電極とを含み、
前記突出部分が位置した部分において前記バスバー電極の幅が、2.1mm〜3.4mmである、太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020130115451A KR102053138B1 (ko) | 2013-09-27 | 2013-09-27 | 태양 전지 |
KR10-2013-0115451 | 2013-09-27 |
Publications (2)
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JP2015070260A true JP2015070260A (ja) | 2015-04-13 |
JP6046658B2 JP6046658B2 (ja) | 2016-12-21 |
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US (1) | US11139406B2 (ja) |
EP (1) | EP2854181B1 (ja) |
JP (1) | JP6046658B2 (ja) |
KR (1) | KR102053138B1 (ja) |
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JP2016213460A (ja) * | 2015-04-30 | 2016-12-15 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
JP2018056563A (ja) * | 2016-09-27 | 2018-04-05 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
JPWO2017119036A1 (ja) * | 2016-01-05 | 2018-10-04 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
JP2020047925A (ja) * | 2018-09-18 | 2020-03-26 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
US11532765B2 (en) | 2015-04-30 | 2022-12-20 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
WO2024048332A1 (ja) * | 2022-09-02 | 2024-03-07 | 京セラ株式会社 | 太陽電池素子、および太陽電池モジュール |
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JP5874011B2 (ja) * | 2011-01-28 | 2016-03-01 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池モジュール |
KR20160038694A (ko) * | 2014-09-30 | 2016-04-07 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
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EP2854181B1 (en) | 2018-01-10 |
EP2854181A1 (en) | 2015-04-01 |
KR20150035190A (ko) | 2015-04-06 |
KR102053138B1 (ko) | 2019-12-06 |
US11139406B2 (en) | 2021-10-05 |
US20150090334A1 (en) | 2015-04-02 |
JP6046658B2 (ja) | 2016-12-21 |
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