JP2016213460A - 太陽電池及びこれを含む太陽電池パネル - Google Patents
太陽電池及びこれを含む太陽電池パネル Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 130
- 239000000463 material Substances 0.000 claims description 115
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 31
- 230000001070 adhesive effect Effects 0.000 description 29
- 239000000853 adhesive Substances 0.000 description 28
- 239000013078 crystal Substances 0.000 description 23
- 239000011247 coating layer Substances 0.000 description 20
- 239000002019 doping agent Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 239000012792 core layer Substances 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000003566 sealing material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910008433 SnCU Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
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Abstract
Description
縁ライン42cの幅はフィンガーライン42aの幅と類似又は同一であってもよい。フィンガーライン42aの幅、厚さ、他の電極部分及び配線材142との関係などは、縁ライン42cにもそのまま適用することができる。縁ライン42cは、例えば、フィンガーライン42aの一部を構成してもよい。
また、一端エッジ領域PA3に位置した電極部424aと他端エッジ領域PA4に位置した電極部424bの形状を別個にし、配線材142の連結構造を安定的に形成しながらも電極構造を単純化することができる。
Claims (20)
- 半導体基板、前記半導体基板に又は前記半導体基板上に設けられた導電型領域、及び前記導電型領域に連結された電極を有する太陽電池と、
前記太陽電池を他の太陽電池と連結したり又は外部回路に連結するように前記電極に電気的に連結された配線材と、
を備え、
前記電極が、第1方向に並んで設けられ、前記半導体基板の縁に隣接する最外郭フィンガーラインを含む複数のフィンガーラインと、前記第1方向と交差する第2方向に設けられ、前記配線材に電気的に連結されたバスバーラインと、を有し、
前記半導体基板の一側縁に隣接する前記バスバーラインの一端部に一端エッジ領域が配置され、前記半導体基板の他側縁に隣接する前記バスバーラインの他端部に他端エッジ領域が配置され、
前記一端エッジ領域及び前記他端エッジ領域のそれぞれにおいて前記バスバーラインは、内部に開口部を有するとともに、最外側端部が前記最外郭フィンガーラインと同一線上又はこれよりも外側に配置される電極部を有する、太陽電池パネル。 - 前記一端エッジ領域及び前記他端エッジ領域のそれぞれにおいて前記バスバーラインと前記配線材との結合力が、前記一端エッジ領域及び前記他端エッジ領域以外の領域における前記バスバーラインと前記配線材との結合力よりも小さい、請求項1に記載の太陽電池パネル。
- 前記一端エッジ領域に配置された前記電極部が、前記一端エッジ領域に隣接した前記2つの電極領域の部分に配置された前記フィンガーラインに連結され、
前記他端エッジ領域に配置された前記電極部が、前記他端エッジ領域に隣接した前記2つの電極領域の部分に配置された前記フィンガーラインに連結される、請求項1に記載の太陽電池パネル。 - 前記一端エッジ領域内に前記配線材の端部が配置され、
前記配線材が前記他端エッジ領域を通って前記他の太陽電池又は前記外部回路に延長され、
前記一端エッジ領域に配置された前記電極部と前記他端エッジ領域に配置された前記電極部とが別個の形状を有する、請求項1に記載の太陽電池パネル。 - 前記一端エッジ領域に配置された前記電極部が、前記最外郭フィンガーラインよりも内側に位置する第1電極部と、前記第1電極部から前記第1電極部と交差する方向に沿って前記最外郭フィンガーラインと同一線上又はこれよりも外側まで延長される第2電極部と、を有し、
前記他端エッジ領域で前記電極部が、前記最外郭フィンガーラインと同一線上又はこれよりも外側に位置する第3電極部を有し、
前記配線材が前記一端エッジ領域で前記第1電極部及び前記第2電極部に位置し、
前記配線材が前記他端エッジ領域で前記第3電極部に位置する、請求項4に記載の太陽電池パネル。 - 前記第1電極部及び前記第3電極部が前記フィンガーラインと平行であり、
前記第2電極部が前記フィンガーラインと直交し、
前記第2電極部が前記第1電極部の中央を通るように位置し、
前記配線材が前記第1電極部を横切って位置し、前記配線材の端部が前記第2電極部上に位置し、
前記配線材が前記第3電極部を横切る、請求項5に記載の太陽電池パネル。 - 前記一端エッジ領域内に前記配線材の端部が位置し、
前記配線材が前記他端エッジ領域を通って前記他の太陽電池又は前記外部回路に延長され、
前記一端エッジ領域に配置された前記電極部と前記他端エッジ領域に配置された前記電極部が互いに対称の形状を有する、請求項1に記載の太陽電池パネル。 - 前記バスバーラインが、前記配線材の長さ方向に沿って長く延びるライン部と、前記ライン部よりも広い幅を有するパッド部と、を有し、
前記一端エッジ領域及び前記他端エッジ領域はそれぞれ、前記最外郭フィンガーラインよりも内側に位置する内側端部を有し、
前記内側端部に前記パッド部が位置する、請求項1に記載の太陽電池パネル。 - 前記パッド部の幅が、前記配線材の幅と等しいか又は大きく、
前記パッド部の幅が、前記フィンガーライン及び前記電極部の幅よりも大きい、請求項8に記載の太陽電池パネル。 - 前記配線材は、前記内側端部に位置する前記パッド部よりも外側に位置する前記一端エッジ領域又は前記他端エッジ領域まで延長される、請求項8に記載の太陽電池パネル。
- 前記一端エッジ領域に配置された前記配線材の長さと前記他端エッジ領域に配置された前記配線材の長さが互いに異なる、請求項1に記載の太陽電池パネル。
- 前記一端エッジ領域及び前記他端エッジ領域はそれぞれ、前記最外郭フィンガーラインよりも内側に位置する内側端部を有し、
前記配線材の幅をW、前記一端又は他端エッジ領域の前記内側端部と前記半導体基板の縁との間のエッジ距離をDとするとき、前記W及び前記Dが次の式を満たす、請求項1に記載の太陽電池パネル。
13.732・ln(W)−71.436−0.0000321462・(W)2≦D≦13.732・ln(W)−71.436+0.0000321462・(W)2 (ここで、Wの単位はμmであり、Dの単位はmmである。) - 前記配線材の幅が250μm乃至500μmであり、
前記エッジ距離が2.37mm乃至21.94mmであり、
前記太陽電池の一面を基準に、前記配線材の個数が6個乃至33個である、請求項12に記載の太陽電池パネル。 - 前記電極部の幅は、前記フィンガーラインの幅と等しいか又は大きく、前記フィンガーラインのピッチよりも小さく、
前記配線材の幅が前記電極部の幅よりも大きく、
前記最外郭フィンガーラインの間において前記一端又は他端エッジ領域の幅が前記配線材の幅よりも大きい、請求項1に記載の太陽電池パネル。 - 前記一端又は他端エッジ領域は、前記半導体基板の縁に近づくほど幅が次第に増加する形状を有する、請求項1に記載の太陽電池パネル。
- 前記一端エッジ領域と前記電極領域との間、又は前記他端エッジ領域と前記電極領域との間にそれらを区画する縁部をさらに有し、
前記縁部に前記フィンガーラインが複数個連結され、
前記一端エッジ領域又は前記他端エッジ領域の電極部が前記縁部を介して前記フィンガー電極に連結される、請求項1に記載の太陽電池パネル。 - 半導体基板と、
前記半導体基板に又は前記半導体基板上に設けられた導電型領域と、
前記導電型領域に連結された電極と、
を備え、
前記電極が、第1方向に並んで設けられ、前記半導体基板の縁に隣接する最外郭フィンガーラインを含む複数のフィンガーラインと、前記第1方向と交差する第2方向に設けられ、前記配線材に電気的に連結されるバスバーラインと、を有し、
前記半導体基板の一側縁に隣接する前記バスバーラインの一端部に一端エッジ領域が配置され、前記半導体基板の他側縁に隣接する前記バスバーラインの他端部に他端エッジ領域が配置され、
前記一端エッジ領域及び前記他端エッジ領域のそれぞれにおいて前記バスバーラインは、内部に開口部を有するとともに、最外側端部が前記最外郭フィンガーラインと同一線上又はこれよりも外側に位置する電極部を有する、太陽電池。 - 前記一端エッジ領域に配置された前記電極部が、前記一端エッジ領域に隣接した前記2つの電極領域の部分に配置された前記フィンガーラインに連結され、
前記他端エッジ領域に配置された前記電極部が、前記他端エッジ領域に隣接した前記2つの電極領域の部分に配置された前記フィンガーラインに連結される、請求項17に記載の太陽電池。 - 前記一端エッジ領域に配置された前記電極部と前記他端エッジ領域に配置された前記電極部とが別個の形状を有するか、又は互いに対称の形状を有する、請求項17に記載の太陽電池。
- 前記一端エッジ領域に配置された前記電極部が、前記最外郭フィンガーラインよりも内側に位置する第1電極部と、前記第1電極部から前記第1電極部と交差する方向に沿って前記最外郭フィンガーラインと同一線上又はこれよりも外側まで延長される第2電極部と、を有し、
前記他端エッジ領域で前記電極部が、前記最外郭フィンガーラインと同一線上又はこれよりも外側に位置する第3電極部を有する、請求項19に記載の太陽電池。
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